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    th 2190

    Abstract: MRF6S21050LR3 MRF6S21050L NIPPON CAPACITORS MRF6S21050L BASE TH 2190 Transistor 400S A114 A115 C101
    Text: MRF6S21050L Rev. 0, 3/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


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    MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 MRF6S21050LR3 th 2190 MRF6S21050L NIPPON CAPACITORS MRF6S21050L BASE TH 2190 Transistor 400S A114 A115 C101 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to


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    MRF6S27050H MRF6S27050HR3 MRF6S27050HSR3 MRF6S27050HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S23140HR3 MRF6S23140HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2300 to


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    MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140HR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 3, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


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    MRF6P23190H MRF6P23190HR6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21050L Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110


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    MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 MRF6S21050LR3 PDF

    nippon capacitors

    Abstract: MRF6S23140H j727
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23140HR3 MRF6S23140HSR3 Designed for CDMA base station applications with frequencies from 2300 to


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    MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140H nippon capacitors j727 PDF

    NIPPON CAPACITORS

    Abstract: j668
    Text: MRF6S21050L Rev. 0, 3/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


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    MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 NIPPON CAPACITORS j668 PDF

    2508051107Y0

    Abstract: NIPPON CAPACITORS T491D226K025AT A114 A115 AN1955 C101 JESD22 MRF6P24190HR6 GRM55DR61H106KA88B
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 2, 4/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.


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    MRF6P24190H MRF6P24190HR6 2508051107Y0 NIPPON CAPACITORS T491D226K025AT A114 A115 AN1955 C101 JESD22 MRF6P24190HR6 GRM55DR61H106KA88B PDF

    250GX-0300-55-22

    Abstract: AN1955 JESD22-A114 MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 j686 CRC120610R0FKEA Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23100H Rev. 2, 12/2008 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S23100HR3 MRF6S23100HSR3 Designed for CDMA base station applications with frequencies from 2300 to


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    MRF6S23100H MRF6S23100HR3 MRF6S23100HSR3 MRF6S23100HR3 250GX-0300-55-22 AN1955 JESD22-A114 MRF6S23100H MRF6S23100HSR3 j686 CRC120610R0FKEA Nippon capacitors PDF

    NIPPON CAPACITORS

    Abstract: 1825 - 0148
    Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9200LR3 MRF9200LSR3 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these


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    MRF9200LR3 MRF9200LSR3 NIPPON CAPACITORS 1825 - 0148 PDF

    k 2645 MOSFET

    Abstract: K 2645 transistor C1825C103J1RAC TRANSISTOR MOSFET 2645 J204 mosfet j142 transistor d 2645 p 01 k 2645 A114 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P27160H Rev. 2, 12/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


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    MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor C1825C103J1RAC TRANSISTOR MOSFET 2645 J204 mosfet j142 transistor d 2645 p 01 k 2645 A114 C101 PDF

    GRM55DR61H106KA88B

    Abstract: 2508051107Y0 NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P23190HR6 J3001
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 2, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


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    MRF6P23190H MRF6P23190HR6 GRM55DR61H106KA88B 2508051107Y0 NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P23190HR6 J3001 PDF

    NIPPON CAPACITORS

    Abstract: capacitor 1825 2508051107Y0 465B A114 A115 AN1955 JESD22 MRF9200L MRF9200LR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF9200L Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9200LR3 MRF9200LSR3 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these


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    MRF9200L MRF9200LR3 MRF9200LSR3 MRF9200LR3 NIPPON CAPACITORS capacitor 1825 2508051107Y0 465B A114 A115 AN1955 JESD22 MRF9200L PDF

    J673

    Abstract: J701 nippon capacitors 465B A114 A115 C101 JESD22 MRF6S23140HR3 MRF6S23140HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23140HR3 MRF6S23140HSR3 Designed for CDMA base station applications with frequencies from 2300 to


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    MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140HR3 J673 J701 nippon capacitors 465B A114 A115 C101 JESD22 MRF6S23140HSR3 PDF

    nippon capacitors

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 0, 1/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S23140HR3 MRF6S23140HSR3 Designed for 802.16 WiBro and dual mode applications with frequencies


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    MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140H nippon capacitors PDF

    capacitor 1825

    Abstract: Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600


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    MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085H capacitor 1825 Nippon capacitors PDF

    j655

    Abstract: J691 2508051107Y0 400S A114 A115 AN1955 JESD22 MRF7S38040HR3 MRF7S38040HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S38040H Rev. 0, 8/2007 RF Power Field Effect Transistors MRF7S38040HR3 MRF7S38040HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for WiMAX base station applications with frequencies up to


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    MRF7S38040H MRF7S38040HR3 MRF7S38040HSR3 MRF7S38040HR3 j655 J691 2508051107Y0 400S A114 A115 AN1955 JESD22 MRF7S38040HSR3 PDF

    k 2645 MOSFET

    Abstract: K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22
    Text: Freescale Semiconductor Technical Data MRF6P27160H Rev. 0, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for N - CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


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    MRF6P27160H MRF6P27160HR6 k 2645 MOSFET K 2645 transistor NIPPON CAPACITORS transistor d 2645 z33 vishay A114 A115 AN1955 C101 JESD22 PDF

    K 2645 schematic

    Abstract: p 01 k 2645 K 2645 transistor A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600


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    MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 K 2645 schematic p 01 k 2645 K 2645 transistor A114 A115 AN1955 C101 JESD22 MRF6S27085H PDF

    NIPPON CAPACITORS

    Abstract: 2506033007Y0 2508051107Y0 465B AN1955 MRF9200LR3 MRF9200LSR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9200L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF9200LR3 MRF9200LSR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


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    MRF9200L/D MRF9200LR3 MRF9200LSR3 228Affirmative MRF9200LR3 NIPPON CAPACITORS 2506033007Y0 2508051107Y0 465B AN1955 MRF9200LSR3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 3, 2/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.


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    MRF6P24190H MRF6P24190HR6 PDF

    465B

    Abstract: A114 A115 C101 JESD22 MRF6S23140HR3 MRF6S23140HSR3 J733
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S23140H Rev. 2, 12/2008 RF Power Field Effect Transistors MRF6S23140HR3 MRF6S23140HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2300 to


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    MRF6S23140H MRF6S23140HR3 MRF6S23140HSR3 MRF6S23140HR3 465B A114 A115 C101 JESD22 MRF6S23140HSR3 J733 PDF

    j6808

    Abstract: A114 A115 AN1955 C101 JESD22 MRF6S27050HR3 MRF6S27050HSR3 J7-73 Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 0, 11/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to


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    MRF6S27050H MRF6S27050HR3 MRF6S27050HSR3 MRF6S27050HR3 j6808 A114 A115 AN1955 C101 JESD22 MRF6S27050HSR3 J7-73 Nippon capacitors PDF

    K 2645 schematic circuit

    Abstract: DBD16 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to


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    MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 K 2645 schematic circuit DBD16 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H PDF