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    5N05 Search Results

    5N05 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NP75N055YUK-E1-AY Renesas Electronics Corporation Nch Single Power MOSFET 55V 75A 4.5mohm HSON-8 Automotive Visit Renesas Electronics Corporation
    NP55N055SUG-E1-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP35N055YUK-E2-AY Renesas Electronics Corporation Nch Single Power MOSFET 55V 35A 6.7mohm HSON-8 Automotive Visit Renesas Electronics Corporation
    NP55N055SUG-E2-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
    NP55N055SDG-E2-AY Renesas Electronics Corporation Power MOSFETs for Automotive Visit Renesas Electronics Corporation
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    5N05 Price and Stock

    Renesas Electronics Corporation NP75N055YUK-E1-AY

    POWER TRS2
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    DigiKey NP75N055YUK-E1-AY Cut Tape 5,000 1
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    NP75N055YUK-E1-AY Digi-Reel 5,000 1
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    NP75N055YUK-E1-AY Reel 5,000 2,500
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    Avnet Americas NP75N055YUK-E1-AY Reel 18 Weeks 2,500
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    Avnet Silica NP75N055YUK-E1-AY 20 Weeks 2,500
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    Renesas Electronics America NP75N055YUK-E1-AY Tape & Reel (TR) 5,000 1
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    American Electrical Inc A1545.N0500.12

    CABLE GLAND 5.5-12MM 1/2" NPT
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    DigiKey A1545.N0500.12 Bag 2,323 1
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    RS A1545.N0500.12 Bulk 2 3 Weeks 1
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    Master Electronics A1545.N0500.12 100
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    ROHM Semiconductor RSS095N05HZGTB

    NCH 45V 9.5A POWER MOSFET: RSS09
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    DigiKey RSS095N05HZGTB Cut Tape 2,250 1
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    RSS095N05HZGTB Digi-Reel 2,250 1
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    Mouser Electronics RSS095N05HZGTB 4,259
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    TTI RSS095N05HZGTB Reel 2,500
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    Avnet Silica RSS095N05HZGTB 19 Weeks 2,500
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    Chip One Stop RSS095N05HZGTB Cut Tape 380
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    CoreStaff Co Ltd RSS095N05HZGTB 2,476
    • 1 $1.884
    • 10 $1.413
    • 100 $0.753
    • 1000 $0.678
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    Essentra Components 50M080125N050

    PAN SLOTTED SCREW, M8 X 1.25 THR
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    DigiKey 50M080125N050 Bulk 1,002 1
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    Amphenol PCD A850491815N05

    CONN BACKSHELL W/CLMP SZ15 D
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    DigiKey A850491815N05 Bag 101 1
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    CDM Electronics A850491815N05
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    5N05 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    5N05

    Abstract: No abstract text available
    Text: 5N05L, RFP15N06L Data Sheet July 1999 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs [ /Title RFP1 5N05L , RFP15 N06L /Subject (15A, 50V and 60V, 0.140 Ohm, Logic Level NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation,


    Original
    RFP15N05L, RFP15N06L 5N05L RFP15 TA0522. 5N05 PDF

    5n06

    Abstract: 5N05 S-6059 SGSP351 DIODE c335 17611 SEFP5N05 17610 SEFP5N06
    Text: S G S-THOHSON D7E » | 7la-H37 0018113 0 II 73C 1 7 6 1 0 D r - 3 ? -tr : I: I, 5N05 SEFP5N06 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS V DSS T h e se p ro d ucts are diffused multi-cell silicon gate N -C h a n n e l e n ha ncem e nt m ode P o w e r-M o s field


    OCR Scan
    SEFP5N05 SEFP5N06 0V/60V 20Kfl) 300/is, SGSP351 100/is s-6059 C-335 5n06 5N05 DIODE c335 17611 17610 SEFP5N06 PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan
    VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit PDF

    5N05

    Abstract: 5n06 mtp5n05
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA 5N05 MTP5N06 Designer's Data Sheet P o w er Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TM OS T M O S P O W E R FETs 5 AM PERES T h e s e T M O S P o w e r FETs a re d e s ig n e d f o r h ig h s p e e d p o w e r


    OCR Scan
    MTP5N05 5N05 5n06 PDF

    IN5240B

    Abstract: P25N05 IN5240 0-15V RFP25N05 lo205 ls25 diode 5N05 72S4 c048
    Text: Power MegaFETs 5N05 F ile N u m b e r 211:2 N-Channel Enhancement-Mode Power Field-Effect Transistors MegaFETs 25 A, 50 V rDs(on) = 0.047 O N -C H A N N E L E N H A N C E M E N T M O D E Features: • S ingle pu lse avalanche en ergy ra ted ■ SOA is p o w e r-d is s ip a tio n lim ite d


    OCR Scan
    RFP25N05 RFP25N05 AN-72S4 AN-7260. IN5240B CS-42659 92CS-42S60 IN5240B P25N05 IN5240 0-15V lo205 ls25 diode 5N05 72S4 c048 PDF

    5N06

    Abstract: No abstract text available
    Text: 3QE D • T TS ^S B? S G S - T H O M ^ 7 # 005^07= 3 ■ ^ S O N M T P 1 5 N 0 5 L /F I ^ O g œ iltL tK g T O K Ü D g i M T P 1 5 N 0 6 L /F I s: G _s-THOMSON N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTORS PRELIMINARY DATA TYPE 5N05L


    OCR Scan
    TP15N05L TP15N05LFI TP15N06L TP15N06LFI 500ms 5N06 PDF

    5N05

    Abstract: 5n06 MTP5N05 MTP5N06 MTP4N08 MTP4N10 5n0506
    Text: <8> MTP4N08, 5N05 MTP4N10, MTP5N06 MOTOROLA D e s i g n e r ’s D a t a S h e e t 4.0 and 5.0 AMPERE N-CHANNEL TMOS POWER FET N -C H A N N E L ENHANCEM ENT M ODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTO R rDS on = 0-8 OHM 80 and 100 VOLTS These TMOS Power FETs are designed for low voltage, high


    OCR Scan
    MTP4N08, MTP5N05 MTP4N10, MTP5N06 5N05 5n06 MTP5N06 MTP4N08 MTP4N10 5n0506 PDF

    5N10E

    Abstract: 5n05e 5N06E 5n06 SISCO transistor 1183 4n60e 14n24 5p06 6N25D
    Text: SIPMOS Chip-Produkte/SIPMOS Die Products SIPMOS Small-Signal Transistor Dice Die type Recommended bond wire diam eter' nm Die topology Page -0 .8 .-2 .0 -0 .8 .-2 .0 SISC0.5P05E SISC3.2P05E 22 22 LA LC 1183 1183 - 1 .0 .-2 .0 SISC0.5P06E 22 LA 1183


    OCR Scan
    5P05E 2P05E 5P06E 2P10E 2P20E 4P24E 2N05E 5N05E 5N06E 5N65E 5N10E 5n06 SISCO transistor 1183 4n60e 14n24 5p06 6N25D PDF

    5n06

    Abstract: diode c335 5N05 SEFP5N05 SEFP5N06
    Text: S G S-THOHSON D7E » | 7la-H37 0018113 0 II 73C 1 7 6 1 0 D I: I, N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Pow er-M os field effect transistors. ^stg Ti


    OCR Scan
    7la-H37 SEFP5N05 SEFP5N06 0V/60V C-335 5n06 diode c335 5N05 SEFP5N06 PDF

    p15n05

    Abstract: C5443 5N05L 5N05 15N05L 15n05 CS4420 P15N05L
    Text: *57 SGS-THOMSON stp 15no5l ilLiCTIIMDe S T P 1 5 N 05LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S T P 5N05L S T P 5N05LFI • . . ■ ■ . ■ ■ V dss R DS on 50 V 50 V < 0.15 a < 0.15 a Id 15 10 A A T Y P IC A L RDS(on) = 0.115 £2


    OCR Scan
    15no5l 05LFI 15N05L 15N05LFI p15n05 C5443 5N05L 5N05 15n05 CS4420 P15N05L PDF