SCL 1058
Abstract: GP145 IDS800 MGF0915A fet GP145 3268
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm
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MGF0915A
MGF0915A
23dBm
50pcs)
SCL 1058
GP145
IDS800
fet GP145
3268
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MGF0915A
Abstract: SCL 1058
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm
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MGF0915A
MGF0915A
23dBm
50pcs)
SCL 1058
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60Ghz
Abstract: MGF0915A a4013
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm
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MGF0915A
MGF0915A
23dBm
50pcs)
60Ghz
a4013
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gp145dbf19ghz
Abstract: MGF0915A GP 0619 fet 2255
Text: 三菱半導体〈高周波デバイス〉 MGF0915A L & S帯高出力GaAs FET 概 要 M G F 09 1 5 A は U H F 帯 で の 増 幅 器 用 に 設 計 さ れ たN チ ャ ネ ル 外形図 単位:mm 0.80 Gate Mark Round corner GaAs FETです。
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MGF0915A
Pin23dBm
add50f1
IDS800mA
Rg100
VDS10V
800mA
800mA57
gp145dbf19ghz
MGF0915A
GP 0619
fet 2255
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MGF0915A
Abstract: No abstract text available
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 5 th Apr. 2005 SUBJECT: RF characteristics data of MGF0915A for Freq.=1.85-1.95GHz band SUMMARY: This application note show the RF characteristics data of MGF0915.A － － Sample history:
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MGF0915A
95GHz
MGF0915
MGF0915A
25deg
-900KHz)
900KHz)
-600KHz)
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idq06
Abstract: MGF0915A
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0915A for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0915A － － Sample history:
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MGF0915A
MGF0915A
35GHz
25deg
idq06
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GP145
Abstract: MGF0915A PO36 MGF0915 fet GP145
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit:mm The MGF0915A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. Gate Mark Round corner FEATURES
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MGF0915A
MGF0915A
26dBm
800mA
GP145
PO36
MGF0915
fet GP145
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MGF0915A
Abstract: No abstract text available
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 8 th Dec. 2005 SUBJECT: RF characteristics data of MGF0915A for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0915A － － Sample history:
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MGF0915A
MGF0915A
25deg
1000pF
51ohm
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MGF0915A
Abstract: idq06
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0915A for Freq.=2.11-2.17GHz band SUMMARY: This application note show the RF characteristics data of MGF0915.A － －
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MGF0915A
17GHz
MGF0915
MGF0915A
14GHz
25deg
idq06
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MGF0915A
Abstract: No abstract text available
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0915A for Freq.=2.3-2.4GHz band SUMMARY: This application note show the RF characteristics data of MGF0915A － － Sample history:
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MGF0915A
MGF0915A
35GHz
25deg
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm
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MGF0915A
MGF0915A
23dBm
50pcs)
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm
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MGF0915A
MGF0915A
23dBm
50pcs)
June/2004
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FET K 3728
Abstract: an 17830 IDS800 MGF0915A 4604 smd fet PO 168 GP 703
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm
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MGF0915A
MGF0915A
23dBm
FET K 3728
an 17830
IDS800
4604 smd fet
PO 168
GP 703
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0915A L & S BAND / 4.5W SMD non - matched DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5dBm(TYP.) @f=1.9GHz,Pin=23dBm
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MGF0915A
MGF0915A
23dBm
800mA
50pcs)
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MGF0915A
Abstract: No abstract text available
Text: MITSUBISHI APPLICATION NOTE ELECTRIC SEMICONDUCTOR Date : 25 th May. 2005 SUBJECT: RF characteristics data of MGF0915A for Freq.=2.5-2.7GHz band SUMMARY: This application note show the RF characteristics data of MGF0915.A － － Sample history:
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MGF0915A
MGF0915
MGF0915A
25deg
-10MHz)
10MHz)
61GHz
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smd 662
Abstract: MGF0915A 1084 fet smd
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @f=1.9GHz,Pin=23dBm
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MGF0915A
MGF0915A
23dBm
smd 662
1084 fet smd
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MGF4919G
Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
Text: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии
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SPP02N60
SPP03N60
SPP04N60
SPP07N60
SPP11N60
SPP20N60
SPW11N60
SPW20N60
SPW47N60
SPP02N80
MGF4919G
SP*02N60
SPP11N80
to-220 smd
MGF1601
SPW47N60
MGF0905A
SPW11N80
SPP11N60
SPP20N60
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12W SMD
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm
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MGF0951P
MGF0951P
31dBm
15GHz
20dBm
15GHz
200mA
12W SMD
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RG1000
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched DESCRIPTION The MGF0953P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=28.0dBm(TYP.) @f=2.15GHz,Pin=10dBm
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MGF0953P
MGF0953P
15GHz
10dBm
15GHz
RG1000
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0951P L & S BAND / 1.2W SMD / Plastic Mold non - matched DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm(TYP.) @f=2.15GHz,Pin=20dBm
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MGF0951P
MGF0951P
31dBm
15GHz
20dBm
15GHz
200mA
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C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
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M6STA-005VA/WA/SA
MF-156STA-006VA/WA/SA
MF-156SRA-002VA/WA/SA
MF-622STA-004VA/WA/SA
MF-622STA-005VA/WA/SA
MF-622STA-006VA/WA/SA
MF-622SRA-002VA/WA/SA
MF-2500STA-002VA/WA,
003VA/WA,
004VA/WA
C42V5964
MGF1302 TRANSISTOR
MGF1601
MGFC1402
M57721
M67760LC
H2 MARKING SOT-89 mmIC
2SC5125
MITSUBISHI M57710-A
M68776
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GP145
Abstract: MGF0915
Text: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION OUTLINE DRAWING Unit: The MGF0915A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power
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MGF0915A
MGF0915A
26dBm
GP145
MGF0915
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MGF0915A
Abstract: GP145 MGF0915 PQ-32/CTD-17765
Text: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0915A L & S BAND GaAs FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=36.5 dBm TYP. @ f=1.9GHz,Pin=23dBm
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MGF0915A
MGF0915A
23dBm
GP145
MGF0915
PQ-32/CTD-17765
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an 17830 A
Abstract: 4604 SMD 8 PIN RG-100-2 SEM 2006 0729 an 17830
Text: MITSUBISHI SEM ICON DUCTOR<GaAs FET> Preliminary MGF0915A L & S BAND G a As FET [ SMD non - matched ] DESCRIPTION The MGF0915A GaAs FET with an N-channel schtokky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=36.5 dBm TYP. @ f=1.9G Hz,Pin=23dBm
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MGF0915A
MGF0915A
23dBm
curren-167
an 17830 A
4604 SMD 8 PIN
RG-100-2
SEM 2006 0729
an 17830
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