Eudyna Devices
Abstract: fmm106
Text: FMM1061VJ GaAs MMIC FEATURES • Operation to 6.0 GHz • Input Frequency divide by 4, OUT and OUT • -5V or+5V DC Single Power Supply • External 50 ohm Load Driving Capability • Small 10 pin Hermetic SMT-10 Package (VJ) • Tape and Reel available
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FMM1061VJ
SMT-10
FMM1061VJ
Eudyna Devices
fmm106
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EUDYNA
Abstract: No abstract text available
Text: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the
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FLU17XM
FLU17XM
EUDYNA
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FLU35XM
Abstract: Eudyna Devices
Text: FLU35XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=35.5dBm Typ. • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU35XM is a GaAs FET designed for base station applications in the
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FLU35XM
FLU35XM
V4888
Eudyna Devices
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"Frequency Divider"
Abstract: FMM1103VJ Eudyna Devices
Text: FMM1103VJ GaAs Microwave Frequency Divider FEATURES • Operation to 12.0 GHz • Input Frequency divide by 8, OUT and OUT • -5V or+5V DC Single Power Supply • External 50 ohm Load Driving Capability • Small 10 pin Hermetic SMT-10 Package (VJ) • Tape and Reel available
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FMM1103VJ
SMT-10
FMM1103VJ
Voltag4888
"Frequency Divider"
Eudyna Devices
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FLU10XM
Abstract: No abstract text available
Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the
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FLU10XM
FLU10XM
V4888
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FLU17XM
Abstract: No abstract text available
Text: FLU17XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=32.5dBm Typ. • High Gain: G1dB=13.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU17XM is a GaAs FET designed for base station applications in the
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FLU17XM
FLU17XM
V4888
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Untitled
Abstract: No abstract text available
Text: FLU35XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=35.5dBm Typ. • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU35XM is a GaAs FET designed for base station applications in the
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FLU35XM
FLU35XM
Gate-Sour88
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Untitled
Abstract: No abstract text available
Text: FLU10XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=29.5dBm Typ. • High Gain: G1dB=14.5dB (Typ.) • High PAE: ηadd=47% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in the
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FLU10XM
FLU10XM
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FHX76LP
Abstract: No abstract text available
Text: FHX76LP Super Low Noise HEMT FEATURES • Low Noise Figure: NF=0.40dB Typ. @f=12GHz • High Associated Gain: Gas=13.5dB (Typ.)@f=12GHz • High Reliability • Small Size SMT Package • Tape and Reel Packaging Available DESCRIPTION TM The FHX76LP is a low noise SuperHEMT product designed for DBS
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FHX76LP
12GHz
FHX76LP
Tota4888
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TM 1628 Datasheet
Abstract: FHX76LP 083-6 s-parameter s11 s12 s21 10000 RM1101
Text: FHX76LP Super Low Noise HEMT FEATURES • Low Noise Figure: NF=0.40dB Typ. @f=12GHz • High Associated Gain: Gas=13.5dB (Typ.)@f=12GHz • High Reliability • Small Size SMT Package • Tape and Reel Packaging Available DESCRIPTION TM The FHX76LP is a low noise SuperHEMT product designed for DBS
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FHX76LP
12GHz
FHX76LP
Tota4888
TM 1628 Datasheet
083-6
s-parameter s11 s12 s21 10000
RM1101
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FHX76LP
Abstract: NF04 065mm Eudyna Packaging
Text: FHX76LP Super Low Noise HEMT FEATURES • Low Noise Figure: NF=0.40dB Typ. @f=12GHz • High Associated Gain: Gas=13.5dB (Typ.)@f=12GHz • High Reliability • Small Size SMT Package • Tape and Reel Packaging Available DESCRIPTION TM The FHX76LP is a low noise SuperHEMT product designed for DBS
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FHX76LP
12GHz
FHX76LP
Temperatur4888
NF04
065mm
Eudyna Packaging
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Eudyna Devices X BAND power amplifiers
Abstract: FSX017LG Eudyna Devices
Text: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION
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FSX017LG
FSX017LG
12GHz.
U4888
Eudyna Devices X BAND power amplifiers
Eudyna Devices
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FLU35XM
Abstract: No abstract text available
Text: FLU35XM L-Band Medium & High Power GaAs FET FEATURES • High Output Power: P1dB=35.5dBm Typ. • High Gain: G1dB=12.5dB (Typ.) • High PAE: ηadd=46% (Typ.) • Hermetic Metal/Ceramic (SMT) Package • Tape and Reel Available DESCRIPTION The FLU35XM is a GaAs FET designed for base station applications in the
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FLU35XM
FLU35XM
V4888
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Eudyna Devices
Abstract: ml marking FMM1062ML eudyna an
Text: FMM1062ML GaAs MMIC FEATURES • Low Power Consumption: 60mW Typ. • Operation to 6.0 GHz • Input Frequency divide by 4, OUT and OUT • -3V (or+3V) DC Single Power Supply • External 50 ohm Load Driving Capability • Small 6-pin Plastic Package for SMT applications (ML)
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FMM1062ML
FMM1062ML
Paramete4888
Eudyna Devices
ml marking
eudyna an
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FHX04LG
Abstract: FHX04 FHX05LG FHX06LG low noise hemt 2-18G 12GAS
Text: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX04LG,
12GHz
FHX04)
FHX05LG,
FHX06LG
2-18GHz
FHX04LG
FHX04
FHX05LG
low noise hemt
2-18G
12GAS
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FSU02LG
Abstract: Eudyna Devices FUJITSU RF 053 DC bias of gaas FET
Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package
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FSU02LG
FSU02LG
Dissipa4888
Eudyna Devices
FUJITSU RF 053
DC bias of gaas FET
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FSU01LG
Abstract: Eudyna Devices
Text: FSU01LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Associated Gain: G1dB = 19.0dB (Typ.) • Low Noise Figure: NF=0.55dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 10mA • Cost Effective Hermetic Microstrip Package
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FSU01LG
FSU01LG
Eudyna Devices
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FHX35LP
Abstract: FHX35LG WG 924 FHX35
Text: FHX35LG Super Low Noise HEMT FEATURES • Low Noise Figure: 1.2B Typ. @f=12GHz • High Associated Gain: 10.0dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX35LG
12GHz
FHX35LG
2-18GHz
reliabili4888
FHX35LP
WG 924
FHX35
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Untitled
Abstract: No abstract text available
Text: FHX35LG Super Low Noise HEMT FEATURES • Low Noise Figure: 1.2B Typ. @f=12GHz • High Associated Gain: 10.0dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX35LG
12GHz
FHX35LG
2-18GHz
the88
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Untitled
Abstract: No abstract text available
Text: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX04LG,
12GHz
FHX04)
FHX05LG,
FHX06LG
2-18GHz
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FHX13LG
Abstract: FHX13 FHX14LG
Text: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ≤ 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX13LG,
FHX14LG
12GHz
FHX13)
FHX14LG
2-18GHz
FHX13LG
FHX13
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08/bup 3110 transistor
Abstract: No abstract text available
Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHC40LG
FHC40LG
2-12GHz
08/bup 3110 transistor
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high power FET transistor s-parameters
Abstract: ED-4701 FLU35ZM High Power GaAs FET
Text: FLU35ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=35.5dBm typ. ・High Gain: G1dB=11.5dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU35ZM is a GaAs FET designed for base station and CPE
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FLU35ZM
FLU35ZM
high power FET transistor s-parameters
ED-4701
High Power GaAs FET
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Untitled
Abstract: No abstract text available
Text: FLU10ZM L-Band Medium & High Power GaAs FET FEATURES ・High Output Power: P1dB=29.5dBm typ. ・High Gain: G1dB=13.0dB(typ.) ・Low Cost Plastic(SMT) Package ・Tape and Reel Available DESCRIPTION The FLU10ZM is a GaAs FET designed for base station and CPE
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FLU10ZM
FLU10ZM
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