DQ111
Abstract: DQ139 DQ131
Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply
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UGSN7004A8HHF-256
2000mil)
256MB
256MB
200pin
128MB
200-Pin
DIMM25
DQ120
DQ121
DQ111
DQ139
DQ131
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BA5 marking
Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package
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HMD4M144D9WG
64Mbyte
4Mx144)
200-pin
HMD4M144D9WG
144bit
4Mx16bit
50-pin
16bit
BA5 marking
DQ112-127
BA7 marking
DQ113
BA6 marking
BA6137
DQ99
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Untitled
Abstract: No abstract text available
Text: UG08E14488HSG-6 128M Bytes 8M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U08E14488HSG-6 is a 8M x 144 200pin DIMM. The module is organized as a 8M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 18 pcs 8M x 8
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UG08E14488HSG-6
200Pin
U08E14488HSG-6
400mil
16bit
240mil
2000mil)
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TOP SIDE MARKING OF MICRON
Abstract: 48-PIN MT28F004B3 MT28F400B3
Text: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V Only, Dual Supply Smart 3 FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3):
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MT28F004B3
MT28F400B3
16KB/8K-word
MT28F400B3,
16/512K
MT28F400B3
MT28F004B3
TOP SIDE MARKING OF MICRON
48-PIN
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MT28F004B3
Abstract: MT28F400B3
Text: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V ONLY, DUAL SUPPLY SMART 3 Features • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3):
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MT28F004B3
MT28F400B3
16KB/8K-word
MT28F400B3,
16/512K
MT28F400B3
MT28F004B3
09005aef8114a789
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48-PIN
Abstract: MT28F004B3 MT28F400B3
Text: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V Only, Dual Supply Smart 3 FEATURES • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3):
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MT28F004B3
MT28F400B3
16KB/8K-word
MT28F400B3,
16/512K
MT28F400B3
MT28F004B3
48-PIN
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PDF
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09005aef8114a789
Abstract: MT28F004B3 MT28F400B3
Text: 4Mb SMART 3 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B3 MT28F400B3 3V ONLY, DUAL SUPPLY SMART 3 Features • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks • Smart 3 technology (B3):
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MT28F004B3
MT28F400B3
16KB/8K-word
MT28F400B3,
16/512K
MT28F400B3
MT28F004B3
09005aef8114a789
09005aef8114a789
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PDF
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MT28F004B5
Abstract: MT28F400B5 Micron 4Mb NOR FLASH MT28F400B5SG-8B
Text: 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 0.3µm Process Technology FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks
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MT28F004B5
MT28F400B5
40-Pin
48-Pin
16KB/8K-word
MT28F400B5,
16/512K
MT28F004B5
MT28F400B5
Micron 4Mb NOR FLASH
MT28F400B5SG-8B
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MT28F004B5
Abstract: MT28F400B5 TAA370
Text: 4Mb SMART 5 BOOT BLOCK FLASH MEMORY FLASH MEMORY MT28F004B5 MT28F400B5 5V Only, Dual Supply Smart 5 FEATURES 40-Pin TSOP Type I 48-Pin TSOP Type I • Seven erase blocks: 16KB/8K-word boot block (protected) Two 8KB/4K-word parameter blocks Four main memory blocks
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MT28F004B5
MT28F400B5
40-Pin
48-Pin
16KB/8K-word
MT28F400B5,
16/512K
MT28F004B08
MT28F004B5
MT28F400B5
TAA370
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Untitled
Abstract: No abstract text available
Text: UG08C14488HSG Revision History Jan 13 , 2000 Rev - A Datasheet released. 45388 Warm Springs Blvd. Fremont, CA. 94539 Tel: 510 668-2088 Fax: (510) 661-2788 support@unigen.com Re-Tek- 561_MT UG08C14488HSG 128M Bytes (8M x 144) DRAM 200Pin DIMM w/ECC based on 8M x 8
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UG08C14488HSG
200Pin
U08C14488HSG
400mil
16bit
240mil
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D0139
Abstract: D0142 f d0142 OG144 DG139 DG142 DG143 DG145 DG146 DG161
Text: D G 139, D G 142 — DG146, DG161 — D G 164 Drivers w ith Differentially Driven N.O. and N.C. FET Switches FEATURES GENERAL DESCRIPTION • Each package contains a m o n o lith ic driver w ith differential in p u t and 2 o r 4 discrete FET switches. The driver may be
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DG139,
DG142
DG146,
DG161
DG164
DG145and
DG146
DG161,
D0139
D0142
f d0142
OG144
DG139
DG143
DG145
DG146
DG161
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zl6 zener
Abstract: Z35 zener LG color tv Circuit Diagram AN5365FBP Capacitor 47 VFK V22H circuit diagram of chroma 252 zener 47 AN3456 AN5365
Text: Panasonic ICs fo r TV AN5365FBP Video Signal Processor 1C for Combined-TV/VCR • Overview T he A N 5 3 6 5 FB P is a vid eo signal p ro cesso r 1C to process lum inance, chroma, and synchronization signals for combined N T SC T V and V C R set. ■ Features
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AN5365FBP
AN5365FBP
640mW
AN3456
b132fl52
bT356S2
0G1431D
zl6 zener
Z35 zener
LG color tv Circuit Diagram
Capacitor 47 VFK
V22H
circuit diagram of chroma 252
zener 47
AN5365
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capacitor 22 vfk
Abstract: AN5365FBP V22H 604Hz BT320 zl6 zener
Text: Panasonic ICs fo r TV AN5365FBP Video Signal Processor 1C for Combined-TV/VCR • Overview T he A N 5 3 6 5 FB P is a vid eo signal p ro cesso r 1C to process lum inance, chroma, and synchronization signals for combined N T SC T V and V C R set. ■ Features
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AN5365FBP
640mW
AN3456
32fl52
b1356S2
0G1431D
capacitor 22 vfk
V22H
604Hz
BT320
zl6 zener
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RCM7037X
Abstract: No abstract text available
Text: RCM7037X 16 characters x 2 line reflective-type, character module RCM7037X is a reflection STN gray-mode type liquid crystal module incorporating a controller and driver LSI with a display capacity of 16 characters on each of two lines. • character pattern selected can be
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RCM7037X
RCM7037X
GD14SS2
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