NX8341UH
Abstract: 10 gb laser diode nec 2702 NX8341 NX8341UN PX10160E
Text: PRELIMINARY DATA SHEET LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical
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NX8341
NX8341UH
NX8341UN
NX8341UH
10 gb laser diode
nec 2702
NX8341UN
PX10160E
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NX6406
Abstract: NX6406GH NX6406GK PX10160E
Text: PRELIMINARY DATA SHEET LASER DIODE NX6406 Series 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR FTTH PON APPLICATION DESCRIPTION The NX6406 Series is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD.
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NX6406
NX6406GH
NX6406GK
PX10160E
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A1276
Abstract: NX5315 NX5315EH NX5315EK PX10160E laser gpon
Text: PRELIMINARY DATA SHEET LASER DIODE NX5315 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These
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NX5315
A1276
NX5315EH
NX5315EK
PX10160E
laser gpon
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NX5313EH
Abstract: NX5313 NX5313EK PX10160E A1276 laser gpon
Text: PRELIMINARY DATA SHEET LASER DIODE NX5313 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5313 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These
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NX5313
NX5313EH
NX5313EK
PX10160E
A1276
laser gpon
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NX5501
Abstract: NX5501EH NX5501EK PX10160E
Text: DATA SHEET LASER DIODE NX5501 Series 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5501 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. APPLICATION • FTTH (Fiber To The Home)
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NX5501
NX5501EH
NX5501EK
PX10160E
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NX6506
Abstract: NX6506GH NX6506GK PX10160E
Text: PRELIMINARY DATA SHEET LASER DIODE NX6506 Series 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 622 Mb/s, 1.25 Gb/s DESCRIPTION The NX6506 Series is a 1 550 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD.
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NX6506
NX6506GH
NX6506GK
PX10160E
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NX7461LE-CC
Abstract: PX10160E
Text: PRELIMINARY DATA SHEET LASER DIODE NX7461LE-CC 1 480 nm EDFA APPLICATION InGaAsP MQW-FP LASER DIODE MODULE DESCRIPTION The NX7461LE-CC is a 1 480 nm pumping laser diode module with optical isolator for an EDFA Er Doped optical Fiber Amplifier that can expand the
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NX7461LE-CC
NX7461LE-CC
14-pin
PX10160E
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nec MONITOR 28 PIN CONNECTOR
Abstract: NX7462LE-CC PX10160E invisible
Text: PRELIMINARY DATA SHEET LASER DIODE NX7462LE-CC 1 480 nm EDFA APPLICATION InGaAsP MQW-FP LASER DIODE MODULE DESCRIPTION The NX7462LE-CC is a 1 480 nm pumping laser diode module with optical isolator for an EDFA Er Doped optical Fiber Amplifier that can expand the
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NX7462LE-CC
NX7462LE-CC
14-pin
nec MONITOR 28 PIN CONNECTOR
PX10160E
invisible
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NX5310
Abstract: NX5310EH NX5310EK PX10160E
Text: PRELIMINARY DATA SHEET LASER DIODE NX5310 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5310 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These
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NX5310
NX5310EH
NX5310EK
PX10160E
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NEC JAPAN
Abstract: NX5312 NX5312EH NX5312EK PX10160E
Text: PRELIMINARY DATA SHEET LASER DIODE NX5312 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5312 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These
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NX5312
NEC JAPAN
NX5312EH
NX5312EK
PX10160E
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET LASER DIODE NX8312UD 1 310 nm FOR SHORT HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA DESCRIPTION The NX8312UD is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package
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NX8312UD
NX8312UD
STM-16
OC-48
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NX5311
Abstract: NX5311GH NX5311GK PX10160E
Text: PRELIMINARY DATA SHEET LASER DIODE NX5311 Series 1 310 nm FOR 1.25 Gb/s, FTTH PON InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5311 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.
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NX5311
NX5311GH
NX5311GK
PX10160E
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ES01F
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. ES01F 1. Scope The present specifications shall apply to Sanken silicon diode, ES01F. 2. Outline Type Silicon Rectifier Diode Mesa type Structure Resin Molded Applications Pulse Rectification, etc Flammability: UL94V-0 (Equivalent)
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ES01F
ES01F.
UL94V-0
10msec.
ES01F
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sms05
Abstract: GPZ1275 xbox 360 lcd gameboy xbox 360 power supply FC177 SMDA08 VSB10P15LCI VS10P05 MSMF15C
Text: TABLE OF CONTENTS Product Index – Alphanumeric . 2 TVS Diode Arrays. 3
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USB004,
USB208
SFC05-4
U040xFC
ET724,
sms05
GPZ1275
xbox 360
lcd gameboy
xbox 360 power supply
FC177
SMDA08
VSB10P15LCI
VS10P05
MSMF15C
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77C7
Abstract: 887c 1r12r
Text: This Document can not be used without Samsung's authorization. 10. Main System Part List CODE 3920501 0401-000191 DESCRIPTION REFERENCE EA jack-usb-4p-mnt4, JACK-USB;-,-,-,-,- J505 J2501 J2502 3 diode, DIODE-SWITCHING;MMBD4148,75V,200MA,SOT-23,TP D4 D16 D22 D23
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R222 smd
Abstract: RA516-1 2007-000162 RA523-1 C627 SOT-23 smd R540 63MIL d516 gp SMD R618 SMD C548
Text: - This Document can not be used without Samsung's authorization - 10 Schematic Material List 10-1 Mainboard Parts List CODE LOCATION CATALOG DESCRIPTION 0401-000191 D16 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP 0401-000191 D14 DIODE-SWITCHING MMBD4148,75V,200MA,SOT-23,TP
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CA-001175
BA41-00418A
BA62-00194A
BA62-00306A
BA68-40005L
120OHM
143OHM/132MHZ
213OHM/390MHZ,
R222 smd
RA516-1
2007-000162
RA523-1
C627 SOT-23
smd R540
63MIL
d516 gp
SMD R618
SMD C548
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Untitled
Abstract: No abstract text available
Text: PHD13003C NPN power transistor with integrated diode Rev. 01 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 plastic package
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PHD13003C
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SC-43A
Abstract: cfl Self-Oscillating
Text: PHD13003C NPN power transistor with integrated diode Rev. 01 — 29 July 2010 Product data sheet 1. Product profile 1.1 General description High voltage, high speed, planar passivated NPN power switching transistor with integrated anti-parallel emitter-collector diode in a SOT54 plastic package
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PHD13003C
SC-43A
cfl Self-Oscillating
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samsung r540
Abstract: Samsung R590 R721-R725 C732 SMD 10000NF R616 R617 R714-R715 samsung r580 b16 r649 Smd q535
Text: - This Document can not be used without Samsung’s authorization - 10. Part List 1 System Board Main System LOCATION SEC CODE NAME SPECIFICATION QUANTITY 0401-000191 DIODE-SWITCHING MMBD4148,75V,200mA,SOT-23,TP 6 D512 0402-001024 DIODE-RECTIFIER MBR0540,40V,0.5A,SOD-123,TP
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ZD500
QF500
RHU002N06
200MA
OT-323
F820P
33x33mm
500MHz
K4J52324QC
512Mbit
samsung r540
Samsung R590
R721-R725
C732 SMD
10000NF
R616 R617
R714-R715
samsung r580
b16 r649
Smd q535
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FMB-G19L
Abstract: FMB-G19 FMBG19
Text: SANKEN ELECTRIC CO., LTD. FMB-G19L 1. Scope The present specifications shall apply to an FMB-G19L. 2. Outline 3. Type Silicon Schottky Barrier Diode Structure Resin Molded Applications High Frequency Rectification Flammability UL94V-0 Equivalent 040618 1／5
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FMB-G19L
FMB-G19L.
UL94V-0
FMBG19
FMB-G19L
FMB-G19
FMBG19
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. RA13 1. Scope The present specifications shall apply to an RA13. 2. Outline Type Silicon Schottky Barrier Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 040622 1／5 61426-01
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UL94V-0
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. RN1Z 1. Scope The present specifications shall apply to an RN1Z. 2. Outline Type Silicon Diode Structure Resin Molded Applications High Frequency Rectification 3. Flammability UL94V-0 Equivalent 040608 1／5 61426-01 SANKEN ELECTRIC CO., LTD.
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UL94V-0
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. RU2 1. Scope The present specifications shall apply to a RU2. 2. Outline Type Silicon Diode Structure Resin Molded Applications Flammability:UL94-V0 Equivalent High Frequency Rectification, etc. 3. Absolute maximum ratings No. Item
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UL94-V0
10msec.
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Untitled
Abstract: No abstract text available
Text: SANKEN ELECTRIC CO., LTD. EU2 1. Scope The present specifications shall apply to an EU2. 2. Outline Type Silicon Diode Structure Resin Molded Applications Flammability:UL94-V0 Equivalent High Frequency Rectification, etc. 3. Absolute maximum ratings No. Item
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UL94-V0
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