nec 2401
Abstract: DE150-101N09A PIN diode SPICE model 101N09A
Text: DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient
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DE150-101N09A
1100P
nec 2401
DE150-101N09A
PIN diode SPICE model
101N09A
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PIN diode SPICE model
Abstract: DE150-101N09A rf power mosfet 1n spice 101N09A
Text: DE150-101N09A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100
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Original
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PDF
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DE150-101N09A
101N09A
1100P
PIN diode SPICE model
DE150-101N09A
rf power mosfet
1n spice
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nec 2401
Abstract: QGS 80W 30 ohm Directed Energy DE150-101N09A 201N09
Text: Directed Energy, Inc. An DE150-101N09A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR
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Original
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PDF
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DE150-101N09A
1100P
nec 2401
QGS 80W 30 ohm
Directed Energy
DE150-101N09A
201N09
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DE275-101N30A
Abstract: DE-275-101N30 de275 PIN diode SPICE model
Text: DE275-101N30A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient
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Original
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PDF
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DE275-101N30A
101N09A
1100P
DE275-101N30A
DE-275-101N30
de275
PIN diode SPICE model
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