NX5501EH
Abstract: No abstract text available
Text: NEC'S 1550 nm InGaAsP MQW FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION NX5501EH FEATURES DESCRIPTION • OPTICAL OUTPUT POWER PO = 5.0 mW NEC's NX5501EH is a 1550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser Diode with InGaAsP monitor
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NX5306
Abstract: NX5307 NX5501EH NX6306 NX6307 NX6504 STM-16
Text: PRELIMINARY DATA SHEET LASER DIODE NX5501EH 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5501EH is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. This device is ideal for fiber to the home application.
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NX5306
NX5307
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STM-16
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2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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NX5501
Abstract: No abstract text available
Text: NEC's 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION NX5501 Series FEATURES • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: Ith = 8 mA • DIFFERENTIAL EFFICENCY: ηD = 0.3 W/A • WIDE OPERATING TEMPERATURE RANGE TC = -40 to +85°C
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NX5501
Abstract: NX5501EH NX5501EK PX10160E
Text: DATA SHEET LASER DIODE NX5501 Series 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5501 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. APPLICATION • FTTH (Fiber To The Home)
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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NX5501
Abstract: NX5501EH NX5501EH-AZ NX5501EK NX5501EK-AZ
Text: NEC's 1550 nm InGaAsP MQW-FP LASER DIODE IN CAN PACKAGE FOR FTTH APPLICATION NX5501 Series FEATURES • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT: Ith = 8 mA • DIFFERENTIAL EFFICENCY: ηD = 0.3 W/A • WIDE OPERATING TEMPERATURE RANGE TC = -40 to +85°C
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Untitled
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX5307 Series 1 310 nm FOR INTRA-OFFICE 2.5 Gb/s InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5307 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Synchronous Digital Hierarchy (SDH) system, intra-office
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STM 125
Abstract: No abstract text available
Text: DATA SHEET LASER DIODE NX5306 Series 1 310 nm FOR 156 Mb/s, 622 Mb/s, 1.25 Gb/s, InGaAsP MQW-FP LASER DIODE DESCRIPTION The NX5306 Series is a 1 310 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diodes with InGaAs monitor PIN-PD. These devices are ideal for Gigabit Ethernet and Synchronous Digital Hierarchy
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