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    NX5315 Search Results

    NX5315 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NX5315 California Eastern Laboratories NECs 1310 Nm InGaAsP MQW FP Laser Diode In Can Package For Ftth Pon Applications Original PDF
    NX5315EH California Eastern Laboratories 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE Original PDF
    NX5315EH NEC Laser Diode, InGaAsP MQW-FP Laser Diode Original PDF
    NX5315EH-A NEC LASER DIODE MODULE 1352NM 13MW Original PDF
    NX5315EH-AZ California Eastern Laboratories 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE Original PDF
    NX5315EH-AZ California Eastern Laboratories NECs 1310 Nm InGaAsP MQW FP Laser Diode In Can Package For Ftth Pon Applications Original PDF
    NX5315EK NEC Laser Diode, InGaAsP MQW-FP Laser Diode Original PDF
    NX5315EK-AZ California Eastern Laboratories NECs 1310 Nm InGaAsP MQW FP Laser Diode In Can Package For Ftth Pon Applications Original PDF

    NX5315 Datasheets Context Search

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    NX5315EH

    Abstract: NX5315EH-AZ
    Text: LASER DIODE NX5315EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s.


    Original     		PDF NX5315EH NX5315EH PL10531EJ03V0DS NX5315EH-AZ

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET LASER DIODE NX5315EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s.


    Original     		PDF NX5315EH NX5315EH

    A1276

    Abstract: NX5315 NX5315EH NX5315EK PX10160E laser gpon
    Text: PRELIMINARY DATA SHEET LASER DIODE NX5315 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These


    Original     		PDF NX5315 A1276 NX5315EH NX5315EK PX10160E laser gpon

    NX5315

    Abstract: NX5315EH NX5315EH-AZ NX5315EK NX5315EK-AZ
    Text: PRELIMINARY DATA SHEET NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5315 SERIES FOR FTTH PON APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Po = 13.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY: ηd =0.5 W/A • WIDE OPERATING TEMPERATURE RANGE:


    Original     		PDF NX5315 NX5315EH NX5315EH-AZ NX5315EK NX5315EK-AZ

    NX5315EH

    Abstract: PX10160E
    Text: PRELIMINARY DATA SHEET LASER DIODE NX5315EH 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5315EH is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is designed for application up to 1.25 Gb/s.


    Original     		PDF NX5315EH NX5315EH PX10160E

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5315 SERIES FOR FTTH PON APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Po = 13.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY: ηd =0.5 W/A • WIDE OPERATING TEMPERATURE RANGE:


    Original     		PDF NX5315

    gpon laser

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF