EV-SP-000044-001
Abstract: FPD200 CB100 FPD20 FPD2000AS RO4003 cw 7687 A114 es IPC 9701 W2020
Text: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT NOT FOR NEW DESIGNS Package Style: AS Product Description Features Optimum Technology Matching Applied GaAs HBT GaAs MESFET DE InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT
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FPD2000AS
33dBm
46dBm
FPD2000AS
85GHz)
EB2000AS-AA
DS100125
EV-SP-000044-001
FPD200
CB100
FPD20
RO4003
cw 7687
A114 es
IPC 9701
W2020
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fpd2000as
Abstract: FPD200 CB100 FPD20 RO4003 InP HBT transistor low noise
Text: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT Package Style: AS Product Description Features The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power applications in L-Band. The surface-mount package has been optimized
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FPD2000AS
FPD2000AS
33dBm
46dBm
85GHz)
EB2000AS-AA
14GHz)
EB2000AS-AD
EB2000AS-AG
FPD200
CB100
FPD20
RO4003
InP HBT transistor low noise
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P 9806 AD
Abstract: No abstract text available
Text: FPD2000AS FPD2000AS 2W Packaged Power pHEMT 2W PACKAGED POWER pHEMT RoHS Compliant and Pb-Free Package: 4.4mmx3.8mm Product Description Features The FPD2000AS is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , optimized for power
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FPD2000AS
FPD2000AS
33dBm
46dBm
880MHz)
EB-2000AS-AB
85GHz)
EB-2000AS-AA
P 9806 AD
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transistor marking code 1325
Abstract: vp 3082 EV-SP-000044-001 MARKING W1 AD PHEMT marking code a FPD2000AS ipc 9701 filtronic Solid State
Text: FPD2000AS Datasheet v2.4 2W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: 33 dBm Output Power P1dB @1.8GHz 14 dB Power Gain (G1dB) @1.8GHz 46 dBm Output IP3 10V Operation 50% Power-Added Efficiency Evaluation Boards Available Usable Gain to 4GHz
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FPD2000AS
FPD2000AS
J-STD-020C,
transistor marking code 1325
vp 3082
EV-SP-000044-001
MARKING W1 AD
PHEMT marking code a
ipc 9701
filtronic Solid State
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transistor marking code 1325
Abstract: FPD2000AS filtronic Solid State
Text: FPD2000AS Datasheet v3.0 2W PACKAGED POWER PHEMT FEATURES: • • • • • • • PACKAGE: 33 dBm Output Power P1dB @1.8GHz 14 dB Power Gain (G1dB) @1.8GHz 46 dBm Output IP3 10V Operation 50% Power-Added Efficiency Evaluation Boards Available Usable Gain to 4GHz
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FPD2000AS
FPD2000AS
J-STD-020C,
transistor marking code 1325
filtronic Solid State
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transistor P2F
Abstract: p2f 250 PHEMT marking code a p2F 45 FPD2000AS MIL-HDBK-263 40 P1dB 2W transistor marking code 1325
Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available on Website ♦ Usable Gain to 4GHz
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FPD2000AS
FPD2000AS
350mA
transistor P2F
p2f 250
PHEMT marking code a
p2F 45
MIL-HDBK-263
40 P1dB 2W
transistor marking code 1325
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY • PERFORMANCE 1.8 GHz ♦ 33 dBm Output Power (P1dB) ♦ 14 dB Power Gain (G1dB) ♦ 46 dBm Output IP3 ♦ 10V Operation ♦ 50% Power-Added Efficiency ♦ Evaluation Boards Available ♦ Design Data Available ♦ Usable Gain to 4GHz • DESCRIPTION AND APPLICATIONS
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FPD2000AS
FPD2000AS
350mA
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RF5632
Abstract: PNP-1090-P22 UMX-254-D16-G UMX-333-D16-G RF1194 UMX-406-D16 SPF-5043Z UMX-519-D16-G SHF-0289 spf-5122z
Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product
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pnp-1500-p22
Abstract: UMZ-1147-R16-G RF5632 UMX-254-D16-G SPA-1002-27H UMX-119-D16-G spf-5189z ums-2000-A16-g spf-5122 UMX-406-D16
Text: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product
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