IPU25CNE8N Search Results

IPU25CNE8N Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IPU25CNE8NG		Infineon Technologies	Transistor Mosfet N-CH 85V 35A PG-TO251-3		Original	PDF

IPU25CNE8N Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IEC61249-2-21 Abstract: IPP26CNE8N 25CNE8N Text: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	IPB26CNE8N IPD25CNE8N IPI26CNE8N IPP26CNE8N IPU25CNE8N IEC61249-2-21 IEC61249-2-21 25CNE8N	PDF
IPP26CNE8N Abstract: d35 marking marking d35 25CNE8N Text: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	IPB26CNE8N IPD25CNE8N IPI26CNE8N IPP26CNE8N IPU25CNE8N d35 marking marking d35 25CNE8N	PDF
Untitled Abstract: No abstract text available Text: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO252) 25 m: ID 35 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)	Original	IPB26CNE8N IPD25CNE8N IPI26CNE8N IPP26CNE8N IPU25CNE8N	PDF
IPP26CNE8N Abstract: D35AV marking d35 25CNE8N 26CNE8N c25 diode to220 Text: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	IPB26CNE8N IPD25CNE8N IPI26CNE8N IPP26CNE8N IPU25CNE8N D35AV marking d35 25CNE8N 26CNE8N c25 diode to220	PDF
IPP26CNE8N Abstract: ATO-251 Text: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	IPB26CNE8N IPD25CNE8N IPI26CNE8N IPP26CNE8N IPU25CNE8N ATO-251	PDF
DD40 Abstract: No abstract text available Text: IPB26CNE8N G IPD25CNE8N G IPI26CNE8N G IPP26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	IPB26CNE8N IPD25CNE8N IPI26CNE8N IPP26CNE8N IPU25CNE8N DD40	PDF