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    TAIYO YUDEN MSAYU168SSD222KTNA01

    CAP CER 2200PF 50V 0603
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    DigiKey MSAYU168SSD222KTNA01 Cut Tape 4,000 1
    • 1 $0.32
    • 10 $0.188
    • 100 $0.1216
    • 1000 $0.08743
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    MSAYU168SSD222KTNA01 Reel 4,000 4,000
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    MSAYU168SSD222KTNA01 Digi-Reel 4,000 1
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    Avnet Abacus MSAYU168SSD222KTNA01 Reel 17 Weeks 4,000
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    TAIYO YUDEN MSAYL168SSD223KTNA01

    CAP CER 0.022UF 10V 0603
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    DigiKey MSAYL168SSD223KTNA01 Cut Tape 4,000 1
    • 1 $0.31
    • 10 $0.184
    • 100 $0.1193
    • 1000 $0.08566
    • 10000 $0.08566
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    MSAYL168SSD223KTNA01 Digi-Reel 4,000 1
    • 1 $0.31
    • 10 $0.184
    • 100 $0.1193
    • 1000 $0.08566
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    MSAYL168SSD223KTNA01 Reel 4,000 4,000
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    Avnet Abacus MSAYL168SSD223KTNA01 Reel 17 Weeks 4,000
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    Bivar Inc SSD-250

    CARD GUIDE SNAP 2.5LX.075"SW NAT
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    DigiKey SSD-250 Box 2,404 1
    • 1 $0.47
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    Mouser Electronics SSD-250
    • 1 $0.9
    • 10 $0.786
    • 100 $0.648
    • 1000 $0.464
    • 10000 $0.418
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    Powell Electronics SSD-250 7,575 100
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    • 1000 $0.4323
    • 10000 $0.2862
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    IBS Electronics SSD-250 5,000
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    Vishay Sfernice RSSD20117A4R70KB15

    ADJ PWR RES 4.7 OHM 100W CHAS MT
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    DigiKey RSSD20117A4R70KB15 Bulk 21 1
    • 1 $78.39
    • 10 $78.39
    • 100 $46.0466
    • 1000 $46.0466
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    IDEC Corporation RV8S-S-D24-D24

    SSR RELAY SPST-NO 3.5A 0-24V
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    DigiKey RV8S-S-D24-D24 Bulk 11 1
    • 1 $41.95
    • 10 $37.357
    • 100 $33.2604
    • 1000 $31.75596
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    RS RV8S-S-D24-D24 Bulk 29 5 Weeks 1
    • 1 $42.37
    • 10 $40.25
    • 100 $33.9
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    Master Electronics RV8S-S-D24-D24 18
    • 1 $43.61
    • 10 $36.62
    • 100 $32.45
    • 1000 $30.98
    • 10000 $30.98
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    Neutron USA RV8S-S-D24-D24 50
    • 1 $146.12
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    • 100 $146.12
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    Sager RV8S-S-D24-D24 1
    • 1 $38.18
    • 10 $35.25
    • 100 $25.97
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    SSD2 Datasheets (28)

    Part
    ECAD Model
    Manufacturer
    Description
    Curated
    Datasheet Type
    PDF
    SSD2 Cooper Bussmann 2A:240V:HRC Fuse Original PDF
    SSD20 Cooper Bussmann 20A:240V:HRC Fuse Original PDF
    SSD2003 Samsung Electronics Dual N-Channel Power MOSFET Scan PDF
    SSD2005 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SSD2007 Fairchild Semiconductor Dual N-CHANNEL POWER MOSFET Original PDF
    SSD2007 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SSD2007A Fairchild Semiconductor Dual N-Channel Power MOSFET Original PDF
    SSD2007ASTF Fairchild Semiconductor 50V N-Channel Dual Power MOSFET Original PDF
    SSD2007ATF Fairchild Semiconductor 50V N-Channel Dual Power MOSFET Original PDF
    SSD2008A Fairchild Semiconductor 30V N/P Dual Power MOSFET Original PDF
    SSD2009 Fairchild Semiconductor Dual N-CHANNEL POWER MOSFET Original PDF
    SSD2009A Fairchild Semiconductor Dual N-Channel Power MOSFET Original PDF
    SSD2009ATF Fairchild Semiconductor 50V N-Channel Dual Power MOSFET Original PDF
    SSD2011A Fairchild Semiconductor Dual P-Channel Power MOSFET Original PDF
    SSD2011ATF Fairchild Semiconductor 60V P-Channel Dual Power MOSFET Original PDF
    SSD2019A Fairchild Semiconductor 20V P-Channel Dual Power MOSFET Original PDF
    SSD2019A Fairchild Semiconductor Dual P-CHANNEL POWER MOSFET Original PDF
    SSD2021 Fairchild Semiconductor 30V N-Channel Dual Power MOSFET Original PDF
    SSD2021 Fairchild Semiconductor Dual N-CHANNEL POWER MOSFET Original PDF
    SSD2025 Fairchild Semiconductor Dual N-CHANNEL POWER MOSFET Original PDF

    SSD2 Datasheets Context Search

    Catalog Datasheet
    Type
    Document Tags
    PDF

    Untitled

    Abstract: No abstract text available
    Text: SSD20P03 P-Ch Enhancement Mode Power MOSFET -20 A, -30 V, RDS ON 36 mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION The SSD20P03 uses advanced trench technology to provide excellent on-resistance, low gate charge and low gate


    Original     		SSD20P03 SSD20P03 O-252 300us, 01-June-2002 PDF

    SSD20P03-60

    Abstract: MosFET dpack power mosfet
    Text: SSD20P03-60 P-Ch Enhancement Mode Power MOSFET 24A, -30V, RDS ON 59mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation.


    Original     		SSD20P03-60 O-252 18-May-2010 SSD20P03-60 MosFET dpack power mosfet PDF

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS SSD2101 FEATURES • • • • • • • 8SOIC Lower R d s o n Improved inductive ruggedness Fast sw itching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		SSD2101 PDF

    Untitled

    Abstract: No abstract text available
    Text: DUAL P-CHANNEL POWER MOSFETS SSD2015 FEATURES • Lower R ds<on • Improved inductive ruggedness • Fast switching times • Rugged polysiitcon gate ceil structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		SSD2015 300/iS, D05TS13 PDF

    SSD2005

    Abstract: P-CHANNEL POWER MOSFET
    Text: SSD2005 Dual P-CHANNEL POWER MOSFET FEATURES 8SOIC • Lower Rds on ■ improved Inductive Ruggedness Si ■ Fast Switching Times gi q t ■ Lower Input Capacitance ■ Extended Safe Operating Area ■ Improved High Temperature Reliability [T o S2 ~8~l Pi


    OCR Scan     		SSD2005 SSD2005 P-CHANNEL POWER MOSFET PDF

    c550c

    Abstract: mosfet 751
    Text: SSD2004 N&P-CHANNEL POWER MOSFET FEATURES 8 SOIC • Lower Rds on ■ Improved Inductive Ruggedness si [ T ~BlD i ■ Fast Switching Times Gì [ j T ~ n 01 ■ Lower Input Capacitance Si [ X ~6~l Dì Gj [ T H jD i ■ Extended Safe Operating Area ■ Improved High Temperature Reliability


    OCR Scan     		SSD2004 SSD2004 00A/ns c550c mosfet 751 PDF

    SSD20N20-125D

    Abstract: MosFET MOSFET N-CH 200V
    Text: SSD20N20-125D 12A , 200V , RDS ON 260mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFET utilize a high cell density trench process to provide low RDS(on)


    Original     		SSD20N20-125D O-252 O-252 13-Sep-2013 SSD20N20-125D MosFET MOSFET N-CH 200V PDF

    SSD20P15-295D

    Abstract: MosFET
    Text: SSD20P15-295D -10.7A, -150V, RDS ON 295mΩ Ω P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process.Low RDS(on) assures minimal power loss


    Original     		SSD20P15-295D -150V, O-252 10-Sep-2013 SSD20P15-295D MosFET PDF

    Untitled

    Abstract: No abstract text available
    Text: SSD2030N N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 30V 20A TO-252 RDS(ON) (mΩ) Max D 30 @VGS = 10V G 55 @VGS = 4.5V S D FEATURES ◆ Super high dense cell design for low RDS(ON). G ◆ Rugged and reliable. ◆ TO-252 package. S o ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)


    Original     		SSD2030N O-252 O-252 PDF

    SSD2008

    Abstract: SSD2008A
    Text: SSD2008A !"#$ !"#$%&'!! *#+,(-*.+/0(1 FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 • Lower RDS(ON) S2 3 6 D2 ■ Improved Inductive Ruggedness ■ Fast Swtching Times G2 4 5 D2 ■ Low Input Capacitance ■ Extended Safe Operating Area D1 D1 Top View S2 ■ Improved High Temperature Reliability


    Original     		SSD2008A SSD2008 SSD2008 SSD2008A PDF

    SSD20P06-135D

    Abstract: MosFET 135D
    Text: SSD20P06-135D P-Ch Enhancement Mode Power MOSFET 16A, -60V, RDS ON 135mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat


    Original     		SSD20P06-135D O-252 25-Aug-2010 SSD20P06-135D MosFET 135D PDF

    SSD2009

    Abstract: TP150 2TS01
    Text: DUAL N-CHANNEL POWER MOSFETS SSD2009 FEATURES • • • • • • • 8SO IC Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability


    OCR Scan     		SSD2009 SSD2009 TP150 2TS01 PDF

    SSD2004

    Abstract: 250M
    Text: N&P-CHANNEL POWER MOSFETS SSD2004 FEATURES • Extremely Lower R ds on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		SSD2004 SSD2004 00A/iiS 300//s, 250M PDF

    SSD2007A

    Abstract: ISS106
    Text: SSD2007A Dual N-CHANNEL POWER MOSFET FEATURES 8 SOP ‰ Extremely Lower RDS ON ‰ Improved Inductive Ruggedness ‰ Fast Switching Times S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View ‰ Rugged Polysilicon Gate Cell Structure ‰ Low Input Capacitance D1,D2


    Original     		SSD2007A SSD2007A ISS106 PDF

    MOSFET 7121

    Abstract: PN channel MOSFET 10A SSD2025
    Text: SSD2025 Dual N-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS on S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Low Input Capacitance ! Extended Safe Operating Area D1,D2 D1,D2 ! Improved High Temperature Reliability


    Original     		SSD2025 MOSFET 7121 PN channel MOSFET 10A SSD2025 PDF

    transistor ssd2008

    Abstract: SSD2008 SSD2008A Dual P-Channel 2.5 V G-S MOSFET, drain-source voltage -30v
    Text: SSD2008A Dual P-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 ! Low Input Capacitance ! Extended Safe Operating Area D1 D1 Top View D2 D2 ! Improved High Temperature Reliability


    Original     		SSD2008A SSD2008 transistor ssd2008 SSD2008 SSD2008A Dual P-Channel 2.5 V G-S MOSFET, drain-source voltage -30v PDF

    Untitled

    Abstract: No abstract text available
    Text: SSD2025 Dual N-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS on S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Low Input Capacitance ! Extended Safe Operating Area D1,D2 D1,D2 ! Improved High Temperature Reliability


    Original     		SSD2025 SSD2025 -SD2025TF PDF

    Untitled

    Abstract: No abstract text available
    Text: SSD2011A Dual P-CHANNEL POWER MOSFET FEATURES 8 SOIC S1 1 8 D1 G1 2 7 D1 ! Lower RDS ON S2 3 6 D2 ! Improved Inductive Ruggedness ! Fast Switching Times G2 4 5 D2 Top View ! Low Input Capacitance ! Extended Safe Operating Area D1 D2 ! Improved High Temperature Reliability


    Original     		SSD2011A SSD2011A 12011ATF PDF

    Untitled

    Abstract: No abstract text available
    Text: SSD2009A Dual N-CHANNEL POWER MOSFET FEATURES 8 SOIC n Lower RDS ON n Improved Inductive Ruggedness n Fast Swtching Times S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View n Low Input Capacitance n Extended Safe Operating Area D1 D1 n Improved High Temperature Reliability


    Original     		SSD2009A SSD2009 PDF

    SSD20N06-90D

    Abstract: MosFET 90D 22
    Text: SSD20N06-90D N-Ch Enhancement Mode Power MOSFET 19A, 60V, RDS ON 94 mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density


    Original     		SSD20N06-90D O-252 te300 30-Aug-2010 SSD20N06-90D MosFET 90D 22 PDF

    12a36

    Abstract: No abstract text available
    Text: SSD20N15-250D N-Ch Enhancement Mode Power MOSFET 12A, 150V, RDS ON 255mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation.


    Original     		SSD20N15-250D O-252 22-Jul-2010 12a36 PDF

    SSD2003

    Abstract: U2020 W749
    Text: SSD2003 Dual N-CHANNEL POWER MOSFET FE A T U R E S • Lower Rds on ■ Improved Inductive Ruggedness ■ Fast Switching Times ■ Lower Input Capacitance ■ Extended Safe Operating Area ■ Improved High Temperature Reliability Product Summary Part Number


    OCR Scan     		SSD2003 SSD2003 00A/ns U2020 W749 PDF

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL POWER MOSFETS SSD2104 FEATURES • • • • • • • Lower Rds<on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		SSD2104 00A///S to150Â PDF

    Untitled

    Abstract: No abstract text available
    Text: DUAL N-CHANNEL POWER MOSFETS SSD2013 FEATURES • • • • • • • 8SOIC Lower Rds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		SSD2013 Cto150â PDF