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    B641 Search Results

    B641 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    AT45DB641E-MHN2B-T Renesas Electronics Corporation 64Mbit, 1.7 V to 3.6 V Range SPI Serial Flash Memory Visit Renesas Electronics Corporation
    AT45DB641E-UUN-T Renesas Electronics Corporation 64Mbit, 1.7 V to 3.6 V Range SPI Serial Flash Memory Visit Renesas Electronics Corporation
    AT45DB641E-SHN-B Renesas Electronics Corporation 64Mbit, 1.7 V to 3.6 V Range SPI Serial Flash Memory Visit Renesas Electronics Corporation
    AT45DB641E-SHN-T Renesas Electronics Corporation 64Mbit, 1.7 V to 3.6 V Range SPI Serial Flash Memory Visit Renesas Electronics Corporation
    AT45DB641E-MWHN-T Renesas Electronics Corporation 64Mbit, 1.7 V to 3.6 V Range SPI Serial Flash Memory Visit Renesas Electronics Corporation
    AT45DB641E-MWHN-Y Renesas Electronics Corporation 64Mbit, 1.7 V to 3.6 V Range SPI Serial Flash Memory Visit Renesas Electronics Corporation

    B641 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    B641-2 Crydom Thyristor: SCR: 0.6KA S Original PDF
    B641-2T Crydom Thyristor: SCR: 0.6KA S Original PDF
    B641SE-2T Crydom 42.5 Amp SCR/DIODE Module Original PDF
    B641SE-2T Crydom Thyristor: SCR: 0.6KA S Original PDF
    SF Impression Pixel

    B641 Price and Stock

    Renesas Electronics Corporation AT45DB641E-MWHN-T

    IC FLASH 64MBIT SPI 85MHZ 8VDFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AT45DB641E-MWHN-T Reel 8,000 2,000
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    • 100 -
    • 1000 -
    • 10000 $4.05493
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    Mouser Electronics AT45DB641E-MWHN-T 2,061
    • 1 $5.82
    • 10 $5.21
    • 100 $4.64
    • 1000 $4.16
    • 10000 $4
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    TME AT45DB641E-MWHN-T 1
    • 1 $3.9
    • 10 $3.65
    • 100 $3.34
    • 1000 $3.34
    • 10000 $3.34
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    Avnet Asia AT45DB641E-MWHN-T 2,000 18 Weeks 2,000
    • 1 -
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    • 10000 $3.55696
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    Renesas Electronics America AT45DB641E-MWHN-T Tape & Reel (TR) 9,335 1
    • 1 $5.87
    • 10 $5.362
    • 100 $4.6848
    • 1000 $4.1897
    • 10000 $4.05493
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    Renesas Electronics Corporation AT45DB641E-MWHN2B-T

    IC FLASH 64MBIT SPI 85MHZ 8VDFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AT45DB641E-MWHN2B-T Reel 8,000 2,000
    • 1 -
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    • 10000 $4.04577
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    AT45DB641E-MWHN2B-T Cut Tape 872 1
    • 1 $5.86
    • 10 $5.35
    • 100 $4.6743
    • 1000 $4.18024
    • 10000 $4.18024
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    Avnet Americas AT45DB641E-MWHN2B-T Reel 18 Weeks 2,000
    • 1 -
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    • 10000 $3.9059
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    Mouser Electronics AT45DB641E-MWHN2B-T 2,801
    • 1 $5.68
    • 10 $5.02
    • 100 $4.53
    • 1000 $4.01
    • 10000 $3.93
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    Avnet Asia AT45DB641E-MWHN2B-T 18 Weeks 2,000
    • 1 -
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    • 10000 $3.55696
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    Renesas Electronics America AT45DB641E-MWHN2B-T Tape & Reel (TR) 8,872 1
    • 1 $5.86
    • 10 $5.35
    • 100 $4.6743
    • 1000 $4.18024
    • 10000 $4.04577
    		Buy Now

    Renesas Electronics Corporation AT45DB641E-SHN-B

    IC FLASH 64MBIT SPI 85MHZ 8SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AT45DB641E-SHN-B Tube 2,529 1
    • 1 $5.3
    • 10 $4.836
    • 100 $4.22511
    • 1000 $3.94506
    • 10000 $3.77857
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    Mouser Electronics AT45DB641E-SHN-B 6,694
    • 1 $5.27
    • 10 $4.37
    • 100 $4.18
    • 1000 $3.9
    • 10000 $3.74
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    TME AT45DB641E-SHN-B 5,419 1
    • 1 $5.85
    • 10 $5.72
    • 100 $5.01
    • 1000 $4.76
    • 10000 $4.76
    		Buy Now
    Avnet Asia AT45DB641E-SHN-B 18 Weeks 540
    • 1 -
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    • 100 -
    • 1000 $3.34211
    • 10000 $3.1358
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    Renesas Electronics America AT45DB641E-SHN-B Tube 2,529 1
    • 1 $5.3
    • 10 $4.836
    • 100 $4.22511
    • 1000 $3.94506
    • 10000 $3.77857
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    NXP Semiconductors SC16C654BIB64,151

    IC UART QUAD W/FIFO 64-LQFP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SC16C654BIB64,151 Tray 1,183 1
    • 1 $13.99
    • 10 $12.86
    • 100 $12.3264
    • 1000 $8.86175
    • 10000 $8.86175
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    Mouser Electronics SC16C654BIB64,151 1,410
    • 1 $13.97
    • 10 $12.82
    • 100 $10.64
    • 1000 $8.86
    • 10000 $8.86
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    Flip Electronics SC16C654BIB64,151 118
    • 1 -
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    • 1000 -
    • 10000 -
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    onsemi NTB6413ANT4G

    MOSFET N-CH 100V 42A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NTB6413ANT4G Cut Tape 549 1
    • 1 $2.12
    • 10 $1.765
    • 100 $1.4046
    • 1000 $1.4046
    • 10000 $1.4046
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    Mouser Electronics NTB6413ANT4G 2,032
    • 1 $1.81
    • 10 $1.72
    • 100 $1.41
    • 1000 $1.03
    • 10000 $0.922
    		Buy Now
    Avnet Asia NTB6413ANT4G 42 Weeks 800
    • 1 -
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    • 100 -
    • 1000 $0.93842
    • 10000 $0.88049
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    Find more B641 price and stock on Findchips.com

    B641 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    P-TFBGA63-0911-0

    Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112
    Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		PDF TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 P-TFBGA63-0911-0 BA102 PTFBGA-63 diode ba102 BA119 B641 BA95 BA112

    diode ba102

    Abstract: BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641
    Text: TC58FVT641/B641FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		PDF TC58FVT641/B641FT-10 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 diode ba102 BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641

    BA102

    Abstract: BA127 Diode diode ba102 BA114
    Text: TC58FVT641/B641FT/XB-70,-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		PDF TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 BA102 BA127 Diode diode ba102 BA114

    Untitled

    Abstract: No abstract text available
    Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory


    Original     		PDF TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit,

    144MB

    Abstract: B641 High Connection Density
    Text: 64MB SO-RIMMTM Module with 128/144 Mb RDRAMs Direct Rambus SO-RIMM™ Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s Direct Rambus SO-RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and


    Original     		PDF 128Mb 144Mb HS064N04E HS064N04D HS064N04C HS064N04B HS064E04E HS064E04D HS064E04C HS064E04B 144MB B641 High Connection Density

    b774 transistor

    Abstract: c772 CNN30M12 Jianghai k100 A642 A772 capacitor jianghai cd 138 K100-ISO-77 A643
    Text: CD 138 PC Series 10 000 h at 85°C CD 136 PK longer life CD 139 BL 105°C CD 135 BP 105°C longer life highest voltage CD 138 PC CD 137 PX Item Characteristics Operating Temperature Range °C -40 ~ +85 Voltage Range (V) 350 ~ 450 Capacitance Range (µF)


    Original     		PDF 120Hz) M6x12 M5x10 M8x16 CNN30M12 K100-ISO-50 K100-ISO-77 v2006 b774 transistor c772 CNN30M12 Jianghai k100 A642 A772 capacitor jianghai cd 138 K100-ISO-77 A643

    B688

    Abstract: B628 b649 transistor b688 b688 transistor b673 b673 power transistor b673 transistor b643 R B667
    Text: M AN646 Interfacing Motorola 68HC11 to Microchip SPI Serial EEPROMS communication. Serial EEPROM devices are available in a variety of densities, operational voltage ranges, and packaging options. Shannon Poulin Microchip Technology Inc. Microchip realizes that its customer base is very broad,


    Original     		PDF AN646 68HC11 68HC11. B688 B628 b649 transistor b688 b688 transistor b673 b673 power transistor b673 transistor b643 R B667

    99-213UMC

    Abstract: 1A01 B643
    Text: Technical Data Sheet Side View LEDs Height 0.8mm 99-213UMC/XXXXXXX/TR8 Features z z z z z z z Side view white LED. White SMT package. Lead frame package with individual 2 pins. Wide viewing angle. Soldering methods: IR reflow soldering. Pb-free. The product itself will remain within RoHS


    Original     		PDF 99-213UMC/XXXXXXX/TR8 DSE-0000048 20-Jul 99-213UMC 1A01 B643

    transistor b688

    Abstract: b673 power transistor b649 B688 b688 transistor B667 A709 transistor transistor b643 transistor B633 b673 transistor
    Text: M AN646 Interfacing Motorola 68HC11 to Microchip SPI Serial EEPROMS communication. Serial EEPROM devices are available in a variety of densities, operational voltage ranges, and packaging options. Shannon Poulin Microchip Technology Inc. Microchip realizes that its customer base is very broad,


    Original     		PDF AN646 68HC11 68HC11. transistor b688 b673 power transistor b649 B688 b688 transistor B667 A709 transistor transistor b643 transistor B633 b673 transistor

    Untitled

    Abstract: No abstract text available
    Text: Technical Information ModSTACK 6MS2400R17KE3-3F-B16B9C23VTIO Vorläufige Daten preliminary data Key data 3x 629A rms at 690V rms, forced air fan included General information Stacks for various inverter application. Semiconductors, heat sinks, capacitors, drivers and


    Original     		PDF 6MS2400R17KE3-3F-B16B9C23VTIO 3564E26. 1231423567896AB3C736DCEF32 4112BF3567896

    b617

    Abstract: b649 b605 transistor b647 B647 b649 transistor transistor b647 bb pressure sensor circuit transistor B633 b63e
    Text: Signal Acquisition and Conditioning With Low Supply Voltages SLAA018 August 1997 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information


    Original     		PDF SLAA018 TMS7000 MC68HC11 TLV1543 b617 b649 b605 transistor b647 B647 b649 transistor transistor b647 bb pressure sensor circuit transistor B633 b63e

    B772 P M 24

    Abstract: D551 A642 CD 137 capacitor b774 transistor B772 P 38 A643 B641 A771 A361
    Text: CD 137 PX Series 10 000 h at 85°C longer life CD 136 PK CD 139 BL 105°C 105°C longer life CD 135 BP highest voltage CD 138 PC CD 137 PX Item Characteristics Operating Temperature Range °C -40 ~ +85 Voltage Range (V) 400 ~ 550 Capacitance Range (µF)


    Original     		PDF 120Hz) M6x12 M5x10 M8x16 CNN30M12 K100-ISO-50 K100-ISO-77 v2006 B772 P M 24 D551 A642 CD 137 capacitor b774 transistor B772 P 38 A643 B641 A771 A361

    B641

    Abstract: HS128E08B HS128E08C HS128E08D HS128E08E HS128N08C HS128N08D HS128N08E
    Text: 128MB SO-RIMMTM Module with 128/144 Mb RDRAMs Direct Rambus SO-RIMM™ Memory Module Specification GENERAL DESCRIPTION This document outlines specifications for HCD’s Direct Rambus SO-RIMM Module which consists of 128Mb / 144Mb Direct Rambus DRAM devices. HCD supports applications with 600, 700 and 800 MHz speed grades in both ECC and


    Original     		PDF 128MB 144Mb HS128N08E HS128N08D HS128N08C HS128N08B HS128E08E HS128E08D HS128E08C B641 HS128E08B HS128E08C HS128E08D HS128E08E HS128N08C HS128N08D HS128N08E

    b745

    Abstract: b745 diode CRC calculation mdlc VPW interface B635 B744 B744 transistor b746 MC68HC05 Applications Guide mcr 100a
    Text: Order this document by AN1224/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA AN1224 Example Software Routines for the Message Data Link Controller Module on the MC68HC705V8 By Chuck Powers Multiplex Applications INTRODUCTION The message data link controller MDLC module is a serial multiplex communication module designed to


    Original     		PDF AN1224/D AN1224 MC68HC705V8 J1850-Class b745 b745 diode CRC calculation mdlc VPW interface B635 B744 B744 transistor b746 MC68HC05 Applications Guide mcr 100a

    2SD618

    Abstract: MOTHERBOARD INTEL G31 ICH7 SCHEMATIC DIAGRAM BC615 DIODE 20B2 samsung u252 20b1 diode TP-107-02 SAMSUNG R60 plus S3F94 SLB9635TT1.2
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents SEDONA_plus Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS


    Original     		PDF Yonah667 BA41-00697A CALISTP11574 TP11575 TP11578 TP11579 TP11516 TP11517 TP11520 2SD618 MOTHERBOARD INTEL G31 ICH7 SCHEMATIC DIAGRAM BC615 DIODE 20B2 samsung u252 20b1 diode TP-107-02 SAMSUNG R60 plus S3F94 SLB9635TT1.2

    Untitled

    Abstract: No abstract text available
    Text: Technical Information ModSTACK 6MS1200R17KE3-3F-B16B9C23VTIO Vorläufige Daten preliminary data Key data 3x 663A rms at 690V rms, forced air fan included General information Stacks for various inverter application. Semiconductors, heat sinks, capacitors, drivers and


    Original     		PDF 6MS1200R17KE3-3F-B16B9C23VTIO 3564E26. 1231423567896AB3C736DCEF32 4112BF3567896

    Untitled

    Abstract: No abstract text available
    Text: FU JITSU MOS Memories • MB8418A-12, MB8418A-12L, MB8418A-15, M B8418A-15L CMOS 16,384-Bit Static Random Access Memory Description The F ujitsu M B6418A is a 2048-word by 8-bit s ta tic random a c­ ce ss memory fabricated w ith C M O S silico n gate process. The


    OCR Scan     		PDF MB8418A-12, MB8418A-12L, MB8418A-15, B8418A-15L 384-Bit B6418A 2048-word MB8418A B8418A-12 B8418A-12L

    Untitled

    Abstract: No abstract text available
    Text: 2 3 5 4 6 X X A i_n ii 0 2,8 Lochbi Id Kontaktanordnung board d r i l l ings contact arrangement a l l e Locher +0,1 a l l holes 00,05 i_n 01 B 1 28 25 22 CN _ _ _ _I LO X C V | C V I o -H m 24 E i n p r e s s K ontakte 2 — Pos i t i on 5 13 31 25 19 28


    OCR Scan     		PDF D-32339

    2-1393641-8

    Abstract: No abstract text available
    Text: 12 11 10 8 13 14 15 16 Termination Styles 95 -0.4 - 0.1 D - 0.1 C 55 — 0.1 D - 0.1 C -0 4 59,76 0.4 - — 0.1 D - 0.1 C So I der t e r mi nat i ons OQZQ-ZQZZE- Code m 0 J 6 -0.08 03À1 2,1 o B j T r a c e a b i I i t y - i d e n t i f i c a t i on Manufacturing


    OCR Scan     		PDF OQZQ-ZQZZE03 SR10-0198-01 2-1393641-8

    M6800 programming manual

    Abstract: PIR based human motion DETECTOR CIRCUIT DIAGRAM MC6820 PIA mcm6830 BURROUGHS self scan car ecu microprocessors DVD CD 5888 CB MC6810 IP 8082 BL 4013 FLIP FLOP APPLICATION DIAGRAMS
    Text: MOTOROLA M 6800 Microprocessor Appi i cat i ons Manual B e n c h m a r k F a m ily F o r M ic r o c o m p u t e r S y s te m s I I I tlß i by C om puter A p p lic a tio n s Engineering M OTOROLA S e m ic o n d u c to r Products Inc. M6800 APPLICATION MANUAL


    OCR Scan     		PDF 1B800 M6800 M6800 programming manual PIR based human motion DETECTOR CIRCUIT DIAGRAM MC6820 PIA mcm6830 BURROUGHS self scan car ecu microprocessors DVD CD 5888 CB MC6810 IP 8082 BL 4013 FLIP FLOP APPLICATION DIAGRAMS

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF

    C42334

    Abstract: C42334-A416-C40
    Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 3 2 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. By - 5 5 - 0 ,4 0,' 8 5 - 0 ,2 c OLD P / N 0,' 4 4 ,4 - 0 ,2 0,1 C 0,1 C WITHOUT V 4 2 2 5 4 - x-xxxxxxx-x 31 0MMÀÀ 2,1 (YY), 2 DIGITS FOR WEEK DATE CONSISTING


    OCR Scan     		PDF ECR--10--002555 ECR--10--026542 03JUN10 27MAY11 14FEB89 C42334 C42334-A416-C40

    b641-b

    Abstract: No abstract text available
    Text: Order this document by 5VEDOB64D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1, 2M x 6 4 D R A M D u al-In -L in e M em ory M odule D IM M 5 V, EDO, Buffered 8 and 16 Megabyte • JE D E C -S tandard 168-Lead D u a l-In -L in e Memory Module (DIMM) • Single 5 V Power Supply, T TL-C om patible Inputs and Outputs


    OCR Scan     		PDF 5VEDOB64D/D 168-Lead 8MB/16MB: 115A-01 MB641 BT48TADG60 B642BT48TADG60 5VEDOB64D b641-b

    si8594

    Abstract: MAS 10 RCD programming U64D
    Text: O rder this docum ent by 3VEDO U64D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1,2, 4M D R A M D u al-ln -L in e M em ory M odule D IM M 64 3.3 V, EDO, Unbuffered 1M x 64 (8M B), 2M x 64 (16M B) 1 6 8 -L E A D DIMM CASE 1115C-01 BACK FRO NT 8 ,1 6 , and 32 Megabyte


    OCR Scan     		PDF U64D/D 168-Lead 8MB/16MB: 1115C-01 3VEDOU64D/D si8594 MAS 10 RCD programming U64D