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    26CN10N

    Abstract: IPB26CN10NG IPI26CN10NG IPP26CN10NG 25CN10N IPB26CN10N IPI26CN10N IPP26CN10N IPU25CN10N IPP26CN10N G
    Text: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original
    IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IPU25CN10N 26CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG 25CN10N IPP26CN10N G PDF

    25CN10N

    Abstract: IPB26CN10NG IPI26CN10NG IPP26CN10NG
    Text: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original
    IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IPU25CN10N 25CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG PDF

    IPB26CN10NG

    Abstract: IPI26CN10NG IPP26CN10NG
    Text: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features V DS 100 V • N-channel, normal level R DS on ,max (TO252) 25 m: ID 35 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)


    Original
    IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IPU25CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG PDF

    25CN10N

    Abstract: 26CN10N IPB26CN10N IPU25CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG IPD25CN10N G IPI26CN10N IPP26CN10N
    Text: IPB26CN10N G IPD25CN10N G IPI26CN10N G IPP26CN10N G IPU25CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)


    Original
    IPB26CN10N IPD25CN10N IPI26CN10N IPP26CN10N IPU25CN10N 25CN10N 26CN10N IPB26CN10NG IPI26CN10NG IPP26CN10NG IPD25CN10N G PDF