Untitled
Abstract: No abstract text available
Text: Document Number: AFT26P100−4WS Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous
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AFT26P100â
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transistor SMD P2F
Abstract: FPD4000AF PHEMT marking code a pHEMT transistor 360 transistor STD P2F smd p2f transistor MIL-HDBK-263 transistor P2F ATC600S1R0 FET MARKING CODE
Text: PRELIMINARY FPD4000AF 4W PACKAGED POWER PHEMT • • PERFORMANCE 1.8 GHz ♦ 36.5 dBm Output Power (P1dB) ♦ 10.5 dB Power Gain (G1dB) ♦ 49 dBm Output IP3 ♦ 10V Operation ♦ 45% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Additional Design Data Available on Website
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FPD4000AF
FPD4000AF
ATC600S330JW250
T491B105M035AS7015
RCI-0603-10R1J
PC-SP-000022-002
AMP-103185-2
transistor SMD P2F
PHEMT marking code a
pHEMT transistor 360
transistor STD P2F
smd p2f transistor
MIL-HDBK-263
transistor P2F
ATC600S1R0
FET MARKING CODE
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Untitled
Abstract: No abstract text available
Text: MSWS4T-1004 PIN DIODE SWITCH ELEMENT PIN #13 PIN #8 PIN #16 PIN #5 PIN #2 Plastic Molded 16L 3x3 QFN Package paddle electrical & thermal ground Description Features A SP4T switch in a plastic 16L 3x3 QFN package. Each port is Electrical Series / Shunt Diode and Thermal
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MSWS4T-1004
A17141
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PIMD3
Abstract: No abstract text available
Text: NPT35050A Gallium Nitride 28V, 65W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for CW, pulsed, WiMAX, and other applications from 3300 – 3800 MHz • 90W P3dB PEP power • 65W P3dB CW power
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NPT35050A
3A001b
750mA,
NDS-003
PIMD3
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Untitled
Abstract: No abstract text available
Text: NPTB00050 Not recommended for new designs Contact applications@nitronex.com for questions or support Gallium Nitride 28V, 50W RF Power Transistor Not Recommended for New Designs FEATURES • Optimized for broadband operation from DC - 4000MHz • 50W P3dB CW narrowband power
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NPTB00050designs
4000MHz
500-1000MHz
3A982
450mA,
3000MHz,
NPTB00050
NDS-007
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8P20161HS
MRF8P20161HSR3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: AFT09MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT09MS031NR1 AFT09MS031GNR1 Designed for mobile two-way radio applications with frequencies from
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AFT09MS031N
AFT09MS031NR1
AFT09MS031GNR1
AFT09MS031NR1
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 2, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 1800 to
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MRF7P20040H
MRF7P20040HR3
MRF7P20040HSR3
10yees,
MRF7P20040HR3
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MD7IC2251N Rev. 0, 5/2012 RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2251N wideband integrated circuit is designed with on-chip matching that makes it usable from 2110 - 2170 MHz. This multi - stage
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MD7IC2251N
MD7IC2251N
MD7IC2251NR1
MD7IC2251GNR1
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Murata grm40
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MHVIC915R2 Rev. 6, 5/2005 RF LDMOS Wideband Integrated Power Amplifier MHVIC915R2 The MHVIC915R2 wideband integrated circuit is designed with on - chip matching that makes it usable from 750 to 1000 MHz. This multi - stage
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MHVIC915R2
MHVIC915R2
Murata grm40
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ATC600F0R1BT250XT
Abstract: No abstract text available
Text: Document Number: MRF8P18265H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for
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MRF8P18265H
MRF8P18265HR6
MRF8P18265HSR6
ATC600F0R1BT250XT
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MRF8P20140WH/HS
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8P20140WH
MRF8P20140WHR3
MRF8P20140WHSR3
MRF8P20140WH/HS
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Untitled
Abstract: No abstract text available
Text: Document Number: MRF8S18260H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF8S18260HR6 MRF8S18260HSR6 N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with
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MRF8S18260H
MRF8S18260HR6
MRF8S18260HSR6
MRF8S18260HR6
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Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P23160WH Rev. 0, 12/2011 RF Power Field Effect Transistors MRF8P23160WHR3 MRF8P23160WHSR3 N-Channel Enhancement-Mode Lateral MOSFETs Designed for base station applications with wide instantaneous bandwidth
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MRF8P23160WH
MRF8P23160WHR3
MRF8P23160WHSR3
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ATC100A101JP150
Abstract: GT5040 MRFG35010ANT1 ATC100B101JP500XT 080514R7BBS ATC100A100JP150X ATC100A101JP150XT Transistor Z14
Text: Freescale Semiconductor Technical Data Document Number: MRFG35010AN Rev. 3, 12/2012 Gallium Arsenide pHEMT RF Power Field Effect Transistor MRFG35010ANT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB
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MRFG35010AN
MRFG35010ANT1
DataMRFG35010AN
ATC100A101JP150
GT5040
MRFG35010ANT1
ATC100B101JP500XT
080514R7BBS
ATC100A100JP150X
ATC100A101JP150XT
Transistor Z14
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ON SEMICONDUCTOR J122
Abstract: J730 512 j122 MHz-2170 EMVY500ADA221MJA0G ATC600F1R2BT250XT 8383d 146 J122
Text: Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical
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MRF8HP21130H
MRF8HP2113ficers,
MRF8HP21130HR3
MRF8HP21130HSR3
MRF8HP21130H
ON SEMICONDUCTOR J122
J730
512 j122
MHz-2170
EMVY500ADA221MJA0G
ATC600F1R2BT250XT
8383d
146 J122
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TO272
Abstract: RM73B2BT A113 GRM42 MWIC930 MWIC930GR1 MWIC930R1 2XE3
Text: MOTOROLA Order this document by MWIC930/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF LDMOS Integrated Power Amplifiers MWIC930R1 MWIC930GR1 The MWIC930 wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Motorola’s newest High Voltage 26 to
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MWIC930/D
MWIC930R1
MWIC930GR1
MWIC930
MWIC930R1
TO272
RM73B2BT
A113
GRM42
MWIC930GR1
2XE3
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transistor marking code 1325
Abstract: R04003 ims pcb filtronic Solid State
Text: FPD1000AS Datasheet v2.4 1W PACKAGED POWER PHEMT FEATURES: • • • • • • • • PACKAGE 31 dBm Output Power P1dB @1.8GHz 15 dB Power Gain (G1dB) @ 1.8GHz 43 dBm Output IP3 -42 dBc WCDMA ACPR at 21 dBm PCH 10V Operation 50% Power-Added Efficiency
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FPD1000AS
FPD1000AS
J-STD-020C,
transistor marking code 1325
R04003
ims pcb
filtronic Solid State
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MMG3014N
Abstract: No abstract text available
Text: Available at http://www.freescale.com. Go to Support/Software & Tools/ Additional Resources/Reference Designs/Networking Freescale Semiconductor Technical Data Rev. 0, 5/2010 RF Reference Design Library MMG3014N Driving MW7IC2240N W- CDMA RF Power Amplifier Lineup
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MMG3014N
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eaton el 198
Abstract: ITE circuit breakers "cross reference" WESTINGHOUSE motor life line westinghouse ITE circuit breakers wiring diagram STAR DELTA motor sequential starter Project Report of smoke alarm using IC 555 doc ITE/Gould relay j13 MTBF fit IGBT 1200 UNITROL 1000
Text: Electrical Sector Solutions Volume 3 Power Distribution and Control Assemblies Volume 3: Power Distribution and Control Assemblies Eaton Corporation Electrical Sector 1111 Superior Ave. Cleveland, OH 44114 United States 877-ETN-CARE 877-386-2273 Eaton.com
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877-ETN-CARE
CA08100004E
V3-T2-65
V3-T2-42â
V3-T2-52
V3-T2-39â
V3-T2-41
V3-T9-254
V3-T7-17
CA08100004Eâ
eaton el 198
ITE circuit breakers "cross reference"
WESTINGHOUSE motor life line
westinghouse
ITE circuit breakers
wiring diagram STAR DELTA motor sequential starter
Project Report of smoke alarm using IC 555 doc
ITE/Gould relay j13
MTBF fit IGBT 1200
UNITROL 1000
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GRM39COG221J050AD
Abstract: A17014 MMA707 MMA707-3030 ATC600S1R8AT250 A55085 Rogers RO4003 grm39 RO40 GRM39COG221J050A
Text: MMA707 1 Watt InGaP HBT Amplifier FEATURES MMA707 • High Output Power: +31 dBm Typ -3030 • High 3rd Order IP: +50 dBm (Typ) • High Dynamic Range: 97 dB (Typ) 3mm x 3mm square • 3mm square QFN plastic package DESCRIPTION The MMA707-3030 is a Power InGaP HBT device that is designed to provide moderate power
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MMA707
MMA707-3030
A17014
GRM39COG221J050AD
A17014
MMA707
ATC600S1R8AT250
A55085
Rogers RO4003
grm39
RO40
GRM39COG221J050A
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Abstract: No abstract text available
Text: CGHV27030S 30 W, DC - 6.0 GHz, GaN HEMT The CGHV27030S is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications
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CGHV27030S
CGHV27030S
CGHV27
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mosfet J442
Abstract: ATC600F2R0BT250XT J442 CW12010T0050G ATC600F100JT250XT CW12010T0050GBK AN1955 96VDD J596
Text: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8P20161HS
MRF8P20161HSR3
mosfet J442
ATC600F2R0BT250XT
J442
CW12010T0050G
ATC600F100JT250XT
CW12010T0050GBK
AN1955
96VDD
J596
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY CGHV40030 30 W, DC - 6 GHz, 50V, GaN HEMT Cree’s CGHV40030 is an unmatched, gallium nitride GaN high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band
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CGHV40030
CGHV40
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