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    DT MARKING CODE Search Results

    DT MARKING CODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5446/BEA Rochester Electronics LLC 5446 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01006BEA) Visit Rochester Electronics LLC Buy
    54LS190/BEA Rochester Electronics LLC 54LS190 - BCD Counter, 4-Bit Synchronous Up/Down, With Mode Control - Dual marked (M38510/31513BEA) Visit Rochester Electronics LLC Buy
    5447/BEA Rochester Electronics LLC 5447 - Decoder, BCD-To-7-Segment, With Open-Collector Outputs - Dual marked (M38510/01007BEA) Visit Rochester Electronics LLC Buy
    TC4511BP Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, BCD-to-7-Segment Decoder, DIP16 Visit Toshiba Electronic Devices & Storage Corporation
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy

    DT MARKING CODE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MKP1848

    Abstract: capacitor MKP
    Text: MKP1848 DC Link Vishay Roederstein Metallized Polypropylene Film Capacitor DC Capacitor MKP Type W I W I h Marking h Ø dt P1 ± 0.4 - PCM 27.5 mm P1 ± 0.5 - PCM ≥ 37.5 mm 6-2 Ø dt 6-1 P1 ± 0.5 P2 ± 0.5 Dimensions in millimeters FEATURES Ø dt ± 10 % of standard diameter specified


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    MKP1848 18-Jul-08 capacitor MKP PDF

    77V1254

    Abstract: 77V1264
    Text: 77V1264L200 Device Errata Notes Supplemental Information The revision of the 77V1264L200 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1254 77V1264 L200PG WByywwA XCyywwA Revision


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    77V1264L200 77V1264L200 77V1254 77V1264 L200PG 77V1254 77V1264 PDF

    TRANSISTOR SMD CODE 6.8

    Abstract: tbd 380 DIODE smd marking Ag MARKING CODE TBD TRANSISTOR SMD MARKING CODE ag SPBX2N60S5 SPPX2N60S5
    Text: SPPX2N60S5 SPBX2N60S5 Target data sheet Cool MOS Power Transistor •N-Channel •Enhancement mode •Ultra low gate charge •Avalanche rated •dv/dt rated •150°C operating temperature 1 2 3 G D S Type VDS ID RDS on Marking Package Ordering Code SPPX2N60S5


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    SPPX2N60S5 SPBX2N60S5 X2N60S5 P-TO220-3-1 P-TO263-3-2 21/Oct/1998 TRANSISTOR SMD CODE 6.8 tbd 380 DIODE smd marking Ag MARKING CODE TBD TRANSISTOR SMD MARKING CODE ag SPBX2N60S5 SPPX2N60S5 PDF

    smd marking 58a

    Abstract: 80N10L INFINEON PART MARKING to220 pcb footprint SPI80N10L SPP80N10L 80N10 SMD marking code 58A
    Text: SPI80N10L SPP80N10L SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS Package Ordering Code Marking SPP80N10L PG-TO220-3-1 Q67042-S4173 80N10L


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    SPI80N10L SPP80N10L PG-TO262-3-1 PG-TO220-3-1 Q67042-S4173 80N10L smd marking 58a 80N10L INFINEON PART MARKING to220 pcb footprint SPI80N10L SPP80N10L 80N10 SMD marking code 58A PDF

    DIODE smd marking Ag

    Abstract: MARKING CODE TBD TRANSISTOR SMD MARKING CODE ag P-TO251-3-1 P-TO252 SPDX6N60S5 SPUX6N60S5 transistor smd marking Ag TRANSISTOR SMD MARKING CODE GFs
    Text: SPUX6N60S5 SPDX6N60S5 Target data sheet Cool MOS Power Transistor •N-Channel •Enhancement mode •Ultra low gate charge •Avalanche rated •dv/dt rated •150°C operating temperature 1 2 3 G D S Type VDS ID RDS on Marking Package Ordering Code SPUX6N60S5


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    SPUX6N60S5 SPDX6N60S5 X6N60S5 P-TO251-3-1 P-TO252 21/Oct/1998 DIODE smd marking Ag MARKING CODE TBD TRANSISTOR SMD MARKING CODE ag P-TO251-3-1 P-TO252 SPDX6N60S5 SPUX6N60S5 transistor smd marking Ag TRANSISTOR SMD MARKING CODE GFs PDF

    77V106

    Abstract: 77V107 YB device marking Code
    Text: 77V107 Device Errata Notes Supplemental Information The revision/die stepping of the 77V107 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V106 77V107 L25TF <\\ZZF Revision/Stepping


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    77V107 77V107 77V106 L25TF 77V106 YB device marking Code PDF

    Q67042-S4057

    Abstract: Q67042-S4058 INFINEON PART MARKING marking code br 39 SMD SPB100N03S2-03 SPP100N03S2-03 PN0303
    Text: SPP100N03S2-03 SPB100N03S2-03 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 30 RDS on max. SMD version 3 ID Package Ordering Code Marking


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    SPP100N03S2-03 SPB100N03S2-03 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67042-S4058 PN0303 P-TO263-3-2 Q67042-S4057 Q67042-S4058 INFINEON PART MARKING marking code br 39 SMD SPB100N03S2-03 SPP100N03S2-03 PN0303 PDF

    77V1254

    Abstract: L200PG 77V126L200
    Text: 77V126L200 Device Errata Notes Supplemental Information The revision of the 77V126L200 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫  dt 77V1254 L200PG WByywwA XCyywwA Revision Date Code


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    77V126L200 77V126L200 77V1254 L200PG 77V1254 L200PG PDF

    2N06LH5

    Abstract: DIODE H5 SMD Q67060-S6055 S6054 smd diode H5 ANPS071E SPB80N06S2L-H5 SPP80N06S2L-H5 2N06
    Text: SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on 55 ID • 175°C operating temperature • dv/dt rated Package Ordering Code Marking SPP80N06S2L-H5 P- TO220 -3-1 Q67060-S6054


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    SPP80N06S2L-H5 SPB80N06S2L-H5 Q67060-S6054 Q67060-S6055 2N06LH5 BSPP80N06S2L-H5 BSPB80N06S2L-H5, 2N06LH5 DIODE H5 SMD Q67060-S6055 S6054 smd diode H5 ANPS071E SPB80N06S2L-H5 SPP80N06S2L-H5 2N06 PDF

    47N10

    Abstract: SPB47N10 SPI47N10 SPP47N10 V550-12 Q67060-S7431
    Text: Preliminary data SPI47N10 SPP47N10,SPB47N10 SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS P-TO262-3-1 Package Ordering Code Marking SPP47N10 P-TO220-3-1


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    SPI47N10 SPP47N10 SPB47N10 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP47N10 Q67040-S4183 47N10 47N10 SPB47N10 SPI47N10 V550-12 Q67060-S7431 PDF

    77V106

    Abstract: YB device marking Code
    Text: 77V106 Device Errata Notes Supplemental Information The revision/die stepping of the 77V106 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V106 L25TF <\\ZZF Revision/Stepping Date Code


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    77V106 77V106 L25TF YB device marking Code PDF

    Q67040-S4440

    Abstract: 11N80C3 11N8
    Text: SPW11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 0.45 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated Type Package Ordering Code Marking


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    SPW11N80C3 P-TO247 Q67040-S4440 11N80C3 Q67040-S4440 11N80C3 11N8 PDF

    Untitled

    Abstract: No abstract text available
    Text: IDT77V222 Micro ABR SAR Device Errata Notes Supplemental Information The revision of the 77V222 Micro ABR SAR can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V222 Data Code L155PG X9901A


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    IDT77V222 77V222 L155PG X9901A PDF

    77V1254

    Abstract: No abstract text available
    Text: 77V1254L25 Device Errata Notes Supplemental Information The revision of the 77V1254L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location


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    77V1254L25 77V1254L25 77V1254 L25PG 77V1254 PDF

    BSP123

    Abstract: E6327 Q67000-S306
    Text: Rev. 1.0 SIPMOS Small-Signal-Transistor BSP123 Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 100 V 6 Ω 0.37 A SOT223 Type Package Ordering Code Tape and Reel Information Marking BSP123 SOT223


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    BSP123 OT223 Q67000-S306 E6327: BSP123 E6327 Q67000-S306 PDF

    77V1254

    Abstract: 77V1254L25
    Text: 77V1254L25 Device Errata Notes Supplemental Information The revision of the 77V1254L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location


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    77V1254L25 77V1254L25 77V1254 L25PG 77V1254 PDF

    10N10L

    Abstract: Q67042-S4162 TRANSISTOR SMD MARKING CODE 42 Q67042-S4163 SPI10N10L SPP10N10L
    Text: SPI10N10L SPP10N10L SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 100 RDS on 154 m ID 10.3 A PG-TO262-3-1 Type Package Ordering Code Marking


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    SPI10N10L SPP10N10L PG-TO262-3-1 PG-TO220-3-1 Q67042-S4163 10N10L 10N10L Q67042-S4162 TRANSISTOR SMD MARKING CODE 42 Q67042-S4163 SPI10N10L SPP10N10L PDF

    BSS138W

    Abstract: D028 E6327 D003 SOT sws sot-323
    Text: BSS138W SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.28 A • Logic level • dv /dt rated SOT-323 Type Package Ordering Code Tape and Reel Information Marking BSS138W SOT-323


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    BSS138W OT-323 Q67042-S4187 E6327: Q67042-S4191 E6433: BSS138W D028 E6327 D003 SOT sws sot-323 PDF

    SOT23 marking skS

    Abstract: SKs SOT23 q67042-s4184 dd1270 BSS138N D023 D26 SOT23 marking code SKs marking SKs sot-23
    Text: BSS138N SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.23 A • Logic level • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS138N SOT-23


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    BSS138N OT-23 BSS138N OT-23 Q67042-S4184 Q67042-S4190 E6327: E6433: SOT23 marking skS SKs SOT23 dd1270 D023 D26 SOT23 marking code SKs marking SKs sot-23 PDF

    SOT23 marking skS

    Abstract: Q67042-S4184 diode sot-23 marking AG SKs SOT23 D023 BSS138N SKs 83 SKs TRANSISTOR E6327 marking code SKs
    Text: BSS138N SIPMOS Small-Signal-Transistor Product Summary Features • N-channel • Enhancement mode V DS 60 V R DS on ,max 3.5 Ω ID 0.23 A • Logic level • dv /dt rated SOT-23 Type Package Ordering Code Tape and Reel Information Marking BSS138N SOT-23


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    BSS138N OT-23 Q67042-S4184 E6327: Q67042-S4190 E6433: SOT23 marking skS Q67042-S4184 diode sot-23 marking AG SKs SOT23 D023 BSS138N SKs 83 SKs TRANSISTOR E6327 marking code SKs PDF

    YB device marking Code

    Abstract: No abstract text available
    Text: 9 'HYLFH UUDWD 1RWHV 6XSSOHPHQWDO ,QIRU ,QIRUPDWLRQ PDWLRQ The revision/die stepping of the 77V106 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V106 L25TF Yyywwc Revision/Stepping


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    77V106 L25TF YB device marking Code PDF

    IDT77V222

    Abstract: aal3
    Text: IDT77V222 Micro ABR SAR De Device Er rata Notes Suppl upplement ental Infor mation The revision of the 77V222 Micro ABR SAR can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V222 Data Code


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    IDT77V222 77V222 77V222 L155PG X9901A aal3 PDF

    77V1253

    Abstract: 77V1254
    Text: 77V1253L25 Device Errata Notes Supplemental Information The revision of the 77V1253L25 can be determined visually from the date code shown on the top marking. The date code is the third line of text. ∫ dt 77V1253 77V1254 L25PG DZyywwA Date Code “yyww_” indicates Year, Week & Assembly location


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    77V1253L25 77V1253L25 77V1253 77V1254 L25PG 77V1253 77V1254 PDF

    2N0623

    Abstract: INFINEON PART MARKING to252 S7420 BSPD30N06S2-23 P-TO252 SPD30N06S2-23 k 940 S5025 2N062
    Text: SPD30N06S2-23 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 23 m ID 30 A P-TO252 Type Package Ordering Code Marking SPD30N06S2-23


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    SPD30N06S2-23 P-TO252 Q67060-S7420 2N0623 BSPD30N06S2-23, SPD30N06S2-23 2N0623 INFINEON PART MARKING to252 S7420 BSPD30N06S2-23 P-TO252 k 940 S5025 2N062 PDF