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    FSX017LG Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FSX017LG Eudyna Devices General Purpose GaAs FET Original PDF
    FSX017LG/001 Fujitsu GaAs FET Original PDF
    FSX017LG/001 Fujitsu FET Transistor: Packaged GaAs FET Original PDF
    FSX017LG/001-E1 Fujitsu FET Transistor: Packaged GaAs FET Original PDF
    FSX017LG-E1 Fujitsu FET: P Channel: ID 0.075 A Original PDF

    FSX017LG Datasheets Context Search

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    FSX017LG

    Abstract: fujitsu gaas fet
    Text: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION


    Original     		PDF FSX017LG FSX017LG 12GHz. FCSI0598M200 fujitsu gaas fet

    FSX017L

    Abstract: S12MAG Eudyna Devices X BAND power amplifiers
    Text: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION


    Original     		PDF FSX017LG FSX017LG 12GHz. FSX017L S12MAG Eudyna Devices X BAND power amplifiers

    EUDYNA

    Abstract: FSX017X/001 FSX017X
    Text: FSX017LG/001 FSX017X/001 GaAs FET DESCRIPTION The FSX017/001 Chip and FSX017LG/001 packaged devices are GaAs MESFETs for use as the FET front end of an optical receiver in high speed lightwave communication systems. The N-channel design with 0.5 micron gate length, and high speed Schottky-Barrier gate FET combines high


    Original     		PDF FSX017LG/001 FSX017X/001 FSX017/001 FSX017LG/001 RATINGS4888 EUDYNA FSX017X/001 FSX017X

    FSX017X/001

    Abstract: bonder Fsx017LG fujitsu gaas fet
    Text: FSX017LG/001 FSX017X/001 GaAs FET DESCRIPTION The FSX017X/001 Chip and FSX017LG/001 packaged devices are GaAs MESFETs for use as the FET front end of an optical receiver in high speed lightwave communication systems. The N-channel design with 0.5 micron gate length, and high speed Schottky-Barrier gate FET combines high


    Original     		PDF FSX017LG/001 FSX017X/001 FSX017X/001 FSX017LG/001 FCSI0598M200 bonder Fsx017LG fujitsu gaas fet

    Untitled

    Abstract: No abstract text available
    Text: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION


    Original     		PDF FSX017LG FSX017LG 12GHz. FCSI0598M200

    Eudyna Devices X BAND power amplifiers

    Abstract: FSX017LG Eudyna Devices
    Text: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION


    Original     		PDF FSX017LG FSX017LG 12GHz. U4888 Eudyna Devices X BAND power amplifiers Eudyna Devices

    FSX017LG

    Abstract: FSX017
    Text: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P1dB = 16.0dBm Typ. @12.0GHz • High Power Gain: G1dB = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION


    Original     		PDF FSX017LG FSX017LG 12GHz. Uni73 FSX017

    fujitsu x band amplifiers

    Abstract: FSX017LG Q1150 fujitsu gaas fet
    Text: FSX017LG General Purpose GaAs FET FEATURES • Medium Power Output: P-|dE3 = 16.0dBm Typ. @12.0GHz • High Power Gain: G ^ g = 8.0dB (Typ.)@12.0GHz • Proven Reliability • Cost Effective Hermetic Microstrip Package • Tape and Reel Available DESCRIPTION


    OCR Scan     		PDF FSX017L FSX017LG 12GHz. FCSI0598M200 fujitsu x band amplifiers Q1150 fujitsu gaas fet

    FSX017LG/001-E1

    Abstract: FSX017LG
    Text: FSXOl 7LG G en eral Purpose Ga As F E i s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 8 V Gate-Source Voltage VGS -5 V Total Power Dissipation Ptot 220 mW Storage Temperature Tstg -65 to +175


    OCR Scan     		PDF 2000Q. FSX017LG/001-E1 FSX017LG

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


    OCR Scan     		PDF

    FSX52WF

    Abstract: GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG
    Text: LOW NOISE HEMTs Electrical Characteristics Ta = 25°C NF TYP. (dB) Gas TYP. (dB) f (GHz) VDS (V) •os (mA) Package Type Frequency Band FHC40LG* 0.30 15.5 4 2 10 LG/LP C FHX13LG* 0.45 12.5 12 2 10 LG/LP FHX14LG* 0.60 12.5 12 2 10 LG/LP FHX04LG* 0.75 10.5


    OCR Scan     		PDF FHC40LG* FHX13LG* FHX14LG* FHX04LG* FHX05LG* FHX06LG* FHX35LG* FHR02FH FSX52WF GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG