NX6406GH Search Results

NX6406GH Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
NX6406GH		NEC	Laser Diode, InGaAsP MQW-DFB Laser Diode		Original	PDF
NX6406GH-AZ		California Eastern Laboratories	NECs 1490 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE FOR FTTH PON APPLICATIONS		Original	PDF

NX6406GH Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: NEC’s 1490 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE NX6406 SERIES FOR FTTH PON APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT : ITH = 10 mA • DIFFERENTIAL EFFICIENCY: ηd = 0.3 W/A • WIDE OPERATING TEMPERATURE RANGE:	Original	PDF	NX6406
laser diode nec Abstract: NX6406 NX6406GH NX6406GK PX10160E Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
NX6406 Abstract: NX6406GH NX6406GH-AZ NX6406GK NX6406GK-AZ Text: NECʼs 1490 nm InGaAsP MQW-DFB LASER DIODE IN CAN PACKAGE NX6406 SERIES FOR FTTH PON APPLICATIONS FEATURES • OPTICAL OUTPUT POWER: PO = 5.0 mW • LOW THRESHOLD CURRENT : ITH = 10 mA • DIFFERENTIAL EFFICIENCY: ηd = 0.3 W/A • WIDE OPERATING TEMPERATURE RANGE:	Original	PDF	NX6406 NX6406GH NX6406GH-AZ NX6406GK NX6406GK-AZ
NX6406 Abstract: NX6406GH NX6406GK PX10160E Text: PRELIMINARY DATA SHEET LASER DIODE NX6406 Series 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR FTTH PON APPLICATION DESCRIPTION The NX6406 Series is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PINPD.	Original	PDF	NX6406 NX6406GH NX6406GK PX10160E