LX5121
Abstract: LX5121CDB LX5121CDBT UCC5621
Text: LIN D O C #: 5121 TM UltraMAX ULTRA 27-L I N E , P L U G T H E I N F I N I T E P O W E R O F I P N N O VA T I O N AND R O D U C T I O N DESCRIPTION P LAY SCSI T ERMINATOR D A T A S H E E T K E Y F E AT U R E S ances. Frequently, this situation is not controlled by the peripheral or host designer and,
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LX5121
LX5121,
LX5121.
LX5121CDB
LX5121CDBT
UCC5621
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Untitled
Abstract: No abstract text available
Text: 24 ChipInductors-1008HSSeries 2520 C o ilc ra ft “ H S ” s e rie s c h ip in d u c to rs h a v e b e e n d e s ig n e d e s p e c ia lly fo r th e n e e d s o f to d a y ’s high fre q u e n cy designer. T h e ir ce ra m ic c o n s tru c tio n d e liv
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ChipInductors-1008HSSeries
1008H
S-100T
S-120T
S-150T
S-180T
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TP23P06
Abstract: MTP23P06
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TP23P06 P o w e r Field E ffe c t T ra n sis to r Motorola Preferred Device P -C h a n n e l E n h a n c e m e n t-M o d e S ilic o n G a te TMOS POWER FET 23 AMPERES T h is T M O S P o w e r F E T is d e s ig n e d f o r h ig h s p e e d p o w e r
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TP23P06
b3b7254
TP23P06
MTP23P06
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35N06
Abstract: MTM35N06 TH35N06 35N05 MTM35N05 TH35N05 MTH35N05
Text: MOTOROLA • SEMICONDUCTOR m h h h h TECHNICAL DATA MTH35N05 MTH35N06 MTM35N05 MTM35N06 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS T h e s e T M O S P o w e r F E T s a re d e s ig n e d fo r h ig h s p e e d p o w e r
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P8N50E
Abstract: 8N50E
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M T P 8N 50E TM O S E -F E T ™ High E nergy P o w er FET N-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d h ig h v o lta g e T M O S E - F E T is d e s ig n e d to w ith s ta n d high e ne rg y in th e a va la n ch e m o de a nd sw itch efficiently.
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MTP8N50E
P8N50E
8N50E
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TP8N10
Abstract: TP8N08 8n10 MTP8N08 8N10 mosfet MTP8N10 tp8n1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP8N08 MTP8N10 P o w e r Field E ffe c t T ra n sisto r N -C h ann el E n h an cem en t-M od e S ilic o n G ate T M O S T M O S PO W ER FETs 8 AM PERES rDS on = 0.5 O H M 80 and 100 V O LTS T h e s e T M O S P o w e r F E T s a r e d e s i g n e d f o r m e d i u m v o lt a g e ,
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MTP8N08
MTP8N10
O-220AB
TP8N10
TP8N08
8n10
8N10 mosfet
MTP8N10
tp8n1
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PDF
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MTP8N10E
Abstract: No abstract text available
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Designer's Data Sheet T M O S IV P o w e r Field E ffe c t Transistor N -C h an n el E n h an cem en t-M od e S ilic o n Gate T M O S P O W E R FETs 8 AMPERES T h is a d v a n c e d " E " s e rie s o f T M O S p o w e r M O S F E T s is d e s ig n e d to w ith s ta n d h ig h
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MTP8N10E
MTP8N10E
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TP10N10
Abstract: mtp10n08 10n08 mtp10n10
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate T M O S T M O S P O W E R FETs 10 A M P E R E S T h e se T M O S P o w e r FETs are d e s ig n e d fo r m e d iu m v o lta g e ,
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MTP10IM08,
TP10N10
mtp10n08
10n08
mtp10n10
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5N05
Abstract: 5n06 mtp5n05
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MTP5N05 MTP5N06 Designer's Data Sheet P o w er Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TM OS T M O S P O W E R FETs 5 AM PERES T h e s e T M O S P o w e r FETs a re d e s ig n e d f o r h ig h s p e e d p o w e r
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MTP5N05
5N05
5n06
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MTP25N05E
Abstract: No abstract text available
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA Designer's Data Sheet T M O S IV P o w e r Field E ffe c t T ransistor N -Channel Enhancem ent-M ode Silico n G ate T M O S P O W E R FETs 25 A M P E R E S T h is a d v a n c e d " E " s e rie s o f T M O S p o w e r M O S F E T s is d e s ig n e d to w ith s ta n d h ig h
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21A-04
O-220AB
MTP25N05E
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TP2P45
Abstract: TP2P50 MTP2P45 2P45
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTM2P45 MTM2P50 MTP2P45 MTP2P50 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r P-Ch annel Enh an cem en t-M ode S ilic o n G ate T M O S T h e s e T M O S P o w e r F E T s a re d e s ig n e d fo r m e d iu m v o lta g e ,
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MTM2P45
MTM2P50
MTP2P45
MTP2P50
T0-204AA
TP2P45
TP2P50
2P45
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet TM O S IV P o w er Field E ffe c t T ran sistor N-Channel Enhancem ent-M ode Silicon Gate T M O S P O W E R FETs 10 A M P E R E S T h is a d v a n c e d " E " s e rie s o f T M O S p o w e r M O S F E T s is d e s ig n e d to w ith s ta n d h ig h
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25p05
Abstract: TH25P06 25P06 MTH75 25p0 MTH25P06
Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA MTH25P05 MTH25P06 MTM25P05 MTM25P06 Designer's Data Sheet Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TM OS TMOS POWER FETs 25 AMPERES rDS on = 0.14 OHM 50 and 60 VOLTS T h e s e T M O S P o w e r F E T s a re d e s ig n e d fo r h ig h s p e e d p o w e r
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100CC
Y145M
25p05
TH25P06
25P06
MTH75
25p0
MTH25P06
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTP3N25E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TP3N25E TMOS E-FET ™ Pow er Field E ffect Transistor M o to r o la P r e f e r r e d D e v ic e N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 3.0 AMPERES
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MTP3N25E/D
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12N05
Abstract: No abstract text available
Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M TM 12N 05 M TP12N 05 M TP12N 06 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS T M O S P O W E R FETs 12 A M P E R E S T he se T M O S P o w e r F E T s are d e sig n e d for lo w voltage, high
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TP12N
O-204AA
21A-04
T0220AB
12N05
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TP4N50
Abstract: N50E
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M T P 4 N 5 0E TM O S E -FE T ™ High E nergy P o w er FET M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d h ig h v o lta g e T M O S E - F E T is d e s ig n e d to
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TP4N50E
TP4N50
N50E
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2N6766
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N 6766 Designer's Data Sheet Pow er Field E ffe ct Tran sisto r N -C h a n n e l E n h a n c e m e n t-M o d e S ilic o n G a te T M O S TM O S POWER FET 30 AMPERES This TM O S Power FET is designed fo r m e diu m vo ltag e , high speed p o w e r sw itch in g a pp licatio n s
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2N6766
97A-02
TQ-204AE
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3n120e
Abstract: mtp3n
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP3N120E T M O S E -FE T P o w er Field E ffe c t T ran sisto r M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d h ig h - v o lt a g e T M O S E - F E T is d e s ig n e d to
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MTP3N120E
3n120e
mtp3n
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MTP3055EL
Abstract: 3055el TP3055EL TP3055E
Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M TP 3055E L Designer's Data Sheet T M O S IV P o w er Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode Silicon G ate T h is a d v a n c e d E-FET is a T M O S p o w e r M O S F E T d e s ig n e d to w ith s ta n d h ig h e n e rg y in
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3055E
MTP3055EL
21A-04
TQ-220AB
MTP3055EL
3055el
TP3055EL
TP3055E
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2N6764
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TMOS TM O S POWER FET 38 AMPERES T h is T M O S P o w e r FET is d e s ig n e d f o r lo w v o lta g e , h ig h s p e e d p o w e r s w itc h in g a p p lic a tio n s
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Y145M.
97A-02
2N6764
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Untitled
Abstract: No abstract text available
Text: M O TO ROLA SEM IC O N D U C T O R TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N -C h a n n e l E n h a n c e m e n t-M o d e S ilic o n G a te T M O S TM O S POWER FET 15 AMPERES This TM O S Pow er FET is designed fo r m e d iu m voltag e , high
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MTP15N15
21A-04
O-220AB
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Untitled
Abstract: No abstract text available
Text: Designers Sample Kits SMD Resistors Ordering information for designers sample kits T h i c k F ilm T e c h n o lo g y , F la t C h ip s S e r ie s S iz e T o l. Range R. V a lu e s P ie c e s / V a lu e O r d e r in g C o d e 111-1 M l >, E24 145 100 3338-073-00098
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0603IA
9C12063AxxxxF
38052AxxxxJ
9CQ8052AxxxxF
ARC241
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MDA980-1
Abstract: MDA990-6 MDA990-1 MDA980-6 dioda bridge pj 66 diode pj 50 diode pj 56 diode dioda 30 Ampere dioda rectifier
Text: MDA980-1 n, MDA980-6 MDA990-1 thru MDA990-6 Designers Data Sheet S IN G L E P H A S E F U L L - W A V E B R ID G E I N T E G R A L D IO D E A S S E M B L I E S 12 and 30 A M PERES 50 t h r u 600 V O LTS . . . passivated, diffused silicon dice interconnected and transfer
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MDA980-1
MDA980-6
MDA990-1
MDA990-6
MDA990
MDA990-6
dioda bridge
pj 66 diode
pj 50 diode
pj 56 diode
dioda 30 Ampere
dioda rectifier
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40N20
Abstract: tm40n20
Text: M O TO ROLA SEM IC O N D U C T O R TECHNICAL DATA Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS T M O S P O W E R FET 40 AM PERES T h is T M O S P o w e r FET is d e s ig n e d f o r h ig h s p e e d p o w e r s w itc h
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97A-02
TQ-204AE
40N20
tm40n20
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