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Infineon Technologies AG IPP26CNE8N-G MOSFET N-CH 85V 35A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPP26CNE8N-G	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IPP26CNE8NG Power Field-Effect Transistor, 35A I(D), 85V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	IPP26CNE8NG		300			1 - 10 - 100 - 1000 - 10000 -	Get Quote

26CNE8N Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IEC61249-2-21 Abstract: IPP26CNE8N 25CNE8N Text: 26CNE8N G IPD25CNE8N G 26CNE8N G 26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	IPB26CNE8N IPD25CNE8N IPI26CNE8N IPP26CNE8N IPU25CNE8N IEC61249-2-21 IEC61249-2-21 25CNE8N	PDF
IPP26CNE8N Abstract: d35 marking marking d35 25CNE8N Text: 26CNE8N G IPD25CNE8N G 26CNE8N G 26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	IPB26CNE8N IPD25CNE8N IPI26CNE8N IPP26CNE8N IPU25CNE8N d35 marking marking d35 25CNE8N	PDF
Untitled Abstract: No abstract text available Text: 26CNE8N G IPD25CNE8N G 26CNE8N G 26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO252) 25 m: ID 35 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)	Original	IPB26CNE8N IPD25CNE8N IPI26CNE8N IPP26CNE8N IPU25CNE8N	PDF
IPP26CNE8N Abstract: D35AV marking d35 25CNE8N 26CNE8N c25 diode to220 Text: 26CNE8N G IPD25CNE8N G 26CNE8N G 26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	IPB26CNE8N IPD25CNE8N IPI26CNE8N IPP26CNE8N IPU25CNE8N D35AV marking d35 25CNE8N 26CNE8N c25 diode to220	PDF
IPP26CNE8N Abstract: ATO-251 Text: 26CNE8N G IPD25CNE8N G 26CNE8N G 26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	IPB26CNE8N IPD25CNE8N IPI26CNE8N IPP26CNE8N IPU25CNE8N ATO-251	PDF
DD40 Abstract: No abstract text available Text: 26CNE8N G IPD25CNE8N G 26CNE8N G 26CNE8N G IPU25CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO252) 25 mΩ ID 35 A • Very low on-resistance R DS(on)	Original	IPB26CNE8N IPD25CNE8N IPI26CNE8N IPP26CNE8N IPU25CNE8N DD40	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819	PDF