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    102N Search Results

    102N Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MSS1278T-102NLB Coilcraft Inc General Purpose Inductor, 1uH, 30%, 1 Element, Ferrite-Core, SMD, 4747, ROHS COMPLIANT Visit Coilcraft Inc
    LPS4018-102NRB Coilcraft Inc General Purpose Inductor, 1uH, 30%, 1 Element, Ferrite-Core, SMD, 1515, CHIP, 1515, HALOGEN FREE AND ROHS COMPLIANT Visit Coilcraft Inc
    LPS4012-102NLB Coilcraft Inc General Purpose Inductor, 1uH, 30%, 1 Element, Ferrite-Core, SMD, 1515, ROHS COMPLIANT Visit Coilcraft Inc
    MSS1038-102NLB Coilcraft Inc General Purpose Inductor, 1uH, 30%, 1 Element, Ferrite-Core, SMD, 4039, ROHS COMPLIANT Visit Coilcraft Inc
    MSS1278T-102NLD Coilcraft Inc General Purpose Inductor, 1uH, 30%, 1 Element, Ferrite-Core, SMD, 4747, ROHS COMPLIANT Visit Coilcraft Inc
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    102N Price and Stock

    Bourns Inc CE201210-2N7D

    FIXED IND 2.7NH 300MA 100MOHM SM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CE201210-2N7D Cut Tape 19,541 1
    • 1 $0.1
    • 10 $0.085
    • 100 $0.0604
    • 1000 $0.04145
    • 10000 $0.04145
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    CE201210-2N7D Digi-Reel 19,541 1
    • 1 $0.1
    • 10 $0.085
    • 100 $0.0604
    • 1000 $0.04145
    • 10000 $0.04145
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    CE201210-2N7D Reel 16,000 4,000
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    • 10000 $0.03685
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    Coilcraft Inc MSS1260-102NLD

    FIXED IND 1UH 8A 6.5MOHM SM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MSS1260-102NLD Reel 3,367 1
    • 1 $2.79
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    Coilcraft Direct MSS1260-102NLD 4,209 1
    • 1 $2.23
    • 10 $2.23
    • 100 $2.23
    • 1000 $0.69
    • 10000 $0.55
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    ROHM Semiconductor ML610Q102-NNNGDZ05BX

    IC MCU 8BIT 6KB FLASH 16WQFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ML610Q102-NNNGDZ05BX Reel 2,000 1,000
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    • 1000 $0.94395
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    ML610Q102-NNNGDZ05BX Cut Tape 2,000 1
    • 1 $1.86
    • 10 $1.67
    • 100 $1.3424
    • 1000 $1.10292
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    ML610Q102-NNNGDZ05BX Digi-Reel 2,000 1
    • 1 $1.86
    • 10 $1.67
    • 100 $1.3424
    • 1000 $1.10292
    • 10000 $1.10292
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    Alpha Wire 55102-NA199

    CBL 2COND 22AWG NTRL FEET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 55102-NA199 529 1
    • 1 $20.47
    • 10 $17.376
    • 100 $16.1872
    • 1000 $16.1872
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    TDK Epcos B82724J2102N001

    CMC 33MH 1A 2LN TH
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    DigiKey B82724J2102N001 Tray 429 1
    • 1 $3.35
    • 10 $2.604
    • 100 $2.069
    • 1000 $1.76127
    • 10000 $1.76127
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    TME B82724J2102N001 240
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    Find more 102N price and stock on Findchips.com

    102N Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    102N02 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF
    102N05 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF
    102N10 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF
    102N20 Directed Energy DE-SERIES FAST POWER MOSFET Original PDF
    102NU70 Tesla Transistor Scan PDF
    102NU71 Tesla Transistor Scan PDF

    102N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    nec 2401

    Abstract: 400P DE375-102N10A Directed Energy
    Text: Directed Energy, Inc. An DE375-102N10A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR


    Original     		PDF DE375-102N10A nec 2401 400P DE375-102N10A Directed Energy

    DE275X2-102N06A

    Abstract: 102N06 DE275X2 102N06A 400P DE-27
    Text: Directed Energy, Inc. IXYS Company An ♦ ♦ ♦ ♦ ♦ DE275X2-102N06A RF Power MOSFET Preliminary Data Sheet Common Source Push-Pull Pair N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching The DE275X2-102N06A is a matched pair of RF power MOSFET devices in


    Original     		PDF DE275X2-102N06A DE275X2-102N06A 102N06 DE275X2 102N06A 400P DE-27

    ISOPLUS247

    Abstract: No abstract text available
    Text: Advanced Technical Information PolarHTTM HiPerFET IXFR 102N30P Power MOSFET VDSS ID25 RDS on trr = = = ≤ 300 V 60 A Ω 36 mΩ 200 ns N-Channel Enhancement Mode Fast Intrinsic Diode Symbol Test Conditions VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 102N30P ISOPLUS247

    203N

    Abstract: No abstract text available
    Text: RoHS POWER LINE COMMON MODE CHOKE VCMB744822 Solid Base for Stable Mounting High Current Capability Excellent EMI Suppression Fixed Pins for easy PCB Insertion Cross to Wurth 744822 Series Operating temp: -40ºC to +125ºC Part Number VCMB744822-102N VCMB744822-222N


    Original     		PDF VCMB744822 VCMB744822-102N VCMB744822-222N VCMB744822-332N VCMB744822-103N VCMB744822-203N 203N

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarHTTM HiPerFET IXFK 102N30P Power MOSFET VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 150° C 300 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ


    Original     		PDF 102N30P 405B2

    102N30P

    Abstract: 102N30 IXTK102N30P
    Text: PolarHTTM Power MOSFET IXTK 102N30P VDSS = 300 V ID25 = 102 A Ω RDS on ≤ 33 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS VGSM


    Original     		PDF 102N30P 102N30P 102N30 IXTK102N30P

    102N12

    Abstract: Directed Energy Directed 400P DE375-102N12A
    Text: Directed Energy, Inc. An ♦ ♦ ♦ ♦ ♦ DE375-102N12A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF DE375-102N12A 50MHz 102N12 Directed Energy Directed 400P DE375-102N12A

    DE375-102N10A

    Abstract: No abstract text available
    Text: Directed Energy, Inc. An DE375-102N10A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000


    Original     		PDF DE375-102N10A DE375-102N10A

    102N20

    Abstract: 3RH1140-1AD00 Directed Energy
    Text: PRELIMINARY SPECIFICATIONS DE-375X2 102N20 20A, 1000V, 0.6Ω US Patent #4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


    Original     		PDF DE-375X2 102N20 150oC 102N20 3RH1140-1AD00 Directed Energy

    DE-375-102N10

    Abstract: 102N10 DE-375
    Text: PRELIMINARY SPECIFICATIONS DE-375 102N10 10A, 1000V, 1.2Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


    Original     		PDF DE-375 102N10 150oC DE-375-102N10 102N10

    102N05

    Abstract: DE-275
    Text: PRELIMINARY SPECIFICATIONS DE-275 102N05 5A, 1000V, 2.6Ω US Patents 4891686, 5640045 Foreign Patents Pending 04/1999 Directed Energy, Incorporated 2401 Research Blvd, Suite 108 Fort Collins, CO USA 80526 (970) 493-1901 FAX (970) 493-1903 INTERNET www.dirnrg.com


    Original     		PDF DE-275 102N05 150oC 102N05

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET VDSS = 300 V ID25 = 102 A Ω RDS on ≤ 33 mΩ IXTK 102N30P N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ 300 300 V V VGSS VGSM


    Original     		PDF 102N30P O-264

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET RF_35/12.04/3.0 Dieses Dokument ist urheberrechtlich geschützt ● This document is protected by copyright ● Rosenberger Hochfrequenztechnik GmbH & Co. KG QMA 28S107-102N5 STRAIGHT PLUG All dimensions are in mm; tolerances according to ISO 2768 m-H


    Original     		PDF 28S107-102N5 28S000-000, D-84526

    13.56MHZ 3KW GENERATOR

    Abstract: 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv
    Text: DIRECTED ENERGY, INC. TECHNICAL NOTE 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS AT 13.56MHz WITH 89% EFFICENCY AND LIMITED FREQUENCY AGILITY Abstract DEI / IXYS has developed an RF generator design for very high power at a ISM frequency. of 13.56MHz, using a pair of DE375-102N12A


    Original     		PDF 56MHz 56MHz, DE375-102N12A DEIC420 DE375-102N12A 0-471-03018-X 13.56MHZ 3KW GENERATOR 3KW GENERATOR mosfet 5kw high power rf 5kw switching power supply design HIGH FREQUENCY 5kw power Transformer circuit diagram of 13.56MHz RF Generator mosfet 3kw 3kW AND 5kW HALF-BRIDGE CLASS-D RF GENERATORS 3kw mosfet equivalent circuit of power transformer 11kv

    IXFN102N30P

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET IXFN 102N30P Power MOSFET VDSS ID25 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode trr RDS on Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 300 300 V V VGS VGSM


    Original     		PDF 102N30P IXFN102N30P

    nec 2401

    Abstract: DE375-102N10A "RF MOSFETs" 400P
    Text: DE375-102N10A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient


    Original     		PDF DE375-102N10A nec 2401 DE375-102N10A "RF MOSFETs" 400P

    DE475-102N21A

    Abstract: PIN diode SPICE model 102N21A 400P 102n21 pin model spice pin diode model spice
    Text: DE475-102N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF DE475-102N21A 30MHz DE475-102N21A PIN diode SPICE model 102N21A 400P 102n21 pin model spice pin diode model spice

    air variable capacitor

    Abstract: 13.56mhz c class amp DE275-102N06A 102N06A GME90901 DE275102N06A 102N06 KW 13.56MHz 102KW 10-DOF
    Text: DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Maximum Ratings VDSS = 1000 V ID25 = 8A RDS on = 1.5 Ω PDC = 590 W Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		PDF DE275-102N06A 102N06A air variable capacitor 13.56mhz c class amp DE275-102N06A GME90901 DE275102N06A 102N06 KW 13.56MHz 102KW 10-DOF

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET RF_35/12.04/3.0 Dieses Dokument ist urheberrechtlich geschützt ● This document is protected by copyright ● Rosenberger Hochfrequenztechnik GmbH & Co. KG QMA 28S161-102N5 STRAIGHT PLUG All dimensions are in mm; tolerances according to ISO 2768 m-H


    Original     		PDF 28S161-102N5 28S000-000, D-84526

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET QMA 28K101-102N5-NM STRAIGHT JACK All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to Rosenberger 28K000-000, series QMA Rosenberger is an authorised QLF manufacturer Documents Assembly instruction 28E


    Original     		PDF 28K101-102N5-NM 28K000-000, D-84526 18g/pce 09-s509

    DE375-102N12A

    Abstract: 400P
    Text: DE375-102N12A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF DE375-102N12A 50MHz DE375-102N12A 400P

    KD502

    Abstract: KU607 KU605 KFY18 KD503 KF517 KC507 KU608 KD3055 KFY46
    Text: N lZ K O F R E K V E N C N l t r a n z i s t o r y n -p -n M e zn i hodnoty Typ h 21E h2/i>* le so p ii U c b max U cb V Uce V 101N U70 102N U70 103N U70 104N U70 10 20 20 20 20 25 25 25 105N U70 106N U70 107N U70 32 32 32 3 0 ’ 3 0 ') 30') 10 10 10 101NU71


    OCR Scan     		PDF 101NU70 102NU70 103NU70 104NU70 105NU70 106NU70 107NU70 101NU71 102NU71 103NU71 KD502 KU607 KU605 KFY18 KD503 KF517 KC507 KU608 KD3055 KFY46

    101NU70

    Abstract: 103NU70 102NU70 104NU70 CE3020 tranzistor ScansUX7 Tranzistory
    Text: 101IMU70 103NU70 102NU70 104NU70 NÌZKOFREKVENCNÌ N -P-N TRANZISTORY Pouziti: P o lo v o d ic o v é so ucà stky TESLA 101NU70 a z 104NU70 js o u n iz k o fre k v e n c n i g e rm a n io v é p lo s n é tra n z is io ry ty p u n -p -n se z tra to v y m vykone m 50 m W , u rc e n é p ro ste jn o s m é rn é


    OCR Scan     		PDF 101NU70 102NU70 103NU70 104NU70 CE3020 tranzistor ScansUX7 Tranzistory

    102NU71

    Abstract: nU71 107NU70 101NU71 104NU71 tranzistory NPN TRANZISTOR h21E tesla ScansUX7
    Text: NIZKOFREKVENCNÌ N-P-N TRANZISTORY 102N U 71 Pouziti: P o lo v o d ic o v é s o uca stky n -p -n , v h o d n é TESLA p re d e v s im p ro 102NU71 js o u p lo s n é p o u z iti v e s p in a c i a n iz k o fre k v e n c n i tra n z is to ry im p u ls n i te c h n ic e ,


    OCR Scan     		PDF 102NU71 nU71 107NU70 101NU71 104NU71 tranzistory NPN TRANZISTOR h21E tesla ScansUX7