Untitled
Abstract: No abstract text available
Text: 2N5114UB thru 2N5116UB Screening in reference to MIL-PRF-19500 available P-CHANNEL J-FET Available on commercial versions DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power
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Original
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2N5114UB
2N5116UB
MIL-PRF-19500
2N5114
2N5116
T4-LDS-0006-1,
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PDF
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2N3822 equivalent
Abstract: transistor 2N3823 2N3822 2N3823 2N3823 equivalent 2N3823 fet datasheet 2n3821 2N382 TO72 package n-channel jfet 2N3822 2n3821 fet
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL J-FET DEPLETION MODE
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Original
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MIL-PRF-19500/375
2N3821
2N3822
2N3823
2N3821UB
2N3822UB
2N3823UB
2N3821,
2N3822,
2N3823,
2N3822 equivalent
transistor 2N3823
2N3822
2N3823
2N3823 equivalent
2N3823 fet datasheet
2n3821
2N382
TO72 package n-channel jfet 2N3822
2n3821 fet
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PDF
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UC734
Abstract: KE4416 2N3821 2n5103 UC250 Solitron 2N4417
Text: field effect transistors 160 AMPLIFIERS VHF/UHF J FET/N-CHANNEL,SINGLE TYPE 2N3821 2N3822 2N3823 2N4223 2N4224 2N4416 2N4416A 2N4417 2N5103 2N5104 2N5105 KE4416 UC734 UC734E Vp C ,•• pf Volts Max. Max. *BVGSS Volts PA"CKAGE Min. IGSS nA Max. I DSS rnA
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Original
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2N3821
2N3822
2N3823
2N4223
2N4224
2N4416
2N4416A
2N4417
2N5103
2N5104
UC734
KE4416
UC250
Solitron 2N4417
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N5114UB thru 2N5116UB Screening in reference to MIL-PRF-19500 available P-CHANNEL J-FET Available on commercial versions DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power
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Original
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2N5114UB
2N5116UB
MIL-PRF-19500
2N5114
2N5116
T4-LDS-0006-1,
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PDF
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2N3823
Abstract: 2N3821UB
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL J-FET DEPLETION MODE
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Original
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MIL-PRF-19500/375
2N3821
2N3822
2N3823
2N3821UB
2N3822UB
2N3823UB
2N3821,
2N3822,
2N3823,
2N3823
2N3821UB
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N5114UB thru 2N5116UB Screening in reference to MIL-PRF-19500 available P-CHANNEL J-FET Available on commercial versions DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power
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Original
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2N5114UB
2N5116UB
MIL-PRF-19500
2N5114
2N5116
MIL-PRF-19500
gr108
T4-LDS-0006-1,
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PDF
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064R
Abstract: D2084UK power amplifier s band 3 ghz 100w
Text: D2084UK.01 MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 1GHz PUSH–PULL E (4 pls) F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N O M J K • SUITABLE FOR BROAD BAND APPLICATIONS
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Original
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D2084UK
064R
power amplifier s band 3 ghz 100w
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PDF
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sc1142
Abstract: IR7811 SC1142CSW surface mount A106 diode SC1142-1205 diode b81 a113 FET SANYO 1000uF 16V CA B20 bridge rectifier B40 B2 RECTIFIER
Text: HIGH SPEED SYNCHRONOUS POWER MOSFET DRIVER PRELIMINARY - December 7, 1999 SC1205 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SC1205 is a cost effective Dual MOSFET Driver designed for switching High and Low side Power
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Original
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SC1205
SC1205
3000pF
MS-012AA
ECN99-742
sc1142
IR7811
SC1142CSW
surface mount A106 diode
SC1142-1205
diode b81
a113 FET
SANYO 1000uF 16V CA
B20 bridge rectifier
B40 B2 RECTIFIER
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PDF
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lv 5682
Abstract: mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 RD60HUF1 MOSFET, 3077 transistor k 2837
Text: ATTENTION OBSERVE PRECAUTIONS 1'OR HANDLING Revision date: J 2th/M ar.;02 MITSUBISHI RF POW ER MOS FET h le x ro s ta tic SENSITIVE DEVÏCES RD60HUF1 Silicon MOSFET Power Transistor, 520M Hz 60W DESCRIPTION OUTLINE DRAW ING RD60HUF1 is a MOS FET type transistor specifically
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OCR Scan
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RD60HUF1
RD60HUF1
lv 5682
mar 835 mosfet
MAS 560 ag
TRANSISTOR D 5702
MOSFET, 3077
transistor k 2837
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PDF
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transistor rf m 9860
Abstract: equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490
Text: -. MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING «ion date: I S ' V N o v . ’M ELETROSTATIC SENSITIVE DEVICES , O H X J F X Silicon MOSFET Power Transistor,520MHz 30W DESCRIPTION O U T L IN E D R A W IN G RD30HUF1 is a MOS FET type transistor specifically designed for
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OCR Scan
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520MHz
RD30HUF1
520MHz
25deg
Jun008
RD30HUF1
transistor rf m 9860
equivalent transistor c 4793
mosfet 4459
C 5763 transistor
transistor c 4793
transistor 5763
transistor 17556
17556 transistor
17853 mosfet
IC 4490
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PDF
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BB3583AM
Abstract: No abstract text available
Text: j j t v . »v» u s h p . i » > . » i ‘~;' 4 - ' T ' » | PA83 • PA83A APEX MICROTECHNOLOGY CORPORATION « APPLICATIONS HOTLINE 8 0 0 546-AP EX 8 0 0 -5 4 6 -2 7 3 9 FEATURES • • • • • LOW BIAS CURRENT, LOW NOISE — FET Input PROTECTED OUTPUT — Thermal Shutoff
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OCR Scan
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PA83A
546-APEX
BB3583AM/JM
BB3583AM
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PDF
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Untitled
Abstract: No abstract text available
Text: GaAs FET MMIC Products Capability Guide CUSTOM MMIC PRODUCTS — MA4GM400 SERIES DIGITAL STEP ATTENUATORS SWITCHED ELEMENT 0.3 MHz TO 2.0 GHz SWITCHED LINE PHASE SHIFTERS (500 MHz — 2.0 GHz) 1 o— CAN BE SUPPLIED WITH CMOS DRIVERS - o J, ?i ? i i i i
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OCR Scan
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MA4GM400
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PDF
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AD523
Abstract: AD523L AD523K "ultra low Current to Voltage Converter" electrometer AD523J
Text: PRODUCT DESCRIPTION The Analog Devices A D 523J, A D 523K , and A D 523 L are the first 1C J-FET operational amplifiers to provide sub-picoampere bias current performance comparable to that of discrete component modular products and an order of magnitude improvement over
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OCR Scan
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AD523J,
AD523K
AD523L
AD523J.
AD523
AD523K
"ultra low Current to Voltage Converter"
electrometer
AD523J
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PDF
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Untitled
Abstract: No abstract text available
Text: EXAR CORP TI 3422618 D E | 3M2Eblfi □ □QM7L.7 S 91D 04767 EXAR CORP XR-U100 Master-Chip Itanslstors Total Components: 577 NPN, small: 94 NPN, 100 mA: 2 J-FET P-channel : 4 PNP, dual collector: 40 PNP, med. vertical: 2 PNP, vertical: 8 Implant Resistors
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OCR Scan
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XR-U100
10kft:
20kft:
50kft:
900ft:
305kii
110x110
XR-1568/XR-1468C
XR-1468/1568
XR-1468/1568
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PDF
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3sk fet
Abstract: 3SK192 K305A 3sk268 fet 2SK1860 2SK A 1103 2sk to-92 SJ163 2sk type 3sk301
Text: FET, IGBT, IPD • Silicon Junction FETs Absolute Maximum Ratings Ta = 2 5 “C P ac k ag e (No.) Application SS-Mini Type (D1) General-use low frequency amplifier General-use S-Mini Type (D5) Mini Type (012) 2SJ364 2SK 1103 2 S J163 2SK662 2SK 2593 j 2SK663
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OCR Scan
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2SJ364
2SK123
2SK662
2SK663
2SK301
3sk fet
3SK192
K305A
3sk268 fet
2SK1860
2SK A 1103
2sk to-92
SJ163
2sk type
3sk301
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PDF
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MAX620cpn
Abstract: No abstract text available
Text: 19-4325, Rev 2; 10/94 y v i y j x i y u i Q uad, H ig h -S id e M O S F E T D riv e rs The MAX620/MAX621 are microprocessor compatible and feature undervoltage lockout capability This lockout feature inhibits the FET driver outputs until the high-side voltage reaches the proper level, as indicated by a
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OCR Scan
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MAX620/MAX621
5fl7bb51
GG1344S
MAX620cpn
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PDF
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cnc schematic
Abstract: 387-M 2sk mosfet
Text: 2 S K 1 3 8 7 -M S IP M O S F U J I P O W E R M O S -F E T IM-CHANNEL SILICON POWER MOS-FET F-III SERIES • Outline Drawings ■ Features • High current • L ow on-resistance • No secondary b reakd ow n • Low driving p o w e r • High fo rw ard T ran scon d u ctan ce
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OCR Scan
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2SK1387-M
SC-67
cnc schematic
387-M
2sk mosfet
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PDF
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sc1142
Abstract: diode zd c56 SCHEMATIC DIAGRAM POWER SUPPLY 12v 10A 620 TG On Semi SC1142CSW SC1205 sc1205 application circuit half-bridge sc1205 d-amp sanyo 1500uF 35v capacitor GRM235Y5V226Z010
Text: S^SEMTECH WA S' 4WMW PRELIMINARY - December 7, 1999 SC1205 HIGH SPEED SYNCHRONOUS POWER MOSFET DRIVER TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SC1205 is a cost effective Dual MOSFET Driver designed for switching High and Low side Power
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OCR Scan
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SC1205
TEL805-498-2111
SC1205
3000pF
12x16
ECN99-742
sc1142
diode zd c56
SCHEMATIC DIAGRAM POWER SUPPLY 12v 10A
620 TG On Semi
SC1142CSW
sc1205 application circuit half-bridge
sc1205 d-amp
sanyo 1500uF 35v capacitor
GRM235Y5V226Z010
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PDF
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IR7811
Abstract: 30BQ015 GRM235Y5V226Z010 SC1405 SC1405TS
Text: m *A SEMTECH Todby ’ b Results — .1 0 morrow s Visio August 31, 2000 SC1405 hig h s p e e d s y n c h r o n o u s p o w e r MOSFET SMART DRIVER TEL:805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com DESCRIPTION FEATURES The SC1405 is a Dual-MOSFET Driver with an internal
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OCR Scan
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SC1405
SC1405
3000pF
TSSOP-14
153AB1
ECN00-1259
IR7811
30BQ015
GRM235Y5V226Z010
SC1405TS
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PDF
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Untitled
Abstract: No abstract text available
Text: H S s E IV IT E C H Wa Today’sResults.tom orrow's Visio August 26, 1999 SC1405 high speed syn c h r o n o u s po w er MOSFET SMART DRIVER T E L805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com DESCRIPTION FEATURES The SC1405 is a Dual-MOSFET Driver with an internal
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OCR Scan
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SC1405
L805-498-2111
SC1405
3000pF
TSSOP-14
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PDF
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sc1142
Abstract: r14 diode ppy vy 5 fet C33C34 shottkey schematic diagram 3 phase ac drive high speed TTL in fet SC1405 SC1405B SC1405TS
Text: 3 E |W |T E C H JPy ^ December 16, 1999 HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER SC1405B TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SC1405B is a Dual-MOSFET Driver with an inter nal Overlap Protection Circuit to prevent shoot-through
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OCR Scan
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SC1405B
TEL805-498-2111
SC1405B
3000pF
TSSOP-14
M0-153AB1
ECN99-773
sc1142
r14 diode ppy
vy 5 fet
C33C34
shottkey
schematic diagram 3 phase ac drive
high speed TTL in fet
SC1405
SC1405TS
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:20th/Nov/02 ELETROSTATTC SENSITIVE DEVICES RD30HVF1 Silicon MOSFET Power Transistor,175MHz 30W DESCRIPTION OUTLINE DRAWING 22. 00 RD30HVF1 is a MOS FET type transistor specifically designed for
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OCR Scan
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/Nov/02
RD30HVF1
175MHz
RD30HVF1
l75MHz
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PDF
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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OCR Scan
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LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
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PDF
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e304 fet
Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that
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OCR Scan
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K28742
44449SILXHX
e304 fet
JFET TRANSISTOR REPLACEMENT GUIDE j201
bfq13
e420 dual jfet
JFET TIS88
Siliconix FET Design Catalog
E112 jfet
jfet e300
BFW10 JFET
2N3686
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PDF
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