DQ111
Abstract: DQ139 DQ131
Text: UGSN7004A8HHF-256 Data sheets can be downloaded at www.unigen.com 256MB 8M x 144 2PCS FPM MODE DRAM MODULE FPM Mode buffered DIMM With ECC based on 18 pcs 8M x 8 DRAM with LVTTL, 8K Refresh 256MB 200pin DIMM (2PCS 128MB (8M x 144) module kit) FEATURES Single 5.0V ± 10% power supply
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UGSN7004A8HHF-256
2000mil)
256MB
256MB
200pin
128MB
200-Pin
DIMM25
DQ120
DQ121
DQ111
DQ139
DQ131
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DQ111
Abstract: No abstract text available
Text: SM544083U74S6UU June 6, 2000 Revision History • June 9, 2000 Added Command Truth Table, Mode Register Table and notes. Modified waveforms Auto Refresh (CBR cycle and Power Down Mode and Clock Mask). • March 24, 1999 Datasheet released. Corporate Headquarters: P. O. Box 1757, Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
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SM544083U74S6UU
128MByte
4Mx16
DQ111
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Untitled
Abstract: No abstract text available
Text: SM544028002BXGU September 1996 Rev 0 SMART Modular Technologies SM544028002BXGU 32MByte 2M x 144 CMOS DRAM Module - Buffered General Description Features The SM544028002BXGU is a high performance, 32-megabyte dynamic RAM module organized as 2M words by 144 bits, in a 100-pin, dual readout, leadless,
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SM544028002BXGU
32MByte
32-megabyte
100-pin,
72-bit
70/80ns
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BA5 marking
Abstract: DQ112-127 BA7 marking HMD4M144D9WG DQ113 BA6 marking BA6137 DQ99
Text: HANBit HMD4M144D9WG 64Mbyte 4Mx144 200-pin ECC Mode 4K Ref. DIMM Design 5V Part No. HMD4M144D9WG GENERAL DESCRIPTION The HMD4M144D9WG is a 4Mbit x 144bit dynamic RAM high-density memory module. The module consists of eight CMOS 4Mx16bit DRAMs in 50-pin TSOP packages and one CMOS 4M x 16bit DRAM in 50pin TSOP package
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HMD4M144D9WG
64Mbyte
4Mx144)
200-pin
HMD4M144D9WG
144bit
4Mx16bit
50-pin
16bit
BA5 marking
DQ112-127
BA7 marking
DQ113
BA6 marking
BA6137
DQ99
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PDF
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29lv400
Abstract: No abstract text available
Text: PRELIMINARY Am29LV400T/Am29LV400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 3.0 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • 2.7 to 3.6 volt, extended voltage range for read and write operations — Minimizes system-level power requirements
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Am29LV400T/Am29LV400B
8-Bit/262
16-Bit)
48-pin
44-pin
44-Pin
16-038-SO44-2
29lv400
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DQ2060
Abstract: DC1065 EB285 EBSA-285 R164 SA110 B20B20 A59A59 CPU-A13 CPUD22
Text: A B C D COPYRIGHT C 8 1997 DIGITAL EQUIPMENT CORPORATION 8 16 17 18 19 20 21 sht sht sht sht sht sht 7 CHK CHANGE NO. REV CPU, CPU_, a Block Address X-Bus XBUF_, have PCI +3V Stand - +2V, - - - TAG_,RST_ - - 6 bidirects this 5 is Debug Port their Serial Spare
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ebsa285
220PF
RS232
DQ2060
DC1065
EB285
EBSA-285
R164
SA110
B20B20
A59A59
CPU-A13
CPUD22
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PDF
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Untitled
Abstract: No abstract text available
Text: UG016C14488HSG-6 256M Bytes 16M x 144 DRAM 200Pin DIMM w/ECC based on 8M x 8 General Description Features The U016C14488HSG-6 is a 16M x 144 200pin DIMM. The module is organized as a 16M x 144 high speed memory array and optimized for use in ECC applications. This module consist of 36 pcs 8M x 8
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UG016C14488HSG-6
200Pin
U016C14488HSG-6
400mil
20bit
240mil
2560mil)
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MT18DT8144G
Abstract: No abstract text available
Text: 8 MEG x 144 BUFFERED DRAM DIMM DRAM MODULE MT18DT8144G For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES PIN ASSIGNMENT • • • • • • • 200-pin, dual in-line memory module DIMM
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200-pin,
128MB
192-cycle
MT18DT8144G
DQ995
MT18DT8144G
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smart modular
Abstract: SMART Modular Technologies SM51441000-7 SM51441000-8
Text: SM51441000 August 1994 Rev 1 SMART Modular Technologies SM51441000 16MByte 1M x 144 CMOS DRAM Module General Description Features The SM51441000 is a high performance, 16-megabyte dynamic RAM module organized as 1M words by 144 bits, in a 100-pin, dual readout, leadless, single-in-line
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SM51441000
16MByte
SM51441000
16-megabyte
100-pin,
72-bit
70/80ns
20/18W
smart modular
SMART Modular Technologies
SM51441000-7
SM51441000-8
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Untitled
Abstract: No abstract text available
Text: Preliminary W29L102 64K X 16 CMOS FLASH MEMORY G ENERAL DESCRIPTION The W29L102 is a 1-megabit, 3.3-volt only CMOS tlash memory organized as 64K x 16 bits. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt Vpp is
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W29L102
W29L102
12-volt
77nCSf;
8fjg-8-i57S5fjft8
SS2-275131QS
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1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE
Abstract: No abstract text available
Text: HB56HW164DB Series, HB56HW165DB Series 1,048,576-word x 64-bit High Density Dynamic RAM Module HITACHI ADE-203-699B Z Rev.2.0 Jun. 5, 1997 Description The HB56HW164DB is a 1M x 64 dynamic RAM Small Outline Dual In-line Memory Module (S.O.DIMM), mounted 4 pieces of 16-Mbit DRAM (HM51W16165) sealed in TSOP package and 1 pieces
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HB56HW164DB
HB56HW165DB
576-word
64-bit
ADE-203-699B
16-Mbit
HM51W16165)
24C02)
1M x 16 16-MBIT DYNAMIC RAM WITH EDO PAGE MODE
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMD£I Am29LV800T/Am29LV800B 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 3.0 Volt-only, Sectored Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ ■ — Extended voltage range: 2.7 to 3.6 volt read and write operations for battery-powered
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OCR Scan
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Am29LV800T/Am29LV800B
8-Bit/524
16-Bit)
5555H
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PDF
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kx-5t
Abstract: ZTE0
Text: bSE D • SSÖ'ibbS QGlüllH Features • Supports 50-MHz Pentium proces sor cache systems with zero wait states • 64K by 18 common I/O • Fast clock-to-output times — 12.5 ns with 0-pF load —■ 14 ns with 85-pF load • Two-bit w raparound counter support
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CY7C1331
CY7C1332
50-MHz
85-pF
7C1331)
7C1332)
52-pin
kx-5t
ZTE0
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am29LL800T/Am29LL800B AMDZ1 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 2.2 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range— 2.2 V to 2.7 V for read and write operations — Embedded Program algorithms automatically
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Am29LL800T/Am29LL800B
8-Bit/524
16-Bit)
48-pin
29LV200â
LL800â
Am29LL800T
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Untitled
Abstract: No abstract text available
Text: 000 BU-65170/61580 and BU-61585 ILC DATA DEVICE CORPORATION MIL-STD-1553A/B NOTICE 2 RT and BC/RT/MT, ADVANCED COMMUNICATION ENGINE ACE ACE User’s Guide Also Available D E S C R IP T IO N FEATURES • Fully Integrated Bus Interface D D C ’s B U -651 70, B U -6 1 5 8 0 a n d
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BU-65170/61580
BU-61585
MIL-STD-1553A/B
BU-61585
MIL-STD1553
70-pin,
70-pin
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80000h8
Abstract: No abstract text available
Text: P R E L IM IN A R Y Am29 LL800T/Am29 LL800B A M D tl 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 2.2 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range— 2.2 V to 2.7 V for read and write operations — Embedded Program algorithms automatically
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LL800T/Am29
LL800B
Am29LL800B
10000h,
20000h,
06000h.
30000h,
08000h.
40000h,
10OOOh.
80000h8
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMD* Am29LV400T/Am29LV400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 3.0 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • 2.7 to 3.6 volt, extended voltage range for read and write operations — Minimizes system-level power requirements
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OCR Scan
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Am29LV400T/Am29LV400B
8-Bit/262
16-Bit)
48-pin
44-Pin
16-038-S044-2
25752A
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMD£I Am29LV800T/Am29LV800B 8 Megabit 1,048,576 X 8-Bit/524,288 X 16-Bit CMOS 3.0 Volt-only, Sectored Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ Embedded Algorithms — Extended voltage range: 2.7 to 3.6 volt read and
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OCR Scan
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Am29LV800T/Am29LV800B
8-Bit/524
16-Bit)
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PDF
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY — Am29LV200T/Am29LV200B A M D tl 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 3.0 Volt-only Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ ■ — Extended voltage range: 2.7 to 3.6 volt read and
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OCR Scan
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Am29LV200T/Am29LV200B
8-Bit/131
16-Bit)
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PDF
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29LV200
Abstract: 29LV200B
Text: P R E L IM IN A R Y . A M D Cl Am29LV200T/Am29LV200B 2 M e g a b i t 2 6 2, 14 4 x 8 - B i t /1 3 1 ,0 7 2 x 16-Bit C M O S 3.0 Volt-only S e c t o r A r c h i te c tu r e Flash M e m o r y DISTINCTIVE C HA R A C TER ISTIC S • ■ Single power supply operation
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Am29LV200T/Am29LV200B
16-Bit)
29LV2Û
29LV2Ô
29LV200
29LV200B
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PDF
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CY7C1352
Abstract: MCM63Z818 MCM63Z819
Text: CY7C1352 V CYPRESS 256K x18 Pipelined SRAM with NoBL Architecture • Low s ta n d b y p ow er Features • Pin c o m p a tib le and fu n c tio n a lly eq u iv alen t to ZB T™ d evic es M C M 6 3Z 81 8 and M T 55L 25 6L 18 P • S u p p o rts 14 3 -M H z bus o p e ra tio n s w ith zero w a it states
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CY7C1352
MCM63Z818
MT55L256L18P
143-MHz
133-MHz
100-MHz
80-MHz
CY7C1352
MCM63Z819
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PDF
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km418c256
Abstract: KM418C256/L/SL-7
Text: KM418C256/L/SL CMOS DRAM 2 5 6 K x 18 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM418C256/L/SL is a CMOS high speed 262,144 bit x 18 Dynamic Random Access Memory. Its design is optimized for high performance applications
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KM418C256/L/SL
KM418C256/L/SL-7
KM418C256/L/SL-8
KM418C256/USL-10
100ns
130ns
150ns
180ns
KM418C256/USL
KM418C256/L/SL
km418c256
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Untitled
Abstract: No abstract text available
Text: " TÍ d ÍTB b24tiñEti 0010103 MITSUBISHI SEMICONDUCTOR <GaAs FET> MITSUBISHI {DISCRETE SC> ñ MGF2148F FOR MICROWAVE POWER AM PLIFIERS CHIP-CARRIER T Y P E 624 98 29 MITSUBISHI DISCRETE SC 91D 10103 DT'W-ôl DESCRIPTION The M G F2 14 8F combines the advantages of the least
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MGF2148F
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY AMD£I Am29LV800T/Am29LV800B 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 3.0 Volt-only, Sectored Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ ■ — Extended voltage range: 2.7 to 3.6 volt read and write operations for battery-powered
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OCR Scan
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Am29LV800T/Am29LV800B
8-Bit/524
16-Bit)
5555H
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PDF
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