D20VDC Search Results

IS0122

Abstract: IS0120 PWS740 BU 102S
Contextual Info: • 17 31 3b 5 0D3407b ^ 3 ■ B U R R - BROW N PWS740 Distributed Multi-Channel Isolated DC-TO-DC CONVERTER FEATURES APPLICATIONS • ISOLATED ±7 TO d20VDC OUTPUTS • INDUSTRIAL MEASUREMENT AND CONTROL • BARRIER 100% TESTED AT 1500VAC, 60Hz • DATA ACQUISITION SYSTEMS

IXFN180N20

Contextual Info: BIXYS AdvancedTechnical Information HiPerFET Power MOSFETs Single Die MOSFET IXFN 180N20 v DSS ^D25 P DS on *rr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS Tj =25°Cto150°C 200 V VD0R Tj = 25° C to 150° C; RGS= 1 M ii

Contextual Info: nixY S Advanced Technical Information HiPerFET Power MOSFETs Q-Class IXFH 80N20Q IXFT80N20Q N-Channel Enhancement Mode Avalanche Rated Low Qg, High dv/dt t V ~ ^ uu n s 1° OS Maximum Ratings Symbol Test Conditions V *oss Tj =25°Cto150°C 200 V Tj = 25° C to 150° C; RGS= 1 MQ

IXYS DS 145 12A

Abstract: IXYS DS 145 ld12a
Contextual Info: n ix Y S IXFH15N80Q IXFT15N80Q HiPerFET Power MOSFETs DSS = DS on = ID25 P Q Class 800 V 15 A 0.60 Q trr < 250 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg Preliminary data sheet Symbol Test Conditions V VoCR Tj = 25°Cto 150°C T,J = 25°Cto 150°C; RGS

20n60 to-247

Abstract: 20N60 20N60D 91526E
Contextual Info: ÖIXYS VDSS HiPerFET Power MOSFETs IXFH 15N60 IXFH 20N60 600 V 15 A 600 V 20 A t <250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions VDSS ^ vDGB «9 Maximum Ratings V Tj =25°C to150°C ;R GS= 1 Mi2 600 V Vos Continuous

irfp 250m

Contextual Info: IDIXYS IRFP 360 VDSS MegaMOSraF E T I D25 R DS on 400 V 23 A 0.20 ft N-Channel Enhancement Mode Preliminary data Symbol Test Conditions V Tj = 25°C to 150°C T,J = 25°C to 150°C; RrU b„ = 1.0 M£2 400 400 V V Continuous Transient ±20 ±30 V V Tc = 25°C

1461 smd

Contextual Info: nixYS AdvancedTechnical Information High Voltage MOSFET IXTA 2N80 IXTP 2N80 N-Channel Enhancement Mode Avalanche Energy Rated V* DSS = ^D25 P DS on “ 800 V 2A 5.5 Q — Symbol Test Conditions VDSS Tj =25°Cto150°C 800 V v DGR Tj = 25° C to 150° C; RGS= 1 M£2

ixth12n100

Abstract: 12n100 3055P
Contextual Info: n ix Y S MegaMOS FET IXTH / IXTM 10N100 IXTH / IXTM 12N100 VDSS ^D25 1000 V 1000 V 10 A 12 A p DS on 1.20 Q 1.05 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS T0 =25°Cto150°C 1000 V VDGR Tj = 25° C to 150° C; RGS= 1 Mi2 1000