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    AD9172BBPZRL Analog Devices Dual,16bit,12GSPS RFDAC1500MSP Visit Analog Devices Buy
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    LTC2672HUH-16#TRPBF Analog Devices 5ch 300mA 16Bit CurrentSourceO Visit Analog Devices Buy
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    AD5760ACPZ-REEL7 Analog Devices 16bit, 2LSB, buffered Ref Visit Analog Devices Buy
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    ROHM Semiconductor BH1721FVC-TR

    Ambient Light Sensors Ambient Light Sensor Digital 16bit Serial
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    TTI BH1721FVC-TR Reel 12,000 3,000
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    16BITS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PcRam Description TS32MLE72V6K Dimensions The TS32MLE72V6K is a 32M bit x 72 Dynamic RAM Side Millimeters Inches high density memory module. The TS32MLE72V6K A 133.35±0.40 5.250±0.016 consists of 36pcs CMOS 16Mx4 bit DRAMs and 2pcs B 65.67000 2.585000 of 16bits driver mounted on a 168-pin printed circuit


    Original     		PDF TS32MLE72V6K TS32MLE72V6K 36pcs 16Mx4 16bits 168-pin 432-word 72-bit

    Untitled

    Abstract: No abstract text available
    Text: PcRam Description TS32MLE72V6Y Dimensions The TS32MLE72V6Y is a 32M bit x 72 Dynamic RAM Side Millimeters Inches high density memory module. The TS32MLE72V6Y A 133.35±0.40 5.250±0.016 consists of 36pcs CMOS 16Mx4 bit DRAMs and 2pcs B 65.67000 2.585000 of 16bits driver mounted on a 168-pin printed circuit


    Original     		PDF TS32MLE72V6Y TS32MLE72V6Y 36pcs 16Mx4 16bits 168-pin 432-word 72-bit

    Untitled

    Abstract: No abstract text available
    Text: PcRam TS16MLE72V6W Transcend Information Inc. Description The TS16MLE72V6W is a 16M bit x 72 Dynamic RAM high density memory module. The TS16MLE72V6W consists of 18pcs CMOS 8Mx8 bit DRAMs and 2pcs 16bits driver mounted on a 168-pin printed circuit board. The TS16MLE72V6W is a Dual In-Line Memory


    Original     		PDF TS16MLE72V6W TS16MLE72V6W 18pcs 16bits 168-pin 216-word 72-bit

    IS42RM16160E

    Abstract: IS42VM16160E-75BLI IS42VM16160E is42vm16160
    Text: IS42/45SM/RM/VM16160E Preliminary Information 4M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		PDF IS42/45SM/RM/VM16160E 16Bits IS42/45SM/RM/VM16160E -40oC 16Mx16 IS42SM16160E-6BLI IS42SM16160E-75BLI 54-ball IS42RM16160E IS42VM16160E-75BLI IS42VM16160E is42vm16160

    IS43LR16640A

    Abstract: IS43LR16640A-5BLI IS43LR16640A-6BLI IS46LR16640A-5BLA1 IS43LR16640A-6BL
    Text: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43/46LR16640A 16Bits IS43/46LR16640A 16-bit -40oC 64Mx16 IS43LR16640A-5BLI IS43LR16640A-6BLI 60-ball IS43LR16640A IS46LR16640A-5BLA1 IS43LR16640A-6BL

    HY5V66EF6P

    Abstract: HY5V66EF6
    Text: 64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O Document Title 4Bank x 1M x 16bits Synchronous DRAM Revision History Revision No. 0.01 History Initial Draft Draft Date Remark Dec. 2004 Preliminary June. 2005 Preliminary 1. Editorial chage 0.80Typ -> 0.45 +/-0.05 page12, Ball Dimension


    Original     		PDF 16bits 80Typ page12, 100MHz 11Preliminary A10/AP 64Mbit 4Mx16bit) HY5V66E HY5V66EF6P HY5V66EF6

    HY57V281620A

    Abstract: HY57V281620ALT-HI HY57V281620ALT-KI HY57V281620ALT-PI HY57V281620ALT-SI HY57V281620AT-HI HY57V281620AT-KI HY57V281620AT-PI HY57V281620AT-SI
    Text: HY57V281620A 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620A is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range . HY57V281620A is organized as 4banks of 2,097,152x16


    Original     		PDF HY57V281620A 16bits HY57V281620A 728bit 152x16 400mil 54pin HY57V281620ALT-HI HY57V281620ALT-KI HY57V281620ALT-PI HY57V281620ALT-SI HY57V281620AT-HI HY57V281620AT-KI HY57V281620AT-PI HY57V281620AT-SI

    TC58DAM72A1FT00

    Abstract: TC58DVM72A1FT00 TC58DAM72F1FT00 TC58DVM72F1FT00 TC58DAM72A1X
    Text: TC58DVM72A1FT00/ TC58DVM72F1FT00 TC58DAM72A1FT00/ TC58DAM72F1FT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT 16M u 8 BITS/8M x 16BITS CMOS NAND E2PROM DESCRIPTION The TC58DxM72x1xxxx is a 128-Mbit (138,412,032) bit NAND Electrically Erasable and Programmable


    Original     		PDF TC58DVM72A1FT00/ TC58DVM72F1FT00 TC58DAM72A1FT00/ TC58DAM72F1FT00 128-MBIT 16BITS) TC58DxM72x1xxxx bytes/264 528-byte/264-words TC58DAM72A1FT00 TC58DVM72A1FT00 TC58DAM72F1FT00 TC58DVM72F1FT00 TC58DAM72A1X

    IS42SM16800F-75BLI

    Abstract: IS42SM16800F
    Text: IS42SM16800F Preliminary Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM16800F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are


    Original     		PDF IS42SM16800F 16Bits IS42SM16800F -40oC 8Mx16 IS42SM16800F-75BLI 54-ball IS42SM16800F-75BLI

    HY57W2A1620HCT

    Abstract: No abstract text available
    Text: HY5W2A6C L/S F-F / HY57W2A1620HC(L/S)T-F HY5W26CF-F / HY57W281620HCT-F 4Banks x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date 0.3 1. Datasheet separation (Normal & Low Power) 2. Page2 ~ Page23 : Part Number Change HY5W26CF -> HY5W2A6CF


    Original     		PDF HY57W2A1620HC HY5W26CF-F HY57W281620HCT-F 16bits Page23 HY5W26CF HY57W281620HCT HY57W2A1620HCT Page18 Page24 HY57W2A1620HCT

    Untitled

    Abstract: No abstract text available
    Text: N128D1618LPAW Advance Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These N128D1618LPAW are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


    Original     		PDF N128D1618LPAW 16Bits N128D1618LPAW

    Untitled

    Abstract: No abstract text available
    Text: HY57V281620HC L/S T 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V281620HC(L/S)T is organized as 4banks of 2,097,152x16


    Original     		PDF HY57V281620HC 16bits 728bit 152x16 400mil 54pin

    HY57Y281620HC

    Abstract: HY57Y281620HCLT-H
    Text: HY57Y281620HC L T 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57Y281620HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57Y281620HC(L)T is organized as 4banks of 2,097,152x16


    Original     		PDF HY57Y281620HC 16bits 728bit 152x16 400mil 54pin HY57Y281620HCLT-H

    AK4516A

    Abstract: sound level meter VSOP 28 441K
    Text: DIGITAL AUDIO PRODUCTS DIGITAL AUDIO and MULTIMEDIA SOUND CODECs AK4563A 28-pin VSOP 5.6 x 9.8 × 1.2 mm Low Power 16-Bit 4ch ADC & 2ch DAC with ALC ( 1 ) Resolution: 16bits ( 2 ) Recording Functions • 4ch Analog Input PGA (Programmable Gain Amplifier)


    Original     		PDF AK4563A 28-pin 16-Bit 16bits 48kHz) AK4516A 16bit sound level meter VSOP 28 441K

    HY57V281620HCT-HI

    Abstract: HY57V281620HCT-6I HY57V281620HCT-7I HY57V281620HCT-8I HY57V281620HCT-KI HY57V281620HCT-PI HY57V281620HCT-SI
    Text: HY57V281620HC L/S T-I Series 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the Mobile applications which require low power consumption and extended temperature range. HY57V281620HC(L/S)T is organized as 4banks of 2,097,152x16


    Original     		PDF HY57V281620HC 16bits 728bit 152x16 400mil 54pin HY57V281620HCT-HI HY57V281620HCT-6I HY57V281620HCT-7I HY57V281620HCT-8I HY57V281620HCT-KI HY57V281620HCT-PI HY57V281620HCT-SI

    TC58DVM82A1FT00

    Abstract: TC58DAM82A1FT00 TC58DAM82F1FT00 TC58DVM82F1FT00
    Text: TC58DVM82A1FT00/ TC58DVM82F1FT00 TC58DAM82A1FT00/ TC58DAM82F1FT00 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT 32M u 8 BITS/16M x 16BITS CMOS NAND E2PROM DESCRIPTION The TC58DxM82x1xxxx is a 256-Mbit (276,824,064) bit NAND Electrically Erasable and Programmable


    Original     		PDF TC58DVM82A1FT00/ TC58DVM82F1FT00 TC58DAM82A1FT00/ TC58DAM82F1FT00 256-MBIT BITS/16M 16BITS) TC58DxM82x1xxxx bytes/264 TC58DVM82A1FT00 TC58DAM82A1FT00 TC58DAM82F1FT00 TC58DVM82F1FT00

    46LR16640A

    Abstract: Mobile DDR SDRAM
    Text: IS43/46LR16640A Advanced Information 16M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16640A is 1,073,741,824 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 16,777,216 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43/46LR16640A 16Bits IS43/46LR16640A 16-bit IS43LR16640A-5BL IS43LR16640A-6BL 60-ball -40oC 64Mx16 46LR16640A Mobile DDR SDRAM

    46LR16320C

    Abstract: Mobile DDR SDRAM
    Text: IS43/46LR16320C Preliminary Information 8M x 16Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR16320C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 8,388,608 words x 16 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted


    Original     		PDF IS43/46LR16320C 16Bits IS43/46LR16320C 16-bit -40oC 32Mx16 IS43LR16320C-5BLI IS43LR16320C-6BLI 60-ball 46LR16320C Mobile DDR SDRAM

    Untitled

    Abstract: No abstract text available
    Text: N128D1633LPAG2 Advance Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These N128D1633LPAG2 are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


    Original     		PDF N128D1633LPAG2 16Bits N128D1633LPAG2

    Untitled

    Abstract: No abstract text available
    Text: IS42RM16800F Advanced Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42RM16800F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are


    Original     		PDF IS42RM16800F 16Bits IS42RM16800F 54Ball -25oC 8Mx16 IS42RM16800F-6BLE IS42RM16800F-75BLE

    Untitled

    Abstract: No abstract text available
    Text: IS42VM16800F Advanced Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42VM16800F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are


    Original     		PDF IS42VM16800F 16Bits IS42VM16800F 54Ball -25oC 8Mx16 IS42VM16800F-75BLE IS42VM16800F-10BLE

    Untitled

    Abstract: No abstract text available
    Text: SH67L17 24K 4-bit Micro-controller with LCD Driver Features SH6610D-based single-chip 4-bit micro-controller with LCD driver ROM: 24K X 16bits RAM: 4136 X 4 bits - 43 System Control Register - 4093 Data memory - 180 LCD RAM Operation Voltage: 1.2V - 1.7V Typical 1.5V


    Original     		PDF SH67L17 SH6610D-based 16bits 768kHz 131kHz 500kHz Opera-440 SEG54 SEG24 SEG55

    HY5S5A6

    Abstract: No abstract text available
    Text: Preliminary HY5S5A6D L/S F(P)-xE 4Banks x 4M x 16bits Synchronous DRAM DESCRIPTION The Hynix Low Power SDRAM is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld PCs.


    Original     		PDF 16bits 456bit 304x16. 0mmx13 40BSC HY5S5A6

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Rev. 0.0 ,„ c . „ LG Semicon Co.,Ltd. Description The GMM2735233CTG is a 4M x 72bits Synchronous Dynamic RAM MODULE w hich is assembled 5 pieces o f 4M x 16bits Synchronous DRAMs in 54 pin TSOP I! package and one 2048 bit EEPROM in 8pin TSSOP


    OCR Scan     		PDF GMM2735233CTG 72bits 16bits 2735233CTG 2735233CTG GMM2735233CTG x64bit