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    NX5313 Search Results

    NX5313 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NX5313 California Eastern Laboratories 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS Original PDF
    NX5313EH NEC Laser Diode, InGaAsP MQW-FP Laser Diode Original PDF
    NX5313EH-A NEC LASER DIODE MODULE 1352NM 13MW Original PDF
    NX5313EK NEC Laser Diode, InGaAsP MQW-FP Laser Diode Original PDF

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    NX5313EH

    Abstract: NX5313 NX5313EK
    Text: PRELIMINARY DATA SHEET NEC’s 1310 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE NX5313 SERIES FOR FTTH PON APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: Po = 13.0 mW • LOW THRESHOLD CURRENT : Ith = 6 mA • DIFFERENTIAL EFFICIENCY: ηd =0.5 W/A • WIDE OPERATING TEMPERATURE RANGE:


    Original     		PDF NX5313 NX5313EH NX5313EK

    NX5313EH

    Abstract: NX5313 NX5313EK PX10160E A1276 laser gpon
    Text: PRELIMINARY DATA SHEET LASER DIODE NX5313 Series 1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5313 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These


    Original     		PDF NX5313 NX5313EH NX5313EK PX10160E A1276 laser gpon

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF