Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    M13S2561616A Search Results

    SF Impression Pixel

    M13S2561616A Price and Stock

    Elite Semiconductor Memory Technology Inc M13S2561616A-5T

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics M13S2561616A-5T 540
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components M13S2561616A-5T 432
    • 1 $7.413
    • 10 $7.413
    • 100 $4.5714
    • 1000 $4.0772
    • 10000 $4.0772
    		Buy Now

    M13S2561616A Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    M13S2561616A Elite Semiconductor Memory Technology 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Original PDF
    M13S2561616A-4TG Elite Semiconductor Memory Technology 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Original PDF
    M13S2561616A-5TG Elite Semiconductor Memory Technology 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Original PDF
    M13S2561616A-6TG Elite Semiconductor Memory Technology 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Original PDF

    M13S2561616A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: ESMT M13S2561616A Revision History Revision 0.1 28 Apr. 2006 - Original Revision 1.0 (07 Jun. 2006) - Delete Preliminary at ever page - Revise typing error of page1 Revision 1.1 (09 May. 2007) - Modify PD, DC specifications and MRS Revision 1.2 (12 Jun. 2007)


    Original     		PDF 66-Lead M13S2561616A M13S25616

    Untitled

    Abstract: No abstract text available
    Text: ESM T M13S2561616A 2K DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition


    Original     		PDF M13S2561616A

    Untitled

    Abstract: No abstract text available
    Text: ESM T M13S2561616A 2A Automotive Grade DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK ) DLL aligns DQ and DQS transition with CLK transition


    Original     		PDF M13S2561616A

    esmt m13s2561616a

    Abstract: M13S2561616A -5T M13S2561616A
    Text: ESMT M13S2561616A Operation Temperature Condition -40~85°C Revision History Revision1.0 19 Oct. 2007 - Original Revision1.1 (06 Dec. 2007) - Add BGA package Elite Semiconductor Memory Technology Inc. Publication Date : Dec. 2007 Revision : 1.1 1/49 ESMT


    Original     		PDF M13S2561616A esmt m13s2561616a M13S2561616A -5T M13S2561616A

    Untitled

    Abstract: No abstract text available
    Text: ESMT Prelinminary M13S2561616A Revision History Revision 0.1 28 Apr. 2006 - Original Elite Semiconductor Memory Technology Inc. Publication Date : Apr. 2006 Revision : 0.1 1/48 ESMT Prelinminary DDR SDRAM M13S2561616A 2M x 16 Bit x 4 Banks Double Data Rate SDRAM


    Original     		PDF M13S2561616A

    M13S2561616A -5T

    Abstract: M13S2561616A esmt m13s2561616a
    Text: ESMT M13S2561616A Revision History Revision 0.1 28 Apr. 2006 - Original Revision 1.0 (07 Jun. 2006) - Delete Preliminary at ever page - Revise typing error of page1 Revision 1.1 (09 May. 2007) - Modify PD, DC specifications and MRS Revision 1.2 (12 Jun. 2007)


    Original     		PDF M13S2561616A M13S2561616A -5T M13S2561616A esmt m13s2561616a

    Untitled

    Abstract: No abstract text available
    Text: ESM T M13S2561616A 2K Operation Temperature Condition -40ｔC~85ｔC DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK )


    Original     		PDF M13S2561616A

    Untitled

    Abstract: No abstract text available
    Text: ESMT M13S2561616A Revision History Revision 0.1 28 Apr. 2006 - Original Revision 1.0 (07 Jun. 2006) - Delete Preliminary at ever page - Revise typing error of page1 Revision 1.1 (09 May. 2007) - Modify PD, DC specifications and MRS Revision 1.2 (12 Jun. 2007)


    Original     		PDF M13S2561616A M13S2561616A

    esmt m13s2561616a

    Abstract: M13S2561616A
    Text: ESMT M13S2561616A DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK )


    Original     		PDF M13S2561616A esmt m13s2561616a M13S2561616A

    Untitled

    Abstract: No abstract text available
    Text: ESMT M13S2561616A 2K DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition


    Original     		PDF M13S2561616A

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary M13S2561616A (2S) DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features  Double-data-rate architecture, two data transfers per clock cycle  Bi-directional data strobe (DQS)  Differential clock inputs (CLK and CLK ) 


    Original     		PDF M13S2561616A

    DDR SDRAM

    Abstract: No abstract text available
    Text: ESMT M13S2561616A 2A Operation Temperature Condition -40°C~85°C DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK )


    Original     		PDF M13S2561616A DDR SDRAM

    X16V

    Abstract: No abstract text available
    Text: ESMT M13S2561616A Revision History Revision 0.1 28 Apr. 2006 - Original Revision 1.0 (07 Jun. 2006) - Delete Preliminary at ever page - Revise typing error of page1 Revision 1.1 (09 May. 2007) - Modify PD, DC specifications and MRS Revision 1.2 (12 Jun. 2007)


    Original     		PDF 66-Lead M13S2561616A M13S2561616A X16V

    Untitled

    Abstract: No abstract text available
    Text: ESM T M13S2561616A 2A Operation Temperature Condition -40°C~85°C DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features Double-data-rate architecture, two data transfers per clock cycle Bi-directional data strobe (DQS) Differential clock inputs (CLK and CLK )


    Original     		PDF M13S2561616A

    DDR SDRAM

    Abstract: esmt m13s2561616a
    Text: ESMT M13S2561616A 2A Automotive Grade DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition


    Original     		PDF M13S2561616A DDR SDRAM esmt m13s2561616a

    Untitled

    Abstract: No abstract text available
    Text: ESMT Preliminary M13S2561616A (2S) DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features  Double-data-rate architecture, two data transfers per clock cycle  Bi-directional data strobe (DQS)  Differential clock inputs (CLK and CLK ) 


    Original     		PDF M13S2561616A

    Untitled

    Abstract: No abstract text available
    Text: ESMT M13S2561616A Revision History Revision 0.1 28 Apr. 2006 - Original Revision 1.0 (07 Jun. 2006) - Delete Preliminary at ever page - Revise typing error of page1 (2Mx16 Î 4Mx16) Revision 1.1 (09 May. 2007) - Modify PD, DC specifications and MRS Elite Semiconductor Memory Technology Inc.


    Original     		PDF M13S2561616A 2Mx16 4Mx16)

    Untitled

    Abstract: No abstract text available
    Text: ESMT M13S2561616A 2K Operation Temperature Condition -40°C~85°C DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK )


    Original     		PDF M13S2561616A

    M13S2561616A -5T

    Abstract: CKE 2009 M13S2561616A-4TG M13S2561616A esmt m13s2561616a
    Text: ESMT M13S2561616A DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z JEDEC Standard z Internal pipelined double-data-rate architecture, two data access per clock cycle z Bi-directional data strobe DQS z On-chip DLL z Differential clock inputs (CLK and CLK )


    Original     		PDF M13S2561616A M13S2561616A -5T CKE 2009 M13S2561616A-4TG M13S2561616A esmt m13s2561616a

    Untitled

    Abstract: No abstract text available
    Text: ESMT M13S2561616A 2A DDR SDRAM 4M x 16 Bit x 4 Banks Double Data Rate SDRAM Features z Double-data-rate architecture, two data transfers per clock cycle z Bi-directional data strobe (DQS) z Differential clock inputs (CLK and CLK ) z DLL aligns DQ and DQS transition with CLK transition


    Original     		PDF M13S2561616A

    Untitled

    Abstract: No abstract text available
    Text: ESMT M13S2561616A Revision History Revision 0.1 28 Apr. 2006 - Original Revision 1.0 (07 Jun. 2006) - Delete Preliminary at ever page - Revise typing error of page1 (2Mx16 4Mx16) Elite Semiconductor Memory Technology Inc. Publication Date : Jun. 2006 Revision : 1.0


    Original     		PDF M13S2561616A 2Mx16 4Mx16)

    M13S2561616A-5TG

    Abstract: 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII
    Text: Product Selection Guide of ESMT DRAM Density 4Mb Updated Date : 11/06/2006 Organization Description 256Kb*16 EDO DRAM 5V EDO DRAM 5V EDO DRAM 3.3V EDO DRAM 3.3V Refresh 512 512 512 512 Speed 25ns 35ns 35ns 35ns Package Part Number Pb-free Sample MP Now Now


    Original     		PDF 256Kb 40/44L-TSOPII M11B416256A-25JP M11B416256A-35TG M11L416256SA-35JP M11L416256SA-35TG 40L-SOJ 44-40L-TSOPII 128Mb M13S2561616A-5TG 90-FBGA M12L64164A-7T M13S2561616A -5T M11B416256A-25JP diode 6BG 90FBGA M12L128168A-6TG M12L16161A TSOPII