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    Microchip Technology Inc dsPIC33EP512MU810-I/PT

    Digital Signal Processors & Controllers - DSP, DSC 100P 512KB Flsh 52KB RAM 60MHz USB
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    Mouser Electronics dsPIC33EP512MU810-I/PT 12,773
    • 1 $11.47
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    • 100 $9.52
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    Microchip Technology Inc DSPIC33EP512MU814-E/PL

    Digital Signal Processors & Controllers - DSP, DSC 144P 512KB Flsh 52KB RAM 60MHz USB
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    Mouser Electronics DSPIC33EP512MU814-E/PL 4,364
    • 1 $13.57
    • 10 $13.56
    • 100 $11.8
    • 1000 $11.79
    • 10000 $11.79
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    Microchip Technology Inc dsPIC33EP512MU810-E/PF

    Digital Signal Processors & Controllers - DSP, DSC 100P 512KB Flsh 52KB RAM 60MHz USB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics dsPIC33EP512MU810-E/PF 3,054
    • 1 $13.27
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    • 100 $11.02
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    • 10000 $11.02
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    Microchip Technology Inc dsPIC33EP512MU810-E/PT

    Digital Signal Processors & Controllers - DSP, DSC 100P 512KB Flsh 52KB RAM 60MHz USB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics dsPIC33EP512MU810-E/PT 2,031
    • 1 $11.43
    • 10 $10.2
    • 100 $9.92
    • 1000 $9.65
    • 10000 $9.65
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    Microchip Technology Inc dsPIC33EP512MU814-I/PL

    Digital Signal Processors & Controllers - DSP, DSC 144P 512KB Flsh 52KB RAM 60MHz USB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics dsPIC33EP512MU814-I/PL 1,389
    • 1 $12.97
    • 10 $12.97
    • 100 $11.87
    • 1000 $10.77
    • 10000 $10.77
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    Find more DS 35-12 E price and stock on Findchips.com

    DS 35-12 E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    STM4433

    Abstract: No abstract text available
    Text: S T M4433 S amHop Microelectronics C orp. MAY . 12 2004 P -C hannel E nhancement Mode MOS FE T F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON ( m W ) Max R ugged and reliable. 35 @ V G S = -10V -30V 5 S uper high dense cell design for low R DS (ON ).


    Original     		M4433 STM4433 PDF

    AT1RC3

    Abstract: semikron SKS B6U B6CI b6u b6ci SKS 59F B6CI 16 V12 IGBT SEMISTACK tds sensor B6CI 12 V12 5-pin hall skhi 20opa
    Text: SEMISTACK - IGBT Circuit B6CI Symbol IRMS max Tamb = 35ºC 1 SEMIX Stack Three-phase inverter SKS 59F B6U+E1CIF+B6CI 35 V12 Vcemax fswmax fSWmaxCsl C Ceqvl Tds% VDCmax Rectifier Vnetmax Tvj SEMiX 151 GD 128 Ds Tstg SKD 116/12 Tamb Visol w Cooling P 16/390F


    Original     		10min B43303A0687 16/390F 20opA AT1RC3 semikron SKS B6U B6CI b6u b6ci SKS 59F B6CI 16 V12 IGBT SEMISTACK tds sensor B6CI 12 V12 5-pin hall skhi 20opa PDF

    IEC61249-2-21

    Abstract: IPP26CNE8N 25CNE8N
    Text: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original     		IPB26CNE8N IPD25CNE8N IPI26CNE8N IPP26CNE8N IPU25CNE8N IEC61249-2-21 IEC61249-2-21 25CNE8N PDF

    IPB26CN10NG

    Abstract: IPI26CN10NG IPP26CN10NG IEC61249-2-21 IPB26CN10N IPI26CN10N IPP26CN10N ds 1-08 diode
    Text: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original     		IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IEC61249-2-21 PG-TO263-3 IPB26CN10NG IPI26CN10NG IPP26CN10NG IEC61249-2-21 ds 1-08 diode PDF

    25CN10N

    Abstract: 26CN10N IPB26CN10N IPU25CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG IPD25CN10N G IPI26CN10N IPP26CN10N
    Text: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original     		IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IPU25CN10N 25CN10N 26CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG IPD25CN10N G PDF

    IPP26CNE8N

    Abstract: D35AV marking d35 25CNE8N 26CNE8N c25 diode to220
    Text: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original     		IPB26CNE8N IPD25CNE8N IPI26CNE8N IPP26CNE8N IPU25CNE8N D35AV marking d35 25CNE8N 26CNE8N c25 diode to220 PDF

    Z86C63

    Abstract: Z86C64 Z86C96 P63-P62
    Text: Z86C63/64 CPS DC-5461-02 P R E L I M I N A R Y PRELIMINARY CUSTOMER PRODUCT SPECIFICATION Z86C63/64 GENERAL DESCRIPTION The Z86C63/64 microcontroller introduces a new level of sophistication to single-chip architecture. The Z86C63/64 is a member of the Z8 single-chip microcontroller family with 32


    Original     		Z86C63/64 DC-5461-02 Z86C63/64 Z86C63 40-pin 44-pin Z86C64 Z86C64 Z86C96 P63-P62 PDF

    c6025

    Abstract: No abstract text available
    Text: S T M8360A S amHop Microelectronics C orp. Oct.16,2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 35V 7A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -35V -5A R DS (ON) ( m W )


    Original     		M8360A c6025 PDF

    Z86C66

    Abstract: No abstract text available
    Text: Z86C66 CP96DZ82500 P R E L I M I N A R Y PRELIMINARYCUSTOMERPRODUCTSPECIFICATION Z86C66 CMOS Z8 16KROMMICROCONTROLLER FEATURES Part Z86C66 ROM KB 16 RAM* (Bytes) 256 Speed (MHz) 16, 20 n Vectored, Prioritized Interrupts with Programmable Polarity n Two Analog Comparators


    Original     		Z86C66 CP96DZ82500 16KROMMICROCONTROLLER 44-Pin Z86C66 PDF

    M8360

    Abstract: No abstract text available
    Text: S T M8360 S amHop Microelectronics C orp. May.15,2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 35V 7A R DS (ON) ( m Ω ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -35V -5A R DS (ON) ( m Ω )


    Original     		M8360 M8360 PDF

    stu309d

    Abstract: stu309 s t u 309d U309D
    Text: S T U309D S amHop Microelectronics C orp. Nov 22 2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (P -C hannel) P R ODUC T S UMMAR Y (N-C hannel) R DS (ON) ( m Ω ) V DS S ID 30V 18A Max V DS S ID -30V -14A R DS (ON) ( m Ω )


    Original     		U309D O-252-4L STU309D O-252-4L stu309d stu309 s t u 309d U309D PDF

    Untitled

    Abstract: No abstract text available
    Text: S T M8454 S amHop Microelectronics C orp. Aug.18,2006 Dual E nhancement Mode Field E ffect Transistor N and P Channel P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 40V 5.8A R DS (ON) ( m W ) P R ODUC T S UMMAR Y (P -C hannel) Max V DS S ID -40V -5A R DS (ON) ( m W )


    Original     		M8454 PDF

    LT1257

    Abstract: LT485 AN6752 OP227 "direct replacement" ltc1097 an6266 AN2544 LTC201 spice AN6677 AN1523
    Text: SUBJECT INDEX Subject Index to Linear Technology’s Applications Circuits A GUIDE TO THE INDEX Linear Technology has made a major effort to address a wide variety of circuit topics. The number of application problems solvable with innovative circuit techniques or new linear integrated circuits continues to grow. This comprehensive index includes


    Original     		DN134) LT1016, LT1097, LT1222 LT1166, LT1431 LT1172, LT1006 LT1013, LT1088, LT1257 LT485 AN6752 OP227 "direct replacement" ltc1097 an6266 AN2544 LTC201 spice AN6677 AN1523 PDF

    IXTP18N60PM

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTP18N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600 V = 9 A Ω ≤ 420 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		IXTP18N60PM O-220 IXTP18N60PM PDF

    IXTP14N60PM

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTP14N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600 V = 7 A Ω ≤ 550 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		IXTP14N60PM O-220 14N60P 8-21-06E IXTP14N60PM PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET ISOPLUS220TM IXTC 26N50P VDSS = 500 V = 15 A ID25 Ω RDS on ≤ 260 mΩ (Electrically Isolated Tab) N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		ISOPLUS220TM 26N50P Isolated55 2-06-05-A PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET Power MOSFET ISOPLUS 220TM IXFC 26N50P VDSS = = ID25 RDS on ≤ ≤ trr (Electrically Isolated Tab) 500 V 15 A Ω 260 mΩ 250 ns N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS


    Original     		220TM 26N50P 02-09-06-B PDF

    ISS82

    Abstract: ESI 252 impedance meter D2240NL TO252and
    Text: S T U/D2240NL S amHop Microelectronics C orp. Nov 22,2004 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 35@ V G S = 10V


    Original     		U/D2240NL O-252 O-251 O-252AA Tube/TO-252 O-252 ISS82 ESI 252 impedance meter D2240NL TO252and PDF

    10M45s

    Abstract: IXCP10M45S 78L05 D-PAK of 78l05 TL 78l05 78L05 TO-220 IXCP35M35
    Text: High Voltage Current Regulators C urrent Regulator Non switchable regulators BV*DS *0 P min. typ. V mA 350 10 20 35 Switchable regulators 450 TO-251 AA TO -220 AB TO -252 AA ,2 ’ - 0 12 3 3 IXCP 10M 35 IXCP 20M 35 IXCP 35M 35 IXCU 10M35 IXCU 20M 35 IXC U 35M35


    OCR Scan     		O-251 10M45S 10M35 35M35 10M45s IXCP10M45S 78L05 D-PAK of 78l05 TL 78l05 78L05 TO-220 IXCP35M35 PDF

    OS-319

    Abstract: DS1095
    Text: Two-Way Power Divider 10-500 MHz DS-109/319 TO-8-2 • 1 ° Phase Balance Max ■ 35 dB Typical Midband Isolation ■ 1.1 Typical Midband VSW R FP-2 PIN 0.015 OIA ±0.005 0.3t ±0.13 8 PLACES 12 0.312 MIN TYP. (7.9 MIN) 3 4 i t 7» tOOSO p * t 0 *> Guaranteed Specifications*


    OCR Scan     		DS-109/319 DS-109 DS-319 IL-STD-883 DS-109 DS-319 OS-319 DS1095 PDF

    cfy 14 siemens

    Abstract: CFY 18 CFY 10 cfy siemens CFY12 CFY10 CFY 18-23
    Text: SIEMENS AKTIENGESELLSCHAF QBE D • fl23SbDS QOlSb?*} T H S I E G 7~“3/-^5' GaAs FETs Gallium Arsenide Field-Effect Transistors Metal Ceram ic Packages Type Max. ratings V ds V 5 CFY 10 5 CFY 11 CFY 12 5 0 CFY 19-18 6 □ CFY 19-22 6 □ CFY 19-27 6 CFY 18-12 5


    OCR Scan     		fl23SbDS cfy 14 siemens CFY 18 CFY 10 cfy siemens CFY12 CFY10 CFY 18-23 PDF

    PF3819

    Abstract: PF5459 F4222 PF382 PF3823 TMPF4392 F4416
    Text: N-CHANNEL JFETs S O T -23/T O -236A B 3 E LEC TR IC A L CHARACTERISTICS a t T A = 25 C v V BR>GSS QS off Limits ^GSS Conditions cRSS C ss *DSS r DS Device Type Min @ IQ Max. @ V DS (V ) (m A ) (n A ) (V ) Min. Max. (V ) (V ) V DS Min. Max. (m A ) (V ) (n A )


    OCR Scan     		-23/T -236A TMPFU1899 PF3819 PF5459 F4222 PF382 PF3823 TMPF4392 F4416 PDF

    TELEDYNE CRYSTALONICS

    Abstract: 2N4447 2N4445 cgel CP650 2N4448 CP653 N4446 2n4446
    Text: CP650 thru CP653 2N4445 thru 2N4448 TYPICAL CHARACTERISTICS GATE LEAKAGE CURRENT VS. TEMPERATURE < > o ►O < i o oc Z -20 - -2 5 +50 TEMPERATURE Ro~ INCREASES +75 too -120 (°C TEMPERATURE 0 .7 % / ° C I gss JUNCTION CAPACITANCE VS. VOLTAGE (°Q DOUBLES EACH !0 ° C


    OCR Scan     		CP650 CP653 2N4445 2N4448 TELEDYNE CRYSTALONICS 2N4447 cgel 2N4448 N4446 2n4446 PDF

    Z86C30

    Abstract: Z86C31 Z86C32 Z86C40 C16P04 GND03
    Text: PRELIMINARY CUSTOMER PROCUREMENT SPECIFICATION « 2 ÍL 0 B Z86C30/C31 /C32/C40 C M O S Z8 CONSUMER Co n tro ller FEATURES Part ROM KB RAM* (Byte) Speed (MHz) 4 2 2 4 237 125 237 236 16 12 12 16 Z86C30 Z86C31 Z86C32 Z86C40 pro cesso r • Expanded Register File (ERF)


    OCR Scan     		Z86C30 Z86C31 Z86C32 Z86C40 28-Pin Z86C3X) 40-Pin 44-Pin C16P04 GND03 PDF