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    2SK34 Price and Stock

    Rochester Electronics LLC

    Rochester Electronics LLC 2SK3404-Z-E1-AZ

    POWER FIELD-EFFECT TRANSISTOR
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    DigiKey 2SK3404-Z-E1-AZ Bulk 31,368 168
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    Rochester Electronics LLC 2SK3402-ZK-E1-AY

    2SK3402-ZK-E1-AY - SWITCHING N-C
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    DigiKey 2SK3402-ZK-E1-AY Bulk 17,500 217
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    Rochester Electronics LLC 2SK3447TZ-E

    2SK3447TZ-E - SILICON N CHANNEL
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    DigiKey 2SK3447TZ-E Bulk 10,000 728
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    Rochester Electronics LLC 2SK3483-AZ

    2SK3483-AZ - SWITCHING N-CHANNEL
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    DigiKey 2SK3483-AZ Bulk 3,077 207
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    Rochester Electronics LLC 2SK3402-AZ

    2SK3402-AZ - SWITCHING N-CHANNEL
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    DigiKey 2SK3402-AZ Bulk 2,119 217
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    Find more 2SK34 price and stock on Findchips.com

    2SK34 Datasheets (311)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    2SK34 Mitsubishi Scan PDF
    2SK34 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SK34 Unknown FET Data Book Scan PDF
    2SK34 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SK34 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SK34 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK34 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SK34 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    2SK34 Unknown Cross Reference Datasheet Scan PDF
    2SK34 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SK34 Semico N-Channel Junction Field Effect Transistors Scan PDF
    2SK3402 Kexin N-Channel MOSFET Original PDF
    2SK3402 NEC MOS Field Effect Transistor Original PDF
    2SK3402 NEC Switching N-Channel Power MOS FET Industrial Use Original PDF
    2SK3402 TY Semiconductor N-Channel MOSFET - TO-252 Original PDF
    2SK3402(0)-Z-E1-AZ Renesas Electronics America Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANSISTOR Original PDF
    2SK3402-Z NEC Nch power MOS FET Original PDF
    2SK3403 Toshiba power MOSFET Original PDF
    2SK3403 Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF
    2SK3403(Q) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 450V 13A TO220FL Original PDF
    ...

    2SK34 Datasheets Context Search

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    Type
    Document Tags
    PDF

    K3407

    Abstract: No abstract text available
    Text: 2SK3407 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3407 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.5 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		2SK3407 K3407 PDF

    2SK3467

    Abstract: No abstract text available
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3467 TO-263 +0.1 1.27-0.1 Features 4.5 V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 55 nC TYP. ID = 80 A, VDD = 16 V, VGS = 10 V Built-in gate protection diode


    Original     		2SK3467 O-263 2SK3467 PDF

    2SJ102

    Abstract: K346 K3465 2SK345 2SJ101 2SK346 K346 fet
    Text: H IT A C H I ! /-co PT O E L E C T R O N I C S } 7 3 D — -^ W 2 T T 5 ^ m rra U H I / OP'IO LLhCTRUNlUü; e 73C J ^ H L E D S m 10017 a D 2SK345,2SK346 S ILIC O N N -C H A N N E L M O S FET HIGH SPEED POWER SW ITCHING. LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SJ101, 2SJ102


    OCR Scan     		2SJ101, 2SJ102 2SK345 2SK346 44Tfc DQ1D011 -2SK345, 2SK346 2SJ102 K346 K3465 2SJ101 K346 fet PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3476 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3476 VHF- and UHF-band Amplifier Applications Unit: mm Note The TOSHIBA products listed in this document are intended for high frequency Power Amplifier of telecommunications equipment.These


    Original     		2SK3476 PDF

    SMD 20A

    Abstract: 2SK3404
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3404 TO-263 +0.1 1.27-0.1 Features 4.5-V drive available Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 0.1max +0.1 1.27-0.1 +0.2 5.28-0.2 QG = 25 nC TYP. ID = 40 A, VDD = 24 V, VGS = 10 V Built-in gate protection diode


    Original     		2SK3404 O-263 SMD 20A 2SK3404 PDF

    smd transistor 6-100

    Abstract: 2SK3431
    Text: MOSFET SMD Type MOS Field Effect Transistor 2SK3431 +0.1 1.27-0.1 TO-263 MAX. VGS = 10 V, ID = 42 A RDS(on)2 = 8.9 m MAX. (VGS = 4 V, ID = 42 A) +0.2 4.57-0.2 5.60 RDS(on)1 = 5.6m +0.2 8.7-0.2 Super low on-state resistance: +0.1 1.27-0.1 +0.2 15.25-0.2 Features


    Original     		2SK3431 O-263 smd transistor 6-100 2SK3431 PDF

    2SK3438

    Abstract: No abstract text available
    Text: 2SK3438 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSV 2SK3438 ○ DC-DC コンバータ用 ○ スイッチングレギュレータ用 単位: mm • オン抵抗が低い。 • 順方向伝達アドミタンスが高い。 : |Yfs| = 4.5 S (標準)


    Original     		2SK3438 2SK3438 PDF

    2SK3453

    Abstract: No abstract text available
    Text: 2SK3453 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSIV 2SK3453 ○ スイッチングレギュレータ用 • 単位: mm : RDS (ON) = 0.72 Ω (標準) オン抵抗が低い。 • 順方向伝達アドミタンスが高い。: |Yfs| = 7.0 S (標準)


    Original     		2SK3453 2-16F1B 2SK3453 PDF

    2SK3404

    Abstract: 2SK3404-Z MP-25 MP-25Z M2SK3404
    Text: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor 2SK3404 N チャネル パワーMOS FET スイッチング用 工業用 2SK3404 は，N チャネル MOS FET でオン抵抗が低く，スイッチング特性が優れており，同期整流方式 DC/DC コンバー


    Original     		2SK3404 2SK3404 O-220AB 2SK3404-Z O-220SMD D14638JJ2V0DS00 D14638JJ2V0DS 2SK3404-Z MP-25 MP-25Z M2SK3404 PDF

    2SK3444

    Abstract: K3444
    Text: 2SK3444 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3444 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 65 mΩ (typ.) • High forward transfer admittance: |Yfs| = 10 S (typ.)


    Original     		2SK3444 2SK3444 K3444 PDF

    K3473

    Abstract: TOSHIBA K3473 transistor k3473 toshiba transistor k3473 K347 2SK3473 SC-65
    Text: 2SK3473 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSIV 2SK3473 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.3Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 720 V)


    Original     		2SK3473 K3473 TOSHIBA K3473 transistor k3473 toshiba transistor k3473 K347 2SK3473 SC-65 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SK3444 T O S H IB A TOSHIBA FSELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE { *-M Q S V 2S K3444 TENTATIVE IN D U S T R IA L HIGH SPEGO SWITCHING APPLICATIONS A P P L IC A T IO N S _UNIT : rrm CHOPPER REGULATION DC-DC CONVERTER AND MOTOR DRIVE APPLICATI OHS


    OCR Scan     		2SK3444 K3444 25flC PDF

    RL76

    Abstract: 2SK3485 2SK34
    Text: 2SK3485 Ordering number : EN7180A 2SK3485 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage


    Original     		2SK3485 EN7180A PW10s, 250mm20 RL76 2SK3485 2SK34 PDF

    k3472

    Abstract: 2SK3472
    Text: 2SK3472 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSV 2SK3472 Switching Regulator Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 4.0 mΩ (typ.) • High forward transfer admittance: |Yfs| = 0.8 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 450 V)


    Original     		2SK3472 k3472 2SK3472 PDF

    M2SK3424

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3424 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE • DESCRIPTION ORDERING INFORMATION The 2SK3424 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as


    Original     		2SK3424 2SK3424 O-220AB 2SK3424-ZK O-263 MP-25ZK) 2SK3424-ZJ MP-25ZJ) M2SK3424 PDF

    2SK3404 equivalent

    Abstract: 2SK3404 2SK3404-ZK 2SK3404-ZJ MP-25
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3404 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3404 is N-Channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as


    Original     		2SK3404 2SK3404 O-220AB 2SK3404-ZK O-263 MP-25ZK) 2SK3404-ZJ MP-25ZJ) 2SK3404 equivalent 2SK3404-ZK 2SK3404-ZJ MP-25 PDF

    MP-25

    Abstract: MP-25Z 2SK3431 2SK3431-S 2SK3431-Z 2SK3431-ZJ
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3431 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3431 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3431 TO-220AB 2SK3431-S


    Original     		2SK3431 2SK3431 O-220AB 2SK3431-S O-262 2SK3431-ZJ O-263 2SK3431-Z O-220SMDNote MP-25 MP-25Z 2SK3431-S 2SK3431-Z 2SK3431-ZJ PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN7180 2SK3485 N-Channel Silicon MOSFET 2SK3485 Ultrahigh-Speed Switching Applications Preliminary Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2062A [2SK3485] 4.5 1.6 0.4 1.0


    Original     		ENN7180 2SK3485 2SK3485] 25max PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3454 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION The 2SK3454 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, PART NUMBER


    Original     		2SK3454 2SK3454 O-220 O-220 PDF

    2sk3469

    Abstract: 2SK3469-01MR *k3469
    Text: 2SK3469-01MR Super FAP-G Series FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply


    Original     		2SK3469-01MR MOSFET200303 O-220F 2sk3469 2SK3469-01MR *k3469 PDF

    D1459

    Abstract: 2sk3430 equivalent 2SK3430-Z 2SK3430 2SK3430-S MP-25 MP-25Z in 3003 TRANSISTOR
    Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3430 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3430 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3430 TO-220AB 2SK3430-S TO-262 2SK3430-Z


    Original     		2SK3430 2SK3430 O-220AB 2SK3430-S O-262 2SK3430-Z O-220SMD O-220AB) D1459 2sk3430 equivalent 2SK3430-Z 2SK3430-S MP-25 MP-25Z in 3003 TRANSISTOR PDF

    MOSFET TOSHIBA 2015

    Abstract: No abstract text available
    Text: TOSHIBA Discrete Devices RF Power MOSFET 2SK3476 Application Note Contens Contens ・・Bias Bias Current Current // DC DC Characteristics Characteristics Vds Vds = 4.8V, 4.8V, 6.0V, 6.0V, 7.2V, 7.2V, 8.4V, 8.4V, 9.6V 9.6V Vgs = 0.5V ~ 2.2V 0.05V Step


    Original     		2SK3476 100mA, 300mA, 500mA, 700mA, 900mA MOSFET TOSHIBA 2015 PDF

    k3491

    Abstract: K349 2SK3491 2SK349
    Text: Ordering number : ENN6959 2SK3491 N-Channel Silicon MOSFET 2SK3491 Ultrahigh-Speed Switching Applications Features Low ON-resistance. Low Qg. unit : mm 2083B [2SK3491] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 1 : Gate 2 : Drain 3 : Source


    Original     		ENN6959 2SK3491 2083B 2SK3491] 2092B k3491 K349 2SK3491 2SK349 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering num ber : ENN6970~j N-Channel Silicon MOSFET 2SK3495 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. u n it : mm • Ullrahigh-speed switching. 2087A • 4V drive. [2SK3495] • Meets radial taping. 2.5 1. 4 5 ,


    OCR Scan     		ENN6970 2SK3495 2SK3495] PDF