NX5310 Search Results

NX5310 Datasheets (10)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
NX5310		California Eastern Laboratories	1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE		Original	PDF
NX5310		California Eastern Laboratories	NECs 1310 Nm InGaAsP MQW FP Laser Diode In Can Package For 155 Mb/s 622 Mb/s 1.25 Gb/s and Ftth Applications		Original	PDF
NX5310EH		NEC	Laser Diode, InGaAsP MQW-FP Laser Diode		Original	PDF
NX5310EH-A		NEC	LASER DIODE MODULE 1330NM 0.01MW		Original	PDF
NX5310EH-AZ		California Eastern Laboratories	1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE		Original	PDF
NX5310EH-AZ		California Eastern Laboratories	NECs 1310 Nm InGaAsP MQW FP Laser Diode In Can Package For 155 Mb/s 622 Mb/s 1.25 Gb/s and Ftth Applications		Original	PDF
NX5310EK		NEC	Laser Diode, InGaAsP MQW-FP Laser Diode		Original	PDF
NX5310EK-A		NEC	LASER DIODE MODULE 1330NM 0.01MW		Original	PDF
NX5310EK-AZ		California Eastern Laboratories	1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE		Original	PDF
NX5310EK-AZ		California Eastern Laboratories	NECs 1310 Nm InGaAsP MQW FP Laser Diode In Can Package For 155 Mb/s 622 Mb/s 1.25 Gb/s and Ftth Applications		Original	PDF

NX5310 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NX5310 Abstract: NX5310EH NX5310EK PX10160E Text: PRELIMINARY DATA SHEET LASER DIODE NX5310 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5310 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These	Original	PDF	NX5310 NX5310EH NX5310EK PX10160E
Untitled Abstract: No abstract text available Text: DATA SHEET LASER DIODE NX5310 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5310 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These	Original	PDF	NX5310
NX5310 Abstract: NX5310EH NX5310EH-AZ NX5310EK NX5310EK-AZ Text: LASER DIODE NX5310 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5310 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.	Original	PDF	NX5310 PL10526anty NX5310EH NX5310EH-AZ NX5310EK NX5310EK-AZ
NX5310 Abstract: NX5310EH NX5310EH-AZ NX5310EK NX5310EK-AZ Text: PRELIMINARY DATA SHEET NECʼs 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5310 SERIES FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s AND FTTH APPLICATIONS FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: Po = 5.0 mW NECʼs NX5310 Series is a 1310 nm Multiple Quantum Well	Original	PDF	NX5310 NX5310EH NX5310EH-AZ NX5310EK NX5310EK-AZ
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5310 SERIES FOR 155 Mb/s, 622 Mb/s, 1.25 Gb/s AND FTTH APPLICATIONS FEATURES DESCRIPTION • OPTICAL OUTPUT POWER: Po = 5.0 mW NEC’s NX5310 Series is a 1310 nm Multiple Quantum Well	Original	PDF	NX5310
Untitled Abstract: No abstract text available Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
2SK2500 Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861 Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose	Original	PDF