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    SPDX6N60S5 Search Results

    SPDX6N60S5 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPDX6N60S5 Infineon Technologies Cool MOS TM Power Transistor Original PDF

    SPDX6N60S5 Datasheets Context Search

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    DIODE smd marking Ag

    Abstract: MARKING CODE TBD TRANSISTOR SMD MARKING CODE ag P-TO251-3-1 P-TO252 SPDX6N60S5 SPUX6N60S5 transistor smd marking Ag TRANSISTOR SMD MARKING CODE GFs
    Text: SPUX6N60S5 SPDX6N60S5 Target data sheet Cool MOS Power Transistor •N-Channel •Enhancement mode •Ultra low gate charge •Avalanche rated •dv/dt rated •150°C operating temperature 1 2 3 G D S Type VDS ID RDS on Marking Package Ordering Code SPUX6N60S5


    Original
    PDF SPUX6N60S5 SPDX6N60S5 X6N60S5 P-TO251-3-1 P-TO252 21/Oct/1998 DIODE smd marking Ag MARKING CODE TBD TRANSISTOR SMD MARKING CODE ag P-TO251-3-1 P-TO252 SPDX6N60S5 SPUX6N60S5 transistor smd marking Ag TRANSISTOR SMD MARKING CODE GFs

    04N60S5

    Abstract: SPD04N60S5 P-TO251-3-1 P-TO252 SPU04N60S5 04N60
    Text: SPU04N60S5 SPD04N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original
    PDF SPU04N60S5 SPD04N60S5 SPUx6N60S5/SPDx6N60S5 SPU04N60S5 P-TO251-3-1 P-TO252 04N60S5 Q67040-S4228 04N60S5 SPD04N60S5 P-TO251-3-1 P-TO252 04N60

    04n60s5

    Abstract: 04N60 P-TO251-3-1 P-TO252 SPD04N60S5 SPU04N60S5 Q67040-S4202 597 smd transistor
    Text: SPU04N60S5 SPD04N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated


    Original
    PDF SPU04N60S5 SPD04N60S5 P-TO252 P-TO251-3-1 SPUx6N60S5/SPDx6N60S5 Q67040-S4228 04N60S5 04n60s5 04N60 P-TO251-3-1 P-TO252 SPD04N60S5 SPU04N60S5 Q67040-S4202 597 smd transistor

    04n60s5

    Abstract: SPD04N60S5
    Text: SPU04N60S5 SPD04N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original
    PDF SPU04N60S5 SPD04N60S5 SPUx6N60S5/SPDx6N60S5 P-TO251-3-1 P-TO252 04N60S5 04N60S5 Q67040-S4228 SPD04N60S5

    AG qd transistor SMD

    Abstract: transistor ag qs
    Text: SIEMENS SPUX6N60S5 SPDX6N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • Extreme di//df rated • 150°C operating temperature Type V^DS b SPUX6N60S5 600 V 4.5 A Pin 1


    OCR Scan
    PDF SPUX6N60S5 SPDX6N60S5 X6N60S5 P-T0251 P-T0252 AG qd transistor SMD transistor ag qs

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SPU04N60S5 SPD04N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity


    OCR Scan
    PDF SPU04N60S5 SPD04N60S5 SPUx6N60S5/SPDx6N60S5 SPU04N60S5 P-T0251 04N60S5 Q67040-S4228 P-T0252