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    EMVY500ADA221MJA0G Price and Stock

    Chemi-Con EMVY500ADA221MJA0G

    Cap Aluminum Lytic 220uF 50V 20% (10 X 10mm) SMD 0.5A 2000h 105C T/R Automotive AEC-Q200
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    Verical EMVY500ADA221MJA0G 47,808 189
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    Quest Components EMVY500ADA221MJA0G 1,722
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    TTI EMVY500ADA221MJA0G Reel 38,500 500
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    United Chemi-Con Inc EMVY500ADA221MJA0G

    Aluminum Electrolytic Capacitor, 220Uf, 50V, Full Reel; Capacitor Case/Package:Radial Can - Smd; Capacitance:220Μf; Voltage(Dc):50V; Esr:0.3Ohm; Lifetime @ Temperature:2000 Hours @ 105°C; Polarity:Polar; Capacitance Tolerance:± 20%rohs Compliant: Yes |Chemi-Con EMVY500ADA221MJA0G
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    Newark EMVY500ADA221MJA0G Reel 500
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    Bristol Electronics EMVY500ADA221MJA0G 35 5
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    Quest Components EMVY500ADA221MJA0G 28
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    Avnet Abacus EMVY500ADA221MJA0G 500 143 Weeks 500
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    Chip One Stop EMVY500ADA221MJA0G Cut Tape 47,808 0 Weeks, 1 Days 5
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    Vyrian EMVY500ADA221MJA0G 37,499
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    United Chemi-Con Inc EMVY500ADA221MJA0G+R

    Cap Alu SMD 220uF 20 50V 105C 2000hrs 500mA 10x10 Auto Low ESR (Alt: EMVY500ADA221MJA0G+R)
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    Avnet Abacus EMVY500ADA221MJA0G+R 143 Weeks 500
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    EMVY500ADA221MJA0G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    EMVY500ADA221MJA0G Nippon Chemi-Con Aluminum Capacitors, Capacitors, CAP ALUM 220UF 50V 20% SMD Original PDF

    EMVY500ADA221MJA0G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C MZA Lower Z @Endurance : 1,000 to 5,000 hours at 105C @Low impedance @For digital equipment, especially DC-DC converters @Solvent resistant type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES


    Original     		100Vdc 63Vdc) 100Vdc) 120Hz) 822MMN0S EMVY500ADA1R0MD55G EMVY500ADA2R2MD55G EMVY500ADA3R3MD55G EMVY500ADA4R7ME55G PDF

    Untitled

    Abstract: No abstract text available
    Text: TGF2819-FL 100W Peak Power, 20W Average Power, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		TGF2819-FL TGF2819-FL PDF

    Untitled

    Abstract: No abstract text available
    Text: T1G4012036-FS 120W Peak Power, 24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		T1G4012036-FS T1G4012036-FS PDF

    EMVY101ARA101MKE0S

    Abstract: EMVY160ARA102MKE0S EMVY350ADA470MF55G EMVY350ADA470 emvy500 EMVY101ARA680MKE EMVY350ARA471MKE0S EMVY500ADA221MJA0G 10MF EMVY6R3ADA220MD55G
    Text: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C MZA @Endurance : 1,000 to 5,000 hours at 105C @Low impedance @For digital equipment, especially DC-DC converters @Solvent resistant type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES


    Original     		100Vdc 63Vdc) 100Vdc) 120Hz) EMVY500ADA1R0MD55G EMVY500ADA2R2MD55G EMVY500ADA3R3MD55G EMVY500ADA4R7ME55G EMVY500ADA100MF55G EMVY101ARA101MKE0S EMVY160ARA102MKE0S EMVY350ADA470MF55G EMVY350ADA470 emvy500 EMVY101ARA680MKE EMVY350ARA471MKE0S EMVY500ADA221MJA0G 10MF EMVY6R3ADA220MD55G PDF

    JA02

    Abstract: EMVY101ARA680MKE EMVY350ADA100ME55G EMVY630ara221 JA-02 e55 f55 f61
    Text: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105℃ MZA ●Endurance : 1,000 to 5,000 hours at 105℃ ●Low impedance ●For digital equipment, especially DC-DC converters ●Solvent resistant type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES


    Original     		100Vdc 63Vdc) 100Vdc) 120Hz) EMVY630ARA680MKE0S EMVY630ARA101MKE0S EMVY630ARA221MKE0S EMVY630DA221MLH0S EMVY630DA331MLH0S JA02 EMVY101ARA680MKE EMVY350ADA100ME55G EMVY630ara221 JA-02 e55 f55 f61 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21050L Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110


    Original     		MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 MRF6S21050LR3 PDF

    ON SEMICONDUCTOR J122

    Abstract: J730 512 j122 MHz-2170 EMVY500ADA221MJA0G ATC600F1R2BT250XT 8383d 146 J122
    Text: Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical


    Original     		MRF8HP21130H MRF8HP2113ficers, MRF8HP21130HR3 MRF8HP21130HSR3 MRF8HP21130H ON SEMICONDUCTOR J122 J730 512 j122 MHz-2170 EMVY500ADA221MJA0G ATC600F1R2BT250XT 8383d 146 J122 PDF

    b0912

    Abstract: No abstract text available
    Text: T1G6003028-FS 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		T1G6003028-FS T1G6003028-FS b0912 PDF

    NIPPON CAPACITORS

    Abstract: p 150 54 465B A114 A115 AN1955 JESD22 MRF6S21190H MRF6S21190HR3 MRF6S21190HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21190H Rev. 1, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21190HR3 MRF6S21190HSR3 Designed for W - CDMA base station applications with frequencies from 2110


    Original     		MRF6S21190H MRF6S21190HR3 MRF6S21190HSR3 MRF6S21190HR3 NIPPON CAPACITORS p 150 54 465B A114 A115 AN1955 JESD22 MRF6S21190H MRF6S21190HSR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: TGF3020-SM 5W, 32V, 4 – 6 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Telemetry C-band radar Communications Test instrumentation Wideband amplifiers 5.8GHz ISM Functional Block Diagram Product Features • • • • • •


    Original     		TGF3020-SM TGF3020-SM PDF

    Untitled

    Abstract: No abstract text available
    Text: TGF3015-SM 10W, 32V, 0.03 – 3 GHz, GaN RF Input-Matched Transistor Applications • • • • • • Military radar Civilian radar Land mobile and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		TGF3015-SM TGF3015-SM PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    Untitled

    Abstract: No abstract text available
    Text: T2G6003028-FS 30W, 28V DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features •


    Original     		T2G6003028-FS T2G6003028-FS TQGaN25 PDF

    J1126

    Abstract: Soshin HYB0750 J16-36 GSC268-HYB0750 A114 A115 AN1977 AN1987 Nippon chemi JESD22
    Text: Freescale Semiconductor Technical Data Document Number: MDE6IC7120N Rev. 0, 10/2009 RF LDMOS Wideband Integrated Power Amplifiers The MDE6IC7120N/GN wideband integrated circuit is designed with on - chip matching that makes it usable from 728 to 768 MHz. This multi - stage


    Original     		MDE6IC7120N MDE6IC7120N/GN MDE6IC7120NR1 MDE6IC7120GNR1 J1126 Soshin HYB0750 J16-36 GSC268-HYB0750 A114 A115 AN1977 AN1987 Nippon chemi JESD22 PDF

    EMVY160ADA100MD55G

    Abstract: EMVY100ARA222MKG5S EMVY101SDA101MLH0S
    Text: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C MZA Lower Z @Endurance : 1,000 to 5,000 hours at 105C @Low impedance @For digital equipment, especially DC-DC converters @Solvent resistant type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES


    Original     		100Vdc 63Vdc) 100Vdc) 120Hz) mi55G EMVY500ADA100MF55G EMVY500ADA220MF55G EMVY500ADA330MF80G EMVY500ADA470MF80G EMVY160ADA100MD55G EMVY100ARA222MKG5S EMVY101SDA101MLH0S PDF

    JA02

    Abstract: EMVY160
    Text: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C MZA lower Z MVZ @Expand up to F18 case size @Expand up to 100Vdc @Low impedance, 105C 1,000 to 5,000-hours-life @For digital equipment, especially DC-DC converters and VRM @Solvent-proof type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES


    Original     		100Vdc 000-hours-life 63Vdc) 100Vdc) 120Hz) EMVY500ADA4R7ME55G EMVY500ADA100MF55G EMVY500ADA220MF55G JA02 EMVY160 PDF

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FL 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		T1G4020036-FL T1G4020036-FL PDF

    ATC600S3R0

    Abstract: ATC600S0R3 ATC600S0R2 37C0064
    Text: T1G6003028-FL 30W, 28V, DC – 6 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers Jammers Product Features


    Original     		T1G6003028-FL T1G6003028-FL ATC600S3R0 ATC600S0R3 ATC600S0R2 37C0064 PDF

    Untitled

    Abstract: No abstract text available
    Text: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C MZA Lower Z @Endurance : 1,000 to 5,000 hours at 105C @Low impedance @For digital equipment, especially DC-DC converters @Solvent resistant type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES


    Original     		100Vdc 63Vdc) 100Vdc) 120Hz) 822MMN0S EMVY500ADA1R0MD55G EMVY500ADA2R2MD55G EMVY500ADA3R3MD55G EMVY500ADA4R7ME55G PDF

    mvs 100

    Abstract: EKZH 1001N CE692 EMVE160ADA100MD55G EGPA250E562MM35S EMKB401ADA3R3MJA0G EKZH250E151MF11D e55 f55 f61 EKMA160
    Text: アルミ電解コンデンサ CAT.No.1001N 新しい品番体系に移行させて頂きました。 ホームページ上で新旧品番の照会をして頂くことができます。 こちらからアクセスして頂けます。 目 次 製品検索


    Original     		1001N mvs 100 EKZH 1001N CE692 EMVE160ADA100MD55G EGPA250E562MM35S EMKB401ADA3R3MJA0G EKZH250E151MF11D e55 f55 f61 EKMA160 PDF

    EMVY250SSS222MLN0S

    Abstract: EMVY6R3SSS682MLN0S JA02 EMVY250ADA 10MF EMVY6R3ADA220MD55G EMVY6R3ADA330ME55G EMVY350ADA4R7MD55G EMVY500ADA221MJA0G EMVY250ADA471MJA0G
    Text: SURFACE MOUNT ALUMINUM ELECTROLYTIC CAPACITORS Low impedance, 105C MZA Lower Z @Endurance : 1,000 to 5,000 hours at 105C @Low impedance @For digital equipment, especially DC-DC converters @Solvent-proof type except 80 & 100Vdc see PRECAUTIONS AND GUIDELINES


    Original     		100Vdc 63Vdc) 100Vdc) 120Hz) 10DA2R2MD55G EMVY500ADA3R3MD55G EMVY500ADA4R7ME55G EMVY500ADA100MF55G EMVY500ADA220MF55G EMVY250SSS222MLN0S EMVY6R3SSS682MLN0S JA02 EMVY250ADA 10MF EMVY6R3ADA220MD55G EMVY6R3ADA330ME55G EMVY350ADA4R7MD55G EMVY500ADA221MJA0G EMVY250ADA471MJA0G PDF

    MRFE6S9045NR1

    Abstract: ATC 221 Chemi-Con DATE CODES Nippon Chemi-Con LABEL A114 A115 C101 JESD22 MRF6S9045N MRF6S9045NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9045N Rev. 4, 8/2008 MRF6S9045NR1 replaced by MRFE6S9045NR1. Refer to Device Migration PCN12895 for more details. MRF6S9045NBR1 no longer manufactured. RF Power Field Effect Transistors ARCHIVE INFORMATION


    Original     		MRF6S9045N MRF6S9045NR1 MRFE6S9045NR1. PCN12895 MRF6S9045NBR1 MRF6S9045NBR1 MRFE6S9045NR1 ATC 221 Chemi-Con DATE CODES Nippon Chemi-Con LABEL A114 A115 C101 JESD22 MRF6S9045N PDF

    mosfet j133

    Abstract: MRFE6S9045NR1 J133 mosfet ALT1110 A113 A114 A115 Nippon chemi ATC100B470JT500XT C101
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9045N Rev. 0, 10/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRFE6S9045NR1 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this


    Original     		MRFE6S9045N MRFE6S9045NR1 mosfet j133 MRFE6S9045NR1 J133 mosfet ALT1110 A113 A114 A115 Nippon chemi ATC100B470JT500XT C101 PDF

    Untitled

    Abstract: No abstract text available
    Text: T1G4020036-FS 2 x 120W Peak Power, 2 x24W Average Power, 36V DC – 3.5 GHz, GaN RF Power Transistor Applications • • • • • • Military radar Civilian radar Professional and military radio communications Test instrumentation Wideband or narrowband amplifiers


    Original     		T1G4020036-FS T1G4020036-FS PDF