Eudyna Packaging
Abstract: No abstract text available
Text: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ≤ 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX13LG,
FHX14LG
12GHz
FHX13)
FHX14LG
2-18GHz
Eudyna Packaging
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FHX13LP
Abstract: FHX14lp FHX13LG
Text: FHX13LG/LP, 14LG/LP Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ² 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX13LG/LP,
14LG/LP
12GHz
FHX13)
FHX14LG/LP
2-18GHz
FCSI0598M200
FHX13LP
FHX14lp
FHX13LG
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15A03
Abstract: No abstract text available
Text: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ≤ 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX13LG,
FHX14LG
12GHz
FHX13)
FHX14LG
2-18GHz
15A03
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FHX13LG
Abstract: FHX13 FHX14LG
Text: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ≤ 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX13LG,
FHX14LG
12GHz
FHX13)
FHX14LG
2-18GHz
FHX13LG
FHX13
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low noise hemt
Abstract: FHX13LG FHX*LG low noise hemt transistor FHX13 FHX14LG
Text: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ≤ 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX13LG,
FHX14LG
12GHz
FHX13)
FHX14LG
2-18GHz
low noise hemt
FHX13LG
FHX*LG
low noise hemt transistor
FHX13
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FHX13LG
Abstract: fujitsu hemt FHX13 FHX14LG
Text: FHX13LG, FHX14LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg ≤ 0.15µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX13LG,
FHX14LG
12GHz
FHX13)
FHX14LG
2-18GHz
FCSI0598M200
FHX13LG
fujitsu hemt
FHX13
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MRF947T1 equivalent
Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi
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2SA1977
2SA1978
2SC2351
2SC3355
2SC3357
2SC3545
2SC3583
2SC3585
2SC4093
2SC4094
MRF947T1 equivalent
MRF947T1 equivalent transistor
NJ1006
BFP320
fll120mk
FLL101ME
MGF4919G
fujitsu gaas fet fhx76lp
HPMA-2086
MMBR521L
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FHX13LP
Abstract: FHX14LP transistor fhx 35 lp FHX13LG FHX13 fujitsu hemt FHX14LG Z150 low noise hemt transistor low noise hemt
Text: FHX13LG/LP, 14LG/LP Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg s 0.15|iim, Wg = 200|iim • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX13LG/LP,
14LG/LP
12GHz
FHX13)
2-18GHz
FCSI0598M200
FHX13LP
FHX14LP
transistor fhx 35 lp
FHX13LG
FHX13
fujitsu hemt
FHX14LG
Z150
low noise hemt transistor
low noise hemt
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FSX52WF
Abstract: GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG
Text: LOW NOISE HEMTs Electrical Characteristics Ta = 25°C NF TYP. (dB) Gas TYP. (dB) f (GHz) VDS (V) •os (mA) Package Type Frequency Band FHC40LG* 0.30 15.5 4 2 10 LG/LP C FHX13LG* 0.45 12.5 12 2 10 LG/LP FHX14LG* 0.60 12.5 12 2 10 LG/LP FHX04LG* 0.75 10.5
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FHC40LG*
FHX13LG*
FHX14LG*
FHX04LG*
FHX05LG*
FHX06LG*
FHX35LG*
FHR02FH
FSX52WF
GaAs HEMTs X band
FSX017LG
FHX05LG
fhx06lg
FSU01LG
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FHX13LG
Abstract: No abstract text available
Text: F H X 13 LG, FHX14LG Low Noise HEMT Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 3.5 V Gate-Source Voltage vgs -3.0 V Total Power Dissipation Ptot 180 mW Storage Temperature Tstg -65 t o +175 °C Channel Temperature Tch 175 °C Note Note: Mounted on AI2O3 board 30 x 30 x 0.65mm
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FHX14LG
FHX13LG
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FMC141401-02
Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking
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