SPDX6N60S5 Search Results

SPDX6N60S5 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
SPDX6N60S5		Infineon Technologies	Cool MOS TM Power Transistor		Original	PDF

SPDX6N60S5 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
DIODE smd marking Ag Abstract: MARKING CODE TBD TRANSISTOR SMD MARKING CODE ag P-TO251-3-1 P-TO252 SPDX6N60S5 SPUX6N60S5 transistor smd marking Ag TRANSISTOR SMD MARKING CODE GFs Text: SPUX6N60S5 SPDX6N60S5 Target data sheet Cool MOS Power Transistor •N-Channel •Enhancement mode •Ultra low gate charge •Avalanche rated •dv/dt rated •150°C operating temperature 1 2 3 G D S Type VDS ID RDS on Marking Package Ordering Code SPUX6N60S5	Original	PDF	SPUX6N60S5 SPDX6N60S5 X6N60S5 P-TO251-3-1 P-TO252 21/Oct/1998 DIODE smd marking Ag MARKING CODE TBD TRANSISTOR SMD MARKING CODE ag P-TO251-3-1 P-TO252 SPDX6N60S5 SPUX6N60S5 transistor smd marking Ag TRANSISTOR SMD MARKING CODE GFs
04N60S5 Abstract: SPD04N60S5 P-TO251-3-1 P-TO252 SPU04N60S5 04N60 Text: SPU04N60S5 SPD04N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity	Original	PDF	SPU04N60S5 SPD04N60S5 SPUx6N60S5/SPDx6N60S5 SPU04N60S5 P-TO251-3-1 P-TO252 04N60S5 Q67040-S4228 04N60S5 SPD04N60S5 P-TO251-3-1 P-TO252 04N60
04n60s5 Abstract: 04N60 P-TO251-3-1 P-TO252 SPD04N60S5 SPU04N60S5 Q67040-S4202 597 smd transistor Text: SPU04N60S5 SPD04N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated	Original	PDF	SPU04N60S5 SPD04N60S5 P-TO252 P-TO251-3-1 SPUx6N60S5/SPDx6N60S5 Q67040-S4228 04N60S5 04n60s5 04N60 P-TO251-3-1 P-TO252 SPD04N60S5 SPU04N60S5 Q67040-S4202 597 smd transistor
04n60s5 Abstract: SPD04N60S5 Text: SPU04N60S5 SPD04N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	PDF	SPU04N60S5 SPD04N60S5 SPUx6N60S5/SPDx6N60S5 P-TO251-3-1 P-TO252 04N60S5 04N60S5 Q67040-S4228 SPD04N60S5
AG qd transistor SMD Abstract: transistor ag qs Text: SIEMENS SPUX6N60S5 SPDX6N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • Extreme di//df rated • 150°C operating temperature Type V^DS b SPUX6N60S5 600 V 4.5 A Pin 1	OCR Scan	PDF	SPUX6N60S5 SPDX6N60S5 X6N60S5 P-T0251 P-T0252 AG qd transistor SMD transistor ag qs
Untitled Abstract: No abstract text available Text: SIEMENS SPU04N60S5 SPD04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity	OCR Scan	PDF	SPU04N60S5 SPD04N60S5 SPUx6N60S5/SPDx6N60S5 SPU04N60S5 P-T0251 04N60S5 Q67040-S4228 P-T0252