GP145
Abstract: MGF0915A PO36 MGF0915 fet GP145
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0915A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES
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MGF0915A
MGF0915A
26dBm
800mA
GP145
PO36
MGF0915
fet GP145
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MGF0914A
Abstract: fet 4901 0648
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0914A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0914A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES
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MGF0914A
MGF0914A
26dBm
800mA
50ohm
fet 4901
0648
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uhf 1kw amplifier
Abstract: MGF0916A
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES
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MGF0916A
MGF0916A
23dBm
100mA
uhf 1kw amplifier
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MGF0913A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] OUTLINE DRAWING DESCRIPTION Unit:mm Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES
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MGF0913A
MGF0913A
31dBm
18dBm
200mA
Unit39
50ohm
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FET K 1358
Abstract: 9452 smd MGF0916A fet smd 2657 FET
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm
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MGF0916A
MGF0916A
23dBm
100mA
50pcs)
June/2004
FET K 1358
9452 smd
fet smd
2657 FET
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FET K 1358
Abstract: MGF0916A gp 752 9452 smd
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=23dBm TYP. @f=1.9GHz,Pin=5dBm
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MGF0916A
MGF0916A
23dBm
100mA
50pcs)
FET K 1358
gp 752
9452 smd
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MGF0913A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm
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MGF0913A
MGF0913A
31dBm
18dBm
200mA
50pcs)
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MGF0913A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm
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MGF0913A
MGF0913A
31dBm
18dBm
200mA
50pcs)
June/2004
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gm 4511
Abstract: GP 841 Diode MGF0917A scl 1444
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm
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MGF0917A
MGF0917A
24dBm
gm 4511
GP 841 Diode
scl 1444
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4977 gm
Abstract: MGF0919A
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm
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MGF0919A
MGF0919A
30dBm
12dBm
300mA
4977 gm
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Mag 613
Abstract: MGF0918A
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0918A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=27dBm TYP. @f=1.9GHz,Pin=8dBm
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MGF0918A
MGF0918A
27dBm
150mA
Mag 613
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MGF0920A
Abstract: n channel fet k 1118
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm
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MGF0920A
MGF0920A
32dBm
15dBm
400mA
n channel fet k 1118
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mitsubishi 7805
Abstract: 7805 pi MGF0918A 7805 smd
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0918A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0918A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=27dBm TYP. @f=1.9GHz,Pin=8dBm
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MGF0918A
MGF0918A
27dBm
150mA
50pcs)
d-162
mitsubishi 7805
7805 pi
7805 smd
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MGF0913A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=1.9GHz,Pin=18dBm
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MGF0913A
MGF0913A
31dBm
18dBm
200mA
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MGF0920A
Abstract: IM335 pt 11400
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0920A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0920A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=32dBm TYP. @f=1.9GHz,Pin=15dBm
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MGF0920A
MGF0920A
32dBm
15dBm
400mA
50pcs)
t-155
IM335
pt 11400
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SMD CODE MARKING s7 SOT23
Abstract: PMBFJ111 PMBFJ174 BSR56 BFT46
Text: SMD FET’s DESCRIPTION • Philips Components surface mount range of FET’s is the most extensive available, and offers low parasitic capacitance, negligible inductance, and reduced board assembly cost. The three categories of FET’s each have its own attributes
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applicat174
PMBFJ175
PMBFJ176
PMBFJ177
OT-23
OT-89
OT-143
OT-223
OT-23
SMD CODE MARKING s7 SOT23
PMBFJ111
PMBFJ174
BSR56
BFT46
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MGF0915A
Abstract: GP145 MGF0915 PQ-32/CTD-17765
Text: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=36.5 dBm TYP. @ f=1.9GHz,Pin=23dBm
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MGF0915A
MGF0915A
23dBm
GP145
MGF0915
PQ-32/CTD-17765
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MGF0913A
Abstract: No abstract text available
Text: / \ MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0913A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=31dBm TYP. @ f=1.9GHz,Pin=18dBm
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MGF0913A
MGF0913A
31dBm
18dBm
200mA
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ADD30
Abstract: No abstract text available
Text: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit: The MGF0916A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power
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MGF0916A
MGF0916A
23dBm
100mA
ADD30
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GP145
Abstract: MGF0915
Text: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit: The MGF0915A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power
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MGF0915A
MGF0915A
26dBm
GP145
MGF0915
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MGF0916A
Abstract: 094-3 MAG
Text: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0916A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=23dBm TYP. @ f=1.9GHz,Pin=5dBm
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MGF0916A
MGF0916A
23dBm
100mA
094-3 MAG
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MGF0913A
Abstract: 1709-1
Text: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0913A L & S BAND GaAs FET [ SMD OUTLINE DRAWING DESCRIPTION non - matched ] urnt: Gate Mark Round corner The MGF0913A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES
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MGF0913A
MGF0913A
31dBm
18dBm
200mA
1709-1
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0914A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING The MGF0914A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Unit: FEATURES • High output power
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MGF0914A
MGF0914A
26dBm
800mA
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0919A L & S BAND G a As FET [ SMD non - matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=30dBm TYP. @ f=1,9GHz,Pin=12dBm
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MGF0919A
MGF0919A
30dBm
12dBm
300mA
voltage154
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