TER22
Abstract: No abstract text available
Text: KOA SPEER ELECTRONICS, INC. SS-222 R7 AHA 1/12/04 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency
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SS-222
TER22
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tdr22
Abstract: No abstract text available
Text: KOA SPEER ELECTRONICS, INC. SS-222 R5 AHA 6/30/03 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency
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SS-222
tdr22
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TDR15
Abstract: TD18N TD68N TP82N TP68N
Text: MHL multilayer ceramic inductor features inductors • Monolithic structure provides high reliability in a wide temperature and humidity range • High quality ceramic material and unique manufacturing process provides high Q at high frequency • Standard EIA packages: 1E, 1J, 2A
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Untitled
Abstract: No abstract text available
Text: KL73 thin film inductor features • • • • • Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1E, 1J, 2A, 2B • Marking: Yellow three-figure on blue protective coating
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MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: KOA SPEER ELECTRONICS, INC. SS-203 R4 AHA 02/05/04 Thin Film Chip Inductors Type KL73 0402 CERTIFIED 1. Scope This specification applies to Thin Film Chip Inductors KL73 1E size produced by KOA Corporation. 2. Type Designation The type designation shall be the following form:
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SS-203
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KL731H
Abstract: TP33N KL731E
Text: KL73 thin film inductor features Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1H, 1E, 1J, 2A, 2B • Marking: Yellow three-figure on blue protective coating
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MIL-STD-202,
KL731H
TP33N
KL731E
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Untitled
Abstract: No abstract text available
Text: KOA SPEER ELECTRONICS, INC. SS-222 R9 AHA 2/09/05 Multilayer Ceramic Inductors Type MHL CERTIFIED CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency
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SS-222
Dimensions039
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Untitled
Abstract: No abstract text available
Text: • ■A AP PP PLLIIC CA ATTIIO ON N Low profile, high current power supplies Battery powered devices DC/DC converters in distributed power systems DC/DC converters for field programmable gate array ■ ■ FFE EA ATTU UR RE ES S RoHS Compliant. Super low resistance ,ultra high current rating
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TP12N
MLV-TP12NSERIES-O1
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mlvtp12n2r2
Abstract: MLV-TP12N2R2N-O1 MLV-TP12N1R5N-O1 MLV-TP12
Text: • PP ICATION ■A AP PLLICATION Low profile , high current power supplies Battery powered devices DC/DC converters in distributed power systems DC/DC converters for field programmable gate array ■ EATURES ■ FFEATURES RoHS Compliant. Super low resistance ,ultra high current rating
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TP12N
MLV-TP12NSERIES-O1
MLV-TP12NSERIES-O1
MLV-TP12N1R5N-O1
MLV-TP12N2R2N-O1
mlvtp12n2r2
MLV-TP12N2R2N-O1
MLV-TP12N1R5N-O1
MLV-TP12
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Untitled
Abstract: No abstract text available
Text: KL73 thin film inductor features • • • • • Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1H, 1E, 1J, 2A, 2B
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MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: KOA SPEER ELECTRONICS, INC. SS-222 R6 AHA 9/29/03 Multilayer Ceramic Inductors Type MHL CERTIFIED 1. General • ■ ■ ■ ■ Monolithic structure provides high reliability in a wide temperature and humidity range High quality ceramic material and unique manufacturing process provides high Q at high frequency
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SS-222
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Untitled
Abstract: No abstract text available
Text: KL73 thin film inductor features • • • • • Excellent for high frequency applications Low DC resistance and high Q Suitable for reflow and wave soldering Low tolerance ±2% available Small size allows for high density mounting 1H, 1E, 1J, 2A, 2B
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MIL-STD-202,
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ltg 551
Abstract: 221A-04 MTM12N05 MTP12N05 MTP12N06 X48V
Text: MOTOROLA SC XSTRS/R F 1 4 E- D I b3b7ES4 a O TG O MT 3 I - r - 3 9 - / 1 MOTOROLA m SEM IC O N D U C TO R TECHNICAL DATA M TM 12N05 M TP12N 05 MTP12IM06 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N -Channel Enhancem ent-M ode S ilic o n G ate TM O S
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MTM12N05
MTP12N05
MTP12IU06
O-204AA
21A-04
O-220AB
QM20EÂ
ltg 551
221A-04
MTP12N06
X48V
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12N05
Abstract: No abstract text available
Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M TM 12N 05 M TP12N 05 M TP12N 06 Designer's Data Sheet P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TMOS T M O S P O W E R FETs 12 A M P E R E S T he se T M O S P o w e r F E T s are d e sig n e d for lo w voltage, high
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TP12N
O-204AA
21A-04
T0220AB
12N05
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schematic diagram UPS
Abstract: STP12NR20 STP12NR20FI
Text: SGS-THOMSON [MOigœilLiera *® TP12NR20 TP12NR20FI N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE TP12NR20 S TP12N R20FI • . . . . V dss R d S o ii Id 200 V 200 V < 0 .3 Q. < 0 .3 il 12 A 7 A TYPICAL RDS(on) = 0.23 £1
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STP12NR20
STP12NR20FI
STP12NR20
STP12NR20FI
Voltage15
P011C
STP12NR20-STP12NR20FI
ISOWATT220
schematic diagram UPS
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TP12N
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TP12N10E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP12N10E TMOS E-FET™ Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate T h is a d v a n c e d T M O S E -F E T is d e s ig n e d to w ith s ta n d high
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TP12N10E/D
TP12N10E
21A-06
O-220AB
MTP12N10E/D
TP12N
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MTP8N10
Abstract: mtp7n06 mtp12n10 MTP7N15 power mosfets to 204aa MTP5N15 mtp25n10 MTP12P08 MTP3N15 MTH8P20
Text: POWER TRANSISTORS — TMOS continued V b R(DSS) (Volt*) Min (Ohms) Max (Amp) 500 6 3 DS(on) @ >D Device 450 M TM 2P50 >D(Contl (Amp) Max PD @ TC = 25-C (Watts) Max Package 2 75 2 04AA M TP2P50 220AB M TM 2P45 204AA 220A8 M T P 2P45 200 0.7 4 M TM 8P20 1
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O-218
O-22QAB
MTM2P50
204AA
MTP2P50
220AB
MTM2P45
MTP2P45
MTP8N10
mtp7n06
mtp12n10
MTP7N15
power mosfets to 204aa
MTP5N15
mtp25n10
MTP12P08
MTP3N15
MTH8P20
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EATON CM20A
Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid ing complete service, fast delivery and in-depth inventory. Our main
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G12N60b3
Abstract: G12N60B HGT1S12N60B3S HGT1S12N60B3S9A HGTP12N60B3 HGTP12N60B3D LD26 TB334 G12N60 Bipolar HJ
Text: in t e TP12N60B3, HGT1S12N60B3S r r ii J a n u a ry . m Data Sheet 27A, 600V, UFS Series N-Channel IGBTs The TP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have
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HGTP12N60B3,
HGT1S12N60B3S
HGTP12N60B3
HGT1S12N60B3S
TA49171ration
G12N60b3
G12N60B
HGT1S12N60B3S9A
HGTP12N60B3D
LD26
TB334
G12N60
Bipolar HJ
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AN918 MOTOROLA
Abstract: AN918 Paralleling Power MOSFETs in Switching Applications MTP12N10 2N10E AN-918 MTP8N18 AN918 AN-918 Paralleling Power MOSFETs in Switching Applications Nippon capacitors Motorola AN918
Text: ^ AN-918 M O TO R O LA Semiconductor Products Inc. Application Note PARALLELING POWER MOSFETs IN SWITCHING APPLICATIONS by Kim Gauen This article updates and supplements the present TDT series of Motorola Applications Notes w ith a more detailed analysis end design guide for TMOS power MOSFET parallel
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AN-918
AN918 MOTOROLA
AN918 Paralleling Power MOSFETs in Switching Applications
MTP12N10
2N10E
AN-918
MTP8N18
AN918
AN-918 Paralleling Power MOSFETs in Switching Applications
Nippon capacitors
Motorola AN918
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irf630
Abstract: IRF230 12N20 f630 IRF630-633 IRF231 IRF631 IRF632 IRF633 MTP12N18
Text: FAIRCHILD S E M I C O ND UC TO R_ I FAIRCHILD 34^7.4 005787'! „ TP12N18/12N20 T N-Channe! Power MOSFETs, 12 A, 150-200 V A Schlumberger Company Power And Discrete Division Description rO-204AA TO-220AB RF230 RF231 RF232 RF233 IRF630 IRF631
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IRF230-233/IRF630-633
MTP12N18/12N20
TQ-204AA
O-220AB
IRF630
IRF631
IRF632
IRF633
MTP12N18
MTP12N20
irf630
IRF230
12N20
f630
IRF630-633
IRF231
IRF631
IRF632
IRF633
MTP12N18
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TP8N10
Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Text: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI
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2SK295
2SK296
2SK308
2SK310
2SK311
2SK312
2SK313
2SK319
2SK320
2SK324
TP8N10
th15n20
TH7N50
TP4N10
TP10N05
IRFP350FI
TP5N35
tp5n40
TP4N45
TP3N40
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MTP12N20
Abstract: Transistor 3-354 AN569
Text: MOTOROLA SC XSTRS/R bf l E F b3b?2S4 » GCHf l V1!? W MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP12N20 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES RDS<on) = 0.35 OHM 200 VOLTS This TM O S Power FET is designed for medium voltage, high
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MTP12N20
MTP12N20
Transistor 3-354
AN569
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20N15
Abstract: 35n05 mje13002 to92 ur3060 AN803 motorola 2N6823 isolated dc-dc mc34063 mje12007 Motorola Switchmode 1 special
Text: C O N TE N TS Page What Everyone Should Know About Switching Power Supplies In tro du ctio n. Comparison w ith Linear Regulations.
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