ISS82
Abstract: ESI 252 impedance meter D2240NL TO252and
Text: S T U/D2240NL S amHop Microelectronics C orp. Nov 22,2004 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 35@ V G S = 10V
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Original
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PDF
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U/D2240NL
O-252
O-251
O-252AA
Tube/TO-252
O-252
ISS82
ESI 252 impedance meter
D2240NL
TO252and
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Untitled
Abstract: No abstract text available
Text: S T U/D2240NL S amHop Microelectronics C orp. Nov 22,2004 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable. 35@ V G S = 10V
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Original
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PDF
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U/D2240NL
O-252
O-251
O-252AA
Tube/TO-252
O-252
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Untitled
Abstract: No abstract text available
Text: S T U/D2240NL S amHop Microelectronics C orp. Nov 22,2004 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 35@ V G S = 10V
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Original
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PDF
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U/D2240NL
O-252
O-251
O-252AA
O-252
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D2640
Abstract: No abstract text available
Text: S T U/D2640NL S amHop Microelectronics C orp. May,13 2005 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 25@ V G S = 10V
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Original
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PDF
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U/D2640NL
O-252
O-251
O-252AA
Tube/TO-252
O-252
D2640
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