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    8N10 Search Results

    8N10 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NP28N10SDE-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    SiT8008BC-23-18N-100.000000 SiTime 1 to 110 MHz, Low Power Oscillator Datasheet
    SIT8008BI-21-18N-106.600000 SiTime 1 to 110 MHz, Low Power Oscillator Datasheet
    SiT8008BI-71-18N-100.000000 SiTime 1 to 110 MHz, Low Power Oscillator Datasheet
    SiT1408BC-11-18N-1.000000 SiTime Low Power Active Resonator Drop-In Replacement for 4-pin SMD XTAL Datasheet
    SF Impression Pixel

    8N10 Price and Stock

    Susumu Co Ltd RG1608N-103-W-T1

    RES SMD 10K OHM 0.05% 1/10W 0603
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    DigiKey RG1608N-103-W-T1 Reel 98,000 1,000
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    Newark RG1608N-103-W-T1 Cut Tape 75 1
    • 1 $0.863
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    New Advantage Corporation RG1608N-103-W-T1 2,000 1
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    • 10000 $0.3733
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    Susumu Co Ltd RG1608N-104-D-T5

    RES SMD 100K OHM 0.5% 1/10W 0603
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    DigiKey RG1608N-104-D-T5 Cut Tape 3,295 1
    • 1 $0.35
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    RG1608N-104-D-T5 Digi-Reel 3,295 1
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    • 100 $0.1769
    • 1000 $0.11659
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    Torex Semiconductor LTD XC6118N10AMR-G

    IC SUPERVISOR 1 CHANNEL SOT25
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    DigiKey XC6118N10AMR-G Digi-Reel 3,000 1
    • 1 $1.16
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    XC6118N10AMR-G Reel 3,000 3,000
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    XC6118N10AMR-G Cut Tape 3,000 1
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    Avnet Silica XC6118N10AMR-G 17 Weeks 3,000
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    PanJit Group PSMN028N10NS2_R2_00201

    100V/ 2.8M / TOLL FOR INDUSTRAIL
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    DigiKey PSMN028N10NS2_R2_00201 Cut Tape 1,980 1
    • 1 $4.62
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    NIDEC Components 8N1021-Z

    SWITCH PUSHBUTTON SPDT 6A 125V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 8N1021-Z Bulk 1,167 1
    • 1 $8.59
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    Newark 8N1021-Z Bulk 17 1
    • 1 $9.62
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    • 100 $7.73
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    Find more 8N10 price and stock on Findchips.com

    8N10 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    8N1011-Z Copal Electronics Pushbutton Switches, Switches, SWITCH PUSHBUTTON SPDT 6A 125V Original PDF
    8N1012-Z Copal Electronics Pushbutton Switches, Switches, SWITCH PUSHBUTTON SPDT 6A 125V Original PDF
    8N1021-Z Copal Electronics Pushbutton Switches, Switches, SWITCH PUSHBUTTON SPDT 6A 125V Original PDF
    8N1022-Z Copal Electronics Pushbutton Switches, Switches, SWITCH PUSHBUTTON SPDT 6A 125V Original PDF

    8N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    8N100

    Abstract: No abstract text available
    Text: IXGA 8N100 IXGP 8N100 IGBT VCES = 1000 V = 16 A IC25 VCE sat = 2.7 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V I C25


    Original     		PDF 8N100 O-220AB O-263 8N100

    8N100

    Abstract: MJ 800
    Text: IXGA 8N100 IXGP 8N100 IGBT VCES = 1000 V = 16 A IC25 VCE sat = 2.7 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


    Original     		PDF 8N100 O-220AB O-263 8N100 MJ 800

    Untitled

    Abstract: No abstract text available
    Text: IXGA 8N100 IXGP 8N100 IGBT VCES = 1000 V IC25 = 16 A VCE sat = 2.7 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original     		PDF 8N100 O-220AB O-263 728B1 123B1 728B1 065B1

    8N100

    Abstract: 8n10
    Text: IXGA 8N100 IXGP 8N100 IGBT VCES = 1000 V IC25 = 16 A 2.7 V VCE sat = Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


    Original     		PDF 8N100 8N100 O-220AB O-263 O-220 8n10

    8N100

    Abstract: UPS SIEMENS
    Text: IXGA 8N100 IXGP 8N100 IGBT VCES = 1000 V = 16 A IC25 VCE sat = 2.7 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1000 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original     		PDF 8N100 O-220AB O-263 728B1 123B1 728B1 065B1 8N100 UPS SIEMENS

    Untitled

    Abstract: No abstract text available
    Text: 8N10F7 N-channel 100 V, 0.0017 Ω typ., 8 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package Datasheet - preliminary data Features Order code VDS RDS on max ID PTOT 8N10F7 100 V 0.020 Ω 8A 3.5 W • Ultra low on-resistance


    Original     		PDF STL8N10F7 DocID025076

    200n60

    Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
    Text: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40


    Original     		PDF PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


    Original     		PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    MDM 6600

    Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
    Text: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1


    Original     		PDF 9800-OERF-007 9800-OERF-005 MDM 6600 mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    12n60c

    Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
    Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM


    Original     		PDF O-220 O-263 O-247 PLUS247 O-268 ISOPLUS247TM O-264 20N30 28N30 30N30 12n60c 60n60 igbt diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60

    Untitled

    Abstract: No abstract text available
    Text: 8N10 8A , 100V , RDS ON 48mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free SOP-8 DESCRIPTION The 8N10 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide


    Original     		PDF SSG8N10 SSG8N10 8N10SC 25-Apr-2013

    T0.8N100

    Abstract: No abstract text available
    Text: □ IXYS Advanced Technical Information 8N100 IXGP 8N100 IGBT V CES = = = ^C25 V CE sat 1000 V 16 A 2.7 V Maximum Ratings Symbol Test Conditions V CES Tj = 25°C to 150°C 1000 V VCGR Tj = 25°C to 150°C; RGE = 1 Mi2 1000 V V GES VGEM Continuous ±20


    OCR Scan     		PDF IXGA8N100 8N100 T0.8N100

    Untitled

    Abstract: No abstract text available
    Text: iliiitl Advanced Technical Information I XGA 8N100 IGBT VCES IXGP 8N100 ^C25 V Symbol U 90 CE sat 1000 V 16 A 2.7 V TO-220AB (IXGP) Test Conditions 1000 1000 V Continuous +20 V T ransient ±30 V T. =25° C 16 A T c = 90° C 8 A 32 A Tj = 25° C to 150° C


    OCR Scan     		PDF 8N100 O-220AB O-220AB O-263AA O-263

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    MPT50N06

    Abstract: 33091 MC33091 MPT50 8N10 mosfet
    Text: MOTOROLA MC33091 SEMICONDUCTOR TECHNICAL DATA Advance Information High Side TMOS Driver HIGH SIDE TMOS DRIVER The MC33091 is a high side TMOS driver designed for use in harsh automotive switching applications w hich require the capability of handling high voltages


    OCR Scan     		PDF MC33091 MC33091 MPT50N06 33091 MPT50 8N10 mosfet

    tektronix type 576 curve tracer

    Abstract: tektronix 576 curve tracer Tracer 176 MR756 2n4401 die DIODO 4001 real time application of ASTABLE mode AN915 MOTOROLA line frequency diode AN915
    Text: AN915 MOTOROLA Semiconductor Products Inc. Application Note CHARACTERIZING COLLECTOR-TO-EMITTER AND DRAIN-TO-SOURCE DIODES FOR SWITCHMODE APPLICATIONS Prepared by Al Pshaenich Motorola Inc., Semiconductor Group Phoenix, Arizona ABSTRACT Most power Darlington transistors and power MOSFETs con­


    OCR Scan     		PDF AN915 AN915/D AN915/D tektronix type 576 curve tracer tektronix 576 curve tracer Tracer 176 MR756 2n4401 die DIODO 4001 real time application of ASTABLE mode AN915 MOTOROLA line frequency diode AN915

    8B103

    Abstract: 8N1021 8a1012 SPDT TOGGLE SWITCH 125VAC 6A 8H1041 8N3021 micro switch 8A1012 8W1021 8E2011 8A1021
    Text: Honeywell MICRO SWITCH Data Sheet F 172 Second Issue Series 8 Miniature Manual Switches Description Subject to change without notice 0387 RO-HE / Printed in Belgium by Prefilm Series 8 is a line o f m in ia tu re toggle, rocker, paddle and pu sh bu t­ ton sw itches rated 6A -125V ac resistive, 3A -250V ac resistive or


    OCR Scan     		PDF -125V -250V 8Z0143 8Z0111 8Z0151 8Z0131 8B103 8N1021 8a1012 SPDT TOGGLE SWITCH 125VAC 6A 8H1041 8N3021 micro switch 8A1012 8W1021 8E2011 8A1021

    120n60b

    Abstract: 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B
    Text: Contents IGBT V CE sat 1 TO-220 TO-263 ! TO-247 (IXGP) (IXGA) ! (IXGH) max Tc=25 °C PLUS247 (IXGX) TO-268 (IXGT) TO-264 (IXGK) miniBLOC {IXGN) Page V 300 600 40 56 ► i* G H ¿',N 30 >• IXGH 28N30 60 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 3 ÍN S 0 76 * 75 *


    OCR Scan     		PDF O-220 O-263 O-247 28N30 30N30 40N30 2N100 8N100 6N100 12N10Q 120n60b 40N30BD1 32N50 7n60c 20N60BU1 40N60A B-2160 200n60 12n60c IXGH24N50B

    TP8N10

    Abstract: TP8N08 8n10 MTP8N08 8N10 mosfet MTP8N10 tp8n1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP8N08 8N10 P o w e r Field E ffe c t T ra n sisto r N -C h ann el E n h an cem en t-M od e S ilic o n G ate T M O S T M O S PO W ER FETs 8 AM PERES rDS on = 0.5 O H M 80 and 100 V O LTS T h e s e T M O S P o w e r F E T s a r e d e s i g n e d f o r m e d i u m v o lt a g e ,


    OCR Scan     		PDF MTP8N08 MTP8N10 O-220AB TP8N10 TP8N08 8n10 8N10 mosfet MTP8N10 tp8n1

    RN1Z

    Abstract: BN1243 KN1204 RN1002 RN1003 RN1004 RN1006 RN1007 8N2226 RN1011
    Text: - 324 - * 1 3 = 2 5 ^ , *EP(äTc=25‘ C m. s tt m s ä v'cBO VcEO IC(DC) Pc (V) (V) (A) (W) Pc* (W) (uk) (max) V'CB ,'Btr (V) ' Ic (A) Ib (A) 0. 005 0.00025 50 50 5 0.01 0.3 0. 005 0. 00025 50 70 5 0.01 0.3 0. 005 0. 00025 0.1 50 80 5 0.01 0.3 0. 005 0.00025


    OCR Scan     		PDF RN1002 RN1003 RN1004 RN1006 RN1007 BN1223 10K/10K RN2224 RN1224 47K/10K RN1Z BN1243 KN1204 8N2226 RN1011

    GFB7400D

    Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
    Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest


    OCR Scan     		PDF

    8n10

    Abstract: SGSP311 8n08 SEFM8N08
    Text: S G S-THOHSON 0?E- D | -7=12^237 .D01flQfl*î 7 | 73C 1 7 5 8 6 D J T*3>^~U SEFM8N08 8N10 SEFP8N08 \ ’ N-CHANNEL POWER MOS TRANSISTORS SEFP8N,° HIGH SPEED SWITCHING APPLICATIONS v DSS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field


    OCR Scan     		PDF D01flQfl* SEFM8N08 SEFM8N10 SEFP8N08 300jjs SGSP311 C-311 8n10 8n08

    8N3021

    Abstract: switch 8n3021
    Text: 8N RoHSttJfciS f í f t í R f y x ' f u/51 Standard Pushbutton Sw itches • i t s - ■Features- t t o * ' * > t t ¿ 8 , ¿ 1 0 .^ 1 s m m m ' t b V . & M i M i x


    OCR Scan     		PDF