SPPX2N60S5 Search Results

SPPX2N60S5 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
SPPX2N60S5		Infineon Technologies	Cool MOS TM Power Transistor		Original	PDF

SPPX2N60S5 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TRANSISTOR SMD CODE 6.8 Abstract: tbd 380 DIODE smd marking Ag MARKING CODE TBD TRANSISTOR SMD MARKING CODE ag SPBX2N60S5 SPPX2N60S5 Text: SPPX2N60S5 SPBX2N60S5 Target data sheet Cool MOS Power Transistor •N-Channel •Enhancement mode •Ultra low gate charge •Avalanche rated •dv/dt rated •150°C operating temperature 1 2 3 G D S Type VDS ID RDS on Marking Package Ordering Code SPPX2N60S5	Original	PDF	SPPX2N60S5 SPBX2N60S5 X2N60S5 P-TO220-3-1 P-TO263-3-2 21/Oct/1998 TRANSISTOR SMD CODE 6.8 tbd 380 DIODE smd marking Ag MARKING CODE TBD TRANSISTOR SMD MARKING CODE ag SPBX2N60S5 SPPX2N60S5
11N60S5 Abstract: SPI11N60S5 Text: SPI11N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation: G,1	Original	PDF	SPI11N60S5 SPPx2N60S5 P-TO262 11N60S5 Q67040-S4250 11N60S5 SPI11N60S5
11n60s Abstract: 11n60 SMD CASE footprint Text: SPP11N60S5 SPB11N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity	Original	PDF	SPP11N60S5 SPB11N60S5 SPPx2N60S5/SPBx2N60S5 P-TO220-3-1 P-TO263-3-2 11N60S5 11N60S5 Q67040-S4198 11n60s 11n60 SMD CASE footprint
11N60S5 equivalent Abstract: 11N60s5 1713 11N60 SMD MARKING CODE 10 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 F11A 095 Text: SPI11N60S5 Preliminary data SPP11N60S5, SPB11N60S5 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity ·	Original	PDF	SPI11N60S5 SPP11N60S5, SPB11N60S5 SPPx2N60S5/SPBx2N60S5 P-TO220-3-1 11N60S5 Q67040-S4198 P-TO263-3-2 11N60S5 equivalent 11N60s5 1713 11N60 SMD MARKING CODE 10 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 F11A 095
TRANSISTOR SMD MARKING CODE 7A Abstract: 11N60S5 SPB11N60S5 SPI11N60S5 SPP11N60S5 Text: SPI11N60S5 SPP11N60S5, SPB11N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated	Original	PDF	SPI11N60S5 SPP11N60S5, SPB11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPPx2N60S5/SPBx2N60S5 SPP11N60S5 Q67040-S4198 TRANSISTOR SMD MARKING CODE 7A 11N60S5 SPB11N60S5 SPI11N60S5 SPP11N60S5
11N60S5 Abstract: SPB11N60S5 SPP11N60S5 Text: SPP11N60S5 SPB11N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	PDF	SPP11N60S5 SPB11N60S5 SPPx2N60S5/SPBx2N60S5 SPP11N60S5 P-TO220-3-1 11N60S5 Q67040-S4198 P-TO263-3-2 11N60S5 SPB11N60S5
11N60S5 Abstract: SPP11N60S5 SPB11N60S5 Text: SPP11N60S5 SPB11N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity	Original	PDF	SPP11N60S5 SPB11N60S5 SPPx2N60S5/SPBx2N60S5 SPP11N60S5 P-TO220-3-1 P-TO263-3-2 11N60S5 Q67040-S4198 11N60S5 SPB11N60S5
Untitled Abstract: No abstract text available Text: SIEMENS SPPX2N60S5 SPBX2N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • Extreme dv/dt rated • 150°C operating temperature Type ^DS b SPPX2N60S5 600 V 11.3 A 380 m il	OCR Scan	PDF	SPPX2N60S5 SPBX2N60S5 X2N60S5 P-T0220-3-1 P-T0263-3-2
transistor ag qs Abstract: transistor smd hq transistor di 960 TRANSISTOR SMD CODE 6.8 Text: SIEMENS SPPX2N60S5 SPBX2N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge • Avalanche rated • Extreme di//df rated • 150°C operating temperature Type V^DS b SPPX2N60S5 600 V 11.3 A 380 mQ	OCR Scan	PDF	SPPX2N60S5 SPBX2N60S5 X2N60S5 P-T0220-3-1 P-T0263-3-2 transistor ag qs transistor smd hq transistor di 960 TRANSISTOR SMD CODE 6.8