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    FET J 305 Search Results

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    Untitled

    Abstract: No abstract text available
    Text: 2N5114UB thru 2N5116UB Screening in reference to MIL-PRF-19500 available P-CHANNEL J-FET Available on commercial versions DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power


    Original     		PDF 2N5114UB 2N5116UB MIL-PRF-19500 2N5114 2N5116 T4-LDS-0006-1,

    2N3822 equivalent

    Abstract: transistor 2N3823 2N3822 2N3823 2N3823 equivalent 2N3823 fet datasheet 2n3821 2N382 TO72 package n-channel jfet 2N3822 2n3821 fet
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL J-FET DEPLETION MODE


    Original     		PDF MIL-PRF-19500/375 2N3821 2N3822 2N3823 2N3821UB 2N3822UB 2N3823UB 2N3821, 2N3822, 2N3823, 2N3822 equivalent transistor 2N3823 2N3822 2N3823 2N3823 equivalent 2N3823 fet datasheet 2n3821 2N382 TO72 package n-channel jfet 2N3822 2n3821 fet

    UC734

    Abstract: KE4416 2N3821 2n5103 UC250 Solitron 2N4417
    Text: field effect transistors 160 AMPLIFIERS VHF/UHF J FET/N-CHANNEL,SINGLE TYPE 2N3821 2N3822 2N3823 2N4223 2N4224 2N4416 2N4416A 2N4417 2N5103 2N5104 2N5105 KE4416 UC734 UC734E Vp C ,•• pf Volts Max. Max. *BVGSS Volts PA"CKAGE Min. IGSS nA Max. I DSS rnA


    Original     		PDF 2N3821 2N3822 2N3823 2N4223 2N4224 2N4416 2N4416A 2N4417 2N5103 2N5104 UC734 KE4416 UC250 Solitron 2N4417

    Untitled

    Abstract: No abstract text available
    Text: 2N5114UB thru 2N5116UB Screening in reference to MIL-PRF-19500 available P-CHANNEL J-FET Available on commercial versions DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power


    Original     		PDF 2N5114UB 2N5116UB MIL-PRF-19500 2N5114 2N5116 T4-LDS-0006-1,

    2N3823

    Abstract: 2N3821UB
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL J-FET DEPLETION MODE


    Original     		PDF MIL-PRF-19500/375 2N3821 2N3822 2N3823 2N3821UB 2N3822UB 2N3823UB 2N3821, 2N3822, 2N3823, 2N3823 2N3821UB

    Untitled

    Abstract: No abstract text available
    Text: 2N5114UB thru 2N5116UB Screening in reference to MIL-PRF-19500 available P-CHANNEL J-FET Available on commercial versions DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power


    Original     		PDF 2N5114UB 2N5116UB MIL-PRF-19500 2N5114 2N5116 MIL-PRF-19500 gr108 T4-LDS-0006-1,

    064R

    Abstract: D2084UK power amplifier s band 3 ghz 100w
    Text: D2084UK.01 MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 1GHz PUSH–PULL E (4 pls) F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N O M J K • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		PDF D2084UK 064R power amplifier s band 3 ghz 100w

    sc1142

    Abstract: IR7811 SC1142CSW surface mount A106 diode SC1142-1205 diode b81 a113 FET SANYO 1000uF 16V CA B20 bridge rectifier B40 B2 RECTIFIER
    Text: HIGH SPEED SYNCHRONOUS POWER MOSFET DRIVER PRELIMINARY - December 7, 1999 SC1205 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SC1205 is a cost effective Dual MOSFET Driver designed for switching High and Low side Power


    Original     		PDF SC1205 SC1205 3000pF MS-012AA ECN99-742 sc1142 IR7811 SC1142CSW surface mount A106 diode SC1142-1205 diode b81 a113 FET SANYO 1000uF 16V CA B20 bridge rectifier B40 B2 RECTIFIER

    lv 5682

    Abstract: mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 RD60HUF1 MOSFET, 3077 transistor k 2837
    Text: ATTENTION OBSERVE PRECAUTIONS 1'OR HANDLING Revision date: J 2th/M ar.;02 MITSUBISHI RF POW ER MOS FET h le x ro s ta tic SENSITIVE DEVÏCES RD60HUF1 Silicon MOSFET Power Transistor, 520M Hz 60W DESCRIPTION OUTLINE DRAW ING RD60HUF1 is a MOS FET type transistor specifically


    OCR Scan     		PDF RD60HUF1 RD60HUF1 lv 5682 mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 MOSFET, 3077 transistor k 2837

    transistor rf m 9860

    Abstract: equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490
    Text: -. MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING «ion date: I S ' V N o v . ’M ELETROSTATIC SENSITIVE DEVICES , O H X J F X Silicon MOSFET Power Transistor,520MHz 30W DESCRIPTION O U T L IN E D R A W IN G RD30HUF1 is a MOS FET type transistor specifically designed for


    OCR Scan     		PDF 520MHz RD30HUF1 520MHz 25deg Jun008 RD30HUF1 transistor rf m 9860 equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490

    BB3583AM

    Abstract: No abstract text available
    Text: j j t v . »v» u s h p . i » > . » i ‘~;' 4 - ' T ' » | PA83 • PA83A APEX MICROTECHNOLOGY CORPORATION « APPLICATIONS HOTLINE 8 0 0 546-AP EX 8 0 0 -5 4 6 -2 7 3 9 FEATURES • • • • • LOW BIAS CURRENT, LOW NOISE — FET Input PROTECTED OUTPUT — Thermal Shutoff


    OCR Scan     		PDF PA83A 546-APEX BB3583AM/JM BB3583AM

    Untitled

    Abstract: No abstract text available
    Text: GaAs FET MMIC Products Capability Guide CUSTOM MMIC PRODUCTS — MA4GM400 SERIES DIGITAL STEP ATTENUATORS SWITCHED ELEMENT 0.3 MHz TO 2.0 GHz SWITCHED LINE PHASE SHIFTERS (500 MHz — 2.0 GHz) 1 o— CAN BE SUPPLIED WITH CMOS DRIVERS - o J, ?i ? i i i i


    OCR Scan     		PDF MA4GM400

    AD523

    Abstract: AD523L AD523K "ultra low Current to Voltage Converter" electrometer AD523J
    Text: PRODUCT DESCRIPTION The Analog Devices A D 523J, A D 523K , and A D 523 L are the first 1C J-FET operational amplifiers to provide sub-picoampere bias current performance comparable to that of discrete component modular products and an order of magnitude improvement over


    OCR Scan     		PDF AD523J, AD523K AD523L AD523J. AD523 AD523K "ultra low Current to Voltage Converter" electrometer AD523J

    Untitled

    Abstract: No abstract text available
    Text: EXAR CORP TI 3422618 D E | 3M2Eblfi □ □QM7L.7 S 91D 04767 EXAR CORP XR-U100 Master-Chip Itanslstors Total Components: 577 NPN, small: 94 NPN, 100 mA: 2 J-FET P-channel : 4 PNP, dual collector: 40 PNP, med. vertical: 2 PNP, vertical: 8 Implant Resistors


    OCR Scan     		PDF XR-U100 10kft: 20kft: 50kft: 900ft: 305kii 110x110 XR-1568/XR-1468C XR-1468/1568 XR-1468/1568

    3sk fet

    Abstract: 3SK192 K305A 3sk268 fet 2SK1860 2SK A 1103 2sk to-92 SJ163 2sk type 3sk301
    Text: FET, IGBT, IPD • Silicon Junction FETs Absolute Maximum Ratings Ta = 2 5 “C P ac k ag e (No.) Application SS-Mini Type (D1) General-use low frequency amplifier General-use S-Mini Type (D5) Mini Type (012) 2SJ364 2SK 1103 2 S J163 2SK662 2SK 2593 j 2SK663


    OCR Scan     		PDF 2SJ364 2SK123 2SK662 2SK663 2SK301 3sk fet 3SK192 K305A 3sk268 fet 2SK1860 2SK A 1103 2sk to-92 SJ163 2sk type 3sk301

    MAX620cpn

    Abstract: No abstract text available
    Text: 19-4325, Rev 2; 10/94 y v i y j x i y u i Q uad, H ig h -S id e M O S F E T D riv e rs The MAX620/MAX621 are microprocessor compatible and feature undervoltage lockout capability This lockout feature inhibits the FET driver outputs until the high-side voltage reaches the proper level, as indicated by a


    OCR Scan     		PDF MAX620/MAX621 5fl7bb51 GG1344S MAX620cpn

    cnc schematic

    Abstract: 387-M 2sk mosfet
    Text: 2 S K 1 3 8 7 -M S IP M O S F U J I P O W E R M O S -F E T IM-CHANNEL SILICON POWER MOS-FET F-III SERIES • Outline Drawings ■ Features • High current • L ow on-resistance • No secondary b reakd ow n • Low driving p o w e r • High fo rw ard T ran scon d u ctan ce


    OCR Scan     		PDF 2SK1387-M SC-67 cnc schematic 387-M 2sk mosfet

    sc1142

    Abstract: diode zd c56 SCHEMATIC DIAGRAM POWER SUPPLY 12v 10A 620 TG On Semi SC1142CSW SC1205 sc1205 application circuit half-bridge sc1205 d-amp sanyo 1500uF 35v capacitor GRM235Y5V226Z010
    Text: S^SEMTECH WA S' 4WMW PRELIMINARY - December 7, 1999 SC1205 HIGH SPEED SYNCHRONOUS POWER MOSFET DRIVER TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SC1205 is a cost effective Dual MOSFET Driver designed for switching High and Low side Power


    OCR Scan     		PDF SC1205 TEL805-498-2111 SC1205 3000pF 12x16 ECN99-742 sc1142 diode zd c56 SCHEMATIC DIAGRAM POWER SUPPLY 12v 10A 620 TG On Semi SC1142CSW sc1205 application circuit half-bridge sc1205 d-amp sanyo 1500uF 35v capacitor GRM235Y5V226Z010

    IR7811

    Abstract: 30BQ015 GRM235Y5V226Z010 SC1405 SC1405TS
    Text: m *A SEMTECH Todby ’ b Results — .1 0 morrow s Visio August 31, 2000 SC1405 hig h s p e e d s y n c h r o n o u s p o w e r MOSFET SMART DRIVER TEL:805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com DESCRIPTION FEATURES The SC1405 is a Dual-MOSFET Driver with an internal


    OCR Scan     		PDF SC1405 SC1405 3000pF TSSOP-14 153AB1 ECN00-1259 IR7811 30BQ015 GRM235Y5V226Z010 SC1405TS

    Untitled

    Abstract: No abstract text available
    Text: H S s E IV IT E C H Wa Today’sResults.tom orrow's Visio August 26, 1999 SC1405 high speed syn c h r o n o u s po w er MOSFET SMART DRIVER T E L805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com DESCRIPTION FEATURES The SC1405 is a Dual-MOSFET Driver with an internal


    OCR Scan     		PDF SC1405 L805-498-2111 SC1405 3000pF TSSOP-14

    sc1142

    Abstract: r14 diode ppy vy 5 fet C33C34 shottkey schematic diagram 3 phase ac drive high speed TTL in fet SC1405 SC1405B SC1405TS
    Text: 3 E |W |T E C H JPy ^ December 16, 1999 HIGH SPEED SYNCHRONOUS POWER MOSFET SMART DRIVER SC1405B TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES The SC1405B is a Dual-MOSFET Driver with an inter­ nal Overlap Protection Circuit to prevent shoot-through


    OCR Scan     		PDF SC1405B TEL805-498-2111 SC1405B 3000pF TSSOP-14 M0-153AB1 ECN99-773 sc1142 r14 diode ppy vy 5 fet C33C34 shottkey schematic diagram 3 phase ac drive high speed TTL in fet SC1405 SC1405TS

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING Revision date:20th/Nov/02 ELETROSTATTC SENSITIVE DEVICES RD30HVF1 Silicon MOSFET Power Transistor,175MHz 30W DESCRIPTION OUTLINE DRAWING 22. 00 RD30HVF1 is a MOS FET type transistor specifically designed for


    OCR Scan     		PDF /Nov/02 RD30HVF1 175MHz RD30HVF1 l75MHz

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    e304 fet

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686
    Text: January 1986 Small-Signal FET Data Book Slliconix incorporated reserves the right to make changes in the circuitry or specifications at any time without notice and assumes no responsibility for the use of any circuits described herein and makes no representations that


    OCR Scan     		PDF K28742 44449SILXHX e304 fet JFET TRANSISTOR REPLACEMENT GUIDE j201 bfq13 e420 dual jfet JFET TIS88 Siliconix FET Design Catalog E112 jfet jfet e300 BFW10 JFET 2N3686