Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DE275 Search Results

    SF Impression Pixel

    DE275 Price and Stock

    Select Manufacturer

    IXYS Corporation DE275-501N16A

    Rf Mosfet, N Channel, 500V, De-275; Drain Source Voltage Vds:500V; Continuous Drain Current Id:16A; Power Dissipation:590W; Operating Frequency Min:-; Operating Frequency Max:100Mhz; No. Of Pins:6Pins; Operating Temperature Max:175°Crohs Compliant: Yes |Ixys Rf DE275-501N16A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark DE275-501N16A Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    IXYS Corporation DE275X2-102N06A

    Mosfet, N Channel, Rf, 16A, 1Kv, 1.18Kw; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:16A; Power Dissipation:1.18Kw; Operating Frequency Min:-; Operating Frequency Max:100Mhz; No. Of Pins:8Pins; Channel Type:N Channel Rohs Compliant: Yes |Ixys Rf DE275X2-102N06A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark DE275X2-102N06A Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Siemens 6SL32230DE275AG1

    SINAMICS PM230-IP55-FSB-A-400V 7.5KW ; 6SL32230DE275AG1 | Siemens 6SL32230DE275AG1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 6SL32230DE275AG1 Bulk 2 Weeks 1
    • 1 $2067.8
    • 10 $2067.8
    • 100 $2067.8
    • 1000 $2067.8
    • 10000 $2067.8
    		Get Quote

    Siemens 6SL32230DE275BG1

    SINAMICS PM230-IP55-FSB-B-400V 7.5KW ; 6SL32230DE275BG1 | Siemens 6SL32230DE275BG1
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS 6SL32230DE275BG1 Bulk 2 Weeks 1
    • 1 $2308.28
    • 10 $2308.28
    • 100 $2308.28
    • 1000 $2308.28
    • 10000 $2308.28
    		Get Quote

    IXYS Corporation DE275-101N30A

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics DE275-101N30A 30
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Find more DE275 price and stock on Findchips.com

    DE275 Datasheets (29)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    DE-275 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF
    DE275 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    DE-275-101N30 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-275-101N30-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE275-101N30-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-275-101P12-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-275-102N05 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-275-102N05-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE275-102N05-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE275-102N06A Directed Energy RF Power MOSFET Original PDF
    DE275-102N06A IXYS TRANS MOSFET N-CH 1000V 8A 6DE 275 Original PDF
    DE-27510IN40 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-27510IP12 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-275-201N25 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-275-201N25-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE275-201N25A IXYS TRANS MOSFET N-CH 200V 25A 6DE 275 Original PDF
    DE-275-201P11-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-27520IP11 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE-275-501N12-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF
    DE275-501N12-00 Directed Energy DE-SERIES FAST POWER MOSFETS Scan PDF

    DE275 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    DE275X2-102N06A

    Abstract: 102N06 DE275X2 102N06A 400P DE-27
    Text: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-102N06A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in


    Original     		DE275X2-102N06A DE275X2-102N06A 102N06 DE275X2 102N06A 400P DE-27 PDF

    Untitled

    Abstract: No abstract text available
    Text: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.


    Original     		DE275X2-501N16A DE275X2-501N16A PDF

    DE275X2-501N16A

    Abstract: No abstract text available
    Text: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-501N16A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in


    Original     		DE275X2-501N16A DE275X2-501N16A PDF

    13.56mhz c class amp

    Abstract: ferrite core binocular air variable capacitor mp850 25.0 DE275-102N06A
    Text: DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient


    Original     		DE275-102N06A 102N06A 13.56mhz c class amp ferrite core binocular air variable capacitor mp850 25.0 DE275-102N06A PDF

    DE275X2-501N16A

    Abstract: "RF MOSFETs" RF POWER MOSFET 275X2-501N16A DE275X2
    Text: DE275X2-501N16A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-501N16A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.


    Original     		DE275X2-501N16A DE275X2-501N16A "RF MOSFETs" RF POWER MOSFET 275X2-501N16A DE275X2 PDF

    air variable capacitor

    Abstract: 13.56mhz c class amp DE275-102N06A 102N06A GME90901 DE275102N06A 102N06 KW 13.56MHz 102KW 10-DOF
    Text: DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Maximum Ratings VDSS = 1000 V ID25 = 8A RDS on = 1.5 Ω PDC = 590 W Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		DE275-102N06A 102N06A air variable capacitor 13.56mhz c class amp DE275-102N06A GME90901 DE275102N06A 102N06 KW 13.56MHz 102KW 10-DOF PDF

    102N06A

    Abstract: 400P DE275-102N06A 10-DOF 102N06
    Text: Directed Energy, Inc. An DE275-102N06A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		DE275-102N06A 102N06A 400P DE275-102N06A 10-DOF 102N06 PDF

    DE275-102N06A

    Abstract: DE375-102N10A DE375-501N16A
    Text: RF Power MOSFETs VDSS ID25 RDS on max V 500 TC = 25 °C A 16 Ω 0.5 DE375-501N16A 1000 6 2.0 DE275-102N06A 10 1.2 DE375-102N10A Part Number Note: These part types are available from Directed Energy, Inc.


    Original     		DE375-501N16A DE275-102N06A DE375-102N10A DE275-102N06A DE375-102N10A DE375-501N16A PDF

    DE275-102N06A

    Abstract: 900 v 6 amp mosfet 102N06A 400P 10-DOF 102N
    Text: DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient


    Original     		DE275-102N06A 102N06A DE275-102N06A 900 v 6 amp mosfet 400P 10-DOF 102N PDF

    DE275-501N16A

    Abstract: 92-0002 DE275-501N16
    Text: Directed Energy, Inc. An DE275-501N16A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		DE275-501N16A DE275-501N16A 92-0002 DE275-501N16 PDF

    DE275X2-102N06A

    Abstract: mosfet pair DE275X2-102N06A 1000 volt mosfet 50W rf power transistor 100MHz RF POWER MOSFET TRANSISTOR 100MHz 102N06A 400P 10-DOF 275X2-102N06A ssd2
    Text: DE275X2-102N06A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.


    Original     		DE275X2-102N06A DE275X2-102N06A 102N06A mosfet pair DE275X2-102N06A 1000 volt mosfet 50W rf power transistor 100MHz RF POWER MOSFET TRANSISTOR 100MHz 400P 10-DOF 275X2-102N06A ssd2 PDF

    DE275-201N25A

    Abstract: No abstract text available
    Text: DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200


    Original     		DE275-201N25A 201N25A 1100P DE275-201N25A PDF

    DE275-501N16A

    Abstract: 501N16A gsm Handset Circuit Diagram PIN diode SPICE model
    Text: DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500


    Original     		DE275-501N16A DE275-501N16A 501N16A gsm Handset Circuit Diagram PIN diode SPICE model PDF

    DE275-201N25A

    Abstract: No abstract text available
    Text: DE275-201N25A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient


    Original     		DE275-201N25A 201N25A 1100P DE275-201N25A PDF

    Directed Energy

    Abstract: DE275-102N06A
    Text: Directed Energy, Inc. An DE275-102N06A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000


    Original     		DE275-102N06A Directed Energy DE275-102N06A PDF

    DE275-101N30A

    Abstract: DE-275-101N30 de275 PIN diode SPICE model
    Text: DE275-101N30A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient


    Original     		DE275-101N30A 101N09A 1100P DE275-101N30A DE-275-101N30 de275 PIN diode SPICE model PDF

    DE275X2-102N06A

    Abstract: mosfet pair DE275X2-102N06A 1000 volt mosfet "RF MOSFETs" 102N06A 400P 275x2-102n06a rf power mosfet MOSFET 50 amp 1000 volt
    Text: DE275X2-102N06A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in a common source configuration. The device is optimized for push-pull or parallel operation in RF generators and amplifiers at frequencies to >65 MHz.


    Original     		DE275X2-102N06A DE275X2-102N06A 102N06A mosfet pair DE275X2-102N06A 1000 volt mosfet "RF MOSFETs" 400P 275x2-102n06a rf power mosfet MOSFET 50 amp 1000 volt PDF

    vdgr test circuit

    Abstract: MOSFET 2301 oss 200-20 vdr 275 DE-275
    Text: - ^ ' • » n ^ c - r ' T n r n r r n c m c p T î v i m p / . . . Q 7 n f i n n O T r , ÎTliTafl^ ^ s D IR EC TE! ENERGY INC t - i ~ _ » Q0ÜDÜ27 =■ DE-275 SERIES □ DATA ante i DIRECTED ENERGY, IN C -, > ■ ^ DE-275 20IP11


    OCR Scan     		DE-275 20IP11 vdgr test circuit MOSFET 2301 oss 200-20 vdr 275 PDF

    mospower applications handbook

    Abstract: MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics
    Text: DIRECTED ENERGY INC 204^=55 50E D D 0 D 01 13 473 • DIRE DE-SERIES MOSFETS m m M m INTRODUCTION TO THE DE-SERIES E -M SYM M ETRY - E LE C TR IC AL ADVANTAGES THERM AL M E C H A N IC A L ADVANTAGES GATE DR IVE CIRCU ITR Y Directed Energy, Inc. 2301 Research Blvd., Ste. 101


    OCR Scan     		00D0113 and01N 201P11-00* 101N30-00 P12-00* DE-375 -59S-- 102N11-00 501N21-00 mospower applications handbook MOSFET power inverter 600W circuit diagram HEXFET Power MOSFET designer manual Rudy Severns "mospower applications handbook" 02N05 Siliconix Handbook 501n04 MOSFET designer manual Gate Drive Characteristics PDF

    DE-275 101N30

    Abstract: Directed Energy 101N30 DE-275
    Text: PRELIMINARY SPECIFICATIONS DE-275 101N30 30A, 100V, 0.05Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


    Original     		DE-275 101N30 250mA 150oC DE-275 101N30 Directed Energy 101N30 PDF

    102N05

    Abstract: DE-275
    Text: PRELIMINARY SPECIFICATIONS DE-275 102N05 5A, 1000V, 2.6Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


    Original     		DE-275 102N05 150oC 102N05 PDF

    DEIC420

    Abstract: DEIC420 RF MOSFET Gate Driver IC IXDD415SI DEIC420 application 13.56Mhz class e power amplifier power amplifier mosfet up to 50mhz "RF MOSFETs" DE-275 EVIC420 13.56MHZ mosfet
    Text: DEIC420 20 Ampere Low-Side Ultrafast RF MOSFET Driver Features Description • Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes • Latch-Up Protected • High Peak Output Current: 20A Peak • Wide Operating Range: 8V to 30V


    Original     		DEIC420 TheDEIC420 45MHz, DEIC420 DEIC420 RF MOSFET Gate Driver IC IXDD415SI DEIC420 application 13.56Mhz class e power amplifier power amplifier mosfet up to 50mhz "RF MOSFETs" DE-275 EVIC420 13.56MHZ mosfet PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    DE-Series

    Abstract: mosfet High-Speed Switching 100mhz Directed Energy DE-150 DE-275 DE-375
    Text: DIRECTED ENERGY, INC. TECHNICAL NOTE DE-SERIES FAST POWER MOSFET AN INTRODUCTION George J Krausse, Directed Energy, Inc. Abstract The DE-SERIES Fast Power TM MOSFETs are unique high power devices designed as a circuit element from the ground up for high speed, high


    Original     		PDF