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    EMVY500 Search Results

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    EMVY500 Price and Stock

    United Chemi-Con Inc EMVY500ARA470MF80G

    CAP ALUM 47UF 20% 50V SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EMVY500ARA470MF80G Reel 2,700 900
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    • 1000 $0.13998
    • 10000 $0.10905
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    Mouser Electronics EMVY500ARA470MF80G 13,323
    • 1 $0.42
    • 10 $0.226
    • 100 $0.161
    • 1000 $0.129
    • 10000 $0.109
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    Chip One Stop EMVY500ARA470MF80G Cut Tape 35
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    • 10 $0.403
    • 100 $0.403
    • 1000 $0.403
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    New Advantage Corporation EMVY500ARA470MF80G 13,500 1
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    • 10000 $0.14
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    United Chemi-Con Inc EMVY500ARA100MF55G

    CAP ALUM 10UF 20% 50V SMD
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    DigiKey EMVY500ARA100MF55G Cut Tape 2,218 1
    • 1 $0.29
    • 10 $0.193
    • 100 $0.116
    • 1000 $0.09158
    • 10000 $0.09158
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    EMVY500ARA100MF55G Digi-Reel 2,218 1
    • 1 $0.29
    • 10 $0.193
    • 100 $0.116
    • 1000 $0.09158
    • 10000 $0.09158
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    EMVY500ARA100MF55G Reel 2,000 1,000
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    • 10000 $0.06513
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    Mouser Electronics EMVY500ARA100MF55G
    • 1 $0.38
    • 10 $0.257
    • 100 $0.154
    • 1000 $0.103
    • 10000 $0.084
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    Chip One Stop EMVY500ARA100MF55G Cut Tape 1,000
    • 1 -
    • 10 $0.266
    • 100 $0.106
    • 1000 $0.089
    • 10000 $0.089
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    United Chemi-Con Inc EMVY500GRA471MLH0S

    CAP ALUM 470UF 20% 50V SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EMVY500GRA471MLH0S Digi-Reel 370 1
    • 1 $3.53
    • 10 $2.333
    • 100 $3.53
    • 1000 $3.53
    • 10000 $3.53
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    EMVY500GRA471MLH0S Cut Tape 370 1
    • 1 $3.53
    • 10 $2.333
    • 100 $3.53
    • 1000 $3.53
    • 10000 $3.53
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    EMVY500GRA471MLH0S Reel 350 175
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    • 10000 $1.23073
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    Master Electronics EMVY500GRA471MLH0S 350
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    • 1000 $1.38
    • 10000 $1.18
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    United Chemi-Con Inc EMVY500ARA331MLH0S

    CAP ALUM 50V POLAR
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    DigiKey EMVY500ARA331MLH0S Reel 350 175
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    • 1000 $0.51209
    • 10000 $0.42459
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    EMVY500ARA331MLH0S Digi-Reel 350 1
    • 1 $1.52
    • 10 $0.96
    • 100 $1.52
    • 1000 $1.52
    • 10000 $1.52
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    EMVY500ARA331MLH0S Cut Tape 350 1
    • 1 $1.52
    • 10 $0.96
    • 100 $1.52
    • 1000 $1.52
    • 10000 $1.52
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    Mouser Electronics EMVY500ARA331MLH0S
    • 1 $1.62
    • 10 $1.21
    • 100 $0.909
    • 1000 $0.726
    • 10000 $0.576
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    United Chemi-Con Inc EMVY500ARA471MMH0S

    CAP ALUM 50V POLAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey EMVY500ARA471MMH0S Digi-Reel 280 1
    • 1 $1.75
    • 10 $1.113
    • 100 $1.75
    • 1000 $1.75
    • 10000 $1.75
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    EMVY500ARA471MMH0S Cut Tape 280 1
    • 1 $1.75
    • 10 $1.113
    • 100 $1.75
    • 1000 $1.75
    • 10000 $1.75
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    Mouser Electronics EMVY500ARA471MMH0S
    • 1 $1.74
    • 10 $1.34
    • 100 $1.02
    • 1000 $0.821
    • 10000 $0.667
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    Find more EMVY500 price and stock on Findchips.com

    EMVY500 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EMVY500ADA100MF55G Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 10UF 50V 20% SMD Original PDF
    EMVY500ADA101MHA0G Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 100UF 50V 20% SMD Original PDF
    EMVY500ADA101MJA0G Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 100UF 50V 20% SMD Original PDF
    EMVY500ADA1R0MD55G Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 1.0UF 50V 20% SMD Original PDF
    EMVY500ADA220MF55G Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 22UF 50V 20% SMD Original PDF
    EMVY500ADA221MJA0G Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 220UF 50V 20% SMD Original PDF
    EMVY500ADA2R2MD55G Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 2.2UF 50V 20% SMD Original PDF
    EMVY500ADA330MF80G Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 33UF 50V 20% SMD Original PDF
    EMVY500ADA3R3MD55G Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 3.3UF 50V 20% SMD Original PDF
    EMVY500ADA470MF80G Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 47UF 50V 20% SMD Original PDF
    EMVY500ADA4R7ME55G Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 4.7UF 50V 20% SMD Original PDF
    EMVY500ADA680MHA0G Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 68UF 50V 20% SMD Original PDF
    EMVY500ARA331MKE0S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 330UF 50V 20% SMD Original PDF
    EMVY500BTR471MMH0S Chemi-Con CAP 470UF 50V ELECT MVY SMD Original PDF
    EMVY500GDA102MMN0S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 1000UF 50V 20% SMD Original PDF
    EMVY500GDA221MJA0G Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 220UF 50V 20% SMD Original PDF
    EMVY500GDA331MLH0S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 330UF 50V 20% SMD Original PDF
    EMVY500GDA471MLH0S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 470UF 50V 20% SMD Original PDF
    EMVY500GDB331MLH0S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 330UF 50V 20% SMD Original PDF
    EMVY500GTR102MMN0S Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 1000UF 50V 20% SMD Original PDF

    EMVY500 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C MZA Lower Z @Endurance : 1,000 to 5,000 hours at 105C @Low impedance @For digital equipment, especially DC-DC converters @Solvent resistant type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES


    Original     		100Vdc 63Vdc) 100Vdc) 120Hz) 822MMN0S EMVY500ADA1R0MD55G EMVY500ADA2R2MD55G EMVY500ADA3R3MD55G EMVY500ADA4R7ME55G PDF

    Untitled

    Abstract: No abstract text available
    Text: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		TGF2819-FL TGF2819-FL PDF

    Untitled

    Abstract: No abstract text available
    Text: T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		T1G4012036-FS T1G4012036-FS PDF

    EMVY101ARA101MKE0S

    Abstract: EMVY160ARA102MKE0S EMVY350ADA470MF55G EMVY350ADA470 emvy500 EMVY101ARA680MKE EMVY350ARA471MKE0S EMVY500ADA221MJA0G 10MF EMVY6R3ADA220MD55G
    Text: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C MZA @Endurance : 1,000 to 5,000 hours at 105C @Low impedance @For digital equipment, especially DC-DC converters @Solvent resistant type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES


    Original     		100Vdc 63Vdc) 100Vdc) 120Hz) EMVY500ADA1R0MD55G EMVY500ADA2R2MD55G EMVY500ADA3R3MD55G EMVY500ADA4R7ME55G EMVY500ADA100MF55G EMVY101ARA101MKE0S EMVY160ARA102MKE0S EMVY350ADA470MF55G EMVY350ADA470 emvy500 EMVY101ARA680MKE EMVY350ARA471MKE0S EMVY500ADA221MJA0G 10MF EMVY6R3ADA220MD55G PDF

    JA02

    Abstract: EMVY101ARA680MKE EMVY350ADA100ME55G EMVY630ara221 JA-02 e55 f55 f61
    Text: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105℃ MZA ●Endurance : 1,000 to 5,000 hours at 105℃ ●Low impedance ●For digital equipment, especially DC-DC converters ●Solvent resistant type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES


    Original     		100Vdc 63Vdc) 100Vdc) 120Hz) EMVY630ARA680MKE0S EMVY630ARA101MKE0S EMVY630ARA221MKE0S EMVY630DA221MLH0S EMVY630DA331MLH0S JA02 EMVY101ARA680MKE EMVY350ADA100ME55G EMVY630ara221 JA-02 e55 f55 f61 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 5, 5/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1.1, 12/2009 RF Power Field Effect Transistors MRF6S18140HR3 MRF6S18140HSR3 Designed for N-CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-


    Original     		MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 IS-95 MRF6S18140HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21050L Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110


    Original     		MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 MRF6S21050LR3 PDF

    ON SEMICONDUCTOR J122

    Abstract: J730 512 j122 MHz-2170 EMVY500ADA221MJA0G ATC600F1R2BT250XT 8383d 146 J122
    Text: Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical


    Original     		MRF8HP21130H MRF8HP2113ficers, MRF8HP21130HR3 MRF8HP21130HSR3 MRF8HP21130H ON SEMICONDUCTOR J122 J730 512 j122 MHz-2170 EMVY500ADA221MJA0G ATC600F1R2BT250XT 8383d 146 J122 PDF

    b0912

    Abstract: No abstract text available
    Text: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		T1G6003028-FS T1G6003028-FS b0912 PDF

    465B

    Abstract: A114 A115 AN1955 JESD22 MRF6S18140HR3 MRF6S18140HSR3 Nippon capacitors Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S18140H Rev. 1, 12/2008 N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18140HR3 MRF6S18140HSR3 LIFETIME BUY Designed for N - CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF6S18140H MRF6S18140HR3 MRF6S18140HSR3 MRF6S18140HR3 465B A114 A115 AN1955 JESD22 MRF6S18140HSR3 Nippon capacitors Nippon chemi PDF

    ATC100B102JP50XT

    Abstract: nippon capacitors JESD22 MRF6P9220HR3 A114 AN1955 ATC100B101JP500XT Nippon chemi
    Text: MRF6P9220HR3 replaced by MRFE6P9220HR3. Refer to Device Migration PCN12895 for more details. RF Power Field Effect Transistor MRF6P9220HR3 N - Channel Enhancement - Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with


    Original     		MRF6P9220HR3 MRFE6P9220HR3. PCN12895 MRF6P9220HR3 20ers, MRF6P9220H ATC100B102JP50XT nippon capacitors JESD22 A114 AN1955 ATC100B101JP500XT Nippon chemi PDF

    NIPPON CAPACITORS

    Abstract: p 150 54 465B A114 A115 AN1955 JESD22 MRF6S21190H MRF6S21190HR3 MRF6S21190HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21190H Rev. 1, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21190HR3 MRF6S21190HSR3 Designed for W - CDMA base station applications with frequencies from 2110


    Original     		MRF6S21190H MRF6S21190HR3 MRF6S21190HSR3 MRF6S21190HR3 NIPPON CAPACITORS p 150 54 465B A114 A115 AN1955 JESD22 MRF6S21190H MRF6S21190HSR3 PDF

    k 2645 MOSFET

    Abstract: K 2645 transistor C1825C103J1RAC TRANSISTOR MOSFET 2645 J204 mosfet j142 transistor d 2645 p 01 k 2645 A114 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor C1825C103J1RAC TRANSISTOR MOSFET 2645 J204 mosfet j142 transistor d 2645 p 01 k 2645 A114 C101 PDF

    Untitled

    Abstract: No abstract text available
    Text: T1G3000532-SM 5W, 32V, 0.03 – 3.5 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		T1G3000532-SM T1G3000532-SM 30MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: TGF3015-SM 10W, 32V, 0.03 – 3 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Land mobile and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		TGF3015-SM TGF3015-SM PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    Untitled

    Abstract: No abstract text available
    Text: T2G6003028-FS 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •


    Original     		T2G6003028-FS T2G6003028-FS TQGaN25 PDF

    ATC100B101JT500XT

    Abstract: T491C105K050AT NIPPON CAPACITORS dvbt A114 A115 AN1955 C101 JESD22 MRFE6P3300HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 0, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6P3300HR3 MRFE6P3300HR5 Designed for broadband commercial and industrial applications with


    Original     		MRFE6P3300H MRFE6P3300HR3 MRFE6P3300HR5 MRFE6P3300HR3 ATC100B101JT500XT T491C105K050AT NIPPON CAPACITORS dvbt A114 A115 AN1955 C101 JESD22 PDF

    ATC100B9R1CT500XT

    Abstract: 465B A114 A115 AN1955 JESD22 MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 5, 5/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3 ATC100B9R1CT500XT 465B A114 A115 AN1955 JESD22 MRF6S19140H MRF6S19140HSR3 Nippon capacitors PDF

    J1126

    Abstract: Soshin HYB0750 J16-36 GSC268-HYB0750 A114 A115 AN1977 AN1987 Nippon chemi JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MDE6IC7120N Rev. 0, 10/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC7120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 728 to 768 MHz. This multi - stage


    Original     		MDE6IC7120N MDE6IC7120N/GN MDE6IC7120NR1 MDE6IC7120GNR1 J1126 Soshin HYB0750 J16-36 GSC268-HYB0750 A114 A115 AN1977 AN1987 Nippon chemi JESD22 PDF

    UF4007 equivalent

    Abstract: No abstract text available
    Text: User's Guide SLLU136A – September 2011 – Revised November 2012 ISO5500EVM This document describes the ISO5500 Evaluation Module EVM and allows designers to analyze and evaluate the Texas Instruments ISO5500 Isolated Gate Driver. The ISO5500EVM can be used to evaluate device parameters while acting as a guide for board layout.


    Original     		SLLU136A ISO5500EVM ISO5500 ISO5500EVM 10-nF) O-247 ISO5500. UF4007 equivalent PDF

    all transistor datasheet

    Abstract: TQP0102-PCB
    Text: TQP0102 5 W, DC to 4 GHz, GaN Power Transistor Applications • • • • Small Cell Base Station Microcell Base Station Driver Active Antenna General Purpose Applications 16 Pin 3x3mm QFN Product Features • • • • • Functional Block Diagram Operating Frequency Range: DC to 4 GHz


    Original     		TQP0102 TQP0102 all transistor datasheet TQP0102-PCB PDF

    UT-141A-TP

    Abstract: NIPPON CAPACITORS UT141A-TP MRFE6P3300H 863MHz dvbt 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A114
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 2, 12/2009 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance


    Original     		MRFE6P3300H MRFE6P3300HR3 UT-141A-TP NIPPON CAPACITORS UT141A-TP MRFE6P3300H 863MHz dvbt 250GX-0300-55-22 AN1955 CDR33BX104AKYS JESD22-A114 PDF