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    FILTRONIC COMPONENTS Search Results

    FILTRONIC COMPONENTS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    FILTRONIC COMPONENTS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FPD6836

    Abstract: Filtronic* FPD6836 l0241 Modelling Report FPD6836 Filtronic Components MARK 8E diode Modelling TOM2
    Text: FPD6836 TOM3 and TOM2 Models 24/01/2005 Modelling Report FPD6836 TOM3 and TOM2 Models Version 1.0 - Mark Holm Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. Mark Holm 1 Filtronic Confidential FPD6836 TOM3 and TOM2 Models 24/01/2005


    Original     		PDF FPD6836 28GHz 25GHz Filtronic* FPD6836 l0241 Modelling Report FPD6836 Filtronic Components MARK 8E diode Modelling TOM2

    UCD CLASS D

    Abstract: 2391.0 remote control with 4 channels substitution manual transistor manual substitution ST260B SIGTEK
    Text: INSTALLATION AND OPERATIONS MANUAL for the ST260B Upstream and Downstream DOCSIS RF Tracer Version 2.06.0000 December 2, 2002 Filtronic-Sigtek, Inc. 9075 Guilford Road, Suite C-1 Columbia, MD 21046 USA This Page Intentionally Left Blank ST-260B Installation and Operations Manual


    Original     		PDF ST260B ST-260B UCD CLASS D 2391.0 remote control with 4 channels substitution manual transistor manual substitution SIGTEK

    FPD3000

    Abstract: 9809E DSA002831
    Text: FPD3000 TOM3 and TOM2 Models 27/01/2005 Modelling Report FPD3000 TOM3 and TOM2 Models Version 1.0 - Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. 1 FPD3000 TOM3 and TOM2 Models 27/01/2005 Introduction This report describes the models for the FPD3000 discrete p-HEMT device. The


    Original     		PDF FPD3000 allows2005 18GHz 9809E DSA002831

    FPD1500

    Abstract: No abstract text available
    Text: FPD1500 TOM3 and TOM2 Models 27/01/2005 Modelling Report FPD1500 TOM3 and TOM2 Models Version 1.0 - Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. 1 FPD1500 TOM3 and TOM2 Models 27/01/2005 Introduction This report describes the models for the FPD1500 discrete p-HEMT device. The


    Original     		PDF FPD1500 18GHz

    FPD750

    Abstract: FPD7612 417E TOM2 FILTRONIC modeling report Modelling
    Text: FPD7612 TOM3 and TOM2 Models 27/01/2005 Modelling Report FPD7612 TOM3 and TOM2 Models Version 1.0 - Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. 1 FPD7612 TOM3 and TOM2 Models 27/01/2005 Introduction This report describes the models for the FPD7612 discrete p-HEMT device. The


    Original     		PDF FPD7612 28GHz 25GHz FPD750 417E TOM2 FILTRONIC modeling report Modelling

    FPD200

    Abstract: No abstract text available
    Text: FPD200 TOM3 and TOM2 Models 24/01/2005 Modelling Report FPD200 TOM3 and TOM2 Models Version 1.0 - Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. 1 FPD200 TOM3 and TOM2 Models 24/01/2005 Introduction This report describes the models for the FPD200 discrete p-HEMT device. The


    Original     		PDF FPD200 28GHz 25GHz

    FPD750

    Abstract: LAMBDA alpha 400 FILTRO 1000pF-0
    Text: FPD750 TOM3 and TOM2 Models 24/01/2005 Modelling Report FPD750 TOM3 and TOM2 Models Version 1.0 - Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. 1 FPD750 TOM3 and TOM2 Models 24/01/2005 Introduction This report describes the models for the FPD750 discrete p-HEMT device. The


    Original     		PDF FPD750 40GHz 05GHz LAMBDA alpha 400 FILTRO 1000pF-0

    SSG 23 TRANSISTOR

    Abstract: 1P503 FPM2750QFN Filtronic Components
    Text: FPM2750QFN Datasheet v2.5 LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE PACKAGE: FEATURES: • • • • • • • Balanced low noise amplifier module Excellent Noise figure: 0.4dB at 1850MHz Low drive current: 40mA typical 3.0V Combined IP3: 36dBm (100mA)


    Original     		PDF FPM2750QFN 1850MHz 36dBm 100mA) 23dBm 2002/95/EC) FPM2750QFN 22A114. MIL-STD-1686 SSG 23 TRANSISTOR 1P503 Filtronic Components

    FPD750

    Abstract: SSG 23 TRANSISTOR Filtronic Components FPM2750QFN 1P503 SSG TRANSISTOR Filtronic Compound Semiconductors 36347
    Text: FPM2750QFN Preliminary Datasheet v2.4 LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE FEATURES: • • • • • • • PACKAGE: Balanced low noise amplifier module Excellent Noise figure: 0.4dB at 1850MHz Low drive current: 40mA typical 3.0V Output IP3: 32dBm (40mA); 36dBm (100)


    Original     		PDF FPM2750QFN 1850MHz 32dBm 36dBm 18dBm 2002/95/EC) FPM2750QFN 22A114. MIL-STD-1686 MIL-HDBK-263. FPD750 SSG 23 TRANSISTOR Filtronic Components 1P503 SSG TRANSISTOR Filtronic Compound Semiconductors 36347

    FPM2750

    Abstract: CAP-22nF-0603-10 Filtronic Components
    Text: FPM2750QFN Datasheet v3.0 LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE PACKAGE: FEATURES: • • • • • • • Balanced low noise amplifier module Excellent Noise figure: 0.4dB at 1850MHz Low drive current: 40mA typical 3.0V Combined IP3: 36dBm (100mA)


    Original     		PDF FPM2750QFN 1850MHz 36dBm 100mA) 23dBm 2002/95/EC) FPM2750QFN 22A114. MIL-STD-1686 FPM2750 CAP-22nF-0603-10 Filtronic Components

    FILTRONIC CROSS REFERENCE

    Abstract: SSG 23 TRANSISTOR FPD750SOT89 TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD1500DFN MIL-HDBK-263 Filtronic Compound Semiconductors
    Text: FPD1500DFN Datasheet v2.3 LOW NOISE HIGH LINEARITY PACKAGED PHEMT FEATURES 1850MHZ : • • • • • • RoHS PACKAGE: 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency 9 FPD1500DFN - RoHS compliant


    Original     		PDF FPD1500DFN 1850MHZ) FPD1500DFN MIL-STD-1686 MIL-HDBK-263. EB1500DFN-BB 900MHz EB1500DFN-BA FILTRONIC CROSS REFERENCE SSG 23 TRANSISTOR FPD750SOT89 TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB MIL-HDBK-263 Filtronic Compound Semiconductors

    BC 148 TRANSISTOR DATASHEET

    Abstract: MIL-HDBK-263 FILTRONIC CROSS REFERENCE SSG 23 TRANSISTOR TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD1500DFN FPD750SOT89
    Text: FPD1500DFN Datasheet v2.4 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency 9 RoHS compliant


    Original     		PDF FPD1500DFN 1850MHZ) FPD1500DFN MIL-STD-1686 MIL-HDBK-263. EB1500DFN-BB 900MHz EB1500DFN-BA 85GHz BC 148 TRANSISTOR DATASHEET MIL-HDBK-263 FILTRONIC CROSS REFERENCE SSG 23 TRANSISTOR TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD750SOT89

    high power transistor s-parameters

    Abstract: No abstract text available
    Text: FPD750SOT343 Datasheet v2.2 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: ROHS: FEATURES 1850MHZ : • • • • • 9 0.5 dB N.F.min. 20 dBm Output Power (P1dB) 16.5 dB Small-Signal Gain (SSG) 37 dBm Output IP3 RoHS compliant (Directive 2002/95/EC)


    Original     		PDF FPD750SOT343 1850MHZ) 2002/95/EC) FPD750SOT343 EB750SOT343-BB EB750SOT343-BA EB750SOT343-BC 22-A114. EB750SOT343-BE EB750SOT343-BG high power transistor s-parameters

    2S110

    Abstract: transistor bc 647 SSG 23 TRANSISTOR FPD750SOT89 FPD750SOT89E
    Text: FPD750SOT89 Datasheet v2.4 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1.85GHZ : • • • • • • RoHS 25 dBm Output Power (P1dB) 9 18 dB Small-Signal Gain (SSG) 0.6 dB Noise Figure 39 dBm Output IP3 55% Power-Added Efficiency FPD750SOT89E: RoHS compliant


    Original     		PDF FPD750SOT89 85GHZ) FPD750SOT89E: 2002/95/EC) FPD750SOT89 EB750SOT89 2S110 transistor bc 647 SSG 23 TRANSISTOR FPD750SOT89E

    FMA3051

    Abstract: FMA3051-000
    Text: FMA3051 Pilot Datasheet v2.1 12.5-15.5 GHZ MMIC HIGH POWER AMPLIFIER FEATURES • • • • • • FUNCTIONAL SCHEMATIC 35 dB Gain 30 dBm P1dB Output Power at 6 V, 1.2 A 40 dBm OIP3 pHEMT Technology On-chip output power detector 5 x 3 sq. mm die D1 D2 D3 D4


    Original     		PDF FMA3051 FMA3051 22-A114. MIL-STD-1686 MILHDBK-263. FMA3051-000

    10ghz optical modulator driver

    Abstract: 10ghz modulator driver 10ghz optical modulator Filtronic optical modulator driver MAX002 mach-zender Filtronic Components
    Text: Optical Communications MAX002 Modulator Driver Amplifier Applications • • OC-192 Transmission Systems Drives EA or MZM Features • • • • • • • Miniature Size High Output Power Ultra Broadband Flat Gain Characteristic MMIC Monitor Output Gain and Offset Control


    Original     		PDF MAX002 OC-192 MAX002 30kHz 30kHz 15GHz 10GHz /-25ps 10ghz optical modulator driver 10ghz modulator driver 10ghz optical modulator Filtronic optical modulator driver mach-zender Filtronic Components

    ims pcb

    Abstract: No abstract text available
    Text: FPD1000AS Datasheet v2.1 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency


    Original     		PDF FPD1000AS FPD1000AS PARSTD-1686 MIL-HDBK-263. FPD1000AS-EB EB-1000AS-AB 880MHz) EB-1000AS-AA 85GHz) ims pcb

    FMA3025SOT89

    Abstract: 900MHZ 09101
    Text: FMA3025SOT89 LOW NOISE HIGH LINEARITY PACKAGED MMIC • • • • • RoHS PACKAGE: FEATURES • V2.2 300-4000MHz 24 dBm P1dB 15 dB Gain @ 0.9GHz 42 dBm OIP3 2.1 dB Noise Figure @ 0.9GHz Single Supply +5V, 150mA GENERAL DESCRIPTION: The FMA3025SOT89 is a low cost packaged


    Original     		PDF FMA3025SOT89 300-4000MHz 150mA FMA3025SOT89 2002/95/EC) 15GHZ EB3025SOT89 22-A114. 900MHZ 09101

    SSG 23 TRANSISTOR

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD1500DFN FPD750SOT89 MIL-HDBK-263 Filtronic Compound Semiconductors
    Text: FPD1500DFN Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • 27 dBm Output Power (P1dB) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency RoHS compliant (Directive 2002/95/EC)


    Original     		PDF FPD1500DFN 1850MHZ) 2002/95/EC) FPD1500DFN MIL-STD-1686 MIL-HDBK-263. EB1500DFN-BB 900MHz EB1500DFN-BA SSG 23 TRANSISTOR BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 EB1500DFN-BA EB1500DFN-BB FPD750SOT89 MIL-HDBK-263 Filtronic Compound Semiconductors

    FPD6836SOT343

    Abstract: FPD6836SOT343E MIL-HDBK-263 te 804 Filtronic 423
    Text: FPD6836SOT343 Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • 0.5 dB Noise Figure at 25% Bias 19 dBm Output Power (P1dB) 19 dB Small-Signal Gain (SSG) 32 dBm Output IP3 at 50% Bias RoHS compliant (Directive 2002/95/EC)


    Original     		PDF FPD6836SOT343 1850MHZ) 2002/95/EC) FPD6836SOT343 22A114. MIL-STD-1686 MIL-HDBK-263. FPD6836SOT343E MIL-HDBK-263 te 804 Filtronic 423

    stepper

    Abstract: TRANSISTOR BC 157 Z5 1512 EB750DFN-BA EB750DFN-BB FPD750DFN FPD750SOT89 MIL-HDBK-263
    Text: FPD750DFN Datasheet v2.3 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • • RoHS 24 dBm Output Power (P1dB) 20 dB Small-Signal Gain (SSG) 0.3 dB Noise Figure 39 dBm Output IP3 at 50% Bias 45% Power-Added Efficiency


    Original     		PDF FPD750DFN 1850MHZ) FPD750DFN MIL-STD-1686 MIL-HDBK-263. EB750DFN-BB 900MHz EB750DFN-BA 85GHz stepper TRANSISTOR BC 157 Z5 1512 EB750DFN-BA EB750DFN-BB FPD750SOT89 MIL-HDBK-263

    Radar Warning Receiver

    Abstract: radar system with circuit diagram diagram radar circuit Introduction to Radar Warning Receiver Types of Radar Antenna radar block diagram x band radar RF receiver Ground Radar diagram radar warning receiver data 4 way video distribution amplifier
    Text: Man Portable Radar Warning Receiver For Covert and U.A.V. Applications Figure 1 RWR Unit Introduction The unit is designed for Radar Warning Receiver RWR applications where small size and low power consumption are of prime importance, with filtering, amplification, detection and frequency


    Original     		PDF

    SMD-B 053

    Abstract: FPD4000AF BTS 308 atc600 ATC600S1R0
    Text: FPD4000AF Datasheet v2.1 4W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: High power AF package 36.5 dBm Output Power P1dB 10.5 dB Power Gain (G1dB) 49 dBm Output IP3 10V Operation 45% Power-Added Efficiency Usable Gain to 4GHz GENERAL DESCRIPTION:


    Original     		PDF FPD4000AF FPD4000AF FPD4000AF-EB EB-2000AS-AB 880MHz) EB-2000AS-AA 85GHz) EB-2000AS-AC EB-2000AS-AE SMD-B 053 BTS 308 atc600 ATC600S1R0

    transistor marking code 1325

    Abstract: vp 3082 EV-SP-000044-001 MARKING W1 AD PHEMT marking code a FPD2000AS ipc 9701 filtronic Solid State
    Text: FPD2000AS Datasheet v2.4 2W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: 33 dBm Output Power P1dB @1.8GHz 14 dB Power Gain (G1dB) @1.8GHz 46 dBm Output IP3 10V Operation 50% Power-Added Efficiency Evaluation Boards Available Usable Gain to 4GHz


    Original     		PDF FPD2000AS FPD2000AS J-STD-020C, transistor marking code 1325 vp 3082 EV-SP-000044-001 MARKING W1 AD PHEMT marking code a ipc 9701 filtronic Solid State