K7Z327285M
Abstract: No abstract text available
Text: K7Z327285M Preliminary 512Kx72 DLW Double Late Write RAM Document Title 512Kx72 DLW(Double Late Write) RAM Revision History Rev. No. 0.0 0.1 History Draft Date Remark 1. Initial document. 1. Device name change from Double Late Write SigmaRAM to Double Late Write RAM
|
Original
|
K7Z327285M
512Kx72
512Kx72
11x19
00x10
00x18
K7Z327285M
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ispLever CORE TM Double Data Rate DDR SDRAM Controller (Pipelined Version) User’s Guide June 2004 ipug12_03 Double Data Rate (DDR) SDRAM Controller (Pipelined Version) User’s Guide Lattice Semiconductor Introduction DDR (Double Data Rate) SDRAM was introduced as a replacement for SDRAM memory running at bus speeds
|
Original
|
ipug12
75MHz.
1-800-LATTICE
|
PDF
|
NtRAM
Abstract: BGA package tray 64
Text: High Speed SRAM Code Information 1/4 Last Updated : November 2008 K7XXXXXXXX - XXXXXXX 1 2 3 4 5 6 1. Memory (K) 2. Sync SRAM : 7 3. Small Classification A : Sync Pipelined Burst B : Sync Burst D : Double Data Rate I : Double Data Rate II, Common I/O J : Double Data Rate II, Seperate I/O
|
Original
|
TSOP2-400
NtRAM
BGA package tray 64
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DoublePole StandardEnvironment Limit Switches Limit Switches Standard EA170 Double pole, double break, double throw, heavy duty limit switch having mechanical travel of 10° to trip and with two normally open and two normally closed circuits. Can be furnished with
|
Original
|
EA170)
1-800-NAMTECH
|
PDF
|
ZJY-M4A
Abstract: tdk zjy-M4A ISO7816-3 PDIUSBD12 TDA8008 AN00010 PDIUSBD12 schematic USB Smart Card Reader "USB reader"
Text: APPLICATION NOTE TDA8008 Mask D06 DOUBLE USB SMART CARD READER AN/00010 Philips Semiconductors Application Note AN00010 TDA8008H mask D 06 Double usb smart card reader ABSTRACT This document describes the software specifications that have been developed for the double USB smart
|
Original
|
TDA8008
AN/00010
AN00010
TDA8008H
PDIUSBD12.
TDA8008,
ZJY-M4A
tdk zjy-M4A
ISO7816-3
PDIUSBD12
AN00010
PDIUSBD12 schematic
USB Smart Card Reader
"USB reader"
|
PDF
|
Untitled
Abstract: No abstract text available
Text: HYDROSTATIC RESERVOIR SENSORS Fiberglass, Double-Wall Tank Reservoir Monitoring RISER PIPE LVLK800 LIQUID MONITORING FLUID RESERVOIR DOUBLE WALL TANK LVLK800 Series $ Shown Smaller Than Actual Size 125 ߜ For Brine or Glycol-Filled Reservoirs ߜ High and Low Liquid
|
Original
|
LVLK800
LVLK800
K-115
LVLK801
K-116
|
PDF
|
256Kx72
Abstract: EP-3 ae2a
Text: Preliminary 256Kx72 Double Late Write SigmaRAMTM K7N167285A 256Kx72-Bit Pipelined SigmaRAMTM FEATURES GENERAL DESCRIPTION • Double Late Write mode , Pipelined Read mode. • 1.8V+150/-100 mV Power Supply. • 1.8V I/O supply. • Byte Writable Function.
|
Original
|
256Kx72
K7N167285A
256Kx72-Bit
209BGA
11x19
K7N167285A
368-bits
EP-3
ae2a
|
PDF
|
circuit diagram water level INFRARED sensor
Abstract: No abstract text available
Text: DISCRIMINATING LIQUID SENSOR for Interstitial Applications Shown Actual Size Double-Wall Tanks, Containment Sumps, and Double-Wall Pipes Applications Integral Pull Your Controls Containment S ump Model LV132 $ 160 MADE IN USA ߜ Three Distinct Outputs: Dry, Water Present, Fuel
|
Original
|
LV132
LV132
circuit diagram water level INFRARED sensor
|
PDF
|
CKE 2009
Abstract: M13S128168A
Text: ESMT M13S128168A Operation temperature condition -40°C~85°C DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS
|
Original
|
M13S128168A
CKE 2009
M13S128168A
|
PDF
|
ECHO schematic diagrams
Abstract: GS8170DD36 GS8170DD36C-250 GS8170DD36C-300 GS8170DD36C-300I GS8170DD36C-333 GS8170DD36C-333I
Text: GS8170DD36C-333/300/250/200 209-Bump BGA Commercial Temp Industrial Temp 18Mb Σ1x2Lp CMOS I/O Double Data Rate SigmaRAM Features • Double Data Rate Read and Write mode • Late Write; Pipelined read operation • JEDEC-standard SigmaRAM™ pinout and package
|
Original
|
GS8170DD36C-333/300/250/200
209-Bump
209-bump,
144Mb
8170DD18
ECHO schematic diagrams
GS8170DD36
GS8170DD36C-250
GS8170DD36C-300
GS8170DD36C-300I
GS8170DD36C-333
GS8170DD36C-333I
|
PDF
|
CKE 2009
Abstract: M13S64164A CL301
Text: ESMT M13S64164A Operation Temperature Condition -40°C~85°C DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS
|
Original
|
M13S64164A
CKE 2009
M13S64164A
CL301
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ESM T M13S5121632A 2A DDR SDRAM 8M x 16 Bit x 4 Banks Double Data Rate SDRAM Features JEDEC Standard Internal pipelined double-data-rate architecture, two data access per clock cycle Bi-directional data strobe (DQS) On-chip DLL Differential clock inputs (CLK and CLK )
|
Original
|
M13S5121632A
|
PDF
|
46LR16200C
Abstract: Mobile DDR SDRAM 43LR16200C
Text: IS43LR16200C 1M x 16Bits x 2Banks Mobile DDR SDRAM Description The IS43LR16200C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N
|
Original
|
IS43LR16200C
16Bits
IS43LR16200C
IS43LR16200C-6BL
60-ball
IS43LR16200C-6BLI
-40oC
2Mx16
46LR16200C
Mobile DDR SDRAM
43LR16200C
|
PDF
|
Mobile DDR SDRAM
Abstract: 43LR32100C IS43LR32100C
Text: IS43LR32100C Advanced Information 512K x 32Bits x 2Banks Mobile DDR SDRAM Description The IS43LR32100C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N
|
Original
|
IS43LR32100C
32Bits
IS43LR32100C
1Mx32
IS43LR32100C-6BL
90-ball
IS43LR32100C-6BLI
Mobile DDR SDRAM
43LR32100C
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: ESMT M13S128168A DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK )
|
Original
|
M13S128168A
|
PDF
|
esmt m13s2561616a
Abstract: M13S2561616A
Text: ESMT M13S2561616A DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK )
|
Original
|
M13S2561616A
esmt m13s2561616a
M13S2561616A
|
PDF
|
M13S32321A
Abstract: No abstract text available
Text: ESMT M13S32321A DDR SDRAM 256K x 32 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK )
|
Original
|
M13S32321A
M13S32321A
|
PDF
|
M13S128168A
Abstract: No abstract text available
Text: ESMT M13S128168A DDR SDRAM 2M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK )
|
Original
|
M13S128168A
M13S128168A
|
PDF
|
GS8170DD36
Abstract: GS8170DD36AC-200 GS8170DD36AC-250 GS8170DD36AC-300
Text: Preliminary GS8170DD36C-333/300/250/200 18Mb Σ1x2Lp CMOS I/O 209-Bump BGA Commercial Temp Industrial Temp 200 MHz–333 MHz 1.8 V VDD 1.8 V I/O Double Data Rate SigmaRAM Features • Double Data Rate Read and Write mode • Late Write; Pipelined read operation
|
Original
|
GS8170DD36C-333/300/250/200
209-Bump
209-bump,
GS8170DD36AC-300I
GS8170DD36AC-250I
GS8170DD36AC-200I
GS817xx72C-300T.
GS8170DD36
GS8170DD36AC-200
GS8170DD36AC-250
GS8170DD36AC-300
|
PDF
|
CKE 2009
Abstract: M13S64164A
Text: ESMT M13S64164A DDR SDRAM 1M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK )
|
Original
|
M13S64164A
CKE 2009
M13S64164A
|
PDF
|
46LR16200C
Abstract: Mobile DDR SDRAM
Text: IS43/46LR16200C 1M x 16Bits x 2Banks Mobile DDR SDRAM Description The IS43/46LR16200C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N
|
Original
|
IS43/46LR16200C
16Bits
IS43/46LR16200C
2Mx16
IS43LR16200C-6BL
60-ball
-40oC
IS43LR16200C-6BLI
46LR16200C
Mobile DDR SDRAM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IS43LR16200C Advanced Information 1M x 16Bits x 2Banks Mobile DDR SDRAM Description The IS43LR16200C is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N
|
Original
|
IS43LR16200C
16Bits
IS43LR16200C
2Mx16
IS43LR16200C-6BL
60-ball
IS43LR16200C-6BLI
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ADVANCE 64Mb: x32 DDR SDRAM MICRON' I TECHNOLOGY, INC. DOUBLE DATA RATE SDRAM MT46V2M32 - 512K x 32 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/mti/msp/html/datasheet.html FEATURES • Internal, pipelined double data rate DDR architec
|
OCR Scan
|
MT46V2M32
|
PDF
|
74LS547
Abstract: 74ls652 74LS654 74LS245 latch 74LS648 74LS651 54LS547 74ls546 74LS567 74LS647
Text: Tabi« of Contento DOUBLE-DENSITY PLUS INTERFACE Contents for Section 12 . Double-Density PLU S Selection Guide . Small But Mighty; New Components Give You More Logic in Less Chips .
|
OCR Scan
|
SN54/74LS245
SN54/74LS645
SN54/74LS645-1
SN54/74LS546
SN54/74LS547
SN54/74LS566
SN54/74LS567
SN54/74LS646
SN54/74LS647
54ACT648
74LS547
74ls652
74LS654
74LS245 latch
74LS648
74LS651
54LS547
74ls546
74LS567
74LS647
|
PDF
|