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    MC28F008-10/B Rochester Electronics LLC EEPROM, Visit Rochester Electronics LLC Buy
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    EP1800GM-75/B Rochester Electronics LLC EP1800 - Classic Family EPLD Visit Rochester Electronics LLC Buy
    X28C010FI-15 Rochester Electronics LLC EEPROM Visit Rochester Electronics LLC Buy
    ER2051HR-006 Rochester Electronics LLC ER2051 - EEPROM Visit Rochester Electronics LLC Buy
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    Elba Lubrication Inc EV-DIELECTRIC-GREASE

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    Xeltek Inc Electric Tape in Feeder (8 mm)

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    ELECTRIC Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APRIL Electric Imp RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD BREAKOUT APRIL FOR IMP Original PDF
    FIELDBUS GATEWAY Electric Imp Networking Solutions - Gateways, Routers - GATEWAY 802.11 MODBUS ETHERNET Original PDF
    IMP001-US-B Electric Imp RF Receiver, Transmitter, and Transceiver Finished Units, RF/IF and RFID, IMP 802.11B/G/N NODE CARD Original PDF
    IMP001-US-R-ENG Electric Imp RF Receiver, Transmitter, and Transceiver Finished Units, RF/IF and RFID, IMP 802.11B/G/N NODE CARD Original PDF
    IMP002-S-EU Electric Imp RF Receiver, Transmitter, and Transceiver Finished Units, RF/IF and RFID, IMP MOD 802.11B/G/N EU/AUS/NZ Original PDF
    IMP002-S-US-TR Electric Imp RF Receiver, Transmitter, and Transceiver Finished Units, RF/IF and RFID, IMP 802.11B/G/N NODE MODULE Original PDF
    IMPEXPLORER KIT Electric Imp RF/IF and RFID - RF Evaluation and Development Kits, Boards - IMPEXPLORER DEVELOPER KIT Original PDF

    ELECTRIC Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: TMS28C64 65,536-BIT ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY • Organization 8K x 8 • Single 5-V Power Supply ± 10% N AND J PACKAGES (TOP VIEW } Q 1 U A 12C 2 A7C 3 Compatible with Existing 64K M O S EPRO M s. PRO M s. R O M s, and EEPR O M s


    OCR Scan     		PDF TMS28C64 536-BIT

    ISS226

    Abstract: ISV99 2sk117 ISV128 2sk toshiba 302V marking A3 amplifier 2SK30ATM u marking amplifier
    Text: TOSHIBA {DI SCRE TE /O PT O} Sb D E ^ T D T T E S D □□□7103 / Í 9097250 '-L ^ TOSHIBA DI S C R E T E /O P T O 5bC 0 7 T Q 3 D'^. ¿ . c; . . V FET Type Application Electrical characteristic (Ta *= 25°C) V d sx V V * * gdo grd * Ig , I d * (mA) Po(mW)


    OCR Scan     		PDF 2SK208 2SK30ATM 2SK209 2SK210 2SK211 2SK117 2SK161 2SK241 ISV128 ISS226 ISV99 2sk toshiba 302V marking A3 amplifier 2SK30ATM u marking amplifier

    1N4447

    Abstract: No abstract text available
    Text: TYPES 1N4148. 1N4149, IN U M i : ^ 4 i9 SILICON SWITCHING DIODES B U L L E T IN NO. D L-S 739269, O C T O B E R 1 9 6 6 - R E V I S E D M A R C H 1973 FA ST S W IT C H IN G D IO D E S • Rugged Double-Plug Construction Electrical Equivalents: 1N4148 . . . 1N914 . .


    OCR Scan     		PDF 1N4148. 1N4149, 1N4148 1N914 1N4531 1N4447 1N916A 1N4149 1N916 1N4448 1N4447

    2N3051

    Abstract: 2N3050 2N2412 2n3049
    Text: TYPES 2N3049, 2N3050, 2N3051 DUAL P-N-P SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 7 4 2 3 0 , A U G U S T 1 9 6 3 - R E V I S E D A P H IL 1 96 7 DESIGNED FOR DIFFERENTIAL AMPLIFIERS, LOW-NOISE AMPLIFIERS, AND LOW-LEVEL SWITCHING • Each Triode Electrically Similar to 2N2411 and 2N2412 Transistors


    OCR Scan     		PDF 2N3049, 2N3050, 2N3051 2N2411 2N2412 2N3050 2n3049

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC58V64FT/DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M X 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V64FT/DC is a single 3.3-V 64-Mbit (69,206,016-bit) NAND electrically erasable and programmable read-only memory (NAND E2PROM) organized as 528 bytes X 16 pages X 1024 blocks.


    OCR Scan     		PDF TC58V64FT/DC 64-MBIT TC58V64FT/DC 016-bit) 528-byte 44/40-P-400-0

    Untitled

    Abstract: No abstract text available
    Text: CONVERSION CHART I INCH MM .002 0,05 .010 0.25 .020 0.51 .030 0.76 SPECIFICATIONS: I » X t O • 1 — < •—i • => 1.09 o o .020 12X < .100 2,54 .130 3.30 .172 4,37 .187 4,75 .200 5,08 .210 5,33 .216 5,49 .340 ELECTRICAL' CONTACT RATING: 0.4 VA a 20 VDC OR PEAK AC


    OCR Scan     		PDF CAD080992C

    Untitled

    Abstract: No abstract text available
    Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC57256AD-12,-120,-150 32 , 768 W O R D x 8 B I T C M O S UV ERASABLE A N D ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY IDESCRIPTIONI The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electri­


    OCR Scan     		PDF TC57256AD-12 TC57256AD 120ns, 30mA/8 TC57256AD.

    TC57256AD

    Abstract: No abstract text available
    Text: TOSHIBA TC57256AD-12 TC57256AD-120 TC57256AD-150 SILICON STACKED GATE CMOS 32,768 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY Description The TC57256AD is a 32,768 word x 8 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It


    OCR Scan     		PDF TC57256AD-12 TC57256AD-120 TC57256AD-150 TC57256AD 30mA/8 TC57256AD.

    2N2389

    Abstract: 2N2390 2N1711 Texas Instruments TI424
    Text: TYPES 2N2389, 2N2390 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 4 6 0 2 7 , O C T O B E R 1 9 6 4 FOR GENERAL PURPOSE AMPLIFIER AND SWITCHING APPLICATIONS FROM <0.1 ma to >150 mo, dc to 30 Me Formerly TI424 and TI425 * Electrically Similar to 2N1613 and 2N1711


    OCR Scan     		PDF 2N2389, 2N2390 TI424 TI425 2N1613 2N1711 2N2389 2N1711 Texas Instruments

    modular jack RJ45 8P8C

    Abstract: No abstract text available
    Text: 3 .2 5 + 0 .2 5 if C\l 1 6 .1 5 + 0 .2 5 LED 1 CN LED 2 i 0 .5 0 o o O O m • _l o _l o CL ro CL CN MAX. O +l lO O +l CL lO CO m D CN o ELECTRICAL CIRCUIT lO 0 3 .2 0 +l t AMP LOGO RED/GREEN COLOR LED 00 ro i Q_ >- CL o i i\ CÛ □ t i 1 o lO i ro CL o


    OCR Scan     		PDF

    ic 748

    Abstract: 2SC4688
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SC4688 Unit in ram Weight: ELECTRICAL CHARACTERISTICS CHARACTERISTIC Ta=25°C SYMBOL Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage


    OCR Scan     		PDF 2SC4688 ic 748 2SC4688

    Untitled

    Abstract: No abstract text available
    Text: TMS28F040 4 194 304-BIT FLASH ELECTRICALLY ERASABLE PROGRAMMABLE READ-ONLY MEMORY SMJS040-DECEMBER 1992 N PACKAGET Organization . . . 512K x 8 Separately Erasable 32K Byte Blocks Two Power Supplies 5 V and 12 V 100% TTL-Level Control Inputs Fully Automated On-Chip Erase and Byte


    OCR Scan     		PDF TMS28F040 304-BIT SMJS040-DECEMBER A0-A18 32-pin 40-pin

    Untitled

    Abstract: No abstract text available
    Text: KV 1 8 4 5 E S P E C I F I C A T I ON TABLE OF CONTENTS 1. PURPOSE 2 . TOKO PART NUMBER 3. APPLICATIONS 4 . STRUCTURE 5 . PACKAGE OUTLINE 6. PIN LAYOUT SIG N ATU RE DATE 7 . PACKAGE OUTLINE DIM ENSIONS/ Drawn By MARKING 8. ABSOLUTE MAXIMUM RATINGS 9. ELECTRICAL CHARACTERISTICS


    OCR Scan     		PDF DB3-K156 diodeKV1845E. KV1845E

    tc58v32ft

    Abstract: TC58V32
    Text: IN TEG RA TED CIRCUIT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58V32 FT TO SHIBA TECHNICAL DATA SILICON GATE CMOS 32 MBIT 4 M X 8 BITS CMOS NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58V32FT device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and


    OCR Scan     		PDF TC58V32 TC58V32FT 528-byte, 528-byte TC58V32FT--

    TC5716200D-150

    Abstract: 5716200D
    Text: TOSHIBA TC5716200D-150, -200 SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY D escription T heT C 5716200D is a 16,777,216 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It is


    OCR Scan     		PDF TC5716200D-150, 5716200D TC5716200D 42-pin 150ns/200ns 60rrvV6 5716200D TC5716200D. TC5716200D-150

    Untitled

    Abstract: No abstract text available
    Text: MCT2, MCT2E OPTOCOUPLERS D 2 7 3 1 , MARCH 1 9 8 3 COMPATIBLE W ITH STANDARD TTL INTEGRATED CIRCUITS Gallium Arsenide Diode Infrared Source Optically Coupled to a Silicon N-P-N Phototransistor High-Voltage Electrical Isolation or 3 .5 5 -k V Rating 1.5 -kV


    OCR Scan     		PDF

    1S1585

    Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
    Text: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80


    OCR Scan     		PDF OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TOSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58A040 F SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory


    OCR Scan     		PDF TC58A040 256-bit TC58A040F--29 OP28-P-450 TC58A040F--

    1N5614 JANTX

    Abstract: No abstract text available
    Text: LOW VOLTAGE RECTIFIERS Axial Leaded • Hermetic 70ns-2000ns Recovery • JANTX • JANTXV ELECTRICAL CHARACTERISTICS AND MAXIMUM RATINGS Part Number Working Reverse Voltage Vrwm Average Rectified Current (1) (to) Reverse Current @ Vrwm Forward Voltage (lr)


    OCR Scan     		PDF 70ns-2000ns 1N5415 1N5416 1N5417 1N5418 1N5419 1N5420 1N5550 1N5551 1N5552 1N5614 JANTX

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TLOU262,TLSU262,TLYU262 TENTATIVE TOSHIBA InGaAfP LED TLOU262, TLSU262, TLYU262 PANEL CIRCUIT INDICATOR • • • • • • • InGaA£P LED All Plastic Mold Type Colorless Clear Lens Lineup : 3 Colors Red, Orange, Yellow Suitable for High-Brightness and Less Electricity


    OCR Scan     		PDF TLOU262 TLSU262 TLYU262 TLOU262, TLSU262,

    thyristor st 103

    Abstract: SH30J13A L13A SH30J TOSHIBA THYRISTOR SH30F SH30F13A
    Text: SH3 KD,F,G,H,J,L 13A HIGH-SPEED THYRISTOR SILICON DIFFUSED TYPE HIGH SPEED (FORKLIFT, ELECTRIC-CAR, CHOPPER, INVERTER) APPLICATIONS. Unit in m m FEATURES: . Repetitive Peak Off-State Repetitive Peak Reverse . Average On-State . Turn-Off . Gate =200 ^ 800v


    OCR Scan     		PDF 15/is 00A//iS 00V//is G-236. SH30D13A SH30F13A SH30G13A SH30H13A SH30J13A SH30L13A thyristor st 103 L13A SH30J TOSHIBA THYRISTOR SH30F

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TENTATIVE TC58V32DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 M BIT 4 M x 8 BITS CMOS NAND E2PROM DESCRIPTION The TC58V32DC device is a single 3.3-volt 33 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 byte X 16 pages X 512 blocks.


    OCR Scan     		PDF TC58V32DC TC58V32DC 528-byte, 528-byte C-22A

    1N4536

    Abstract: 1n4531
    Text: TYPES 1N4531 THRU 1N4534, 1N4536 SILICON SWITCHING DIODES B U L L E T I N N O . D L -S 7 3 9 7 7 4 , M A R C H 1 9 6 7 - R E V I S E D M A R C H 1 9 7 3 FAST SWITCHING DIODES • Rugged Double-Plug Construction Electrical Equivalents 1N4531 . . . 1N4148 . . . 1N914


    OCR Scan     		PDF 1N4531 1N4534, 1N4536 1N4531 1N4148 1N914 1N4533. 1N4152 1N3605 1N4532

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DIS CR ET E/OPT O} 9097250 TOSHIBA <D I S C R E T E / O P T O Silicon Epitaxial Planar Type Variable Capacitance Diode 6 7 r. 0 3 3 0 6 n r ~ o 7-/9 1S2094 UHF, VHF AFC APPLICATIONS. Unit in mm ELECTRICAL CHARACTERISTICS Ta=25°C) CHARACTERISTIC


    OCR Scan     		PDF 1S2094 50MHz