102N Search Results

102N Result Highlights (5)

Part	Manufacturer	Description
REG102NA-2.85/3K	Texas Instruments	250mA, Low-Noise, Low-Dropout Linear Voltage Regulator 5-SOT-23
REG102NA-2.85/250	Texas Instruments	250mA, Low-Noise, Low-Dropout Linear Voltage Regulator 5-SOT-23
REG102NA-A/3K	Texas Instruments	250mA, Low-Noise, Low-Dropout Linear Voltage Regulator 5-SOT-23
REG102NA-3/250	Texas Instruments	250mA, Low-Noise, Low-Dropout Linear Voltage Regulator 5-SOT-23 -40 to 85
REG102NA-2.5/250G4	Texas Instruments	250mA, Low-Noise, Low-Dropout Linear Voltage Regulator 5-SOT-23

102N Price and Stock

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Pulse Electronics Corporation PA4334.102NLT FIXED IND 1UH 1.87A 52 MOHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PA4334.102NLT	Cut Tape	13,875		1	1 $0.36 10 $0.296 100 $0.2212 1000 $0.15505 10000 $0.15505	Buy Now
Newark	PA4334.102NLT	Bulk	12,000		2,000	1 - 10 - 100 - 1000 $0.161 10000 $0.161	Buy Now
Pulse Electronics Corporation PA4339.102NLT CMC 8UH 3A 2LN 1.02 KOHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PA4339.102NLT	Cut Tape	3,176		1	1 $1.49 10 $1.227 100 $1.0086 1000 $0.87986 10000 $0.87986	Buy Now
	PA4339.102NLT	Digi-Reel	3,176		1	1 $1.49 10 $1.227 100 $1.0086 1000 $0.87986 10000 $0.87986	Buy Now
	PA4339.102NLT	Reel	3,000		1,500	1 - 10 - 100 - 1000 - 10000 $0.73125	Buy Now
Avnet Abacus	PA4339.102NLT	Reel		19 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	PA4339.102NLT		2,200			1 - 10 - 100 - 1000 - 10000 $0.706	Buy Now
TAIYO YUDEN LCMGA452525T102NG FERRITE BEAD 1 KOHM 1810 1LN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LCMGA452525T102NG	Reel	1,000		1,000	1 - 10 - 100 - 1000 $0.425 10000 $0.425	Buy Now
	LCMGA452525T102NG	Digi-Reel	1,000		1	1 $1.3 10 $0.909 100 $0.6084 1000 $0.43898 10000 $0.43898	Buy Now
	LCMGA452525T102NG	Cut Tape	1,000		1	1 $1.3 10 $0.909 100 $0.6084 1000 $0.43898 10000 $0.43898	Buy Now
Mouser Electronics	LCMGA452525T102NG		723			1 $1.3 10 $0.909 100 $0.609 1000 $0.425 10000 $0.425	Buy Now
Avnet Abacus	LCMGA452525T102NG			17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
TDK Electronics B82562N4102N000 FIXED IND 1UH 4.8A 11 MOHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	B82562N4102N000	Cut Tape	990		1	1 $0.79 10 $0.652 100 $0.5363 1000 $0.46782 10000 $0.46782	Buy Now
	B82562N4102N000	Digi-Reel	990		1	1 $0.79 10 $0.652 100 $0.5363 1000 $0.46782 10000 $0.46782	Buy Now
IBS Electronics	B82562N4102N000		4,596		95	1 - 10 - 100 $0.6875 1000 $0.6625 10000 $0.6375	Buy Now
Sharp Microelectronics of the Americas PC81102NSZ0F OPTOISOLATOR 5KV 1CH TRANS 4-DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PC81102NSZ0F	Tube	384		1	1 $0.19 10 $0.164 100 $0.14 1000 $0.14 10000 $0.14	Buy Now

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102N Datasheets (6)

Part	Manufacturer	Description	Datasheet Type	PDF
102N02	Directed Energy	DE-SERIES FAST POWER MOSFET	Original	PDF
102N05	Directed Energy	DE-SERIES FAST POWER MOSFET	Original	PDF
102N10	Directed Energy	DE-SERIES FAST POWER MOSFET	Original	PDF
102N20	Directed Energy	DE-SERIES FAST POWER MOSFET	Original	PDF
102NU70	Tesla	Transistor	Scan	PDF
102NU71	Tesla	Transistor	Scan	PDF

102N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
nec 2401 Abstract: 400P DE375-102N10A Directed Energy Text: Directed Energy, Inc. An DE375-102N10A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR	Original	DE375-102N10A nec 2401 400P DE375-102N10A Directed Energy	PDF
DE275X2-102N06A Abstract: 102N06 DE275X2 102N06A 400P DE-27 Text: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-102N06A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in	Original	DE275X2-102N06A DE275X2-102N06A 102N06 DE275X2 102N06A 400P DE-27	PDF
ISOPLUS247 Abstract: No abstract text available Text: Advanced Technical Information PolarHTTM HiPerFET IXFR 102N30P Power MOSFET VDSS ID25 RDS on trr = = = ≤ 300 V 60 A Ω 36 mΩ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	102N30P ISOPLUS247	PDF
203N Abstract: No abstract text available Text: RoHS POWER LINE COMMON MODE CHOKE VCMB744822 Solid Base for Stable Mounting High Current Capability Excellent EMI Suppression Fixed Pins for easy PCB Insertion Cross to Wurth 744822 Series Operating temp: -40ºC to +125ºC Part Number VCMB744822-102N VCMB744822-222N	Original	VCMB744822 VCMB744822-102N VCMB744822-222N VCMB744822-332N VCMB744822-103N VCMB744822-203N 203N	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information PolarHTTM HiPerFET IXFK 102N30P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ	Original	102N30P 405B2	PDF
102N30P Abstract: 102N30 IXTK102N30P Text: PolarHTTM Power MOSFET IXTK 102N30P VDSS = 300 V ID25 = 102 A Ω RDS on ≤ 33 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS VGSM	Original	102N30P 102N30P 102N30 IXTK102N30P	PDF
102N12 Abstract: Directed Energy Directed 400P DE375-102N12A Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE375-102N12A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	DE375-102N12A 50MHz 102N12 Directed Energy Directed 400P DE375-102N12A	PDF
KD502 Abstract: KU607 KU605 KFY18 KD503 KF517 KC507 KU608 KD3055 KFY46 Text: N lZ K O F R E K V E N C N l t r a n z i s t o r y n -p -n M e zn i hodnoty Typ h 21E h2/i>* le so p ii U c b max U cb V Uce V 101N U70 102N U70 103N U70 104N U70 10 20 20 20 20 25 25 25 105N U70 106N U70 107N U70 32 32 32 3 0 ’ 3 0 ') 30') 10 10 10 101NU71	OCR Scan	101NU70 102NU70 103NU70 104NU70 105NU70 106NU70 107NU70 101NU71 102NU71 103NU71 KD502 KU607 KU605 KFY18 KD503 KF517 KC507 KU608 KD3055 KFY46	PDF
DE375-102N10A Abstract: No abstract text available Text: Directed Energy, Inc. An DE375-102N10A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000	Original	DE375-102N10A DE375-102N10A	PDF
102N20 Abstract: 3RH1140-1AD00 Directed Energy Text: PRELIMINARY SPECIFICATIONS DE-375X2 102N20 20A, 1000V, 0.6Ω US Patent #4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com	Original	DE-375X2 102N20 150oC 102N20 3RH1140-1AD00 Directed Energy	PDF
DE-375-102N10 Abstract: 102N10 DE-375 Text: PRELIMINARY SPECIFICATIONS DE-375 102N10 10A, 1000V, 1.2Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com	Original	DE-375 102N10 150oC DE-375-102N10 102N10	PDF
102N05 Abstract: DE-275 Text: PRELIMINARY SPECIFICATIONS DE-275 102N05 5A, 1000V, 2.6Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com	Original	DE-275 102N05 150oC 102N05	PDF
Untitled Abstract: No abstract text available Text: PolarHTTM Power MOSFET VDSS = 300 V ID25 = 102 A Ω RDS on ≤ 33 mΩ IXTK 102N30P N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS VGSM	Original	102N30P O-264	PDF
Untitled Abstract: No abstract text available Text: TECHNICAL DATA SHEET RF_35/12.04/3.0 Dieses Dokument ist urheberrechtlich geschützt ● This document is protected by copyright ● Rosenberger Hochfrequenztechnik GmbH & Co. KG QMA 28S107-102N5 STRAIGHT PLUG All dimensions are in mm; tolerances according to ISO 2768 m-H	Original	28S107-102N5 28S000-000, D-84526	PDF

13.56MHZ 3KW GENERATOR Abstract: 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv Text: DIRECTED ENERGY, INC. TECHNICAL NOTE 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS AT 13.56MHz WITH 89% EFFICENCY AND LIMITED FREQUENCY AGILITY Abstract DEI / IXYS has developed an RF generator design for very high power at a ISM frequency. of 13.56MHz, using a pair of DE375-102N12A	Original	56MHz 56MHz, DE375-102N12A DEIC420 DE375-102N12A 0-471-03018-X 13.56MHZ 3KW GENERATOR 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv	PDF
13.56mhz c class amp Abstract: ferrite core binocular air variable capacitor mp850 25.0 DE275-102N06A Text: DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient	Original	DE275-102N06A 102N06A 13.56mhz c class amp ferrite core binocular air variable capacitor mp850 25.0 DE275-102N06A	PDF
IXFN102N30P Abstract: No abstract text available Text: PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM	Original	102N30P IXFN102N30P	PDF
nec 2401 Abstract: DE375-102N10A "RF MOSFETs" 400P Text: DE375-102N10A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient	Original	DE375-102N10A nec 2401 DE375-102N10A "RF MOSFETs" 400P	PDF
102NU71 Abstract: nU71 107NU70 101NU71 104NU71 tranzistory NPN TRANZISTOR h21E tesla ScansUX7 Text: NIZKOFREKVENCNÌ N-P-N TRANZISTORY 102N U 71 Pouziti: P o lo v o d ic o v é s o uca stky n -p -n , v h o d n é TESLA p re d e v s im p ro 102NU71 js o u p lo s n é p o u z iti v e s p in a c i a n iz k o fre k v e n c n i tra n z is to ry im p u ls n i te c h n ic e ,	OCR Scan	102NU71 nU71 107NU70 101NU71 104NU71 tranzistory NPN TRANZISTOR h21E tesla ScansUX7	PDF
DE475-102N21A Abstract: PIN diode SPICE model 102N21A 400P 102n21 pin model spice pin diode model spice Text: DE475-102N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	DE475-102N21A 30MHz DE475-102N21A PIN diode SPICE model 102N21A 400P 102n21 pin model spice pin diode model spice	PDF
air variable capacitor Abstract: 13.56mhz c class amp DE275-102N06A 102N06A GME90901 DE275102N06A 102N06 KW 13.56MHz 102KW 10-DOF Text: DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Maximum Ratings VDSS = 1000 V ID25 = 8A RDS on = 1.5 Ω PDC = 590 W Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	DE275-102N06A 102N06A air variable capacitor 13.56mhz c class amp DE275-102N06A GME90901 DE275102N06A 102N06 KW 13.56MHz 102KW 10-DOF	PDF
Untitled Abstract: No abstract text available Text: TECHNICAL DATA SHEET RF_35/12.04/3.0 Dieses Dokument ist urheberrechtlich geschützt ● This document is protected by copyright ● Rosenberger Hochfrequenztechnik GmbH & Co. KG QMA 28S161-102N5 STRAIGHT PLUG All dimensions are in mm; tolerances according to ISO 2768 m-H	Original	28S161-102N5 28S000-000, D-84526	PDF
Untitled Abstract: No abstract text available Text: TECHNICAL DATA SHEET QMA 28K101-102N5-NM STRAIGHT JACK All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to Rosenberger 28K000-000, series QMA Rosenberger is an authorised QLF manufacturer Documents Assembly instruction 28E	Original	28K101-102N5-NM 28K000-000, D-84526 18g/pce 09-s509	PDF
DE375-102N12A Abstract: 400P Text: DE375-102N12A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	DE375-102N12A 50MHz DE375-102N12A 400P	PDF

102N Search Results

102N Result Highlights (5)

102N Price and Stock

Pulse Electronics Corporation PA4334.102NLT

Pulse Electronics Corporation PA4339.102NLT

TAIYO YUDEN LCMGA452525T102NG

TDK Electronics B82562N4102N000

Sharp Microelectronics of the Americas PC81102NSZ0F

102N Datasheets (6)

102N Datasheets Context Search

nec 2401

DE275X2-102N06A

ISOPLUS247

203N

Untitled

102N30P

102N12

KD502

DE375-102N10A

102N20

DE-375-102N10

102N05

Untitled

Untitled

13.56MHZ 3KW GENERATOR

13.56mhz c class amp

IXFN102N30P

nec 2401

102NU71

DE475-102N21A

air variable capacitor

Untitled

Untitled

DE375-102N12A