DE275102N06A Search Results

DE275102N06A Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
DE275-102N06A		Directed Energy	RF Power MOSFET		Original	PDF
DE275-102N06A		IXYS	TRANS MOSFET N-CH 1000V 8A 6DE 275		Original	PDF

DE275102N06A Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
13.56mhz c class amp Abstract: ferrite core binocular air variable capacitor mp850 25.0 DE275-102N06A Text: DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient	Original	DE275-102N06A 102N06A 13.56mhz c class amp ferrite core binocular air variable capacitor mp850 25.0 DE275-102N06A	PDF
air variable capacitor Abstract: 13.56mhz c class amp DE275-102N06A 102N06A GME90901 DE275102N06A 102N06 KW 13.56MHz 102KW 10-DOF Text: DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications Maximum Ratings VDSS = 1000 V ID25 = 8A RDS on = 1.5 Ω PDC = 590 W Symbol Test Conditions VDSS TJ = 25°C to 150°C	Original	DE275-102N06A 102N06A air variable capacitor 13.56mhz c class amp DE275-102N06A GME90901 DE275102N06A 102N06 KW 13.56MHz 102KW 10-DOF	PDF
IXDD415SI Abstract: IXDD415 DE-275 EVDD415 DE275102N06A DE-150 Directed PUSH PULL MOSFET DRIVER DE275 DE275-102N06A Text: EVDD415 IXDD415 High Frequency Gate Driver IC Evaluation Board General Description The EVDD415 evaluation board is a general-purpose circuit board designed to simplify the evaluation of the IXYS/DEI IXDD415 gate drive IC, as well as to provide a building block	Original	EVDD415 IXDD415 EVDD415 IXDD415SI SO-28 EVDD415. DE150 DE-275 DE275102N06A DE-150 Directed PUSH PULL MOSFET DRIVER DE275 DE275-102N06A	PDF
102N06A Abstract: 400P DE275-102N06A 10-DOF 102N06 Text: Directed Energy, Inc. An DE275-102N06A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	DE275-102N06A 102N06A 400P DE275-102N06A 10-DOF 102N06	PDF
DE275-102N06X2A Abstract: 102n06x2a amplifier circuit diagram class D 1000w PRF-1150 circuit diagram of 13.56MHz RF Generator plasma DE275X2-102N06A DEIC420 RF MOSFET Gate Driver IC 13.56Mhz rf 1W amplifier module circuit diagram of 13.56MHz RF Generator Class E power amplifier, 13.56MHz Text: DIRECTED ENERGY, INC.TECHNICAL NOTE PRF-1150 1KW 13.56 MHz CLASS E RF GENERATOR EVALUATION MODULE Matthew W. Vania Directed Energy, Inc. Abstract The PRF-1150 module is a self-contained 1KW 13.56MHz RF source. The module facilitates operation and evaluation of the DEIC420 RF MOSFET gate	Original	PRF-1150 56MHz DEIC420 DE275X2-102N06A 0-471-03018-X DE275-102N06X2A 102n06x2a amplifier circuit diagram class D 1000w circuit diagram of 13.56MHz RF Generator plasma DEIC420 RF MOSFET Gate Driver IC 13.56Mhz rf 1W amplifier module circuit diagram of 13.56MHz RF Generator Class E power amplifier, 13.56MHz	PDF
DE275-102N06A Abstract: DE375-102N10A DE375-501N16A Text: RF Power MOSFETs VDSS ID25 RDS on max V 500 TC = 25 °C A 16 Ω 0.5 DE375-501N16A 1000 6 2.0 DE275-102N06A 10 1.2 DE375-102N10A Part Number Note: These part types are available from Directed Energy, Inc.	Original	DE375-501N16A DE275-102N06A DE375-102N10A DE275-102N06A DE375-102N10A DE375-501N16A	PDF
DE275-102N06A Abstract: 900 v 6 amp mosfet 102N06A 400P 10-DOF 102N Text: DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient	Original	DE275-102N06A 102N06A DE275-102N06A 900 v 6 amp mosfet 400P 10-DOF 102N	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
102N06 Abstract: DE275X2-102N06A PLUS247 501N2 DE275-501N16A DE475-501N44A H12N50 DE475-102N21A ISOPLUS247 IXFX Text: 500KHz-82MHz POWER MOSFETS O SWITCH MODE POWER SUPPLIES & RF GENERATORS January 2003 The IXYS RF Switch Mode MOSFET family is ideal for applications requiring fast switching including laser driver, induction heating, switch mode power supplies and other non-linear industrial applications. An extensive product	Original	500KHz-82MHz O-247 PLUS247 ISOPLUS247 102N06 DE275X2-102N06A PLUS247 501N2 DE275-501N16A DE475-501N44A H12N50 DE475-102N21A ISOPLUS247 IXFX	PDF
Directed Energy Abstract: DE275-102N06A Text: Directed Energy, Inc. An DE275-102N06A IXYS Company RF Power MOSFET Preliminary Data Sheet N-Channel Enhancement Mode Avalanche Rated Low Qg and Rg High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000	Original	DE275-102N06A Directed Energy DE275-102N06A	PDF
DEIC420 RF MOSFET Gate Driver IC Abstract: 102N06 DEIC420 DE-275 DE275-102N06A EVIC420-B RF MOSFET Driver Directed Energy series connection of mosfet DE-375 Text: EVIC420 DEIC420 High Frequency Gate Driver IC Evaluation Board General Description The EVIC420 evaluation board is a general-purpose circuit board designed to simplify the evaluation of the DEI DEIC420 gate drive IC, as well as to provide a building block	Original	EVIC420 DEIC420 EVIC420 EVIC420. DE150 DE-275 DE-375 DE-475 DEIC420 RF MOSFET Gate Driver IC 102N06 DE275-102N06A EVIC420-B RF MOSFET Driver Directed Energy series connection of mosfet	PDF