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    F100MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    A4H1

    Abstract: HD6417750RBG240 264-PIN BSC COMPUTER SCIENCE digital logic design Notes Transistor mcr 22-8 413 REJ10B0210-0400 A5H1 zo 607 HD6417750RBP240V Tag 225 600 replacement
    Text: REJ09B0366-0700 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. SH7750, SH7750S, SH7750R Group 32


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    REJ09B0366-0700 SH7750, SH7750S, SH7750R 32-Bit Family/SH7750 A4H1 HD6417750RBG240 264-PIN BSC COMPUTER SCIENCE digital logic design Notes Transistor mcr 22-8 413 REJ10B0210-0400 A5H1 zo 607 HD6417750RBP240V Tag 225 600 replacement PDF

    DSA-001

    Abstract: hitachi HD6417750BP200 822 1334 Hitachi DSA002753
    Text: SuperH SH 32-Bit RISC MCU/MPU Series SH7750 High-Performance RISC Engine Hardware Manual ADE-602-124B Rev. 3.0 09/20/99 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in


    Original
    32-Bit SH7750 ADE-602-124B SH7750 200MHz 167MHz HD6417750BP200 HD6417750F167 HD6417750F167I 128MHz DSA-001 hitachi HD6417750BP200 822 1334 Hitachi DSA002753 PDF

    HD6417750SF167V

    Abstract: BSC COMPUTER SCIENCE visual basic Notes HXXXXX hudi D63D48 SZ100 DBL 1035 Nippon capacitors SCHEMATIC ATI graphics card HD6417750BP200M
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    SH7750, SH7750S, SH7750R REJ09B0366-0700 HD6417750SF167V BSC COMPUTER SCIENCE visual basic Notes HXXXXX hudi D63D48 SZ100 DBL 1035 Nippon capacitors SCHEMATIC ATI graphics card HD6417750BP200M PDF

    1k eprom

    Abstract: Hitachi DSA002732
    Text: Hitachi SuperH RISC engine SH7750 Series SH7750, SH7750S Hardware Manual ADE-602-124C Rev. 4.0 4/21/00 Hitachi, Ltd. Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in


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    SH7750 SH7750, SH7750S ADE-602-124C SH7751 TN-SH7-247A/E SH7750S HD6417750 1k eprom Hitachi DSA002732 PDF

    Untitled

    Abstract: No abstract text available
    Text: One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 KSC1674 NPN EPITAXIAL SILICON TRANSISTOR inir"D \mrLlrltn, TV PIF AMPLIFIER, FM TUNER RF/Ml/ini MIXER, OSCILLATOR 1 TO-92 • High Current-Qain-Bandwidth Product fT=6QOMHz (Typ)


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    KSC1674 100MHz 10fiA, f-100MHz Rs-50n, PDF

    MPSA63

    Abstract: MPSA63 equivalent 100C100B mps-a63 C10AA MPSA62 mpsa64
    Text: TOSHIBA TRANSISTOR MPSA62, 63, 64 SILICON PNP EPITAXIAL TYPE PCT PROCESS DESIGNED FOR PRE-AMPLIFIER INPUT APPLICATIONS REQUIRING HIGH INPUT IMPEDANCE. FEATURES : • High DC Current Gain I I C-10«A : hFE- 5000(Min.) MPSA63 10000(Min.) MPSA64 20000(Min.) MPSA62


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    MPSA62, MPSA63 MPSA64 MPSA62 BVCES-30V C-100 MPSA63. MPSA64 MPSA63 equivalent 100C100B mps-a63 C10AA MPSA62 PDF

    YTS2222A

    Abstract: transistor marking 1p Z
    Text: ¡ TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS y t ä m m II YTSZZZZA FOR GENERAL PUROSE USE Unit in mm MEDIUM-SPEED SWITCHING AND AUDIO TO VHF FREQUENCY APPLICATION FEATURES: . DC Current Gain Specified : 0.1— 500mA . Low Collector-Emitter Saturation Voltage


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    500mA YTS2222A 300MHz YTS2907A. 500mA, Ta-25 150mA, YTS2222A transistor marking 1p Z PDF

    YTS4401

    Abstract: MARKING e1v
    Text: SILICON NPN EPITAXIAL TYPE YTS4401 FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES : • Low Leakage Current : Ic]jv=100nA Max. , Iggy=-100nA (Max.) @ VCE=35V, V b e =-0.4V • Excellent DC Current Gain Linearity • Low Saturation Voltage


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    YTS4401 100nA -100nA 150mA, YTS4403 500mA, f-100MHz YTS4401 MARKING e1v PDF

    Untitled

    Abstract: No abstract text available
    Text: M i- 2N2222A GENERAL PURPOSE NPN TRANSISTOR 61096 OPTOELECTRONIC PRODUCTS DIVISION Features • • • • 0 210 5 33 , 0 170(4 32) [' TO -18 style package Rugged package - able to withstand high acceleration load Hermetically sealed MIL-S-19500 screening available


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    2N2222A MIL-S-19500 2N2222A f-100MHz 100kHz 150mA, 300ns, PDF

    2SJ83

    Abstract: 2SK238 2SJ82 2SK241 2SK240 2SK203 2SK220 2S119 2SK197 2SK198
    Text: - 38 - * . 1 fr K ft f M € tí: € 2SK197 B ÍL B ÍL 2SK198 tñ“ F 2 SK196 H 2SK199 2SK201 NEC 2SK203 NEC 2SK208 m m m £ 4 -k % Vg s * X V* m (V) * (V) 800m 2m 120 0.2 -2 10 10m G 150m -lOn -0.5 2m 14m 10 -0.3 -4 10 LF A J N D -30 GDO 10m G 150m


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    2SK19600 2SK197 2SK198 2SK199 2SK201 2SK217 2SK218 2SK220 2SK221 2SS222 2SJ83 2SK238 2SJ82 2SK241 2SK240 2SK203 2S119 PDF

    2SK520

    Abstract: 2SK523 2SK508 2SK537 2sk515 2SK511 2SK514 2SK518 2SK519 2sk43
    Text: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m . (V) «• m të P d /P c h * * (A) * * (W) Ig s s (max) (A) Vg s (V) ^ W (Ta=25°C) te (min) (max) Vd s (V) (V) (V) (min) (max) Vd s (A) (A) (V) Id (A) Q (min) (S) 1 I >>60 B -— ' ü Vd s (V) Id


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    2SJ299 2SJ300 2SJ317 2SK11 2SK12 2SK521 100MHZ 2SK522 20mVmax 2SK523 2SK520 2SK523 2SK508 2SK537 2sk515 2SK511 2SK514 2SK518 2SK519 2sk43 PDF

    Untitled

    Abstract: No abstract text available
    Text: PJ2N3904 NPN Epitaxial Silicon Transistor GENERAL PURPOSE TRANSISTOR • • Collector-Emitter Voltage: VCe o = 40V Collector Dissipation: Pc max = 625 mW TO-92 SOT-23 B ABSOLUTE M AXIM U M RATINGS (Ta = 25 C) Symbol Rating Unit Collector-Base Voltage VCBO


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    PJ2N3904 OT-23 Cut-off70 PDF

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTOR FMMT5179 ISSU E 3 - JANUARY 1996 FEATURES * High fT=900M H z M in * M a x capacitance=1pF * Low noise 4.5dB m i P A R T M A R K IN G D ET A IL -1 7 9 SOT23 ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L


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    FMMT5179 -10mA, f-100MHz 200MHz 200MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: SM-8 COMPLEMENTARY M EDIUM POWER HIGH GAIN TRANSISTORS ZDT6718 ISSUE 1 - NOVEMBER 1995 - ci c r _U Bi Ct C L =□ Ei NPN C» 1 1 ZD b2 c2 l 1 ZO e2 pnp PARTMARKING DETAIL- T6718 ABSOLUTE MAXIMUM RATINGS. PARAMETER SY M B O L NPN


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    ZDT6718 T6718 -10mA, -50mA, 100MHz FMMT718 PDF

    transistor C 245 b

    Abstract: ZTX1053A
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1053A ISSU E 2 - JANUARY 1995_ — — — — — — — - ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L Collector-Base Voltage ZT X 1 05 3A U N IT v CBO 150 V Coliector-Emitter Voltage


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    ZTX1053A ZTX1053A 100mA* lc-10mA, IC-10A, lc-50mA, f-100MHi transistor C 245 b PDF

    Untitled

    Abstract: No abstract text available
    Text: 45E D • ^ 0 ^ 7 2 5 0 DDlVflbl 2 TOSHIBA TRANSISTOR T0S4 - MPS2907A SILICON PNP EPITAXIAL TYPE PCT PROCESS TO SHIBA (DISCRETE/OPTO) FOR HIGH SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND COMPLEMENTARY CIRCUTRY. FEATURES : . High DC Current Gain Specified : -0.1- 500mA


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    MPS2907A 500mA Ic--50mA, fT-200MHz MPS2222A. Ta-25 IB30V, -150mA -15mA PDF

    transistor marking MK

    Abstract: YTS2222
    Text: TOSHIBA TRANSISTOR YTS2907 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR HIGH-SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND COMPLEMENTARY CIRCUITRY FEATURES: . High DC Current Gain Specified : -0.1~ -500mA . High Transition Frequency : @ Ic— 50mA, fx*200MHz(Min.)


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    YTS2907 -500mA 200MHz YTS2222 -500mA, -50mA Ta-258C) -10/iA, -10mA, 10/iA, transistor marking MK YTS2222 PDF

    BC8468

    Abstract: BC347C BCS46A pnp 400V BC347 BCS48 BC8508 BCS46B BC347A BC349
    Text: BC846A/B-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C 1 General Purpose Transistor P N P Silicon "M oisture Sen sitivity Level M A R K IN G M A R R A M n X X - Drvfc» Codt See 1.M * H rlow > SOT-23 1 •U * E S D Rating • Hum an B o d y M odel:> 4000V D M ach in e Model: >4-00V


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    BCK46AVB-BC847A/B/C BC848A/B/C-BC849B/C BC850B/C BC846 BC847, BC850 BC848, BC849 BC8468 BC347C BCS46A pnp 400V BC347 BCS48 BC8508 BCS46B BC347A BC349 PDF

    2SK30

    Abstract: 2sK30 fet 2SK19TM 2SK34 FET 2SK23A 2SK44SP 2sk43 3A 2SK30 2SK37 2SK33
    Text: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m . * * (V) «• m të P d /P c h (A) * * (W) Ig s s (max) (A) Vg s (V) ^ te W (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (max) V d s (V) (A) (A) Id (A) Q (min) (S) 1 I >>60 B -—' ü Vd s (V) Id


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    2SJ299 2SJ300 2SJ317 2SK11 2SK12 10DGS, 2SK41NP 2SK25 2SK30ATM 2SK30 2SK30 2sK30 fet 2SK19TM 2SK34 FET 2SK23A 2SK44SP 2sk43 3A 2SK30 2SK37 2SK33 PDF

    Untitled

    Abstract: No abstract text available
    Text: - fe /Ë • a II • M I 3 O 1 H » : ^ « a í t a ^ o i s s d r IB E # @ S S íí, í 'l l o m f f î i S M î i X ' t -, f- y *- pin K E9. • Ml 3 0 3 t o : # w y ÿ'fflo (p in y 4 % — k ) EM • Ml 3 0 8 : S a ® 1 8 8 l® a i$ fflT (PIN •M I 4 O 2


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    470MHz 100MHz PDF

    ZTX552

    Abstract: ZTX550 ZTX551 ZTX553 TMB-250
    Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX550 ZTX551 ISSUE 1 - MARCH 94_ FEATURES * 60 Volt VCE0 * 1 Amp continuous current * Pi0,= 1Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


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    60VoltVCEO ZTX550 ZTX551 ZTX550 ZTX551 -100nA -10mA 100pi ZTX552 ZTX553 TMB-250 PDF

    ZTX214C

    Abstract: T092 ZTX300
    Text: NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ISSU E 2 - MARCH 94_ FEATURES * 15 Volt V,CEO fT=500 M H z ABSOLUTE M A X IM U M RATINGS. SY M B O L PARAMETER Coliector-Base Voltage VALUE V CBO 40 Collector-Emitter Voltage


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    lc-10mA, -10mA, -100mA, f-100MHz U-200MA 200Hz, 15KHz ZTX214C T092 ZTX300 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1055A ISSUE 3 -JANUARY 1995_ — FEATURES * * * * - V ceo=120V 3 A m p continuous Current 6 A m p pulse Current Very Low Saturation Voltage APPLICATIONS *


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    ZTX1055A NY11725 3510Metroplaza, PDF

    P1y transistor

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 3 -JANUARY 1995_ ' - ZTX1056A FEATURES * V c e o =1 6 0 V * 3 A m p C o n t in u o u s Current * 6 A m p P u lse Current * L o w Sa tu ra tio n V olta ge ABSOLUTE MAXIM UM RATINGS.


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    ZTX1056A P1y transistor PDF