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    FSU02LG Search Results

    FSU02LG Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FSU02LG Eudyna Devices General Purpose GaAs FET Original PDF
    FSU02LG-E1 Fujitsu FET: P Channel: ID 0.15 A Original PDF

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    fujitsu gaas fet

    Abstract: fujitsu GHz gaas fet
    Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU02LG FSU02LG FCSI0598M200 fujitsu gaas fet fujitsu GHz gaas fet

    FSU02LG

    Abstract: Eudyna Devices FUJITSU RF 053 DC bias of gaas FET
    Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU02LG FSU02LG Dissipa4888 Eudyna Devices FUJITSU RF 053 DC bias of gaas FET

    Untitled

    Abstract: No abstract text available
    Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU02LG FSU02LG Eud49

    1084 fet

    Abstract: fujitsu gaas fet fujitsu GHz gaas fet
    Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU02LG FSU02LG FCSI0598M200 1084 fet fujitsu gaas fet fujitsu GHz gaas fet

    5503 FET

    Abstract: 5503 GM FSU02LG FSU02
    Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU02LG FSU02LG 5503 FET 5503 GM FSU02

    FSU02LG

    Abstract: v 4836 fujitsu GHz gaas fet
    Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU02LG FSU02LG FCSI0598M200 v 4836 fujitsu GHz gaas fet

    Untitled

    Abstract: No abstract text available
    Text: FSU02LG General Purpose GaAs FET FEATURES • High Output Power: P1dB = 23.0dBm Typ. @2GHz • High Associated Gain: G1dB = 17.0dB (Typ.)@2GHz • Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz • Low Bias Conditions: VDS=3V, 20mA • Cost Effective Hermetic Microstrip Package


    Original     		PDF FSU02LG FSU02LG

    fujitsu gaas fet

    Abstract: FSU02LG FUJITSU RF 053
    Text: FSU02LG General Purpose GaAs FET FEATURES • • • • • • High Output Power: P ^ b = 23.0dBm Typ. @2GHz High Associated Gain: G ^ b = 17.0dB (Typ.)@2GHz Low Noise Figure: NF=1,5dB (Typ.)@ f=2G Hz Low Bias Conditions: VQg=3V, 20mA Cost Effective Hermetic Microstrip Package


    OCR Scan     		PDF FSU02LG FSU02LG FCSI0598M200 fujitsu gaas fet FUJITSU RF 053