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Vishay Siliconix SIHP15N60E-GE3 MOSFET N-CH 600V 15A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHP15N60E-GE3	Tube	16,544		1	1 $3.15 10 $3.15 100 $3.15 1000 $1.325 10000 $1.325	Buy Now
Infineon Technologies AG IKD15N60RFATMA1 IGBT TRENCH/FS 600V 30A TO252-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IKD15N60RFATMA1	Digi-Reel	5,444		1	1 $2.68 10 $1.729 100 $2.68 1000 $0.88088 10000 $0.88088	Buy Now
	IKD15N60RFATMA1	Cut Tape	5,444		1	1 $2.68 10 $1.729 100 $2.68 1000 $0.88088 10000 $0.88088	Buy Now
	IKD15N60RFATMA1	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.78475	Buy Now
Newark	IKD15N60RFATMA1	Cut Tape	15,349		1	1 $1.09 10 $1.09 100 $1.09 1000 $1.09 10000 $1.09	Buy Now
Rochester Electronics	IKD15N60RFATMA1		10		1	1 $0.8719 10 $0.8719 100 $0.8196 1000 $0.7411 10000 $0.7411	Buy Now
TME	IKD15N60RFATMA1				1	1 $2.12 10 $1.97 100 $1.89 1000 $1.89 10000 $1.89	Get Quote
Chip One Stop	IKD15N60RFATMA1	Cut Tape	2,490			1 $0.761 10 $0.758 100 $0.753 1000 $0.749 10000 $0.749	Buy Now

EBV Elektronik	IKD15N60RFATMA1			20 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STL15N60M2-EP MOSFET N-CH 600V 7A POWERFLAT HV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STL15N60M2-EP	Digi-Reel	2,645		1	1 $2.69 10 $1.735 100 $2.69 1000 $0.88434 10000 $0.88434	Buy Now
	STL15N60M2-EP	Cut Tape	2,645		1	1 $2.69 10 $1.735 100 $2.69 1000 $0.88434 10000 $0.88434	Buy Now
Avnet Americas	STL15N60M2-EP	Reel		16 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.8073	Buy Now
STMicroelectronics	STL15N60M2-EP				1	1 $2.2 10 $1.5 100 $1.08 1000 $0.88 10000 $0.88	Buy Now
Avnet Silica	STL15N60M2-EP			17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IKB15N60TATMA1 IGBT TRENCH FS 600V 30A TO263-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IKB15N60TATMA1	Digi-Reel	1,559		1	1 $3.02 10 $1.959 100 $3.02 1000 $1.09568 10000 $1.09568	Buy Now
	IKB15N60TATMA1	Cut Tape	1,559		1	1 $3.02 10 $1.959 100 $3.02 1000 $1.09568 10000 $1.09568	Buy Now
	IKB15N60TATMA1	Reel	1,000		1,000	1 - 10 - 100 - 1000 $1.01263 10000 $1.01263	Buy Now
Newark	IKB15N60TATMA1	Cut Tape			1	1 $2.59 10 $1.77 100 $1.27 1000 $1.05 10000 $1.05	Buy Now
TME	IKB15N60TATMA1		832		1	1 $2.8 10 $2.51 100 $2 1000 $2 10000 $2	Buy Now
Chip One Stop	IKB15N60TATMA1	Cut Tape	1,000			1 $2.41 10 $1.56 100 $1.08 1000 $1.02 10000 $1.02	Buy Now
EBV Elektronik	IKB15N60TATMA1			20 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics STFI15N60M2-EP MOSFET N-CH 600V 11A I2PAKFP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STFI15N60M2-EP	Tube	1,496		1	1 $2.99 10 $2.99 100 $2.99 1000 $1.00279 10000 $1.00279	Buy Now

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15N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IXKC 15N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	15N60C5 ISOPLUS220TM E72873	PDF
15N60 Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 15N60 Preliminary Power MOSFET 15A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a	Original	15N60 O-247 15N60 O-220F1 QW-R502-485	PDF
Untitled Abstract: No abstract text available Text: IXKC 15N60C5 Advanced Technical Information ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM	Original	15N60C5 ISOPLUS220TM E72873	PDF
20N60 Abstract: 15N60 K 15N60 20n60 to-247 Text: HiPerFETTM Power MOSFETs IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 15N60 20N60 15 20 A A IDM TC = 25°C, pulse width limited by TJM	Original	15N60 20N60 20N60 O-247 O-204 100ms K 15N60 20n60 to-247	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 15N60 Power MOSFET 15A, 600V N-CHANNEL POWER MOSFET 1  DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a	Original	15N60 15N60 O-247 O-220F1 QW-R502-485	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 15N60 Preliminary Power MOSFET 15 Amps, 600 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 15N60 is an N-channel mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a	Original	15N60 15N60	PDF
20n60 Abstract: 15N60 20N60 datasheet 20n60 G 20n60 to-247 20N6065 K 15N60 15n60 TO-247 IXFM20N60 Text: HiPerFETTM Power MOSFETs IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 15N60 20N60 15 20 A A	Original	15N60 20N60 20n60 15N60 20N60 datasheet 20n60 G 20n60 to-247 20N6065 K 15N60 15n60 TO-247 IXFM20N60	PDF
Untitled Abstract: No abstract text available Text: IXKC 15N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	15N60C5 ISOPLUS220TM E72873 20090209b	PDF
DSA008959 Abstract: 15N60 Text: UNISONIC TECHNOLOGIES CO., LTD 15N60 Preliminary Power MOSFET 15A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a	Original	15N60 O-247 15N60 O-220F1 QW-R502-485 DSA008959	PDF
15N60 Abstract: 20N60 sd 20n60 20n60 G K 15N60 15n60 TO-247 20n60 to-247 20N60NS SD 10 N60 Text: HiPerFETTM Power MOSFETs IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 600 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 15N60 20N60 15 20	Original	15N60 20N60 15N60 20N60 sd 20n60 20n60 G K 15N60 15n60 TO-247 20n60 to-247 20N60NS SD 10 N60	PDF
GS54 Abstract: No abstract text available Text: IXKC 15N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	15N60C5 ISOPLUS220TM E72873 20090209b GS54	PDF
GS54 Abstract: No abstract text available Text: IXKC 15N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	15N60C5 ISOPLUS220TM E72873 GS54	PDF
15N60 Abstract: 15N60C5 E72873 15n60c Text: IXKC 15N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	15N60C5 ISOPLUS220TM E72873 20080523a 15N60 15N60C5 E72873 15n60c	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFH/IXFM 15 N60 IXFH/IXFM 20 N60 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 600 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 15N60 20N60 15 20 A A	Original	15N60 20N60	PDF

15N60CFD Abstract: JESD22 SPP15N60CFD D134 15n60c Text: 15N60CFD CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge 650 V R DS on ,max 0.330 " ID 13.4 A • Ultra low gate charge • Extreme dv /dt rated PG-TO220 • High peak current capability	Original	SPP15N60CFD PG-TO220 15N60CFD 15N60CFD JESD22 SPP15N60CFD D134 15n60c	PDF
15N60CFD Abstract: 15N60 JESD22 SPW15N60CFD D134 Text: 15N60CFD CoolMOSTM Power Transistor Product Summary Features V DS @ Tjmax • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge 650 V R DS on ,max 0.330 Ω ID 13.4 A PG-TO247 • Extreme dv /dt rated	Original	SPW15N60CFD PG-TO247 15N60CFD 009-134-A O-247 PG-TO247-3 15N60CFD 15N60 JESD22 SPW15N60CFD D134	PDF
20N60 Abstract: 15N60 K 15N60 15n60 TO-247 20n60 G Text: VDSS MegaMOSTMFET IXTH/IXTM 15 N60 IXTH/IXTM 20 N60 600 V 600 V ID25 RDS on 15 A 0.50 Ω 20 A 0.35 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous	Original	15N60 20N60 O-204 O-247 O-204 O-247 20N60 15N60 K 15N60 15n60 TO-247 20n60 G	PDF
20N60 Abstract: No abstract text available Text: MegaMOSTMFET IXTH 20N60 IXTM 20N60 VDSS = 600 V ID25 = 20 A RDS on = 0.35 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±20 V VGSM Transient	Original	20N60 15N60 O-247 O-204 O-204 O-247 20N60	PDF
Untitled Abstract: No abstract text available Text: h IXYS v HiPerFET Power MOSFETs " IXFH/15N60 IXFH/IXFM 20 N60 Test Conditions Maximum Ratings V t dss Tj = 25°C to 150°C 600 V V«, Tj = 25°C to 150°C; RQS= 1 Mii 600 V VGS Continuous ±20 V vGSM T ransient ±30 V ^025 Tc = 25°C 15N60 20N60 15	OCR Scan	IXFH/IXFM15N60 15N60 20N60 20N60 O-247 O-204	PDF
IXYS CS 2-12 Abstract: No abstract text available Text: □IXYS IXFH 15N60 IXFH 20N60 HiPerFET Power MOSFETs •TM IXFH/FM 15N60 IXFH/FM 20N60 IXFM 15N60 IXFM 20N60 □ V DSS ^D25 600 V 600 V 15 A 20 A DS on K 0.50 Q. 250 ns 0.35 Q 250 ns N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS Family TO-247 AD	OCR Scan	15N60 20N60 O-247 IXYS CS 2-12	PDF
20n60 to-247 Abstract: 20N60 20N60D 91526E Text: ÖIXYS VDSS HiPerFET Power MOSFETs IXFH 15N60 IXFH 20N60 600 V 15 A 600 V 20 A t <250 ns N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Symbol Test Conditions VDSS ^ vDGB «9 Maximum Ratings V Tj =25°C to150°C ;R GS= 1 Mi2 600 V Vos Continuous	OCR Scan	15N60 20N60 Cto150 20N60 O-247 20n60 to-247 20N60D 91526E	PDF
15N60 Abstract: K 15N60 Text: Tfl SAMSUNG SEMICO NDUCT OR INC ^ r E SSM15N55/15N60 SSH15N55/15N60 OODSaiD T- Ä ^ 4 NNELm i POWER MOSFETS - e iÄ ” Preliminary Specifications PRODUCT SUMMARY 600 Volt, 0.5 Ohm SFET Part Number Vos RDS on SSM15N55 550V 0.5Q 15A 15N60	OCR Scan	SSM15N55/15N60 SSH15N55/15N60 SSM15N55 SSM15N60 SSH15N55 SSH15N60 15N60 K 15N60	PDF
15N60 Abstract: IXTM15N60 Text: I X Y S IDE CORP D I 4bflb22b D00034Ö /S' □IX Y S MegaMOS'" FETs 15N60, 55 15N60, 55 M A X IM U M R ATIN G S Sym. IXTH15N55 IXTM15N55 15N60 15N60 U nit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (R q s = 1.0MÜ) (1) Vd g r	OCR Scan	4bflb22b D00034Ö IXTH15N60, IXTM15N60, IXTH15N55 IXTM15N55 IXTH15N60 IXTM15N60 50-600V, O-247 15N60	PDF
mosfet 4400 Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,	OCR Scan	100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS	PDF

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15N60 Price and Stock

Vishay Siliconix SIHP15N60E-GE3

Infineon Technologies AG IKD15N60RFATMA1

STMicroelectronics STL15N60M2-EP

Infineon Technologies AG IKB15N60TATMA1

STMicroelectronics STFI15N60M2-EP

15N60 Datasheets Context Search

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15N60

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20N60

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20n60

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DSA008959

15N60

GS54

GS54

15N60

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15N60CFD

15N60CFD

20N60

20N60

Untitled

IXYS CS 2-12

20n60 to-247

15N60

15N60

mosfet 4400