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    2112B Search Results

    2112B Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    87520-2112BLF Amphenol Communications Solutions USB 2.0, Input Output Connector, USB Type A, Standard, Right Angle, Through Hole, Single Decks, 4 Positions Visit Amphenol Communications Solutions

    2112B Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2112B Unknown IC Datasheet (Short Description and Cross Reference Only) Scan PDF
    SF Impression Pixel

    2112B Price and Stock

    Fix Supply 62112BMG

    Machine Bolt - Hex Head - Hot Di
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 62112BMG 145,454 55
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    Skyworks Solutions Inc SI52112-B6-GTR

    IC OSC PCI EXPRESS 2OUT 8TSSOP
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    DigiKey SI52112-B6-GTR Reel 5,000 2,500
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    Mouser Electronics SI52112-B6-GTR 2,340
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    Rochester Electronics SI52112-B6-GTR 12,500 1
    • 1 $4.46
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    Richardson RFPD SI52112-B6-GTR 1
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    Skyworks Solutions Inc SI52112-B4-GM2R

    IC OSC PCI EXPRESS 2OUT 10TDFN
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    DigiKey SI52112-B4-GM2R Cut Tape 3,937 1
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    Richardson RFPD SI52112-B4-GM2R 1
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    Skyworks Solutions Inc SI52112-B5-GM2R

    IC OSC PCI EXPRESS 2OUT 10TDFN
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    DigiKey SI52112-B5-GM2R Cut Tape 3,021 1
    • 1 $6.13
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    SI52112-B5-GM2R Reel 3,000 3,000
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    Mouser Electronics SI52112-B5-GM2R 2,015
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    Richardson RFPD SI52112-B5-GM2R 1
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    TDK Epcos B82733F2112B001

    CMC 47MH 1.1A 2LN TH
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey B82733F2112B001 Tray 735 1
    • 1 $2.61
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    2112B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC58NVG1S3ETA00

    Abstract: TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111
    Text: TC58NVG1S3ETA00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG1S3E is a single 3.3V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


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    PDF TC58NVG1S3ETA00 TC58NVG1S3E 2048blocks. 2112-byte 2010-01-25C TC58NVG1S3ETA00 TC58NVG1S3ET TC58NVG1S3 TC58NVG1S3ETA DIN2111

    TAG 8926

    Abstract: Lpg 899 SDC 2921 TF 6221 HEN LED display 12V+RELAY+1+C/8 pin ic sdc 3733
    Text: MCIMX31 and MCIMX31L Multimedia Applications Processors Reference Manual MCIMX31RM Rev. 1 2/2006 How to Reach Us: USA/Europe/Locations Not Listed: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-521-6274 or 480-768-2130


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    PDF MCIMX31 MCIMX31L MCIMX31RM IOIS16 IOIS16/WP MCIMX31L TAG 8926 Lpg 899 SDC 2921 TF 6221 HEN LED display 12V+RELAY+1+C/8 pin ic sdc 3733

    ata5272

    Abstract: 125KHz LF coil antenna for Automotive ATA5791 automotive Immobilizer atmel 545 9241a IMMOBILIZER Antenna Coil immobilizer immobilizer AUTOMOTIVE KEY operation ATA572x
    Text: Atmel ATA5791 Embedded AVR Microcontroller Including RF Transmitter and Complete LF Functionality for Passive Entry/Passive Start Keys PRELIMINARY SUMMARY DATASHEET Features ● System solution for immobilizer and Passive Entry/Passive Start PEPS functionality


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    PDF ATA5791 2112-byte 32-bit 38-pin AES-128 ata5272 125KHz LF coil antenna for Automotive ATA5791 automotive Immobilizer atmel 545 9241a IMMOBILIZER Antenna Coil immobilizer immobilizer AUTOMOTIVE KEY operation ATA572x

    TC58NYG0S3E

    Abstract: TC58NYG0S3ETA00 TC58NYG0S
    Text: TC58NYG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


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    PDF TC58NYG0S3ETA00 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NYG0S3ETA00 TC58NYG0S

    KFG2G16Q2A

    Abstract: 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash
    Text: OneNAND2G KFG2G16Q2A-DEBx OneNAND4G(KFH4G16Q2A-DEBx) FLASH MEMORY KFG2G16Q2A KFH4G16Q2A 2Gb OneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF KFG2G16Q2A-DEBx) KFH4G16Q2A-DEBx) KFG2G16Q2A KFH4G16Q2A 80x11 KFG2G16Q2A) KFH4G16Q2A) KFG2G16Q2A 0307h 0719h 63FBGA KFG2G16 onenand oneNand flash

    JESD97

    Abstract: NAND04G-B2D TSOP48 outline
    Text: NAND16GW3B4D 16-Gbit 4 x 4 Gbits , two Chip Enable, 2112-byte page, 3 V supply, single level, multiplane, NAND flash memory Preliminary Data Features • High-density NAND flash memory – 16 Gbits of memory array – 512 Mbits of spare area – Cost-effective solutions for mass storage


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    PDF NAND16GW3B4D 16-Gbit 2112-byte TSOP48 JESD97 NAND04G-B2D TSOP48 outline

    63FBGA

    Abstract: KFG1G16Q2B onenand
    Text: OneNAND1Gb KFG1G16Q2B-DEBx FLASH MEMORY KFG1G16Q2B 1Gb OneNAND B-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    PDF KFG1G16Q2B-DEBx) KFG1G16Q2B 80x11 KFG1G16x2B) 63FBGA KFG1G16Q2B onenand

    JESD97

    Abstract: NAND08GW3C2B NAND16GW3C4B 16Gbit
    Text: NAND16GW3C4B 16-Gbit 2 x 8 Gbits , two Chip Enable, 2112-byte page, 3 V supply, multilevel, multiplane, NAND flash memory Preliminary Data Features • High density multilevel cell (MLC) flash memory – 16 Gbits of memory array – 512 Mbits of spare area


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    PDF NAND16GW3C4B 16-Gbit 2112-byte JESD97 NAND08GW3C2B NAND16GW3C4B 16Gbit

    48-pin TSOP

    Abstract: K9K2G08U0M 48-pin TSOP (I) flash memory K9K2G08U0M-YCB0 samsung 1Gb nand flash SAMSUNG 4gb NAND Flash Qualification Report K9K2G08Q0M-Y K9K2G08Q0M-YCB0 K9K2G16Q0M-Y K9K2G16Q0M-YCB0
    Text: K9K2G08Q0M-YCB0,YIB0 K9K2G08U0M-YCB0,YIB0 Advance FLASH MEMORY K9K2G16Q0M-YCB0,YIB0 K9K2G16U0M-YCB0,YIB0 K9KDocument Title 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue Aug. 30.2001


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    PDF K9K2G08Q0M-YCB0 K9K2G08U0M-YCB0 K9K2G16Q0M-YCB0 K9K2G16U0M-YCB0 48-pin TSOP K9K2G08U0M 48-pin TSOP (I) flash memory samsung 1Gb nand flash SAMSUNG 4gb NAND Flash Qualification Report K9K2G08Q0M-Y K9K2G16Q0M-Y

    Untitled

    Abstract: No abstract text available
    Text: Power line chokes Current-compensated D core double chokes 250 V AC, 0.4 … 2.2 A, 3.3 … 100 mH, +40 °C Series/Type: B82732R/W Date: July 2012 a~í~=pÜÉÉí EPCOS AG 2012. Reproduction, publication and dissemination of this publication, enclosures


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    PDF B82732R/W B82732R/W B82732R

    Untitled

    Abstract: No abstract text available
    Text: MEMORY MODULE FLASH Nand 1Gx8-SOP Flash Memory MODULE 3DFN4G08VS1636 8Gbit Flash Nand organized as 1Gx8, based on 512Mx8 Pin Assignment Top View SOP 50 (Pitch : 0.50 mm) – Package D1 Features - Organization -Memory Cell Array (512M+16.384KM)bitx8. - Automatic Program and Erase


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    PDF 3DFN4G08VS1636 512Mx8 384KM 3DFP-0636-REV

    for lpc3180

    Abstract: UM10198 PLL397 Philips power supply PE 1957 8044 8048 microcontroller role in keyboard interface nand flash algorithm, arm9, micron LM 4088 hynix nand PROGRAMMING K9K1208Q0C
    Text: UM10198 LPC3180 User Manual Rev. 01 — 6 June 2006 Document information Info Content Keywords LPC3180; ARM9; 16/32-bit ARM microcontroller Abstract User manual for LPC3180 User manual UM10198 Philips Semiconductors LPC3180 User Manual Revision history Rev


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    PDF UM10198 LPC3180 LPC3180; 16/32-bit LPC3180 UM10198 for lpc3180 PLL397 Philips power supply PE 1957 8044 8048 microcontroller role in keyboard interface nand flash algorithm, arm9, micron LM 4088 hynix nand PROGRAMMING K9K1208Q0C

    HY27UF082G2A

    Abstract: HY27UF162G2A hy27uf082G hy27uf082 52-ULGA hynix nand 2G hynix nand flash 2gb HY27UF hynix nand hynix nand spare area
    Text: HY27UF 08/16 2G2A Series 2Gbit (256Mx8bit/128Mx16bit) NAND Flash 2Gb NAND FLASH HY27UF082G2A HY27UF162G2A This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.


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    PDF HY27UF 256Mx8bit/128Mx16bit) HY27UF082G2A HY27UF162G2A HY27UF082G2A HY27UF162G2A hy27uf082G hy27uf082 52-ULGA hynix nand 2G hynix nand flash 2gb hynix nand hynix nand spare area

    Untitled

    Abstract: No abstract text available
    Text: NAND02G-B2D 2 Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, NAND Flash memories Preliminary Data Features • High density NAND Flash memory – Up to 2 Gbit memory array – Cost-effective solution for mass storage applications ■


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    PDF NAND02G-B2D 2112-byte/1056-word TSOP48

    Samsung Flash K9WAG08U1A

    Abstract: K9K8G08U0A K9K8G08U0A-PCB0 K9WAG08U0A K9F4G08U0A Samsung K9K8G08U0A K9WAG08U1A K9WAG08U1A-PCB0 K9XXG08UXA K9NBG08U5A
    Text: K9WAG08U1A K9K8G08U0A K9NBG08U5A FLASH MEMORY K9XXG08UXA INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


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    PDF K9WAG08U1A K9K8G08U0A K9NBG08U5A K9XXG08UXA Samsung Flash K9WAG08U1A K9K8G08U0A-PCB0 K9WAG08U0A K9F4G08U0A Samsung K9K8G08U0A K9WAG08U1A K9WAG08U1A-PCB0 K9XXG08UXA K9NBG08U5A

    A 7800

    Abstract: No abstract text available
    Text: DATASHEET BROCADE 7800 EXTENSION SWITCH DATASHEET BROCADE 7800 EXTENSION SWITCH DATA CENTER THE BROCADE 7800 EXTENSION SWITCH IS AN IDEAL PLATFORM FOR BUILDING OR EXPANDING A HIGH-PERFORMANCE SAN EXTENSION INFRASTRUCTURE FOR DISASTER RECOVERY, DATA PROTECTION, AND DATA MOBILITY STORAGE SOLUTIONS


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: MuxOneNAND1G KFM1G16Q2A-DEBx MuxOneNAND2G(KFN2G16Q2A-DEBx) FLASH MEMORY KFXXX16Q2A 1Gb MuxOneNAND A-die INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


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    PDF KFM1G16Q2A-DEBx) KFN2G16Q2A-DEBx) KFXXX16Q2A 80x11 KFG1G16Q2A) KFN2G16Q2A)

    10072h

    Abstract: structure chart of samsung company
    Text: MuxOneNAND512 KFM1216Q2M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND512 Part No. KFM1216Q2M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 48FBGA(LF) Version: Ver. 1.3 Date: June 15, 2005 1 MuxOneNAND512(KFM1216Q2M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,


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    PDF MuxOneNAND512 KFM1216Q2M) KFM1216Q2M 48FBGA 512Mb 10072h structure chart of samsung company

    samsung 2GB X16 Nand flash

    Abstract: SAMSUNG 4gb NAND Flash Qualification Report K9F1G16Q0M-YCB0 samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability
    Text: K9F1G08Q0M-YCB0,YIB0 K9F1G08U0M-YCB0,YIB0 K9F1G16Q0M-YCB0,YIB0 K9F1G16U0M-YCB0,YIB0 K9F1G08U0M-VCB0,VIB0 Advance FLASH MEMORY Document Title 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory Revision History Revision No History Draft Date Remark 0.0 1. Initial issue


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    PDF K9F1G08Q0M-YCB0 K9F1G08U0M-YCB0 K9F1G16Q0M-YCB0 K9F1G16U0M-YCB0 K9F1G08U0M-VCB0 samsung 2GB X16 Nand flash SAMSUNG 4gb NAND Flash Qualification Report samsung 2GB X8 Nand flash SAMSUNG NAND Flash Qualification Report SAMSUNG 128Mb NAND Flash Qualification Reliability SAMSUNG 256Mb NAND Flash Qualification Reliability

    Untitled

    Abstract: No abstract text available
    Text: Atmel ATA5790N Embedded AVR Microcontroller Including Complete LF Functionality for Passive Entry / Passive Start Keys PRELIMINARY SUMMARY DATASHEET Features System solution for immobilizer and Passive Entry/Passive Start PEPS functionality Optional integrated open source immobilizer software stack supports automotive


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    PDF ATA5790N 2112-byte 32-bit 38-pin AES-128

    ULGA52

    Abstract: NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C
    Text: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications


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    PDF NAND04G-B2D NAND08G-BxC 2112-byte/1056-word ULGA52 NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C

    K9F1G08U0A-PCB0

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K9F1G08R0A K9F1G08U0A K9K2G08U1A Document Title 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History Draft Date Remark 1. Initial issue 1. The tADL Address to Data Loading Time is added. - tADL Minimum 100ns (Page 11, 23~26)


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    PDF K9F1G08R0A K9F1G08U0A K9K2G08U1A 100ns K9F1G08U0A-PCB0

    SLC NAND endurance 100k

    Abstract: No abstract text available
    Text: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0


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    PDF KFM1G16Q2M-DEB6) KFN2G16Q2M-DEB6) KFM1G16Q2M-DEB6 KFN2G16Q2M-DEB6 63FBGA SLC NAND endurance 100k

    D1801

    Abstract: la 1201 sanyo transistor 2SB1201 2112b 2112-B 2SD 2581 2044B 2SB1201 2SD1801 21124- 4
    Text: Ordering number: EN 2112B 2SB1201/2SD1801 PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications Applications •Voltage regulators, relay drivers, lamp drivers, electrical equipment Features . Adoption of FBET, MBIT processes ■Large current capacity and wide ASO


    OCR Scan
    PDF 2112B 2SB1201/2SD1801 2SB1201/2SD1801-used 2SB1201 D1801 la 1201 sanyo transistor 2SB1201 2112b 2112-B 2SD 2581 2044B 2SB1201 2SD1801 21124- 4