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    FHX06LG Search Results

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    FHX06LG Price and Stock

    FUJITSU Limited FHX06LG

    RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, KU BAND, GALLIUM ARSENIDE, N-CHANNEL, HIGH ELECTRON MOBILITY FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components FHX06LG 1,263
    • 1 $8.1
    • 10 $8.1
    • 100 $8.1
    • 1000 $2.97
    • 10000 $2.835
    		Buy Now

    FHX06LG Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FHX06LG Eudyna Devices TRANS JFET 3.5V 4LG Original PDF
    FHX06LG Fujitsu FET, P Channel, ID 0.06 A Original PDF
    FHX06LG Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FHX06LG Unknown FET Data Book Scan PDF

    FHX06LG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fujitsu hemt

    Abstract: No abstract text available
    Text: FHX04LG/LP, 05LG/LP, 06LG/LP Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ² 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		PDF FHX04LG/LP, 05LG/LP, 06LG/LP 12GHz FHX04) FHX05LG/LP, FHX06LG/LP 2-18GHz fujitsu hemt

    FHX04LG

    Abstract: FHX04 FHX05LG FHX06LG TVRO 4232 gm fujitsu hemt FHX*LG
    Text: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		PDF FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz FCSI0598M200 FHX04LG FHX04 FHX05LG TVRO 4232 gm fujitsu hemt FHX*LG

    FHX04LG

    Abstract: FHX04 FHX05LG FHX06LG low noise hemt 2-18G 12GAS
    Text: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		PDF FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz FHX04LG FHX04 FHX05LG low noise hemt 2-18G 12GAS

    Untitled

    Abstract: No abstract text available
    Text: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		PDF FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz

    FHX04

    Abstract: FHX04LG FHX05LG FHX06LG Eudyna Packaging
    Text: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		PDF FHX04LG, 12GHz FHX04) FHX05LG, FHX06LG 2-18GHz FHX04 FHX04LG FHX05LG Eudyna Packaging

    fujitsu hemt

    Abstract: FHX04 FHX04LG 4232 gm CQ 527
    Text: FHX04LG/LP, 05LG/LP, 06LG/LP Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg s 0.25|iim, Wg = 200|iim • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    OCR Scan     		PDF FHX04LG/LP, 05LG/LP, 06LG/LP 12GHz FHX04) FHX05LG/LP, FHX06LG/LP 2-18GHz fujitsu hemt FHX04 FHX04LG 4232 gm CQ 527

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


    OCR Scan     		PDF

    FSX52WF

    Abstract: GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG
    Text: LOW NOISE HEMTs Electrical Characteristics Ta = 25°C NF TYP. (dB) Gas TYP. (dB) f (GHz) VDS (V) •os (mA) Package Type Frequency Band FHC40LG* 0.30 15.5 4 2 10 LG/LP C FHX13LG* 0.45 12.5 12 2 10 LG/LP FHX14LG* 0.60 12.5 12 2 10 LG/LP FHX04LG* 0.75 10.5


    OCR Scan     		PDF FHC40LG* FHX13LG* FHX14LG* FHX04LG* FHX05LG* FHX06LG* FHX35LG* FHR02FH FSX52WF GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG

    FSX52WF

    Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
    Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of


    OCR Scan     		PDF FLX202MH-12 FLK202MH-14 FSX52WF fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK

    Untitled

    Abstract: No abstract text available
    Text: , FHX04LG 05LG, 06LG Low Noise H E M T ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 3.5 V Gate-Source Voltage VGS -3.0 V Total Power Dissipation Ptot 180 mW Storage Temperature Tstg -65 to +175


    OCR Scan     		PDF FHX04LG 4000Q.